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71. 发明申请

US20110170366A1 TEMPERATURE DETECTOR IN AN INTEGRATED CIRCUIT 失效
标题翻译：一体化电路中的温度检测器
公开(公告)号：US20110170366A1
公开(公告)日：2011-07-14
申请号：US13053727
申请日：2011-03-22
申请人： Chung Zen Chen
发明人： Chung Zen Chen
IPC分类号： G11C7/04 , G11C8/00
CPC分类号： G11C7/04 , G11C11/406 , G11C11/40626 , G11C11/4074 , G11C2211/4068
摘要： A method for determining a temperature in a circuit comprises receiving a periodic signal. A frequency of the periodic signal is an increasing function of temperature. A number of oscillations of the periodic signal is determined during a time interval. A length of the time interval is an increasing function of temperature. The temperature is based on the determined number of oscillations.
摘要翻译：用于确定电路中的温度的方法包括接收周期信号。周期信号的频率是温度的增加函数。在时间间隔期间确定周期信号的多个振荡。时间间隔的长度是温度的增加函数。温度基于确定的振荡次数。

72. 发明申请

US20110110175A1 MEMORY REFRESH SYSTEM AND OPERATING METHOD THEREOF 有权
标题翻译：存储器刷新系统及其操作方法
公开(公告)号：US20110110175A1
公开(公告)日：2011-05-12
申请号：US12616910
申请日：2009-11-12
申请人： Meng-Fan Chang , Chih-Wen Cheng
发明人： Meng-Fan Chang , Chih-Wen Cheng
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C11/40615 , G11C11/40626 , G11C2207/104 , G11C2211/4061
摘要： A memory refresh system includes a comparative detection circuit, a logic circuit, and a timing circuit. The comparative detection circuit detects a voltage of the storage capacitor of a memory cell of the memory and generates a corresponding digital code by comparing the voltage with a reference voltage. Each memory cell has a corresponding digital code. The combination of the digital codes of the memory cells forms a first state. After a specific period of time, the voltages of the storage capacitors of the memory cells are once detected by the comparative detection circuit, and corresponding digital codes are generated and combined to form a second state. The logic circuit compares the first state and the second state to determining whether or not to change the refresh period of a refresh period detecting process. The timing circuit changes the refresh period according to the determination result of the logic circuit.
摘要翻译：存储器刷新系统包括比较检测电路，逻辑电路和定时电路。比较检测电路检测存储器的存储单元的存储电容器的电压，并通过将电压与参考电压进行比较来产生相应的数字代码。每个存储单元具有相应的数字代码。存储器单元的数字代码的组合形成第一状态。经过一定时间后，由比较检测电路一次检测存储单元的存储电容器的电压，生成并组合相应的数字代码，形成第二状态。逻辑电路比较第一状态和第二状态，以确定是否改变刷新周期检测处理的刷新周期。定时电路根据逻辑电路的判定结果改变刷新周期。

73. 发明授权

US07929366B2 Temperature detector in an integrated circuit 有权
标题翻译：集成电路中的温度检测器
公开(公告)号：US07929366B2
公开(公告)日：2011-04-19
申请号：US12619157
申请日：2009-11-16
申请人： Chung Zen Chen
发明人： Chung Zen Chen
IPC分类号： G11C7/04
CPC分类号： G11C7/04 , G11C11/406 , G11C11/40626 , G11C11/4074 , G11C2211/4068
摘要： A temperature detector in an integrated circuit comprises a temperature-dependent voltage generator, a ring oscillator, a timer and a clock-driven recorder. The temperature-dependent voltage generator is configured to generate at least one temperature-dependent voltage. The ring oscillator is configured to generate a clock signal, which is affected by one of the at least one temperature-dependent voltage. The timer is configured to generate a time-out signal, which is affected by one of the temperature-dependent voltage. The clock-driven recorder has a clock input terminal in response to the clock signal and time-out signal.
摘要翻译：集成电路中的温度检测器包括温度依赖性电压发生器，环形振荡器，定时器和时钟驱动记录器。温度依赖性电压发生器被配置为产生至少一个温度依赖电压。环形振荡器被配置为产生受至少一个温度相关电压之一影响的时钟信号。定时器被配置为产生受温度依赖电压之一影响的超时信号。时钟驱动记录器具有响应于时钟信号和超时信号的时钟输入端子。

