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71. 发明授权

US07449957B2 Radio frequency power amplifier 失效
标题翻译：射频功率放大器
公开(公告)号：US07449957B2
公开(公告)日：2008-11-11
申请号：US11435891
申请日：2006-05-18
申请人： Shingo Enomoto , Masahiko Inamori , Haruhiko Koizumi , Kazuki Tateoka , Hirokazu Makihara , Shingo Matuda , Katuhiko Kawashima
发明人： Shingo Enomoto , Masahiko Inamori , Haruhiko Koizumi , Kazuki Tateoka , Hirokazu Makihara , Shingo Matuda , Katuhiko Kawashima
IPC分类号： H03F3/68 , H03F3/191
CPC分类号： H03F1/30 , H03F3/189 , H03F3/20 , H03F2203/21178
摘要： A radio frequency signal RF is input to a base of each of transistors TR1 through TRn via a corresponding capacitor among capacitors C1 through Cn, is amplified, and is output from a collector of each of the transistors TR1 through TRn. An emitter of each of the transistors TR1 through TRn is grounded. A bias voltage DC given from a bias circuit Bias is supplied to the base of each of the transistors TR1 through TRn via a corresponding resistor among resistors Ra1 through Ran. A signal line for the bias voltage DC is connected to an input line for the radio frequency signal RF via the bridge resistor R in a direct current manner.
摘要翻译：射频信号RF通过电容器C 1至C n中的相应电容器被输入到晶体管TR1至TRn中的每一个的基极，被放大，并从晶体管TR1至TRn中的每一个的集电极输出。每个晶体管TR 1至TR n的发射极接地。从偏置电路偏置电压给出的偏置电压DC通过电阻器Ra 1至Ran中的相应电阻器提供给每个晶体管TR1至TRn的基极。用于偏置电压DC的信号线通过桥式电阻器R以直流方式连接到用于射频信号RF的输入线。

72. 发明授权

US07444124B1 Adjustable segmented power amplifier 有权
标题翻译：可调分段功率放大器
公开(公告)号：US07444124B1
公开(公告)日：2008-10-28
申请号：US10776476
申请日：2004-02-10
申请人： Wayne Loeb , King Chun Tsai
发明人： Wayne Loeb , King Chun Tsai
IPC分类号： H03G3/10 , H04B1/04
CPC分类号： H03G1/0088 , H03F1/0261 , H03F1/0277 , H03F3/211 , H03F3/245 , H03F3/45085 , H03F3/602 , H03F2200/09 , H03F2200/18 , H03F2200/423 , H03F2200/451 , H03F2200/541 , H03F2203/21139 , H03F2203/21178 , H03F2203/45731 , H04B1/0483
摘要： An architecture, circuits, systems and a method for amplifying an analog signal. The architecture and/or circuit generally includes a first fixed stage (e.g., a predriver) and an adjustable stage. The first fixed stage may be configured to amplify an analog signal and provide a first amplified analog output at a first common node. The adjustable stage may comprise a plurality of independently selectable parallel amplifier segments. Each of the parallel segments may have an input at the first common node and an output at a second common node, a transistor having a control terminal, and a first inductor in electrical communication with the control terminal of the transistor. The adjustable stage may be configured to apply a bias to the control terminal of the transistor in a selected segment and to provide an output signal in one of a plurality of a power ranges corresponding to a number of selected parallel amplifier segments. The output signal generally has a minimum power efficiency when two or more of the parallel segments are selected. The present invention advantageously provides a relatively compact power amplifier with an extended output power range at which the amplifier is highly efficient. In preferred embodiments, the input and output matching characteristics are generally independent of the number of selected output amplifier segments.
摘要翻译：一种用于放大模拟信号的架构，电路，系统和方法。架构和/或电路通常包括第一固定级（例如，预驱动器）和可调节级。第一固定级可以被配置为放大模拟信号并且在第一公共节点处提供第一放大的模拟输出。可调节级可以包括多个可独立选择的并联放大器段。每个并行段可以具有在第一公共节点处的输入和在第二公共节点处的输出，具有控制端子的晶体管，以及与晶体管的控制端子电连通的第一电感器。可调节级可以被配置为将偏置施加到所选择的段中的晶体管的控制端，并且提供与多个选择的并联放大器段对应的多个功率范围中的一个功率范围中的输出信号。当选择两个或多个并联段时，输出信号通常具有最小功率效率。本发明有利地提供了具有扩展输出功率范围的相对紧凑的功率放大器，在该功率范围内放大器是高效率的。在优选实施例中，输入和输出匹配特性通常与选择的输出放大器段的数量无关。

