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71. 发明申请

US20110240123A1 Photovoltaic Cells With Improved Electrical Contact 审中-公开
标题翻译：具有改进的电接触的光伏电池
公开(公告)号：US20110240123A1
公开(公告)日：2011-10-06
申请号：US12751516
申请日：2010-03-31
申请人： Hao LIN , Wei Xia , Hsiang Ning Wu , Ching Wan TANG
发明人： Hao LIN , Wei Xia , Hsiang Ning Wu , Ching Wan TANG
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , H01L31/0296 , H01L31/03925 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： A photovoltaic cell comprising a metal oxide back buffer layer. Improved n-CdS/p-CdTe heterojunction photovoltaic cells comprising a metal oxide buffer layer for making low-resistance electrical contact to the p-type CdTe layer. The back buffer layer comprises metal oxides having a high work function.
摘要翻译：一种包含金属氧化物背缓冲层的光伏电池。包括用于与p型CdTe层进行低电阻电接触的金属氧化物缓冲层的改进的n-CdS / p-CdTe异质结光伏电池。后缓冲层包括具有高功函数的金属氧化物。

72. 发明申请

US20100153410A1 DISTRIBUTING AND SHARING CONTENT IN A NETWORK 有权
标题翻译：网络中的分布和共享内容
公开(公告)号：US20100153410A1
公开(公告)日：2010-06-17
申请号：US12334889
申请日：2008-12-15
申请人： Zhiying Jin , Jack Jianxiu Hao , Fang Zhu , Wei Xia , Guanrao Chen , Alex Sakharov , Gaurav D. Mehta
发明人： Zhiying Jin , Jack Jianxiu Hao , Fang Zhu , Wei Xia , Guanrao Chen , Alex Sakharov , Gaurav D. Mehta
IPC分类号： G06F7/06 , G06F17/30
CPC分类号： G06F17/30035 , G06F17/30569
摘要： A method may include receiving, from a first user device associated with a user profile, a first request for a media file and streaming the media file over a network to the first user device in a first format appropriate for the first device. The method may also include stopping the streaming of the media file and associating a stop time with the stopping, wherein the stop time indicates a position in the media file and receiving, from a second user device different from the first user device, a second request for the media file, the second user device being associated with the user profile. The method may also include streaming, starting at the stop time, the media file over the network to the second user device in a second format appropriate for the second device and different than the first format.
摘要翻译：方法可以包括从与用户简档相关联的第一用户设备接收对媒体文件的第一请求，并且以适合于第一设备的第一格式通过网络将媒体文件流式传输到第一用户设备。该方法还可以包括停止媒体文件的流传输并将停止时间与停止相关联，其中停止时间指示媒体文件中的位置，并从不同于第一用户设备的第二用户设备接收第二请求对于媒体文件，第二用户设备与用户简档相关联。该方法还可以包括以适合于第二设备并且不同于第一格式的第二格式的从停止时间开始将网络上的媒体文件流传输到第二用户设备。

73. 发明申请

US20100052513A1 SILICATE BASE LUMINESCENT MATERIALS HAVING MULTIPLE EMISSION PEAKS, PROCESSES FOR PREPARING THE SAME AND LIGHT EMITTING DEVICES USING THE SAME 有权
标题翻译：具有多个发射峰的硅酸盐基发光材料，其制备方法和使用该发光峰的发光装置
公开(公告)号：US20100052513A1
公开(公告)日：2010-03-04
申请号：US12377491
申请日：2007-08-15
申请人： Wei Xia , Yi Xin , Daqiang Hu , Zhiguo Xiao
发明人： Wei Xia , Yi Xin , Daqiang Hu , Zhiguo Xiao
IPC分类号： H01L33/00 , C09K11/61 , C09K11/79
CPC分类号： C09K11/7734 , C09K11/7792 , H01L33/483 , H01L33/502 , H01L33/507 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A silicate luminescent material excitable by an excitation light source having emissions in UV to blue light region, a process for producing the same, and a white light emitting device. The luminescent material has an emission spectrum with at least two peaks in a range of from 370 to 760 nm, and has a general chemical composition formula of aAO.bA′O.cSiO2:xEu.yLn.zM.δN, wherein A is selected from the group consisting of Sr, Ca, Ba, and combinations thereof; A′ is selected from the group consisting of Mg, Zn, and combinations thereof; Ln is selected from the group consisting of Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Bi, Sm, Sn, Y, Lu, Ga, Sb, Tb, Mn, Pb and combinations thereof; M is one or a combination of halogen ions; N is selected from the group consisting of Li+, Na+, K+, Ag+, and combinations thereof; and a, b, c, x, y, z, and δ are molar coefficients.
摘要翻译：由具有紫外至蓝光区域的发射的激发光源可激发的硅酸盐发光材料，其制造方法和白色发光装置。发光材料具有在370至760nm范围内具有至少两个峰的发射光谱，并具有一般的化学组成分子式为：aA.bA'O.cSiO2：xEu.yLn.zM.δN，其中选择A 由Sr，Ca，Ba及其组合组成的组; A'选自Mg，Zn及其组合; Ln选自Nd，Dy，Ho，Tm，La，Ce，Er，Pr，Bi，Sm，Sn，Y，Lu，Ga，Sb，Tb，Mn，Pb及其组合; M是卤素离子之一或组合; N选自Li +，Na +，K +，Ag +及其组合; 和a，b，c，x，y，z和δ是摩尔系数。

