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71. 发明申请

US20110267593A1 METHOD AND APPARATUS FOR MAINTAINING DEPTH OF FOCUS 有权
标题翻译：维持聚焦深度的方法和装置
公开(公告)号：US20110267593A1
公开(公告)日：2011-11-03
申请号：US12772647
申请日：2010-05-03
申请人： Chang-Tsun Hsieh , Fu-Jye Liang , Tzung-Chi Fu , Li-Jui Chen , Chih-Ming Ke
发明人： Chang-Tsun Hsieh , Fu-Jye Liang , Tzung-Chi Fu , Li-Jui Chen , Chih-Ming Ke
IPC分类号： G03B27/53 , G01J3/28
CPC分类号： G03F7/70616 , G02B7/28 , G03F7/70575 , G03F7/70641 , G03F9/70 , G03F9/7026
摘要： A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.
摘要翻译：一种方法包括将辐射束沿着光轴引向工件支撑件，在第一时间测量光束的光谱以获得第一分布，在第二时间测量光束的光谱以获得第二分布，确定两个轮廓之间的光谱差异，并且基于该差异来调整沿着光轴的工件支撑件的位置。不同的方面涉及一种具有工件支撑件的装置，将导光束沿着光轴朝向工件支撑件的光束引导结构，光谱测量结构，其在第一次和第二次测量光束的光谱以获得相应的第一和第二轮廓，确定两个轮廓之间的差异的处理结构，以及基于该差异来调整沿着光轴的工件支撑件的位置的支撑调整结构。

72. 发明申请

US20110261339A1 SCATTEROMETER AND LITHOGRAPHIC APPARATUS 有权
标题翻译：散射仪和光刻设备
公开(公告)号：US20110261339A1
公开(公告)日：2011-10-27
申请号：US13126917
申请日：2009-10-12
申请人： Johan Maria Van Boxmeer , Nicolass Antonius Allegondus Johannes Van Asten , Arnold Sinke , Marnix Aldert Tas , Johannes Cornelis Maria Timmermans , Jascha Van Pommeren
发明人： Johan Maria Van Boxmeer , Nicolass Antonius Allegondus Johannes Van Asten , Arnold Sinke , Marnix Aldert Tas , Johannes Cornelis Maria Timmermans , Jascha Van Pommeren
IPC分类号： G01N21/47 , G03B27/52
CPC分类号： G03F7/70616 , G01N21/956
摘要： A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (65) that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (61). A focus controller (67) provides control signals representative of the relative positions of the focusing arrangement (15, 69) and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector (18) detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.
摘要翻译：用于测量衬底的性质的散射仪包括焦点感测装置，其包括将第一辐射束引导到聚焦装置上的装置（65），以由聚焦传感器装置（61）检测。聚焦控制器（67）提供表示聚焦装置（15,69）和基板（W）的相对位置的控制信号，其将第一辐射束聚焦在基板上。致动器装置根据控制信号调整聚焦装置的位置。照射装置使用聚焦装置将第二辐射束引导到基板上，测量检测器（18）在从基板反射之后检测第二辐射束。聚焦偏移布置调整由聚焦装置产生的聚焦以补偿第一辐射束与第二辐射束的聚焦之间的偏移。

73. 发明申请

US20110205520A1 Lithographic Apparatus and Device Manufacturing Method 有权
标题翻译：光刻设备和器件制造方法
公开(公告)号：US20110205520A1
公开(公告)日：2011-08-25
申请号：US13010409
申请日：2011-01-20
申请人： Alexander Viktorovych PADIY , Boris Menchtchikov
发明人： Alexander Viktorovych PADIY , Boris Menchtchikov
IPC分类号： G03B27/58
CPC分类号： G03F7/70516 , G03F7/70616
摘要： A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.
摘要翻译：一种方法产生用于光刻设备的至少一个监视晶片。监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索限定基线的测量值，从而确定从基准线的参数漂移。在这样做时，可以对漂移进行津贴和/或修正。通过使用光刻设备最初暴露监视器晶片以在每个监视器晶片上执行多次曝光确定来确定基线。还公开了相关的光刻设备。