73. 发明授权

US07429894B2 Power device having connection structure compensating for reactance component of transmission line 失效
标题翻译：具有补偿传输线电抗分量的连接结构的功率器件
公开(公告)号：US07429894B2
公开(公告)日：2008-09-30
申请号：US11519668
申请日：2006-09-12
申请人： Woo Jin Chang , Jae Kyoung Mun , Haecheon Kim , Jong Won Lim , Hong Gu Ji , Ho Kyun Ahn
发明人： Woo Jin Chang , Jae Kyoung Mun , Haecheon Kim , Jong Won Lim , Hong Gu Ji , Ho Kyun Ahn
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F3/211 , H03F2200/366 , H03F2200/447 , H03F2200/543 , H03F2203/21178
摘要： Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.
摘要翻译：提供了具有补偿电抗分量的连接结构的功率器件，其中配置并连接晶体管，以通过补偿导致由于用于连接多个元件的传输线引起的相位差的电抗分量来最小化由热引起的晶体管性质的劣化的晶体管并联，使得用于高频功率放大器的功率器件输出高功率，并将由高输出功率产生的热量传输到散热器。

74. 发明申请

US20080094141A1 HIGH-FREQUENCY POWER AMPLIFIER 有权
标题翻译：高频功率放大器
公开(公告)号：US20080094141A1
公开(公告)日：2008-04-24
申请号：US11682366
申请日：2007-03-06
申请人： Seiki GOTOU , Akira INOUE , Tetsuo KUNII , Toshikazu OUE
发明人： Seiki GOTOU , Akira INOUE , Tetsuo KUNII , Toshikazu OUE
IPC分类号： H03F3/68 , H03F3/191
CPC分类号： H03F3/604 , H03F3/211 , H03F2200/451 , H03F2203/21103 , H03F2203/21139 , H03F2203/21178
摘要： A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.
摘要翻译：高频功率放大器具有FET单元，其具有多频形式的单位FET，并且具有输入信号的栅极焊盘，接地的源极焊盘和输出信号的漏极焊盘。高频处理电路包括分流连接在单元FET的栅极焊盘和接地端之间的串联谐振电路。串联谐振电路中的两个具有对应于包括在FET元件的工作频带中的频率的第二和高次谐波的各自不同的谐振频率。

75. 发明授权

US07345537B2 Linear power amplifier with multiple output power levels 有权
标题翻译：具有多个输出功率电平的线性功率放大器
公开(公告)号：US07345537B2
公开(公告)日：2008-03-18
申请号：US10666552
申请日：2003-09-19
申请人： Thomas R. Apel , Tarun Juneja
发明人： Thomas R. Apel , Tarun Juneja
IPC分类号： H03G9/00 , H03G5/16
CPC分类号： H03F1/0261 , H03F1/0244 , H03F1/0277 , H03F1/302 , H03F2203/21178 , H03F2203/7206 , H03F2203/7236
摘要： A power amplifier stage has a first amplifier subsection and a second amplifier subsection coupled in a parallel configuration. The first amplifier subsection receives a signal to be amplified and the second amplifier subsection receives the signal to be amplified via a first delay line. The amplified output signal of the first amplifier subsection is passed through a second impedance inverter and is combined with the amplified output signal from the second amplifier subsection. In a low power mode, the first amplifier subsection operates as a linear amplifier and the second subsection is biased off. In a high power mode, both the first and second amplifier subsections operate as linear amplifiers. Selecting the impedances of the second delay element and the first amplifier to be equal is essential for high power mode operation and greatly improves the amplifier efficiency in the low power mode.
摘要翻译：功率放大器级具有以并联结构耦合的第一放大器子部分和第二放大器部分。第一放大器部分接收要被放大的信号，并且第二放大器部分经由第一延迟线接收待放大的信号。第一放大器子部分的放大的输出信号通过第二阻抗反相器并与来自第二放大器子部分的放大的输出信号组合。在低功率模式下，第一放大器部分作为线性放大器工作，第二部分被偏置掉。在高功率模式下，第一和第二放大器子部分都作为线性放大器工作。选择第二延迟元件和第一放大器相等的阻抗对于高功率模式操作是必需的，并且极大地提高了低功率模式下的放大器效率。

