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71. 发明授权

US08324704B2 Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same 有权
标题翻译：具有肖特基势垒二极管的碳化硅半导体器件及其制造方法
公开(公告)号：US08324704B2
公开(公告)日：2012-12-04
申请号：US12659853
申请日：2010-03-23
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Hirokazu Fujiwara , Masaki Konishi , Takashi Katsuno , Yukihiko Watanabe
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Hirokazu Fujiwara , Masaki Konishi , Takashi Katsuno , Yukihiko Watanabe
IPC分类号： H01L29/24 , H01L29/47 , H01L21/04
CPC分类号： H01L29/47 , H01L21/0465 , H01L21/0495 , H01L29/0615 , H01L29/0619 , H01L29/1608 , H01L29/6606 , H01L29/66143 , H01L29/872
摘要： A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.
摘要翻译：具有肖特基势垒二极管的碳化硅半导体器件包括第一导电型碳化硅衬底，在衬底的第一表面上的第一导电型碳化硅漂移层，与漂移层形成肖特基接触的肖特基电极和欧姆电极在基板的第二表面上。肖特基电极包括与漂移层直接接触的氧化物层。氧化物层由钼，钛，镍或这些元素中的至少两种的合金的氧化物制成。

72. 发明授权

US08318878B2 Benzoxazine-containing formulations polymerizable/curable at low temperature 有权
标题翻译：含有苯并恶嗪的制剂在低温下可聚合/固化
公开(公告)号：US08318878B2
公开(公告)日：2012-11-27
申请号：US12442298
申请日：2007-09-18
申请人： Atsushi Sudo , Takeshi Endo , Andreas Taden , Rainer Schönfeld , Thomas Huver
发明人： Atsushi Sudo , Takeshi Endo , Andreas Taden , Rainer Schönfeld , Thomas Huver
IPC分类号： C08F26/06 , C08J3/20
CPC分类号： H01L23/293 , C08F10/00 , C08G61/122 , C08G73/02 , H01L2924/0002 , H01L2924/12044 , C08F4/74 , C08F4/80 , H01L2924/00
摘要： The present invention relates to a catalyst, which is an organic component with electron withdrawing substituents and to compositions with such catalyst and at least one benzoxazine component, and the use of such compositions in adhesives, sealants and coatings.
摘要翻译：本发明涉及一种催化剂，其是具有吸电子取代基的有机组分和具有这种催化剂和至少一种苯并恶嗪组分的组合物，以及这些组合物在粘合剂，密封剂和涂料中的用途。

73. 发明授权

US08249311B2 Alcohol test system, alcohol test device, alcohol test method, and program 失效
标题翻译：酒精测试系统，酒精测试仪器，酒精测试方法和程序
公开(公告)号：US08249311B2
公开(公告)日：2012-08-21
申请号：US11971746
申请日：2008-01-09
申请人： Takeshi Endo , Seiichiro Mori
发明人： Takeshi Endo , Seiichiro Mori
IPC分类号： G06K9/00
CPC分类号： G01N33/4972
摘要： In order to provide an alcohol test device which can keep evidence that an identical person has been surely tested in an alcohol test, the alcohol test device includes an alcohol test unit which measures alcohol concentration from breath exhaled by a subject; a drinking determination unit which determines whether or not the subject is in a drunken state on the basis of a measurement result of the alcohol test unit; a camera unit which photographs a face image of the subject when the breath is exhaled into the alcohol test unit; a face authentication identical person determination unit which compares a face image photographed by the camera unit with a face image of the subject himself (herself) preliminarily photographed, and performs identical person authentication which determines whether or not the subject is the identical person; a result control unit which edits combining a result of identical person authentication by the face authentication identical person determination unit and a result of drinking determination by the drinking determination unit; and a result display unit which displays a result edited by the result control unit.
摘要翻译：为了提供一种酒精测试装置，其可以在酒精测试中证明相同的人已被确定地进行测试，该酒精测试装置包括一个酒精测试单元，其测量受试者呼出的呼吸中的酒精浓度; 饮酒确定单元，其基于所述酒精测试单元的测量结果来确定所述对象是否处于醉酒状态; 当呼吸呼出到酒精测试单元中时照相对象的脸部图像的相机单元; 面部认证相同人确定单元，其将由相机单元拍摄的面部图像与被摄体的自己的脸部图像进行比较，并执行确定对象是否是相同人物的相同人物认证; 结果控制单元，其通过面部认证相同人确定单元编辑相同人认证的结果和由饮酒确定单元进行饮酒确定的结果; 以及显示由结果控制单元编辑的结果的结果显示单元。