74. 发明申请

US20110066798A1 Semiconductor device having calibration circuit that adjusts an impedance of output buffer and data processing system including the same 有权
标题翻译：具有调整输出缓冲器的阻抗的校准电路的半导体器件及包括该校正电路的数据处理系统
公开(公告)号：US20110066798A1
公开(公告)日：2011-03-17
申请号：US12923261
申请日：2010-09-10
申请人： Nakaba Kaiwa , Yutaka Ikeda , Hiroki Fujisawa , Tetsuaki Okahiro
发明人： Nakaba Kaiwa , Yutaka Ikeda , Hiroki Fujisawa , Tetsuaki Okahiro
IPC分类号： G06F12/00 , G11C7/00
CPC分类号： G11C11/406 , G11C7/04 , G11C7/1057 , G11C7/20 , G11C11/40611 , G11C11/40626 , G11C11/4072 , G11C11/4093 , G11C2207/2254 , G11C2211/4061
摘要： A calibration operation can be performed automatically at a semiconductor device without issuing a calibration command from a controller. Because a calibration operation is performed in response to a fact that the auto refresh command has been issued for a predetermined number of times, a periodical calibration operation can be secured and a read operation or a write operation is not requested from a controller during a calibration operation.
摘要翻译：可以在半导体装置处自动执行校准操作，而不从控制器发出校准命令。由于响应于自动刷新命令已经发出预定次数的事实执行校准操作，所以可以确保周期性校准操作，并且在校准期间不从控制器请求读取操作或写入操作操作。

75. 发明授权

US07843752B2 Circuit and method for controlling refresh periods in semiconductor memory devices 有权
标题翻译：用于控制半导体存储器件中的刷新周期的电路和方法
公开(公告)号：US07843752B2
公开(公告)日：2010-11-30
申请号：US12111468
申请日：2008-04-29
申请人： Kwang-Sook Noh , Young-Hun Seo , Jong-Hyun Choi
发明人： Kwang-Sook Noh , Young-Hun Seo , Jong-Hyun Choi
IPC分类号： G11C7/04
CPC分类号： G11C11/402 , G11C11/406 , G11C11/40611 , G11C11/40626 , G11C2211/4061
摘要： An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This change in the period of the internal memory refresh command may be in response to detecting a change in temperature of the memory device. In particular, the refresh control circuit is configured so that the period of the internal memory refresh command signal is increased in response to detecting a reduction in temperature of the memory device.
摘要翻译：集成电路存储器件包括刷新控制电路，该刷新控制电路产生具有相对于由存储器件接收的外部存储刷新命令信号的周期而改变的周期的内部存储器刷新命令信号。内部存储器刷新命令的周期中的这种变化可以响应于检测到存储器件的温度变化。特别地，刷新控制电路被配置为使得响应于检测到存储器件的温度降低而使内部存储器刷新命令信号的周期增加。

76. 发明授权

US07813205B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07813205B2
公开(公告)日：2010-10-12
申请号：US12212066
申请日：2008-09-17
申请人： Atsumasa Sako
发明人： Atsumasa Sako
IPC分类号： G11C7/00 , G11C7/04 , G11C11/34
CPC分类号： G11C11/40626 , G11C11/406 , G11C2211/4061 , G11C2211/4067
摘要： A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.
摘要翻译：提供一种半导体存储器件，用于根据检测到的温度微小地改变刷新间隔，从而降低其功耗。温度检测器检测芯片的温度并输出相应的温度信号。参考温度信号输出单元根据选择信号，输出具有不同基准温度的相应参考温度信号以与芯片温度进行比较。温度比较单元通过温度信号和参考温度信号将芯片温度与参考温度进行比较。选择信号输出单元根据温度比较单元的比较结果来输出选择信号。刷新间隔控制单元根据温度比较单元的比较结果改变刷新间隔。

77. 发明申请

US20100232246A1 REFRESH CONTROL CIRCUIT AND METHOD FOR SEMICONDUCTOR MEMORY APPARATUS 失效
标题翻译：半导体存储器件的刷新控制电路和方法
公开(公告)号：US20100232246A1
公开(公告)日：2010-09-16
申请号：US12651043
申请日：2009-12-31
申请人： Won Kyung CHUNG
发明人： Won Kyung CHUNG
IPC分类号： G11C7/00
CPC分类号： G11C7/04 , G11C11/406 , G11C11/40626
摘要： A refresh control circuit of a semiconductor memory apparatus includes: a variable oscillator configured to generate a room-temperature oscillation signal and a limit-temperature oscillation signal in response to a temperature state signal; a cycle selector configured to selectively output the room temperature oscillation signal and the limit-temperature oscillation signal as a variable oscillation signal in response to the temperature state signal; a refresh signal generator configured to generate a refresh signal in response to the variable oscillation signal and a fixed oscillation signal; and a temperature state detector configured to generate the temperature state signal by detecting current temperature in response to the room-temperature oscillation signal and the fixed oscillation signal.
摘要翻译：半导体存储装置的刷新控制电路包括：可变振荡器，被配置为响应于温度状态信号产生室温振荡信号和极限温度振荡信号; 循环选择器，其被配置为响应于所述温度状态信号选择性地输出所述室温振荡信号和所述极限温度振荡信号作为可变振荡信号; 刷新信号发生器，被配置为响应于所述可变振荡信号和固定振荡信号产生刷新信号; 以及温度状态检测器，其被配置为通过响应于室温振荡信号和固定振荡信号检测当前温度来产生温度状态信号。

