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1. 发明申请

US20090127462A1 nBn AND pBp INFRARED DETECTORS WITH GRADED BARRIER LAYER, GRADED ABSORPTION LAYER, OR CHIRPED STRAINED LAYER SUPER LATTICE ABSORPTION LAYER 有权
标题翻译： nBn和pBp红外线检测器，带有梯级屏障层，分级吸收层或带有应变层的超级吸收层
公开(公告)号：US20090127462A1
公开(公告)日：2009-05-21
申请号：US12249749
申请日：2008-10-10
申请人： Sarath D. Gunapala , David Z. Ting , Cory J. Hill , Sumith V. Bandara
发明人： Sarath D. Gunapala , David Z. Ting , Cory J. Hill , Sumith V. Bandara
IPC分类号： H01L27/14 , G01T1/24
CPC分类号： H01L31/109 , B82Y20/00 , H01L31/0304 , H01L31/035236
摘要： An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.
摘要翻译：描述了nBn检测器，其中对于一些实施例，阻挡层具有浓度梯度，对于一些实施例，吸收层具有浓度梯度，并且对于一些实施例，吸收层是啁啾应变层超晶格。使用渐变屏障或吸收层，或者使用啁啾应变层超晶格作为吸收层，允许设计能带，使价带可以跨设备对准。描述和要求保护其他实施例。

2. 发明授权

US06674091B2 Multi-quantum-well detector for low-background applications 失效
标题翻译：用于低背景应用的多量子阱探测器
公开(公告)号：US06674091B2
公开(公告)日：2004-01-06
申请号：US09967842
申请日：2001-09-26
申请人： Sarath D. Gunapala , Sumith V. Bandara , John K. Liu , Sir B. Rafol , David Z. Ting , Jason M. Mumolo
发明人： Sarath D. Gunapala , Sumith V. Bandara , John K. Liu , Sir B. Rafol , David Z. Ting , Jason M. Mumolo
IPC分类号： H01L27146
CPC分类号： B82Y20/00 , H01L31/035236 , Y10S977/759
摘要： Device designs and techniques for reducing the dark current in quantum-well detectors.
摘要翻译：用于减少量子阱探测器中的暗电流的器件设计和技术。

3. 发明申请

US20120145996A1 BARRIER INFRARED DETECTOR 有权
标题翻译：障碍红外探测器
公开(公告)号：US20120145996A1
公开(公告)日：2012-06-14
申请号：US13197588
申请日：2011-08-03
申请人： David Z. Ting , Arezou Khoshakhlagh , Alexander Soibel , Cory J. Hill , Sarath D. Gunapala
发明人： David Z. Ting , Arezou Khoshakhlagh , Alexander Soibel , Cory J. Hill , Sarath D. Gunapala
IPC分类号： H01L31/0352 , H01L29/06
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/101 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.
摘要翻译：本文提供了一种基于超晶格的红外线吸收器和匹配的电子阻挡和空穴阻挡单极屏障，具有梯度带隙的吸收器和屏障，高性能红外探测器及其制造方法。红外线吸收剂材料由超晶格（周期性结构）制成，其中每个周期由两层或更多层InAs，InSb，InSbAs或InGaAs组成。选择层宽度和合金组成以产生用于特定应用的所需能带隙，吸收强度和应变平衡。此外，超晶格的周期性可以“啁啾”（变化）以产生具有分级或变化的能带隙的材料。本文描述和演示的基于超晶格的屏障红外探测器具有覆盖整个3-5微米大气透射窗的光谱范围，优异的暗电流特性至少运行150K，产量高，具有高可操作性，高均匀度焦平面阵列