74. 发明申请

US20120159206A1 INFORMATION PROCESSOR 审中-公开
标题翻译：信息处理器
公开(公告)号：US20120159206A1
公开(公告)日：2012-06-21
申请号：US13314656
申请日：2011-12-08
申请人： Takeshi Endo , Daisuke Kawamoto
发明人： Takeshi Endo , Daisuke Kawamoto
IPC分类号： G06F1/26
CPC分类号： G06F1/30 , G06F1/1635 , H01M2/1022 , H01M2/20 , H01M10/46
摘要： Disclosed herein is an information processor, including: a detecting portion detecting connection between a battery pack and an information processor main body, and outputting connection information to the battery pack; a power source circuit to which an electric power is supplied from the battery pack acquiring the connection information; a manipulation portion adapted to be manipulated by a user; and a stopping portion outputting un-connection information to the battery pack when the manipulation portion is manipulated, and stopping output of the connection information even when the connection is detected by the detecting portion.
摘要翻译：这里公开了一种信息处理器，包括：检测部分，检测电池组和信息处理器主体之间的连接，并将连接信息输出到电池组; 电源电路，从所述电池组提供从其获取所述连接信息的电力; 适于由用户操纵的操纵部分; 以及当所述操作部被操纵时，将未连接信息输出到所述电池组的停止部，以及即使当所述检测部检测到所述连接时，也停止所述连接信息的输出。

75. 发明授权

US08158719B2 Benzoxazine-formulations with reduced outgassing behaviour 失效
标题翻译：苯并恶嗪制剂具有降低的除气行为
公开(公告)号：US08158719B2
公开(公告)日：2012-04-17
申请号：US12621850
申请日：2009-11-19
申请人： Atsushi Sudo , Ryoichi Kudoh , Kazuya Uenishi , Takeshi Endo , Andreas Taden , Rainer Schönfeld , Thomas Huver
发明人： Atsushi Sudo , Ryoichi Kudoh , Kazuya Uenishi , Takeshi Endo , Andreas Taden , Rainer Schönfeld , Thomas Huver
IPC分类号： C08G73/10
CPC分类号： C08G73/02 , C07D265/16 , H01L23/293 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Polymerizable combinations, comprising at least one first component selected from the group of benzoxazine monomers and at least one second component selected from the group of aromatic esters are described. Further on the use of aromatic esters as additives to benzoxazine monomers as well as methods of coating a device by heating the above mentioned combination, and a device, coated by that way is explained.
摘要翻译：描述了包含至少一种选自苯并恶嗪单体和至少一种选自芳族酯的第二组分的第一组分的可聚合组合。此外，关于使用芳族酯作为苯并恶嗪单体的添加剂以及通过加热上述组合涂覆装置的方法以及通过这种方式涂覆的装置进行了说明。

76. 发明授权

US08133787B2 SiC semiconductor device and method for manufacturing the same 有权
标题翻译： SiC半导体器件及其制造方法
公开(公告)号：US08133787B2
公开(公告)日：2012-03-13
申请号：US12071718
申请日：2008-02-26
申请人： Takeshi Endo
发明人： Takeshi Endo
IPC分类号： H01L21/8234
CPC分类号： H01L29/66068 , H01L21/049 , H01L29/045 , H01L29/0847 , H01L29/1083 , H01L29/1087 , H01L29/1608 , H01L29/51 , H01L29/78 , H01L29/7828 , H01L29/7838 , Y10S438/931
摘要： A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the current path, respectively; and a gate on the channel region through the gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 4.7×1020 cm−3. The interface provides a channel surface having a (000-1)-orientation surface.
摘要翻译：具有MOS结构的SiC半导体器件包括：SiC衬底; 提供电流路径的信道区域; 分别在电流路径的上游侧和下游侧的第一和第二杂质区域; 以及通过栅极绝缘膜的沟道区上的栅极。用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于4.7×1020cm-3。界面提供具有（000-1）取向表面的通道表面。

77. 发明授权

US07893274B2 Process for producing amino acid N-carboxyanhydride 有权
标题翻译：制备氨基酸N-羧酸酐的方法
公开(公告)号：US07893274B2
公开(公告)日：2011-02-22
申请号：US11457035
申请日：2006-07-12
申请人： Yukihiro Fujita , Takeshi Endo , Haruo Nishida , Atsushi Sudo
发明人： Yukihiro Fujita , Takeshi Endo , Haruo Nishida , Atsushi Sudo
IPC分类号： C07D263/00
CPC分类号： C07C269/04 , C07C271/44 , C07C271/54
摘要： The present invention provides a process for producing an amino acid N-carboxyanhydride, which comprises reacting an amino acid or a derivative thereof with a compound represented by the following formula (1): wherein R1 and R2 represent the same or different electron-withdrawing substituents and each independently are an optionally substituted acyl group, an optionally substituted alkyloxycarbonyl group, an optionally substituted perfluoroalkyl group, an optionally substituted perchloroalkyl group, a cyano group, a halogen atom, or a nitro group; and a and b are the same or different and each are an integer of 1-5.
摘要翻译：本发明提供了一种制备氨基酸N-羧酸酐的方法，其包括使氨基酸或其衍生物与下式（1）表示的化合物反应：其中R 1和R 2表示相同或不同的吸电子取代基并且各自独立地为任选取代的酰基，任选取代的烷氧基羰基，任选取代的全氟烷基，任选取代的全氯烷基，氰基，卤素原子或硝基; a和b相同或不同，为1-5的整数。