76. 发明申请

US20070290737A1 Reconfigurable frequency filter 失效
标题翻译：可重构频率滤波器
公开(公告)号：US20070290737A1
公开(公告)日：2007-12-20
申请号：US11492983
申请日：2006-07-26
申请人： Qiang Li
发明人： Qiang Li
IPC分类号： H03K17/00
CPC分类号： H03F3/72 , H03F3/211 , H03F2200/111 , H03F2203/21178 , H03F2203/7209 , H03F2203/7236 , H03H11/04 , H03H11/24
摘要： There are various mobile communication standards such as GSM, EDGE, and W-CDMA. For a GSM or EDGE system, a receiver must be configured to work with an IF signal with a center frequency and bandwidth of 200 KHz. For WCDMA system, the same receiver must be configured to work with an IF signal with a center frequency of 600 KHz to 1000 KHz and band width of 2000 KHz. Accordingly, a configurable frequency IF filter with the capability to operate with multiple standards is provided.
摘要翻译：有各种移动通信标准，如GSM，EDGE和W-CDMA。对于GSM或EDGE系统，接收机必须配置为使用中频和200 KHz带宽的IF信号。对于WCDMA系统，同一接收机必须配置为使用中频为600KHz至1000KHz，带宽为2000KHz的IF信号。因此，提供了具有多个标准操作能力的可配置频率IF滤波器。

77. 发明申请

US20070164316A1 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same 有权
公开(公告)号：US20070164316A1
公开(公告)日：2007-07-19
申请号：US11723769
申请日：2007-03-22
申请人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
发明人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
IPC分类号： H01L31/00
CPC分类号： H01L29/7304 , H01L27/0605 , H01L29/7371 , H03F2200/444 , H03F2203/21178
摘要： A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.

78. 发明授权

US07098740B2 Radio frequency power amplifier and communication system 失效
标题翻译：射频功率放大器和通信系统
公开(公告)号：US07098740B2
公开(公告)日：2006-08-29
申请号：US10688976
申请日：2003-10-21
申请人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
发明人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
IPC分类号： H03F3/68
CPC分类号： H03F3/211 , H03F1/302 , H03F2200/372 , H03F2203/21178
摘要： There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1 through QN (SiGe HBT) with bias resistors R11 through R1N having resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LB is provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDC flowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
摘要翻译：不仅提供使用SiGe HBT的射频功率放大器，而且具有很小的放大失真，而且还提供了使用它的通信系统。传统的射频功率放大器提供具有偏置电阻器R11至R11的晶体管Q 1至Q N（SiGe HBT）的基极偏置路径， SUB> 1N 的电阻值是连接到每个晶体管基极的镇流电阻的三到五倍。作为用于补偿流过偏置电阻器的直流分量I DC的电压降的装置，设置有与偏压电阻并联的线圈L B B。增加偏置电阻抑制输出电流中低频变化的非线性。线圈的添加补偿电压降。因此，可以提高最大线性输出功率。结果，可以在宽的输出范围内提供具有小的放大失真的功率放大器。

