会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 71. 发明授权
    • Multi-tier inventory visibility
    • 多层次库存可见性
    • US09292825B2
    • 2016-03-22
    • US11428607
    • 2006-07-05
    • Victor ChanMark W. HubbardAalim LakhaniDaisy TanFen Wang
    • Victor ChanMark W. HubbardAalim LakhaniDaisy TanFen Wang
    • G06Q10/00G06Q10/08
    • G06Q10/087
    • Embodiments of the present invention address deficiencies of the art in respect to inventory management and provide a method, system and computer program product for multi-tier inventory visibility. In one embodiment of the invention, a multi-tier inventory management data processing system can include an inventory management system coupled to one or more e-commerce applications over an enterprise bus, and multiple different instances of a tier inventory component, each of the instances corresponding to a local inventory cache. Each instance can include program code enabled to manage the local inventory cache and an inventory management API exposing inventory operations on the local inventory cache to other instances of the tier inventory component.
    • 本发明的实施例解决了库存管理方面的缺陷,并且提供了用于多层库存可见性的方法,系统和计算机程序产品。 在本发明的一个实施例中,多层次库存管理数据处理系统可以包括通过企业总线耦合到一个或多个电子商务应用的库存管理系统,以及层次库存组件的多个不同实例,每个实例 对应于本地库存缓存。 每个实例都可以包括启用以管理本地库存高速缓存的程序代码,以及库存管理API,将本地库存缓存上的库存操作暴露给层级库存组件的其他实例。
    • 72. 发明授权
    • Adaptive query expression builder for an on-demand data service
    • 用于按需数据服务的自适应查询表达式构建器
    • US09053207B2
    • 2015-06-09
    • US11672736
    • 2007-02-08
    • Ramiah K. TinStanislav BliakhmanVictor ChanRoss McKegneyJeffrey A. Shiner
    • Ramiah K. TinStanislav BliakhmanVictor ChanRoss McKegneyJeffrey A. Shiner
    • G06F7/00G06F17/30
    • G06F17/30935G06F17/30448
    • Embodiments of the present invention address deficiencies of the art in respect to database query management and execution and provide a novel and non-obvious method, system and apparatus for processing an adaptive query expression in an on-demand data service. In one embodiment of the invention, an adaptive query handling method can include receiving an initial query in a database driven application, parsing the initial query to identify a query expression key, matching the query expression key to an adaptive query expression, and transforming the adaptive query expression to a final query expression through a replacement of annotations in the adaptive query expression with static expressions conforming to a query language for the final query expression. Thereafter, the final query expression can be applied to a database subsystem for the database driven application.
    • 本发明的实施例解决了关于数据库查询管理和执行的本领域的缺陷,并且提供了一种用于在按需数据服务中处理自适应查询表达式的新颖且非显而易见的方法,系统和装置。 在本发明的一个实施例中,自适应查询处理方法可以包括在数据库驱动的应用中接收初始查询,解析初始查询以识别查询表达式密钥,将查询表达式密钥与自适应查询表达式匹配, 通过在自适应查询表达式中替换符合最终查询表达式的查询语言的静态表达式的注释来将查询表达式转换为最终查询表达式。 此后,最终查询表达式可以应用于数据库驱动应用程序的数据库子系统。
    • 77. 发明申请
    • SEMICONDUCTOR EMBEDDED RESISTOR GENERATION
    • 半导体嵌入式电阻发生器
    • US20100197106A1
    • 2010-08-05
    • US12364764
    • 2009-02-03
    • Choongryul RyouSeunghwan LeeJun YuanVictor ChanManfred EllerNam Sung KimNarasimhulu KanikeSrikanth Balaji Samavedam
    • Choongryul RyouSeunghwan LeeJun YuanVictor ChanManfred EllerNam Sung KimNarasimhulu KanikeSrikanth Balaji Samavedam
    • H01L21/76G06F17/50
    • H01L27/0629H01L23/5256H01L28/20H01L2924/0002H01L2924/00
    • A method for generating an embedded resistor in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including forming a shallow trench isolation (STI) region in a substrate; forming a pad oxide on the STI region and substrate; depositing a silicon layer on the pad oxide; forming a photo-resist mask on a portion of the silicon layer disposed substantially above the STI region.; etching the silicon layer to yield a polyconductor (PC) disposed substantially above the STI region; oxidizing the PC; depositing at least one of an oxide material or a metal gate material on the oxidized surface; depositing a silicon layer on the at least one oxide material or metal gate material; depositing additional silicon on a portion of the silicon layer disposed substantially above the STI region; patterning a transistor gate with a photo-resist mask disposed on another portion of the silicon layer disposed substantially away from the STI region; and etching the silicon layer to yield at least one transistor structure disposed substantially away from the STI region and at least one resistor structure disposed substantially above the STI region.
    • 提供了一种用于在半导体器件和相关的计算机可读存储介质中产生嵌入式电阻器的方法,所述介质的方法和程序步骤包括在衬底中形成浅沟槽隔离(STI)区域; 在STI区和衬底上形成衬垫氧化物; 在衬垫氧化物上沉积硅层; 在基本上位于STI区域上方的硅层的一部分上形成光刻胶掩模; 蚀刻硅层以产生基本上位于STI区域上方的多导体(PC); 氧化PC; 在氧化表面上沉积氧化物材料或金属栅极材料中的至少一种; 在所述至少一种氧化物材料或金属栅极材料上沉积硅层; 在基本上位于STI区域上方的硅层的一部分上沉积附加的硅; 图案化具有设置在基本上远离STI区域设置在硅层的另一部分上的光致抗蚀剂掩模的晶体管栅极; 并且蚀刻所述硅层以产生基本上远离所述STI区域布置的至少一个晶体管结构以及基本上设置在所述STI区域上的至少一个电阻器结构。