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71. 发明授权

US07218658B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07218658B2
公开(公告)日：2007-05-15
申请号：US10918358
申请日：2004-08-16
申请人： Kazuhisa Takagi
发明人： Kazuhisa Takagi
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/2206 , H01S5/2214 , H01S5/2222 , H01S5/2231 , H01S5/227 , H01S5/305 , H01S5/321 , H01S5/3211 , H01S5/3213 , H01S5/34313 , H01S5/34353 , H01S5/34366 , H01S5/34373
摘要： A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.
摘要翻译：根据本发明的半导体激光器件包括：光波导层叠结构，具有：由p-InP层构成的第一第一包层; p-AlGaInAs的双异质结层; 由p-InP层构成的第二第一包层; p-InGaAsP的第一光限制层; 具有量子阱结构的InGaAsP的有源层; n-InGaAsP的第二光限制层; 以及由n-InP层构成的第二包覆层，并且在第一第一包层和双异质结层之间的界面处以及在双异质结层和第二第一包层之间的界面处形成第二类型的异质结层。

72. 发明授权

US07206329B2 Driving system for a semiconductor laser device 失效
标题翻译：半导体激光器驱动系统
公开(公告)号：US07206329B2
公开(公告)日：2007-04-17
申请号：US10871280
申请日：2004-06-21
申请人： Shinichi Nakatsuka , Jyunshin Sakamoto , Hiroshi Inenaga , Susumu Saito
发明人： Shinichi Nakatsuka , Jyunshin Sakamoto , Hiroshi Inenaga , Susumu Saito
IPC分类号： H01S3/00
CPC分类号： B82Y20/00 , G06K15/1209 , H01S5/042 , H01S5/06808 , H01S5/2206 , H01S5/2231 , H01S5/305 , H01S5/3095 , H01S5/34326 , H01S5/34333 , H01S5/34353 , H01S5/3436 , H01S5/4031
摘要： When a semiconductor laser is energized, a virtual junction temperature rises to reduce a threshold current, which fluctuates a light output by the unit of a several microseconds, thereby causing printing irregularity. An object of the invention is to prevent the fluctuation in light output occurring due to the temperature change caused by the energization of the semiconductor laser with a simple circuit structure and under the driving condition of a small bias current. A constant voltage driving is performed with a circuit or device having negative resistance characteristics being arranged in series with the semiconductor laser. Thus, the reduction in light output of the semiconductor laser due to the temperature rise is compensated for by an increase in driving current thanks to a reduction in rising voltage of current/voltage characteristics.
摘要翻译：当半导体激光器通电时，虚拟结温度上升以减小阈值电流，其使光输出以几微秒为单位波动，从而导致印刷不规则。本发明的目的是为了防止由于由简单的电路结构的半导体激光器的激励引起的温度变化和在小的偏置电流的驱动条件下产生的光输出的波动。使用具有负电阻特性的电路或器件与半导体激光器串联布置来执行恒定电压驱动。因此，由于电流/电压特性的上升电压的降低，由于温度升高导致的半导体激光器的光输出的减少被驱动电流的增加所补偿。

73. 发明申请

US20070069221A1 Semiconductor laser diode and method of fabricating the same 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20070069221A1
公开(公告)日：2007-03-29
申请号：US11525088
申请日：2006-09-22
申请人： Ryoji Hiroyama , Teruaki Miyake , Yuzuru Miyata
发明人： Ryoji Hiroyama , Teruaki Miyake , Yuzuru Miyata
IPC分类号： H01L33/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/2009 , H01S5/2206 , H01S5/2231 , H01S5/3063 , H01S5/3211 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.
摘要翻译：可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。

74. 发明申请

US20070012929A1 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20070012929A1
公开(公告)日：2007-01-18
申请号：US11520583
申请日：2006-09-14
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01L33/00 , H01L31/12 , H01L29/24 , H01L27/15 , H01L29/26
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

