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71. 发明授权

US08871409B2 Lithographic targets for uniformity control 有权
标题翻译：用于均匀性控制的平版印刷目标
公开(公告)号：US08871409B2
公开(公告)日：2014-10-28
申请号：US13810974
申请日：2011-07-25
申请人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
发明人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
IPC分类号： G03F1/00 , G03C5/00 , G03F7/00 , H01L21/66 , H01L21/68 , G03F1/38 , G03F1/44 , G03F7/20 , G06F17/50
CPC分类号： H01L22/12 , G03F1/38 , G03F1/44 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G06F17/50 , H01L21/68 , H01L21/681 , H01L21/682 , H01L22/20
摘要： A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.
摘要翻译：提供了具有第一组图案和第二组图案的光掩模，其中第一组图案对应于要在晶片上制造的电路图案，并且第二组图案具有尺寸，使得第二组图案图案不利于在第一曝光条件下使用基于第一组图案的光刻工艺产生的电路图案。基于在第一曝光条件下基于第一组图案的使用光刻处理产生的电路图案的第二组图案来确定光掩模的临界尺寸分布。

72. 发明授权

US08797554B2 Determining a structural parameter and correcting an asymmetry property 有权
标题翻译：确定结构参数并校正不对称性质
公开(公告)号：US08797554B2
公开(公告)日：2014-08-05
申请号：US13891410
申请日：2013-05-10
申请人： Alexander Straaijer
发明人： Alexander Straaijer
IPC分类号： G01B11/28 , G01B11/24 , G01B11/02 , G03F7/20
CPC分类号： G01B11/24 , G01B11/02 , G03F7/70616 , G03F7/70633
摘要： A method of determining a structural parameter related to process-induced asymmetry, the method including: illuminating a structure, having an asymmetry property and a sub-structure susceptible to process-induced asymmetry, with radiation with a plurality of illumination conditions, at a first location of a substrate, determining a difference between measured asymmetry properties of the structure obtained with each of the plurality of illumination conditions, calculating a differential dependence of a difference between modeled asymmetry properties simulated for illumination by each of the plurality of illumination conditions on a structural parameter representing process-induced asymmetry of the sub-structure, and determining a value of the structural parameter using the determined difference and the calculated differential dependence.
摘要翻译：一种确定与过程引起的不对称相关的结构参数的方法，所述方法包括：首先用具有多个照明条件的辐射照射具有对过程引起的不对称性的易受制于不对称性质和亚结构的结构确定衬底的位置，确定用多个照明条件中的每一个获得的结构的测量不对称性之间的差异，计算针对结构上的多个照明条件中的每一个模拟的用于照明的建模不对称性之间的差的差分依赖性表示子结构的过程引起的不对称的参数，以及使用所确定的差和所计算的微分依赖性来确定结构参数的值。

73. 发明授权

US08780320B2 Monitoring apparatus and method particularly useful in photolithographically processing substrates 有权
标题翻译：监控设备和方法特别适用于光刻处理基板
公开(公告)号：US08780320B2
公开(公告)日：2014-07-15
申请号：US13936795
申请日：2013-07-08
申请人： Nova Measuring Instruments Ltd.
发明人： Giora Dishon , Moshe Finarov , Zvi Nirel , Yoel Cohen
IPC分类号： G03B27/32 , G03B27/68 , G03B27/52 , G03F7/30
CPC分类号： G03F7/70058 , G01B11/14 , G01N21/88 , G01N21/9501 , G01N21/956 , G01N2021/8867 , G03F7/3028 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70675 , G03F7/7075 , G03F7/70991 , H01L21/67155
摘要： Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.
摘要翻译：用于根据预定的光刻工艺处理衬底的设备包括其中装载衬底的装载站，其中衬底涂覆有光致抗蚀剂材料的涂覆站，其中光致抗蚀剂涂层通过掩模暴露于光的曝光站具有预定图案以在光致抗蚀剂涂层上产生掩模的潜像，其中潜像显影的显影站，卸载基板的卸载站和用于相对于预定参数监测基板的监控站的光刻工艺。

