专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06984477B2 Resist pattern forming apparatus and method thereof 失效
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US06984477B2
公开(公告)日：2006-01-10
申请号：US09963527
申请日：2001-09-27
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F9/00 , G03F7/20 , G03F7/30 , G03F7/40 , B05D3/12
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and an appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

72. 发明授权

US06667238B1 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US06667238B1
公开(公告)日：2003-12-23
申请号：US09545504
申请日：2000-04-07
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： H01L2100
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.
摘要翻译：抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部，被抛光清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

73. 发明授权

US06593045B2 Substrate processing apparatus and method 有权
标题翻译：基板加工装置及方法
公开(公告)号：US06593045B2
公开(公告)日：2003-07-15
申请号：US09902159
申请日：2001-07-11
申请人： Norikatsu Sato , Kunie Ogata , Yoshio Kimura , Hiroshi Tomita , Seiji Nakashima , Hidehiko Kamiya
发明人： Norikatsu Sato , Kunie Ogata , Yoshio Kimura , Hiroshi Tomita , Seiji Nakashima , Hidehiko Kamiya
IPC分类号： G03F900
CPC分类号： H01L21/67161 , G01N21/9501 , H01L21/67178 , H01L21/67184 , H01L21/67778 , H01L21/67781 , Y10S414/136 , Y10S414/137 , Y10S414/141
摘要： A cassette station, a processing station having a coating unit and a developing unit, and an inspecting station having a film thickness inspecting apparatus and a defect inspecting apparatus are disposed in the direction approximately perpendicular to the direction of the disposition of cassettes of the cassette station in such a manner that the inspecting station is disposed midway between the cassette station and the processing station. In the structure, the inspecting station and the processing station are connected and wafers are automatically transferred among the stations, operations from the substrate process to the inspection can be simplified and the time period necessary therefore can be shortened.
摘要翻译：具有涂布单元和显影单元的盒式磁带站，具有膜厚度检查装置和缺陷检查装置的检查站沿大致垂直于盒式磁带机的盒的方向的方向设置以这样的方式，使得检查站位于盒站和处理站之间的中间。在结构中，检测站和处理站连接，晶片自动转移到站之间，可以简化从基板处理到检查的操作，从而可以缩短所需的时间。

74. 发明授权

US06506931B1 Process for producing aromatic carboxylic acid 失效
标题翻译：芳香族羧酸的制造方法
公开(公告)号：US06506931B1
公开(公告)日：2003-01-14
申请号：US09656997
申请日：2000-09-07
申请人： Masayasu Ishibashi , Hiroshi Tomita
发明人： Masayasu Ishibashi , Hiroshi Tomita
IPC分类号： C07C51255
CPC分类号： C07C51/265 , C07C63/26
摘要： A process for producing an aromatic carboxylic acid by a liquid phase oxidation of an alkylaromatic compound with molecular oxygen in a reaction solvent comprising a lower aliphatic carboxylic acid in the presence of an oxidation catalyst, in which an aromatic carboxylic acid having an improved hue of the powdery product thereof and exhibiting an improved light transmittance when dissolved in an aqueous solution of a base can be produced efficiently in a simple manner by suppressing contamination due to the intermediates and by-products formed by side reactions, the said process comprising performing the liquid phase oxidation of the alkylaromatic compound in the presence of a hydrogen gas-treated liquid containing the catalyst.
摘要翻译：在氧化催化剂存在下，通过在含有低级脂肪族羧酸的反应溶剂中通过烷基芳族化合物与分子氧进行液相氧化来制备芳族羧酸的方法，其中具有改进的色调的芳族羧酸通过抑制由副反应形成的中间体和副产物引起的污染，可以以简单的方式有效地制备溶解在碱的水溶液中时提高其透光度的粉末状产物，所述方法包括进行液相在含有催化剂的氢气处理液体存在下，烷基芳族化合物的氧化。