74. 发明申请

US20110164228A1 Inspection Apparatus for Lithography 有权
标题翻译：光刻检验仪
公开(公告)号：US20110164228A1
公开(公告)日：2011-07-07
申请号：US12989902
申请日：2009-04-27
申请人： Marcus Adrianus Van De Kerkhof
发明人： Marcus Adrianus Van De Kerkhof
IPC分类号： G06F19/00 , G03B27/00
CPC分类号： G03F7/70633 , G01N21/211 , G01N21/9501 , G01N21/956 , G01N2201/06113 , G01N2201/10 , G03F7/70616
摘要： The invention relates to detecting targets located within patterns. The invention operates in the pupil plane by filtering the fourier transform from the surrounding pattern. In particular the method includes performing a fourier transform on reflected radiation data to form fourier transform data; removing portions of the fourier transform data which correspond to the target to form reduced fourier transform data; interpolating the portions of the reduced fourier transform data which were removed, to form product fourier transform data; and subtracting the product fourier transform data from the fourier transform data.
摘要翻译：本发明涉及检测位于图案内的目标。本发明通过从周围图案过滤傅立叶变换而在瞳孔平面中操作。特别地，该方法包括对反射辐射数据执行傅里叶变换以形成傅里叶变换数据; 去除与目标对应的傅里叶变换数据的部分，以形成缩小的傅里叶变换数据; 内插被去除的缩小傅立叶变换数据的部分，以形成乘积变换数据; 并从傅里叶变换数据中减去乘积傅立叶变换数据。

75. 发明申请

US20110141444A1 Inspection Apparatus for Lithography 有权
标题翻译：光刻检验仪
公开(公告)号：US20110141444A1
公开(公告)日：2011-06-16
申请号：US12933481
申请日：2009-04-08
申请人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
发明人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
IPC分类号： G03B27/54 , G01N21/55
CPC分类号： G03F7/70616 , G01N21/47 , G01N21/9501
摘要： A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.
摘要翻译：配置成测量衬底性质的散射仪包括被配置为提供辐射束的辐射源; 以及检测器，其被配置为检测从所述基板（W）的表面上的目标（30）反射的所述辐射束的光谱，并产生表示所述光谱的测量信号。该装置包括插入在辐射源和检测器之间的辐射路径中的光束整形器（51,53），光束整形器被配置为根据目标的形状和/或尺寸来调节光束的横截面。

76. 发明申请

US20110116077A1 EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers 有权
标题翻译： EUV高通量检测系统，用于在图案化的EUV面罩，面罩空白和晶圆上进行缺陷检测
公开(公告)号：US20110116077A1
公开(公告)日：2011-05-19
申请号：US12812950
申请日：2010-06-18
申请人： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bing-Ming Benjamin Tsai , David L. Brown
发明人： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bing-Ming Benjamin Tsai , David L. Brown
IPC分类号： G01N21/956
CPC分类号： G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
摘要： Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
摘要翻译：对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。特别地，检测器可以包括多个传感器模块。另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。在一个实施例中，光路大约2-3米长。

77. 发明授权

US07930654B2 System and method of correcting errors in SEM-measurements 有权
标题翻译：校正SEM测量误差的系统和方法
公开(公告)号：US07930654B2
公开(公告)日：2011-04-19
申请号：US12112835
申请日：2008-04-30
申请人： Uwe Kramer , Robert Wildfeuer
发明人： Uwe Kramer , Robert Wildfeuer
IPC分类号： G06F17/50
CPC分类号： H01J37/263 , G03F1/36 , G03F1/84 , G03F7/70441 , G03F7/70516 , G03F7/70616 , G03F7/70625 , G06T7/0006 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/265 , H01J37/28 , H01J2237/2826 , H01L22/12
摘要： Embodiments of the invention relate to correcting errors in scanning electron measurements during measuring structural dimensions of an integrated circuit for optical proximity correction by extracting feature edges of a test pattern within an image, calculating at least one scaling error of the image by comparing the extracted feature edges of assist structures with a layout pattern, modifying feature edges of test structures within the test pattern by incorporating the at least one scaling error so as to at least partially compensate the scaling errors, and verifying a model for optical proximity corrections and/or model input data by using the modified feature edges of the test structures.
摘要翻译：本发明的实施例涉及通过提取图像内的测试图案的特征边缘来测量用于光学邻近校正的集成电路的结构尺寸来校正扫描电子测量中的误差，通过将所提取的特征进行比较来计算图像的至少一个缩放误差具有布局图案的辅助结构的边缘，通过结合至少一个缩放误差来修改测试图案内的测试结构的特征边缘，以便至少部分地补偿缩放误差，以及验证光学邻近校正和/或模型的模型通过使用测试结构的修改后的特征边缘输入数据。