4. 发明申请

US20100072514A1 HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABLE CUTOFF WAVELENGTH 有权
标题翻译：高操作温度条形红外探测器，具有可裁剪的切割波长
公开(公告)号：US20100072514A1
公开(公告)日：2010-03-25
申请号：US12567635
申请日：2009-09-25
申请人： David Z. Ting , Cory J. Hill , Alexander Soibel , Sumith V. Bandara , Sarath D. Gunapala
发明人： David Z. Ting , Cory J. Hill , Alexander Soibel , Sumith V. Bandara , Sarath D. Gunapala
IPC分类号： H01L31/0336 , H01L21/20
CPC分类号： H01L31/03046 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L31/0304 , H01L31/0352 , H01L31/101 , H01L31/109 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.
摘要翻译：描述了具有可选截止波长的吸收材料的阻挡红外探测器及其制造方法。可以通过以吸收剂混合比混合GaSb和InAsSb而形成的GaSb衬底层上生长GaInAsSb吸收层。然后可以在通过阻挡混合比混合GaSb和AlSbAs形成的阻挡层上生长GaAlAsSb阻挡层。可以选择吸收剂混合比以调节吸收层的带隙，从而确定屏障红外检测器的截止波长。吸收剂混合比可以沿吸收层生长方向变化。可以使用各种接触层结构。此外，顶部接触层可被隔离成电隔离的元件阵列，作为可用于检测器阵列，成像阵列或焦平面阵列中的各种功能检测器。

5. 发明授权

US08928036B2 High operating temperature barrier infrared detector with tailorable cutoff wavelength 有权
标题翻译：高工作温度屏障红外探测器，具有可裁剪的截止波长
公开(公告)号：US08928036B2
公开(公告)日：2015-01-06
申请号：US12567635
申请日：2009-09-25
申请人： David Z. Ting , Cory J. Hill , Alexander Seibel , Sumith Y. Bandara , Sarath D. Gunapala
发明人： David Z. Ting , Cory J. Hill , Alexander Seibel , Sumith Y. Bandara , Sarath D. Gunapala
IPC分类号： H01L31/0336 , H01L31/0304 , H01L31/0352 , H01L31/109 , H01L31/18 , H01L21/02
CPC分类号： H01L31/03046 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L31/0304 , H01L31/0352 , H01L31/101 , H01L31/109 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.
摘要翻译：描述了具有可选截止波长的吸收材料的阻挡红外探测器及其制造方法。可以通过以吸收剂混合比混合GaSb和InAsSb形成的GaSb衬底层上生长GaInAsSb吸收层。然后可以在通过阻挡混合比混合GaSb和AlSbAs形成的阻挡层上生长GaAlAsSb阻挡层。可以选择吸收剂混合比以调节吸收层的带隙，从而确定屏障红外检测器的截止波长。吸收剂混合比可以沿吸收层生长方向变化。可以使用各种接触层结构。此外，顶部接触层可被隔离成电隔离的元件阵列，作为可用于检测器阵列，成像阵列或焦平面阵列中的各种功能检测器。

6. 发明申请

US20100155777A1 DIGITAL ALLOY ABSORBER FOR PHOTODETECTORS 有权
标题翻译：数字合金吸收剂用于光电转换器
公开(公告)号：US20100155777A1
公开(公告)日：2010-06-24
申请号：US12639913
申请日：2009-12-16
申请人： Cory J. Hill , David Z. Ting , Sarath D. Gunapala
发明人： Cory J. Hill , David Z. Ting , Sarath D. Gunapala
IPC分类号： H01L31/0304
CPC分类号： H01L31/03046 , H01L31/101 , Y02E10/544
摘要： In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.
摘要翻译：为了增加光谱响应范围并提高光生载流子（例如在nBn光电检测器中）的迁移率，可以通过将一个（或其部分）嵌入到半导体材料的几个单层（插入物）中来使用数字合金吸收器层）周期性地进入吸收层的不同的主体半导体材料。插入层和主体半导体材料的半导体材料可以具有基本上不匹配的晶格常数。例如，这可以通过将InSb的单层周期性地嵌入到InAsSb主体中作为吸收区域来实现，以扩展InAsSb光电检测器的截止波长，例如基于InAsSb的nBn器件。所述技术允许同时控制合金组成和净应变，这两者都是光电检测器操作的关键参数。