75. 发明授权

US06286524B1 Wafer drying apparatus and method with residual particle removability enhancement 失效
标题翻译：晶圆干燥装置和残留颗粒去除性提高方法
公开(公告)号：US06286524B1
公开(公告)日：2001-09-11
申请号：US09257384
申请日：1999-02-25
申请人： Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
发明人： Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
IPC分类号： B08B704
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.
摘要翻译：一种晶片干洗方法和装置，其能够消除或抑制灰尘和颗粒在干燥的晶片表面上的粘附，同时最小化其上的水痕的产生。为了实现这一点，晶片干燥装置被构造成包括其中容纳一组间隔开的硅晶片工件的表面清洁/干燥室结构。干燥室与真空排气装置可操作地相关联，用于将该室的内部保持在所需的低压。设置排水装置，用于迫使从晶片表面分离的含水量从干燥容器排出。在这样的晶片干燥过程中，晶片可被驱动高速旋转，从而加速晶片表面上剩余的水滴离心分离。优选地，在晶片旋转期间可以将所选择的吹扫气体进料到室中。在用于室抽真空的真空泵激活时或在完成这种真空排气之后，净化气体供应基本上同时启动。在一个说明性实施例中，可以使用超纯水冲洗腔室中的晶片。

76. 发明授权

US6103368A Antistatic polyester film and antistatic film laminate 失效
标题翻译：抗静电聚酯薄膜和抗静电薄膜层压板
公开(公告)号：US6103368A
公开(公告)日：2000-08-15
申请号：US29515
申请日：1998-02-27
申请人： Masayuki Fukuda , Satoshi Kitazawa , Shin-ichiro Okada , Hiroshi Tomita
发明人： Masayuki Fukuda , Satoshi Kitazawa , Shin-ichiro Okada , Hiroshi Tomita
IPC分类号： B05D5/12 , B05D7/04 , B05D7/24 , B29C55/02 , B29K67/00 , B29L7/00 , B29L9/00 , B32B7/02 , B32B27/18 , B32B27/36 , C08F20/52 , C08F20/60 , C08F290/00 , C08F299/02 , C08J7/04 , C08K5/36 , C08L67/00 , C09D5/00 , C09D133/02 , C09D133/26 , B32B27/08 , B32B27/30 , C08F20/58 , C08L39/04
CPC分类号： C08J7/047 , B32B27/36 , C08J2367/02 , C08J2433/00 , Y10T428/266 , Y10T428/31797
摘要： The present invention provides an antistatic polyester film having an antistatic layer formed of an antistatic agent (A) composed mainly of a polymer having a recurring unit of a structure expressed by the following formula (I) on at least one surface of a polyester film ##STR1## wherein R.sup.1 and R.sup.2 are each H or CH.sub.3, R.sup.3 is an alkylene group having a carbon number of 2 to 10, R.sup.4 and R.sup.5 are each a saturated hydrocarbon group having a carbon number of 1 to 5, R.sup.6 is an alkylene group having a carbon number of 2 to 5, n is a number of 0 to 40, m is a number of 1 to 40, and Y.sup.- is a halogen ion, a mono- or polyhalogenated alkyl ion, nitrate ion, sulfate ion, an alkylsulfate ion, sulfonate ion or an alkylsulfonate ion.
摘要翻译： PCT No.PCT / JP97 / 02341 Sec。 371日期1998年2月27日 102（e）1998年2月27日PCT PCT 1997年7月7日PCT公布。公开号WO98 / 02308 日本1998年1月22日本发明提供一种抗静电层，其具有由抗静电剂（A）形成的抗静电层，所述抗静电剂主要由具有下述式（I）表示的结构的重复单元的聚合物组成，的聚酯膜，其中R 1和R 2各自为H或CH 3，R 3为碳数为2至10的亚烷基，R 4和R 5各自为碳数为1至5的饱和烃基，R 6为亚烷基碳数为2〜5的数，n为0〜40的数，m为1〜40的数，Y为卤素离子，单卤代或多卤烷基离子，硝酸根离子，硫酸根离子，烷基硫酸根离子，磺酸根离子或烷基磺酸根离子。

77. 发明授权

US6090482A Silicone adhesive film 失效
标题翻译：硅胶胶片
公开(公告)号：US6090482A
公开(公告)日：2000-07-18
申请号：US870239
申请日：1997-06-05
申请人： Takanori Kawashima , Masayuki Fukuda , Toshifumi Ishikawa , Hiroshi Tomita
发明人： Takanori Kawashima , Masayuki Fukuda , Toshifumi Ishikawa , Hiroshi Tomita
IPC分类号： B32B27/00 , B32B27/36 , C08L83/00 , C09J7/02
CPC分类号： C09J7/025 , C08L83/00 , C09J2467/006 , C09J2483/005 , Y10T428/2843 , Y10T428/2852 , Y10T428/31663
摘要： A silicone adhesive film comprising (A) a biaxially oriented aromatic polyester film, and (B) a crosslinked primer layer which is present on at least one surface of the aromatic polyester film and is formed of a crosslinked polymer of (a) alkoxysilane having a functional group selected from the group consisting of an epoxy group, vinyl group and mercaptoalkyl group and (b) alkoxysilane having an amino group; a production method thereof; and a release film.
摘要翻译：一种硅氧烷粘合膜，其包含（A）双轴取向芳族聚酯膜，和（B）交联底漆层，其存在于所述芳族聚酯膜的至少一个表面上，并且由（a）烷氧基硅烷的交联聚合物形成，所述交联聚合物具有选自环氧基，乙烯基和巯基烷基的官能团和（b）具有氨基的烷氧基硅烷; 其制造方法; 和脱模膜。