79. 发明申请

US20040113699A1 Radio frequency power amplifier and communication system 失效
标题翻译：射频功率放大器和通信系统
公开(公告)号：US20040113699A1
公开(公告)日：2004-06-17
申请号：US10688976
申请日：2003-10-21
申请人： Renesas Technology Corp.
发明人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
IPC分类号： H03F003/68
CPC分类号： H03F3/211 , H03F1/302 , H03F2200/372 , H03F2203/21178
摘要： There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1 through QN (SiGe HBT) with bias resistors R11 through R1N having resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LB is provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDC flowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
摘要翻译：不仅提供使用SiGe HBT的射频功率放大器，而且具有很小的放大失真，而且还提供了使用它的通信系统。传统的射频功率放大器提供具有偏置电阻器R11至R1N的晶体管Q1至QN（SiGe HBT）的基极偏置路径，该偏置电阻器的电阻值为连接到每个晶体管基极的镇流电阻器的电阻值的三到五倍。线圈LB与偏置电阻并联提供，作为用于补偿由直流成分IDC流过偏置电阻器的电压降的装置。增加偏置电阻抑制输出电流中低频变化的非线性。线圈的添加补偿电压降。因此，可以提高最大线性输出功率。结果，可以在宽的输出范围内提供具有小的放大失真的功率放大器。

80. 发明申请

US20030218185A1 Semiconductor device, manufacturing thereof and power amplifier module 失效
标题翻译：半导体器件，其制造和功率放大器模块
公开(公告)号：US20030218185A1
公开(公告)日：2003-11-27
申请号：US10409455
申请日：2003-04-09
申请人： Hitachi, Ltd.
发明人： Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
IPC分类号： H01L031/0328 , H01L031/072 , H01L021/331 , H01L021/8222
CPC分类号： H01L29/66318 , H01L29/0692 , H01L29/42304 , H01L29/7371 , H01L2924/15153 , H01L2924/1517 , H01L2924/16152 , H03F1/302 , H03F3/19 , H03F2203/21178
摘要： A first aspect of the invention is to realize a power amplifier having high power adding efficiency and high power gain at low cost. For that purpose, in a semiconductor device using an emitter top heterojunction bipolar transistor formed above a semiconductor substrate and having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. In this way, as a result of enabling to reduce base/collector junction capacitance per unit emitter area without using a collector top structure having complicated fabricating steps, a semiconductor device having high power adding efficiency and high-power gain and suitable for a power amplifier can be realized. A second aspect of the application is to provide a power amplifier enabling to reduce temperature dependency of power gain. For that purpose, in a multistage power amplifier including a first amplifier circuit 2 having one or more of bipolar transistors connected in parallel and arranged above a first semiconductor substrate and a second amplifier circuit 3 having one or more of bipolar transistors connected in parallel and arranged above a second semiconductor substrate, the bipolar transistor used in the first amplifier circuit 2 is provided with an emitter shape having a planar shape in a rectangular shape and the bipolar transistor used in the second amplifier circuit 3 is provided with an emitter shape in, for example, a ring-like shape and a base electrode thereof is present only on the inner side of the ring-like emitter.
摘要翻译：本发明的第一方面是以低成本实现具有高功率增加效率和高功率增益的功率放大器。为此，在半导体衬底上形成的具有平面形状为环状形状的发射极顶部异质结双极晶体管的半导体器件中，提供了仅在基板的内侧存在基极的结构环状发射极 - 基极结区域。以这种方式，由于能够在不使用具有复杂的制造步骤的集电极顶部结构的情况下，能够减小每单位发射极面积的基极/集电极结电容，所以具有高功率增加效率和高功率增益并适用于功率放大器的半导体器件可以实现。该应用的第二方面是提供能够降低功率增益的温度依赖性的功率放大器。为此，在包括具有并联并且布置在第一半导体衬底之上的一个或多个双极晶体管的第一放大器电路2的多级功率放大器和具有一个或多个双极晶体管并联连接并布置的第二放大器电路3 在第二半导体衬底之上，在第一放大器电路2中使用的双极晶体管具有矩形形状的平面形状的发射极形状，并且在第二放大器电路3中使用的双极晶体管具有发射极形状，用于例如，环状形状及其基极只存在于环状发射体的内侧。

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