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71. 发明授权

US5442204A III-V Semiconductor heterostructure contacting a P-type II-VI compound 失效
标题翻译： III-V族异质结构与P型II-VI化合物接触
公开(公告)号：US5442204A
公开(公告)日：1995-08-15
申请号：US241840
申请日：1994-05-12
申请人： Piotr M. Mensz
发明人： Piotr M. Mensz
IPC分类号： H01L29/221 , H01L29/267 , H01L33/00 , H01L33/28 , H01S5/00 , H01S5/042 , H01S5/327 , H01S5/347 , H01L29/161
CPC分类号： H01L33/28 , B82Y20/00 , H01L29/221 , H01L29/267 , H01L33/0087 , H01S5/0421 , H01S5/327 , H01S5/347
摘要： A semiconductor structure useful in blue light emitting diodes and diode lasers is disclosed. The structure is formed of a substrate of p- type GaAs, a layer of a p- type II-VI compound of the formula Zn.sub.x Q.sub.1-x S.sub.y Se.sub.1-x where Q=Mg, Cd or Mn, 0.5.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1, separated from the substrate by a series of thin epitaxial undoped or p-doped layers including a layer of In.sub.0.5 Al.sub.0.5 P in contact with the layer of the II-VI compound, a layer of In.sub.0.5 Ga.sub.0.5 P or of Al.sub.x Ga.sub.1-x As where x=0.1-0.3 contacting the substrate, a layer of In.sub.0.5 Ga.sub.0.5 P contacting the layer of Al.sub.x Ga.sub.1-x P and at least one layer of In.sub.0.5 Al.sub.2 Ga.sub.0.5-z P where 0
摘要翻译：公开了一种在蓝色发光二极管和二极管激光器中有用的半导体结构。该结构由p型GaAs衬底，其中Q = Mg，Cd或Mn，0.5≤x≤1的式ZnxQ1-xSySe1-x的p型II-VI化合物层形成和通过一系列薄的外延未掺杂或p掺杂层与衬底分离，包括与II-VI化合物层接触的In0.5Al0.5P层，层的In0.5Ga0.5P或AlxGa1-xAs，其中x = 0.1-0.3与衬底接触，接触Al x Ga 1-x P层和至少一层In 0.5 Al 2 Ga 0.5-z P层的In0.5Ga0.5P层，其中 0

72. 发明授权

US4686373A Infrared imager 失效
标题翻译：红外成像仪
公开(公告)号：US4686373A
公开(公告)日：1987-08-11
申请号：US853369
申请日：1986-04-15
申请人： Claude E. Tew , Adam J. Lewis, Jr.
发明人： Claude E. Tew , Adam J. Lewis, Jr.
IPC分类号： H01L21/465 , H01L21/471 , H01L21/473 , H01L21/60 , H01L27/146 , H01L29/221 , H04N5/33 , H01J40/14
CPC分类号： H01L21/76897 , H01L21/465 , H01L21/471 , H01L21/473 , H01L27/14601 , H01L27/14649 , H01L29/221 , H04N5/33
摘要： An infrared imager, wherein an array of detection devices is formed in a thin layer of HgCdTe, which is bonded to a silicon substrate containing a corresponding array of averaging capacitors with addressing and output connections, and via holes through (or bump bonding pads on) the HgCdTe are used to connect each detection device to its corresponding averaging capacitor. The signal from each detection device is repeatedly averaged into its averaging capacitor, so that the output of each pixel site is sensed as an average over a number of read cycles which provides a greatly improved signal-to-noise ratio.
摘要翻译：一种红外成像仪，其中一组检测装置形成在HgCdTe的薄层中，该薄层与包含具有寻址和输出连接的相应阵列的平均电容器的硅衬底以及通孔（或凸点焊盘）连接， HgCdTe用于将每个检测装置连接到相应的平均电容器。来自每个检测装置的信号被重复地平均到其平均电容器中，使得每个像素位置的输出被感测为多个读取周期的平均值，这提供了极大改善的信噪比。