75. 发明申请

US20060166386A1 Optical semiconductor device and its manufacturing method 审中-公开
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20060166386A1
公开(公告)日：2006-07-27
申请号：US10547404
申请日：2005-01-13
申请人： Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
发明人： Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
IPC分类号： H01L21/00 , H01L33/00 , H01L29/18
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/0045 , H01L33/24 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2201 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/227 , H01S5/2275 , H01S5/305 , H01S5/3213 , H01S5/3434 , H01S5/34373 , H01S2301/18 , H01S2304/04
摘要： An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under the active layer (7), a p-type second cladding layer (8) made of InP which is formed under the active layer (7), and window regions (4a, 4b) which are formed at least one light-emitting facet of both light-emitting facets of the active layer (7). The window regions are formed between device facets (1a, 1b) from the light-emitting facet. A relationship is established in which, given that a refractive index of the n-type first cladding layer (6) is na, and a refractive index of the p-type second cladding layer (8) is nb, na>nb is obtained that the refractive index na of the n-type first cladding layer (6) is higher than the refractive index nb of the p-type second cladding layer (8), so as to deflect a distribution of electric field strength of a light generated at the active layer (7) toward the n-type first cladding layer (6) side.
摘要翻译：光学半导体器件（1）具有由InP制成的半导体衬底（2），与半导体衬底（2）上方的半导体衬底（2）的上表面（2a）平行形成的有源层（7）），形成在有源层（7）下面的由InGaAsP构成的n型第一包层（6），形成在有源层（7）下方的由InP构成的p型第二包层（8）和形成有源层（7）的两个发光面的至少一个发光面的窗口区域（4a，4b）。窗口区域形成在来自发光小面的器件面（1a，1b）之间。考虑到n型第一包层（6）的折射率为na，p型第二包覆层（8）的折射率为nb，则得到NA> nb， n型第一包层（6）的折射率na高于p型第二包覆层（8）的折射率nb，从而偏转在p型第二包层（8）中产生的光的电场强度分布有源层（7）朝向n型第一包层（6）侧。

76. 发明申请

US20060065886A1 Semiconductor apparatus for white light generation and amplification 有权
标题翻译：用于白光发生和放大的半导体装置
公开(公告)号：US20060065886A1
公开(公告)日：2006-03-30
申请号：US10948215
申请日：2004-09-24
申请人： Jin-Wei Shi , Jinn-Kong Sheu
发明人： Jin-Wei Shi , Jinn-Kong Sheu
IPC分类号： H01L29/06
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0424 , H01S5/2206 , H01S5/3095 , H01S5/34333
摘要： The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.
摘要翻译：本发明是一种用于白光发生和放大的半导体装置，其中在不同的电流偏压下，通过折叠多波长量子阱并通过侧注射电流可以稳定和均匀地产生白光。而且，白光可以以电子方式激发而不与荧光粉混合，从而降低了密封成本。由于光被电力直接激发以防止在荧光变换期间的能量损失，所以本发明的发光效率远远大于与白光发光二极管混合的传统磷的发光效率。此外，关于白光的特性，白光的光谱可以通过调整量子阱的结构和/或数量同时防止受到荧光粉的原子发射线的限制而实现。

77. 发明授权

US06999488B2 Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor 失效
标题翻译：能够防止阈值电流和工作电流的半导体激光装置的增加和制造方法
公开(公告)号：US06999488B2
公开(公告)日：2006-02-14
申请号：US10602827
申请日：2003-06-25
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2201 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S2301/173 , H01S2304/02
摘要： A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.
摘要翻译：在蚀刻停止层7上形成由p型第二AlGaInP包覆层8，p型GaInP夹层9和p型GaAs覆盖层10构成的脊部。通过使p型中间层9在宽度方向上突出超过p型第二覆盖层8，在p型中间层9和p型第二覆盖层8之间形成不小于0.13μm的台阶。通过该步骤，AlInP层可以在脊部两侧和脊部两侧彼此分开形成。因此，当通过蚀刻去除脊部上的AlInP层时，位于脊部两侧的AlInP电流收缩层13可靠地被抗蚀剂膜保护而不被过度蚀刻。 AlInP电流收缩层13有效地使电流收缩功能起作用，从而获得低阈值电流和低功耗的半导体激光器件。