78. 发明授权

US6078242A Line filter 有权
标题翻译：线路滤波器
公开(公告)号：US6078242A
公开(公告)日：2000-06-20
申请号：US340243
申请日：1999-07-01
申请人： Hiroshi Tomita , Toshinori Oda , Hirotaka Ishikawa
发明人： Hiroshi Tomita , Toshinori Oda , Hirotaka Ishikawa
IPC分类号： H01F27/34 , H01F17/06 , H01F37/00 , H03H1/00 , H03H2/00 , H01F27/30 , H01F27/24
CPC分类号： H03H7/427 , H03H2001/005
摘要： A line filter capable of eliminating the common mode noise and the normal mode noise altogether. It comprises both the common mode noise elimination means and the normal mode noise elimination means. A central magnetic core 32 is provided in the middle flange 34 of bobbin 23. A through-window 36 is provided at a place facing the counterpart feet 27 of closed magnetic circuit core 28 so as a part of the central magnetic core 32 is exposed, but the central magnetic core 32 and the closed magnetic circuit core 28 are not making contact with each other.
摘要翻译：能够消除共模噪声和正常模式噪声的线路滤波器。它包括共模噪声消除装置和正常模式噪声消除装置。中心磁芯32设置在绕线管23的中间凸缘34中。在与闭合磁路芯28的配对脚27相对的位置处设有通孔36，以使中心磁芯32的一部分露出，但是中心磁芯32和闭合磁路芯28彼此不接触。

79. 发明授权

US6059887A Process for cleaning the interior of semiconductor substrate 失效
标题翻译：清洗半导体衬底内部的工艺
公开(公告)号：US6059887A
公开(公告)日：2000-05-09
申请号：US54511
申请日：1998-04-03
申请人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
发明人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
IPC分类号： H01L21/304 , H01L21/322 , C03C23/00
CPC分类号： H01L21/3221
摘要： A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.
摘要翻译：提供了清洗其中含有金属杂质的半导体衬底的内部的工艺。加热半导体衬底，其一侧或其两侧在高温下与金属或无机盐的熔体接触，使得熔体不与这些半导体反应，并且半导体不熔化。通过该处理，存在于基板内的杂质从基板中除去，其内部被清洁。

80. 发明授权

US6054373A Method of and apparatus for removing metallic impurities diffused in a semiconductor substrate 失效
标题翻译：用于去除在半导体衬底中扩散的金属杂质的方法和装置
公开(公告)号：US6054373A
公开(公告)日：2000-04-25
申请号：US6996
申请日：1998-01-14
申请人： Hiroshi Tomita , Hisashi Muraoka , Ryuji Takeda
发明人： Hiroshi Tomita , Hisashi Muraoka , Ryuji Takeda
IPC分类号： H01L21/304 , H01L21/00 , H01L21/322
CPC分类号： H01L21/67057 , H01L21/3221
摘要： A method of removing metallic impurities diffused in a semiconductor substrate, comprising, the semiconductor-substrate-heating step of heating a semiconductor substrate to at least 200.degree. C. or higher and promoting the release and rediffusion of metallic impurities diffused in the semiconductor substrate, and the metallic-impurity-removing step of dissolving the metallic impurities arrived at the surface of the semiconductor substrate with a chemical agent and removing them from the substrate.
摘要翻译：一种去除在半导体衬底中扩散的金属杂质的方法，包括将半导体衬底加热到至少200℃或更高并促进在半导体衬底中扩散的金属杂质的释放和再扩散的半导体衬底加热步骤，以及金属杂质去除步骤，用金属杂质去除步骤，用化学试剂将金属杂质溶解到半导体衬底的表面，并将其从衬底上除去。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式