7. 发明授权

US09466741B2 Digital alloy absorber for photodetectors 有权
标题翻译：用于光电探测器的数字合金吸收体
公开(公告)号：US09466741B2
公开(公告)日：2016-10-11
申请号：US12639913
申请日：2009-12-16
申请人： Cory J. Hill , David Z. Ting , Sarath D. Gunapala
发明人： Cory J. Hill , David Z. Ting , Sarath D. Gunapala
IPC分类号： H01L31/0304 , H01L31/101
CPC分类号： H01L31/03046 , H01L31/101 , Y02E10/544
摘要： In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.
摘要翻译：为了增加光谱响应范围并提高光生载流子（例如在nBn光电检测器中）的迁移率，可以通过将一个（或其部分）嵌入到半导体材料的几个单层（插入物）中来使用数字合金吸收器层）周期性地进入吸收层的不同的主体半导体材料。插入层和主体半导体材料的半导体材料可以具有基本上不匹配的晶格常数。例如，这可以通过将InSb的单层周期性地嵌入到InAsSb主体中作为吸收区域来实现，以扩展InAsSb光电检测器的截止波长，例如基于InAsSb的nBn器件。所述技术允许同时控制合金组成和净应变，这两者都是光电检测器操作的关键参数。

8. 发明授权

US08368051B2 Complementary barrier infrared detector (CBIRD) 有权
标题翻译：互补屏障红外探测器（CBIRD）
公开(公告)号：US08368051B2
公开(公告)日：2013-02-05
申请号：US12501167
申请日：2009-07-10
申请人： David Z. Ting , Sumith V. Bandara , Cory J. Hill , Sarath D. Gunapala
发明人： David Z. Ting , Sumith V. Bandara , Cory J. Hill , Sarath D. Gunapala
IPC分类号： H01L31/00
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/101
摘要： An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.
摘要翻译：具有与吸收体区域的一侧相邻的空穴阻挡区域，与吸收体区域的另一侧相邻的电子势垒区域和与电子势垒相邻的半导体的红外线检测器。

9. 发明授权

US08217480B2 Barrier infrared detector 有权
标题翻译：屏障红外探测器
公开(公告)号：US08217480B2
公开(公告)日：2012-07-10
申请号：US13197588
申请日：2011-08-03
申请人： David Z. Ting , Arezou Khoshakhlagh , Alexander Soibel , Cory J. Hill , Sarath D. Gunapala
发明人： David Z. Ting , Arezou Khoshakhlagh , Alexander Soibel , Cory J. Hill , Sarath D. Gunapala
IPC分类号： H01L27/14
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/101 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.
摘要翻译：本文提供了一种基于超晶格的红外线吸收器和匹配的电子阻挡和空穴阻挡单极屏障，具有梯度带隙的吸收器和屏障，高性能红外探测器及其制造方法。红外线吸收剂材料由超晶格（周期性结构）制成，其中每个周期由两层或更多层InAs，InSb，InSbAs或InGaAs组成。选择层宽度和合金组成以产生用于特定应用的所需能带隙，吸收强度和应变平衡。此外，超晶格的周期性可以“啁啾”（变化）以产生具有分级或变化的能带隙的材料。本文描述和演示的基于超晶格的屏障红外探测器具有覆盖整个3-5微米大气透射窗的光谱范围，优异的暗电流特性至少运行150K，产量高，具有高可操作性，高均匀度焦平面阵列

10. 发明授权

US07599061B1 Ultra compact spectrometer apparatus and method using photonic crystals 失效
标题翻译：超小型光子仪器和使用光子晶体的方法
公开(公告)号：US07599061B1
公开(公告)日：2009-10-06
申请号：US11188226
申请日：2005-07-21
申请人： David Z. Ting , Cory J. Hill , Sumith V. Bandara , Sarath D. Gunapala
发明人： David Z. Ting , Cory J. Hill , Sumith V. Bandara , Sarath D. Gunapala
IPC分类号： G01J3/28
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/4215
摘要： The present invention is directed to methods of photonic crystal formation, and to methods and apparatus for using such photonic crystals, particularly in conjunction with detector arrays. Photonic crystal parameters and detector array parameters are compared to optimize the selection and orientation of a photonic crystal shape. A photonic crystal is operatively positioned relative to a plurality of light sensors. The light sensors can be separated by a pitch distance and positioned within one half of the pitch distance of an exit surface of the photonic crystals.
摘要翻译：本发明涉及光子晶体形成的方法，以及特别是结合检测器阵列使用这种光子晶体的方法和装置。比较光子晶体参数和检测器阵列参数，优化光子晶体形状的选择和取向。光子晶体相对于多个光传感器可操作地定位。光传感器可以被间距距离分开并且位于光子晶体的出射表面的间距距离的一半内。

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