78. 发明授权

US06983004B2 Laser diode and semiconductor light-emitting device producing visible-wavelength radiation 失效
公开(公告)号：US06983004B2
公开(公告)日：2006-01-03
申请号：US10427909
申请日：2003-05-02
申请人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
发明人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
IPC分类号： H01S5/00
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

79. 发明申请

US20050280022A1 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050280022A1
公开(公告)日：2005-12-22
申请号：US11154807
申请日：2005-06-17
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L29/24 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0422 , H01S5/0655 , H01S5/2009 , H01S5/2206 , H01S5/2218 , H01S5/2232 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.
摘要翻译：本发明旨在提供一种具有低阈值电流的长寿命半导体激光器件，并且可用于使用氮化物半导体层的蓝紫色半导体激光器件中的高输出操作。在半导体激光器件中，在GaN衬底1上依次形成以下的层：n型GaN层2; n型AlGaN包覆层3，第一n型GaN引导层4，和p型AlGaN阻挡层6（电流阻挡层），另外在p型AlGaN阻挡层6的一部分上形成条状开口，形成第二n型GaN引导层5以覆盖开口并且在第二n型GaN引导层5上依次形成以下层：InGaN多量子阱有源层7; 未掺杂的GaN引导层8; p型AlGaN电子溢出抑制层9，p型AlGaN包覆层10和p型GaN接触层11。

80. 发明申请

US20050084991A1 Method for manufacturing semiconductor optical amplifier having planar buried heterostructure 有权
标题翻译：具有平面掩埋异质结构的半导体光放大器的制造方法
公开(公告)号：US20050084991A1
公开(公告)日：2005-04-21
申请号：US10844321
申请日：2004-05-13
申请人： Dong Lee , Eun Sim , Ki Kim , Moon Park
发明人： Dong Lee , Eun Sim , Ki Kim , Moon Park
IPC分类号： H01S5/30 , H01L21/00 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/50
CPC分类号： H01S5/5009 , H01S5/1014 , H01S5/2206 , H01S5/227 , H01S5/3213 , H01S2301/173 , H01S2301/18
摘要： Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing a first current blocking layer on the etched portions of the first cladding layer, the upper waveguide layer and the space layer of the upper waveguide, growing a second current blocking layer on the exposed portion of the first current block layer excluding the dielectric layer pattern; and after removing the dielectric layer pattern, forming a second cladding layer on the overall upper surface, and forming an electrode on the second cladding layer and the substrate, respectively.
摘要翻译：提供一种制造平面埋入式半导体光放大器的方法，其中集成了具有双芯结构的光斑尺寸转换器，包括以下步骤：在下敷层，下波导层和上包层上生长基板，通过使用电介质层图案的蚀刻工艺构图下包层，下波导层和上包层的厚度的一部分，以形成下波导; 在下包层，下波导层和上包层的蚀刻部分上生长平坦化层，以平滑表面; 在去除介电层图案之后，在整个上表面上生长空间层，上波导层和第一包层; 通过使用电介质层图案的蚀刻工艺图案化第一包层，上波导层和空间层，以形成具有水平锥面积的上波导; 在第一包层的蚀刻部分，上波导层和上波导的空间层上生长第一电流阻挡层之后，在除电介质层之外的第一电流块层的暴露部分上生长第二电流阻挡层模式; 并且在去除介电层图案之后，在整个上表面上形成第二包层，并分别在第二包覆层和基板上形成电极。

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