73. 发明授权

US4684812A Switching circuit for a detector array 失效
标题翻译：检测器阵列的开关电路
公开(公告)号：US4684812A
公开(公告)日：1987-08-04
申请号：US851918
申请日：1986-04-15
申请人： Claude E. Tew , Adam J. Lewis, Jr.
发明人： Claude E. Tew , Adam J. Lewis, Jr.
IPC分类号： H01L21/465 , H01L21/471 , H01L21/473 , H01L21/60 , H01L27/146 , H01L29/221 , H04N5/33 , H01J40/14
CPC分类号： H01L21/76897 , H01L21/465 , H01L21/471 , H01L21/473 , H01L27/14601 , H01L27/14649 , H01L29/221 , H04N5/33
摘要： An infrared imager, wherein a transparent gate is separated from a very narrow bandgap semiconductor (such as HgCdTe) by a thin dielectric. The gate is biased to create a depletion well in a semiconductor, and photo-generated carriers are collected in the well. The gate voltage is sensed to measure the accumulated charge. Preferably the accumulated charge is not sensed directly from the gate, but the gate output is repeatedly averaged with another capacitor, so that the output of the imager is sensed as an average over a number of read cycles, which provides a greatly improved signal-to-noise ratio. Preferably an array of the MIS detection devices is formed in a thin layer of HgCdTe, which is bonded to a silicon substrate containing a corresponding array of the averaging capacitors with addressing and output connections, and via holes through the HgCdTe are used to connect each detection device to its corresponding averaging capacitor.
摘要翻译：一种红外成像器，其中透明栅极通过薄电介质与非常窄的带隙半导体（例如HgCdTe）分离。栅极被偏置以在半导体中产生耗尽阱，并且光生载流子被收集在阱中。感测栅极电压以测量累积的电荷。优选地，不直接从栅极感测累积的电荷，而是使栅极输出与另一个电容器重复地平均，使得成像器的输出被感测为多个读取周期上的平均值，这提供了大大改善的信号 - 比例。优选地，MIS检测装置的阵列形成在HgCdTe的薄层中，其被结合到含有对准阵列的平均电容器的硅衬底，其具有寻址和输出连接，并且通过HgCdTe的通孔用于连接每个检测器件到其相应的平均电容器。

74. 发明授权

US4632886A Sulfidization of compound semiconductor surfaces and passivated mercury cadmium telluride substrates 失效
标题翻译：化合物半导体表面和钝化的碲化镉基底的硫化
公开(公告)号：US4632886A
公开(公告)日：1986-12-30
申请号：US656057
申请日：1984-09-28
申请人： Towfik H. Teherani , Arturo Simmons
发明人： Towfik H. Teherani , Arturo Simmons
IPC分类号： H01L21/471 , H01L29/221 , H01L31/0296 , B32B9/00 , C25D9/06
CPC分类号： H01L31/02966 , H01L21/471 , H01L29/221
摘要： The disclosure relates to a method of passivating mercury cadmium telluride substrates wherein a substrate surface is lapped and cleaned and then placed in an electrolyte solution containing sulfide ions to electrolytically grow a sulfide passivating layer on the lapped and cleaned surface. A preferred electrolyte solution is formed with sodium sulfide, water and ethylene glycol.
摘要翻译：本公开涉及一种钝化水银碲化镉衬底的方法，其中衬底表面被研磨和清洁，然后放置在含有硫化物离子的电解质溶液中，以在研磨和清洁的表面上电解生长硫化物钝化层。优选的电解质溶液由硫化钠，水和乙二醇形成。

75. 发明授权

US4105477A Doping of (Hg,Cd)Te with a Group VA element 失效
标题翻译：（HG，CD）TE与组VA元素的掺杂
公开(公告)号：US4105477A
公开(公告)日：1978-08-08
申请号：US846739
申请日：1977-10-31
申请人： Eric S. Johnson , Joseph L. Schmit
发明人： Eric S. Johnson , Joseph L. Schmit
IPC分类号： C30B31/00 , H01L21/383 , H01L29/221 , H01L21/04
CPC分类号： H01L29/221 , C30B29/48 , C30B31/00 , H01L21/383 , Y10S438/971
摘要： Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Most preferred are phosphorus, arsenic and antimony. Also disclosed are junctions formed by two adjacent regions of mercury cadmium telluride in which one of the regions contains an acceptor concentration increasing amount of nitrogen phosphorus, arsenic, bismuth or antimony. A method is disclosed which permits diffusion of these additives into a body of already formed mercury cadmium telluride.

76. 发明授权

US4000508A Ohmic contacts to p-type mercury cadmium telluride 失效
公开(公告)号：US4000508A
公开(公告)日：1976-12-28
申请号：US596890
申请日：1975-07-17
申请人： Robert J. Hager , Eric S. Johnson , M. Walter Scott , Ernest L. Stelzer
发明人： Robert J. Hager , Eric S. Johnson , M. Walter Scott , Ernest L. Stelzer
IPC分类号： H01L21/445 , H01L29/221 , H01L29/45 , H01L31/103 , H01L29/161 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L31/1032 , H01L21/445 , H01L24/05 , H01L29/221 , H01L29/45 , H01L2224/04042 , H01L2224/48463 , H01L2924/12043 , H01L2924/15747
摘要： Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

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