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71. 发明授权

US10861674B2 Compensated location specific processing apparatus and method 有权
公开(公告)号：US10861674B2
公开(公告)日：2020-12-08
申请号：US16665357
申请日：2019-10-28
申请人： TEL Epion Inc.
发明人： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC分类号： H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
摘要： An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

72. 发明授权

US10497540B2 Compensated location specific processing apparatus and method 有权
公开(公告)号：US10497540B2
公开(公告)日：2019-12-03
申请号：US15863732
申请日：2018-01-05
申请人： TEL Epion Inc.
发明人： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC分类号： H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
CPC分类号： H01J37/304 , H01J37/08 , H01J37/147 , H01J37/20 , H01J2237/0473 , H01J2237/0812 , H01J2237/202 , H01J2237/20228 , H01J2237/30472
摘要： An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

73. 发明授权

US10096527B2 Hybrid corrective processing system and method 有权
公开(公告)号：US10096527B2
公开(公告)日：2018-10-09
申请号：US15242376
申请日：2016-08-19
申请人： TEL Epion Inc.
发明人： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC分类号： H01L21/66 , H01J37/32 , H01L21/3065 , G05B19/418
摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

74. 发明授权

US09343259B2 GCIB nozzle assembly 有权
标题翻译： GCIB喷嘴总成
公开(公告)号：US09343259B2
公开(公告)日：2016-05-17
申请号：US14815265
申请日：2015-07-31
申请人： TEL Epion Inc.
发明人： Matthew C. Gwinn , Avrum Freytsis , Robert K. Becker
IPC分类号： H01J37/08 , H01J37/305
CPC分类号： H01J37/08 , H01J37/305 , H01J2237/006 , H01J2237/0206 , H01J2237/061 , H01J2237/0812 , H01J2237/0822 , H01J2237/3151
摘要： A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.
摘要翻译：描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。

75. 发明授权

US09029808B2 Low contamination scanner for GCIB system 有权
标题翻译： GCIB系统低污染扫描仪
公开(公告)号：US09029808B2
公开(公告)日：2015-05-12
申请号：US14444791
申请日：2014-07-28
申请人： TEL Epion Inc.
发明人： Matthew C. Gwinn , Avrum Freytsis , Jerry Negrotti , Robert K. Becker
IPC分类号： H01J37/20 , G21K5/08 , H01J37/317
CPC分类号： H01J37/20 , G21K5/08 , H01J37/317 , H01J2237/20228 , H01J2237/20235 , H01J2237/20278
摘要： Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. The apparatus further includes shields and other features for reducing process contamination resulting from scattering of the GCIB from the scanning apparatus.
摘要翻译：公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。该装置还包括屏蔽件和其它特征，用于减少GCIB从扫描装置散射而产生的工艺污染。

76. 发明授权

US08877299B2 Method for enhancing a substrate using gas cluster ion beam processing 有权
标题翻译：使用气体团簇离子束加工增强基体的方法
公开(公告)号：US08877299B2
公开(公告)日：2014-11-04
申请号：US12415867
申请日：2009-03-31
申请人： John J. Hautala , Nathan E. Baxter , Koji Yamashita
发明人： John J. Hautala , Nathan E. Baxter , Koji Yamashita
IPC分类号： C23C14/02 , H05H1/24 , H01L21/263 , H01J37/08 , H01J37/317
CPC分类号： H01L21/2633 , H01J37/08 , H01J37/317 , H01J2237/022 , H01J2237/0812
摘要： A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.
摘要翻译：描述了增强衬底上的材料层的方法。该方法包括建立气体簇离子束（GCIB），以及通过将基板的主体区域暴露于GCIB来处理基板的主体区域。用GCIB处理可以选择性地除去不需要的物质和/或向宿主区域引入所需的物质。

77. 发明授权

US08722542B2 Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via 有权
标题翻译：气体簇离子束工艺，用于在高纵横比接触通孔中打开共形层
公开(公告)号：US08722542B2
公开(公告)日：2014-05-13
申请号：US13841388
申请日：2013-03-15
申请人： TEL Epion Inc.
发明人： Christopher K. Olsen , Luis Fernandez
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32 , H01L21/31111 , H01L21/31116 , H01L21/76802 , H01L21/76831 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.
摘要翻译：描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。

78. 发明授权

US08703607B2 Method to alter silicide properties using GCIB treatment 有权
标题翻译：使用GCIB处理改变硅化物性质的方法
公开(公告)号：US08703607B2
公开(公告)日：2014-04-22
申请号：US13888924
申请日：2013-05-07
申请人： TEL Epion Inc.
发明人： Noel Russell , John J. Hautala , John Gumpher
IPC分类号： H01L21/20
CPC分类号： H01L21/28506 , C23C14/02 , C23C14/024 , C23C14/16 , C23C14/5833 , H01J37/08 , H01J37/317 , H01J2237/0812 , H01J2237/3165 , H01L21/02063 , H01L21/28518 , H01L21/3205
摘要： A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
摘要翻译：对半导体装置的制造方法进行说明。该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

79. 发明授权

US08592784B2 Method for modifying a material layer using gas cluster ion beam processing 有权
标题翻译：使用气体簇离子束处理修饰材料层的方法
公开(公告)号：US08592784B2
公开(公告)日：2013-11-26
申请号：US13181910
申请日：2011-07-13
申请人： John J. Hautala , Nathan E. Baxter
发明人： John J. Hautala , Nathan E. Baxter
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J27/026 , H01J37/08 , H01J37/3171 , H01J37/3178 , H01J2237/0812 , H01J2237/316 , H01J2237/3165 , H01J2237/31701 , H01J2237/31732
摘要： A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.
摘要翻译：描述了改变衬底上的材料层的方法。该方法包括在基底上形成材料层。此后，该方法包括建立具有每原子约0.25eV至约100eV /原子比的每原子比能量的气体簇离子束（GCIB），以及通过将材料层暴露于GCIB来修饰该材料层。

80. 发明授权

US08513138B2 Gas cluster ion beam etching process for Si-containing and Ge-containing materials 有权
标题翻译：用于含Si和Ge的材料的气体簇离子束蚀刻工艺
公开(公告)号：US08513138B2
公开(公告)日：2013-08-20
申请号：US13223758
申请日：2011-09-01
申请人： Yan Shao , Martin D. Tabat , Christopher K. Olsen , Ruairidh MacCrimmon
发明人： Yan Shao , Martin D. Tabat , Christopher K. Olsen , Ruairidh MacCrimmon
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J2237/3346
摘要： A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
摘要翻译：描述了对含Si材料和/或含Ge材料进行气体簇离子束（GCIB）蚀刻处理的方法和系统。特别地，GCIB蚀刻处理包括形成含有卤素元素的GCIB。

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