74. 发明授权

US08731273B2 Method and device for measuring the relative local position error of one of the sections of an object that is exposed section by section 有权
标题翻译：用于测量被逐个暴露的对象的一个部分的相对局部位置误差的方法和装置
公开(公告)号：US08731273B2
公开(公告)日：2014-05-20
申请号：US13130600
申请日：2009-11-28
申请人： Michael Arnz , Dirk Beyer , Wolfgang Harnisch , Thomas Scheruebl
发明人： Michael Arnz , Dirk Beyer , Wolfgang Harnisch , Thomas Scheruebl
IPC分类号： G06K9/40 , G01N21/00
CPC分类号： G03F7/70633 , B82Y10/00 , B82Y40/00 , G03F1/84 , G03F7/70616 , H01J37/3174
摘要： A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
摘要翻译：提供了一种用于测量逐段暴露的物体的一个部分（特别是光刻掩模或晶片）的相对局部位置误差的方法，每个暴露部分具有多个测量标记，其中）以放大的方式成像大于该部分的对象的区域，并且被检测为图像，b）基于检测到的图像确定检测图像中包含的测量标记的位置误差，c）校正位置误差是通过由放大的成像和检测引起的位置误差分量从确定的测量标记的位置误差中提取导出的，d）基于校正位置导出一个部分的相对局部位置误差测量标记的误差。

75. 发明授权

US08717536B2 Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product 有权
标题翻译：光刻设备，设备制造方法及相关数据处理设备及计算机程序产品
公开(公告)号：US08717536B2
公开(公告)日：2014-05-06
申请号：US13009250
申请日：2011-01-19
申请人： Boris Menchtchikov , Alexander Viktorovych Padiy
发明人： Boris Menchtchikov , Alexander Viktorovych Padiy
IPC分类号： G03B27/42 , G03B27/54 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70258 , G03F7/70616
摘要： A lithographic apparatus operates by moving a substrate and a patterning device relative to each other in a sequence of movements such that a pattern is applied at a successive portions on the substrate. Each portion of the substrate is patterned by a scanning operation in which the patterning device is scanned through the radiation beam while synchronously scanning the substrate through the patterned radiation beam so as to apply the pattern to the desired portion on the substrate. An intrafield correction is applied during each scanning operation so as to compensate for distortion effects which vary during the scanning operation. The intrafield correction includes corrective variations of one or more properties of the projection system, and optionally out-of-plane movements of the patterning device and/or substrate table.
摘要翻译：平版印刷设备通过以一系列运动相对于彼此移动基板和图案形成装置来操作，使得在基板上的连续部分施加图案。通过扫描操作来对衬底的每个部分进行构图，其中图案形成装置通过辐射束扫描，同时通过图案化的辐射束同步扫描衬底，以将图案施加到衬底上的期望部分。在每次扫描操作期间，进行场内校正，以补偿在扫描操作期间变化的失真效应。场内校正包括投影系统的一个或多个特性的校正变化，以及图案形成装置和/或衬底台的任意的平面外运动。

76. 发明授权

US08638422B2 Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus 有权
标题翻译：曝光方法，曝光装置，制造装置的方法以及曝光装置的评价方法
公开(公告)号：US08638422B2
公开(公告)日：2014-01-28
申请号：US11886506
申请日：2006-03-17
申请人： Kenichi Shiraishi
发明人： Kenichi Shiraishi
IPC分类号： G03B27/32 , G03B27/42 , G03B27/52 , G03B27/58 , G03C5/00
CPC分类号： G03F7/70775 , G03F7/70341 , G03F7/70358 , G03F7/70516 , G03F7/70525 , G03F7/70616 , G03F7/70725
摘要： An exposure method includes a first step for measuring position information of a substrate while controlling a substrate stage to move the substrate stage in a state that an optical path space is filled with a liquid under a predetermined condition; a second step for obtaining a movement control accuracy of the substrate stage based on a result of the measurement; a third step for determining an exposure condition, for exposing the substrate, based on the obtained movement control accuracy; and a fourth step for exposing the substrate based on the determined exposure condition. This makes it possible to satisfactorily expose the substrate at the time of exposing the substrate based on the liquid immersion method.
摘要翻译：曝光方法包括：第一步骤，用于在预定条件下，在光路空间被填充有液晶的状态的同时控制衬底台移动衬底台，同时测量衬底的位置信息; 基于测量结果获得衬底载物台的移动控制精度的第二步骤; 第三步骤，用于基于所获得的移动控制精度来确定用于使基板曝光的曝光条件; 以及基于所确定的曝光条件曝光所述基板的第四步骤。这使得可以在基于浸液方法使基板曝光时令人满意地曝光基板。