78. 发明申请

US20110007316A1 Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method 审中-公开
标题翻译：检验方法和装置，平版印刷设备，平版印刷加工单元和器件制造方法
公开(公告)号：US20110007316A1
公开(公告)日：2011-01-13
申请号：US12777486
申请日：2010-05-11
申请人： Johannes Matheus Marie DE WIT , Arnold Sinke , Marnix Aldert Tas , Ronald Franciscus Herman Hugers
发明人： Johannes Matheus Marie DE WIT , Arnold Sinke , Marnix Aldert Tas , Ronald Franciscus Herman Hugers
IPC分类号： G01J4/00
CPC分类号： G03F7/7085 , G01N21/47 , G01N21/9501 , G01N21/956 , G02B27/40 , G03F7/70616
摘要： An inspection apparatus configured to measure a property of a substrate includes an illumination source, a beam splitter, a first polarizer positioned between the illumination source and the beam splitter, an objective lens and an optical device that alters a polarization state of radiation traveling through it positioned between the beam splitter and the substrate and a second polarizer positioned between the beam splitter and a detector. An axis of the second polarizer is rotated with respect to an axis of the first polarizer. Radiation polarized by the first polarizer that reflects off any optical elements between the beam splitter and the optical device is prevented from entering the detector by the second polarizer. Only radiation that passes twice through the optical device has its polarization direction rotated so that it passes through the second polarizer and enters the detector.
摘要翻译：被配置为测量基板的特性的检查装置包括照明源，分束器，位于照明源和分束器之间的第一偏振器，物镜和光学装置，其改变穿过其的辐射的偏振状态位于分束器和基板之间，第二偏振器位于分束器和检测器之间。第二偏振器的轴线相对于第一偏振器的轴线旋转。通过第二偏振器防止由分光器和光学装置之间的任何光学元件反射的第一偏振器偏振的辐射进入检测器。只有通过光学装置两次的辐射，其偏振方向旋转，使得其通过第二偏振器并进入检测器。

79. 发明授权

US07864344B1 Method and system for measuring patterned structures 有权
标题翻译：用于测量图案结构的方法和系统
公开(公告)号：US07864344B1
公开(公告)日：2011-01-04
申请号：US12853453
申请日：2010-08-10
申请人： Moshe Finarov , Boaz Brill
发明人： Moshe Finarov , Boaz Brill
IPC分类号： G01B11/28 , G01B11/14
CPC分类号： G03F7/70616 , G01B11/24 , G01N21/4788 , G01N21/55 , G03F1/84
摘要： A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.
摘要翻译：提出了一种用于确定图案化结构中的线轮廓的方法和系统，其目的在于控制该结构的制造过程。图案化结构包括多个不同的层，结构中的图案由图案化区域和未图案化区域形成。进行至少第一次和第二次测量，每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明，检测从该结构返回的光的光谱特性，以及产生测量数据代表。分析通过第一测量获得的测量数据，从而确定结构的至少一个参数。然后，利用该确定的参数，同时分析通过第二测量获得的测量数据，使得能够确定结构的轮廓。

80. 发明授权

US07853904B2 Method and system for handling process related variations for integrated circuits based upon reflections 有权
标题翻译：基于反射处理集成电路的过程相关变化的方法和系统
公开(公告)号：US07853904B2
公开(公告)日：2010-12-14
申请号：US11768891
申请日：2007-06-26
申请人： David White
发明人： David White
IPC分类号： G06F17/50
CPC分类号： G03F7/70425 , G03F7/705 , G03F7/70616 , G03F7/70666
摘要： Disclosed is an approach for modeling and correcting for the effects of reflections during lithography processing. Thickness differences across the surfaces in different integrated circuit layers may result in reflectance-related variations. The variations may be modeled and accounted for during the design process for the integrated circuit.
摘要翻译：公开了一种用于在光刻处理期间对反射的影响进行建模和校正的方法。不同集成电路层中的表面之间的厚度差可能导致反射率相关的变化。在集成电路的设计过程中，可以对变化进行建模和考虑。

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