78. 发明授权

US07825449B2 Silicon carbide semiconductor device and related manufacturing method 有权
标题翻译：碳化硅半导体器件及相关制造方法
公开(公告)号：US07825449B2
公开(公告)日：2010-11-02
申请号：US12289624
申请日：2008-10-30
申请人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
发明人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
IPC分类号： H01L29/94 , H01L21/04 , H01L29/68
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/47 , H01L29/66068 , H01L29/7391 , H01L29/7397 , H01L29/7828
摘要： An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer to extend into the n−-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.
摘要翻译：公开了一种SiC半导体器件和相关制造方法，其具有设置有等于或大于沟槽深度形成的p +型深层的结构，以在p +型之间的PN结处引起耗尽层深层和n型漂移层以非常长的长度延伸到n型漂移层中，使得由于漏极电压引起的不利影响导致的高电压难以进入栅极氧化膜。这导致使栅极氧化膜中的电场浓度最小化的能力，即在沟槽的底壁处的栅极氧化膜处发生的电场浓度。

79. 发明授权

US07808003B2 Silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件
公开(公告)号：US07808003B2
公开(公告)日：2010-10-05
申请号：US12285351
申请日：2008-10-02
申请人： Takeshi Endo , Eiichi Okuno
发明人： Takeshi Endo , Eiichi Okuno
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/7802 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0692 , H01L29/0847 , H01L29/0878 , H01L29/1608 , H01L29/45 , H01L29/6606 , H01L29/66068 , H01L29/7395 , H01L29/7397 , H01L29/7813 , H01L29/7828 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.
摘要翻译：公开了一种碳化硅半导体器件。碳化硅半导体器件包括衬底; 具有第一导电类型且位于所述基板的第一表面上的漂移层; 和垂直型半导体元件。垂直型半导体元件包括：具有第二导电类型的杂质层，并且位于漂移层的表面部分中; 以及位于漂移层中的离开杂质层的第一导电类型区域，位于比杂质层更靠近衬底的位置，并且具有高于漂移层的杂质浓度。

80. 发明申请

US20100110865A1 Optical Information Recording and Reproducing Apparatus, and Cartridge 有权
标题翻译：光学信息记录和再现设备和墨盒
公开(公告)号：US20100110865A1
公开(公告)日：2010-05-06
申请号：US12606705
申请日：2009-10-27
申请人： Takeshi Endo , Hiroshi Hatano , Tetsuya Noda , Kazutaka Noguchi , Hiroyuki Matsuda , Shigeru Yamasaki
发明人： Takeshi Endo , Hiroshi Hatano , Tetsuya Noda , Kazutaka Noguchi , Hiroyuki Matsuda , Shigeru Yamasaki
IPC分类号： G11B7/135 , G11B23/03
CPC分类号： G11B7/083 , G11B7/0065 , G11B7/082 , G11B7/1362
摘要： An optical information recording and reproducing apparatus relating to the invention employs a two-beam interference method. In the optical information recording and reproducing apparatus, a moving device moves an information recording medium between a recording and reproducing position and a retracting position, and a mirror moves together with the information recording medium. When the information recording medium moves to the recording and reproducing position, the mirror moves to a position which is displaced from the at least one of the reference beam and the information beam. When the information recording medium moves to the retracting position, the mirror moves to a position where the mirror can reflect the at least one of the reference beam and the information beam toward a detector for detecting a deviation of the at least one of the reference beam and the information beam.
摘要翻译：本发明的光信息记录再现装置采用双光束干涉法。在光学信息记录和再现装置中，移动装置在记录和再现位置与缩回位置之间移动信息记录介质，并且反射镜与信息记录介质一起移动。当信息记录介质移动到记录和再现位置时，反射镜移动到从参考光束和信息光束中的至少一个偏移的位置。当信息记录介质移动到缩回位置时，反射镜移动到反射镜可以将参考光束和信息光束中的至少一个反射到检测器的位置，用于检测参考光束中的至少一个的偏差和信息光束。

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