77. 发明申请

US20130295698A1 LITHOGRAPHIC TARGETS FOR UNIFORMITY CONTROL 有权
标题翻译：用于均匀控制的平台目标
公开(公告)号：US20130295698A1
公开(公告)日：2013-11-07
申请号：US13810974
申请日：2011-07-25
申请人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
发明人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： H01L22/12 , G03F1/38 , G03F1/44 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G06F17/50 , H01L21/68 , H01L21/681 , H01L21/682 , H01L22/20
摘要： A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.
摘要翻译：提供了具有第一组图案和第二组图案的光掩模，其中第一组图案对应于要在晶片上制造的电路图案，并且第二组图案具有尺寸，使得第二组图案图案不利于在第一曝光条件下使用基于第一组图案的光刻工艺产生的电路图案。基于在第一曝光条件下基于第一组图案的使用光刻处理产生的电路图案的第二组图案来确定光掩模的临界尺寸分布。

78. 发明授权

US08504333B2 Method for selecting sample positions on a substrate, method for providing a representation of a model of properties of a substrate, method of providing a representation of the variation of properties of a substrate across the substrate and device manufacturing method 有权
标题翻译：用于选择衬底上的样品位置的方法，用于提供衬底的性质模型的表示的方法，提供衬底跨过衬底的性质变化的表示的方法和器件制造方法
公开(公告)号：US08504333B2
公开(公告)日：2013-08-06
申请号：US12816723
申请日：2010-06-16
申请人： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Scott Anderson Middlebrooks
发明人： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Scott Anderson Middlebrooks
IPC分类号： G06F7/60 , G06F17/10
CPC分类号： G03F9/7003 , G03F7/705 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G06T7/0006 , G06T2207/10061 , G06T2207/30148
摘要： A method for selecting sample positions on a substrate from a set of all available sample positions is provided, in which a representation of a model, which may represent the variation of one or more properties across the substrate, is analyzed in order to identify the sample positions having the greatest effect on the model.
摘要翻译：提供了一种从一组所有可用样本位置中选择衬底上的样本位置的方法，其中分析可以表示穿过衬底的一个或多个性质的变化的模型的表示，以便识别样品对模型影响最大的职位。

79. 发明授权

US08416412B2 Method for determination of residual errors 有权
标题翻译：确定残差的方法
公开(公告)号：US08416412B2
公开(公告)日：2013-04-09
申请号：US12513452
申请日：2007-10-23
申请人： Uwe Schellhorn , Matthias Manger
发明人： Uwe Schellhorn , Matthias Manger
IPC分类号： G01B11/00 , G01B11/14 , G06F19/00 , G01C17/38
CPC分类号： G03F7/70775 , G01B21/042 , G03F7/70516 , G03F7/706 , G03F7/70616 , G03F7/70725
摘要： There is provided a method for determining residual errors, compromising the following steps: in a first step, a test plate comprising a first pattern is used, and in a second step, a test plate comprising a second pattern which is reflected and/or rotated with respect to the first step is used.
摘要翻译：提供了一种用于确定残余误差的方法，损害了以下步骤：在第一步骤中，使用包括第一图案的测试板，并且在第二步骤中，测试板包括被反射和/或旋转的第二图案相对于第一步使用。

80. 发明授权

US08395772B2 Sensor, a table and lithographic apparatus 失效
标题翻译：传感器，桌子和光刻设备
公开(公告)号：US08395772B2
公开(公告)日：2013-03-12
申请号：US12818358
申请日：2010-06-18
申请人： Henricus Wilhelmus Maria Van Buel , Jeroen Thomas Broekhuijse , Vitaliy Prosyentsov , Sandra Van Der Graaf , Nina Vladimirovna Dziomkina
发明人： Henricus Wilhelmus Maria Van Buel , Jeroen Thomas Broekhuijse , Vitaliy Prosyentsov , Sandra Van Der Graaf , Nina Vladimirovna Dziomkina
IPC分类号： G01N21/00
CPC分类号： G03F7/7085 , G03F7/70341 , G03F7/70616
摘要： A sensor for an immersion system is disclosed. The sensor comprises: a sensing device, a transparent layer and an opaque patterning layer. The sensing device is configured to sense a property of a beam of radiation. The transparent layer is configured to allow the passage of a beam of radiation therethrough. The transparent layer covers the sensing device. The opaque patterning layer is configured to impart a pattern to the beam of radiation. In the patterning layer is an opening in which is located an infilling material. The infilling material is transparent to the beam of radiation and has a similar refractive index to that of the transparent layer.
摘要翻译：公开了一种用于浸没系统的传感器。传感器包括：感测装置，透明层和不透明图案层。感测装置被配置为感测辐射束的特性。透明层构造成允许辐射束通过其中。透明层覆盖感测装置。不透明图案层被配置为赋予辐射束图案。在图形层中是位于填充材料的开口。填充材料对辐射束是透明的，并且具有与透明层相似的折射率。

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