78. 发明授权

US07768857B2 Method of refreshing data in a storage location based on heat dissipation level and system thereof 有权
标题翻译：基于散热水平及其系统刷新存储位置中的数据的方法
公开(公告)号：US07768857B2
公开(公告)日：2010-08-03
申请号：US11949639
申请日：2007-12-03
申请人： Hermann Ruckerbauer
发明人： Hermann Ruckerbauer
IPC分类号： G11C7/04
CPC分类号： G11C11/406 , G11C7/04 , G11C11/40626 , G11C2211/4061
摘要： An integrated device comprising a storage location, wherein data stored in the storage location is repeatedly refreshed with a first predetermined refresh rate during a first period of time. The first period of time provides a first predetermined duration. After the end of the first period of time, the data is repeatedly refreshed with a second predetermined refresh rate.
摘要翻译：一种包括存储位置的集成设备，其中存储在所述存储位置中的数据在第一时间段期间以第一预定刷新率重复地刷新。第一时间段提供第一预定持续时间。在第一时间段结束之后，数据以第二预定刷新率反复刷新。

79. 发明申请

US20100142304A1 DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS WITH TEMPERATURE COMPENSATED SELF-REFRESH 有权
标题翻译：动态随机访问存储器件及其自动补偿存储器单元与温度补偿自刷新的方法
公开(公告)号：US20100142304A1
公开(公告)日：2010-06-10
申请号：US12705040
申请日：2010-02-12
申请人： Hong Beom PYEON
发明人： Hong Beom PYEON
IPC分类号： G11C7/00 , G11C8/08
CPC分类号： G11C11/406 , G11C7/04 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C2211/4061
摘要： A dynamic random access memory (DRAM) device has an array of DRAM cells of rows by columns. Each DRAM cell of the array is coupled with a wordline of a corresponding row and a bitline of a corresponding column. An entry into and an exit from the self-refresh mode are detected by a mode detector and a self-refresh mode signal is provided. An oscillation circuit generates in response to the self-refresh mode signal generates a basic time period. A first frequency divider/time period multiplier changes the basic time period in accordance with a process variation factor relating to the DRAM device. A second frequency divider/time period multiplier further changes the changed time period in accordance with a temperature change factor relating to the DRAM device. In the self-refresh mode, data stored in the DRAM cells is refreshed. In accordance with the two factors, the DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time.
摘要翻译：动态随机存取存储器（DRAM）器件具有逐列的DRAM单元阵列。阵列的每个DRAM单元与相应列的相应行和位线的字线相连。通过模式检测器检测进入和退出自刷新模式，并提供自刷新模式信号。响应于自刷新模式信号产生的振荡电路产生基本时间段。第一分频器/时间周期乘法器根据与DRAM器件有关的过程变化因素来改变基本时间周期。第二分频器/时间周期乘法器还根据与DRAM器件有关的温度变化因素来改变改变的时间周期。在自刷新模式下，存储在DRAM单元中的数据被刷新。根据这两个因素，DRAM器件执行并实现可变DRAM单元保留时间的可靠的自刷新。

80. 发明申请

US20100110818A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100110818A1
公开(公告)日：2010-05-06
申请号：US12684652
申请日：2010-01-08
申请人： Kaoru MORI , Shinya Fujioka , Yoshitaka Takahashi , Jun Ohno , Akihiro Funyu , Shinichiro Suzuki
发明人： Kaoru MORI , Shinya Fujioka , Yoshitaka Takahashi , Jun Ohno , Akihiro Funyu , Shinichiro Suzuki
IPC分类号： G11C7/00 , H03K17/00 , H03K17/56 , G11C8/00
CPC分类号： G11C7/04 , G11C11/406 , G11C11/40626 , G11C11/4072 , G11C11/4074
摘要： There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.
摘要翻译：提供了一种半导体器件，包括：温度传感器检测温度; 当从电源线供给电源电压时工作的内部电路; 连接在电源线和内部电路之间的开关; 以及控制电路，其进行控制，其中，在由所述温度传感器检测到的温度高于阈值的情况下，当所述内部电路工作时所述开关接通，并且当所述内部电路为在不工作的情况下，并且在由温度传感器检测到的温度低于阈值的情况下，当内部电路运行并且不工作时，开关导通。

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