74. 发明授权

US07638111B2 Catalytic etching of carbon fibers 失效
标题翻译：碳纤维的催化蚀刻
公开(公告)号：US07638111B2
公开(公告)日：2009-12-29
申请号：US12278592
申请日：2007-02-13
申请人： Martin Muhler , Wei Xia
发明人： Martin Muhler , Wei Xia
IPC分类号： D01F9/12
CPC分类号： D06M11/05 , D06M10/06 , D06M11/34 , D06M2101/40
摘要： The present invention relates to a method for etching carbon fibers, in particular carbon nanofibers and to the carbon nanofibers obtainable by this method, and the use thereof.
摘要翻译：本发明涉及一种用于蚀刻碳纤维，特别是碳纳米纤维的方法和可通过该方法获得的碳纳米纤维及其用途。

75. 发明申请

US20080031797A1 SILICATE PHOSPHOR AND ITS MANUFACTURE METHOD AS WELL AS LIGHT-EMITTING DEVICE USING THE SAME 有权
标题翻译：硅酸盐及其制造方法作为使用其的发光装置
公开(公告)号：US20080031797A1
公开(公告)日：2008-02-07
申请号：US11754432
申请日：2007-05-29
申请人： Wei Xia , Jing Xu , Guangxu Lin , Xifeng Wang , Zhiguo Xiao
发明人： Wei Xia , Jing Xu , Guangxu Lin , Xifeng Wang , Zhiguo Xiao
IPC分类号： C01F17/00
CPC分类号： C09K11/774 , C09K11/7734 , C09K11/7792 , C09K11/7796 , C09K11/7797 , Y02B20/181
摘要： The invention relates to an ultraviolet to green light region silicate phosphor capable of being excited by radiation light source and its manufacturing method, particularly to white and multicolor systems light-emitting device. The material has luminous color in the range from blue to red color system. The essential composition of the phosphor is aMO.bM′O.SiO2.cR:xEu.yLn.zLv.δLm, wherein M is an element or a combination of elements selected from the group consisting of Sr, Ca, Ba and Zn; M′ is an element or a combination of elements selected from the group consisting of Mg, Cd and Be; R is one or two of B2O3 and P2O5; Ln is an element or a combination of elements selected from the group consisting of Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Bi, Sm, Sn, Y, Lu, Ga, Sb, Tb, Mn and Pb; Lv is an element or a combination of elements selected from the group consisting of Cl, F, Br, I and S; Lm is an element or a combination of elements selected from the group consisting of Li, Na and K
摘要翻译：本发明涉及能够被辐射光源激发的紫外至绿光区域硅酸盐荧光体及其制造方法，特别涉及白色和多色系统的发光装置。该材料具有从蓝色到红色系统范围内的发光颜色。荧光体的基本组成是M 1，M 2 SiO 2，cR：xEu.yLn.zLv.deltaLm，其中M是元素或选自Sr ，Ca，Ba和Zn; M'是选自Mg，Cd和Be的元素或元素的组合; R是B 2 O 3和P 2 O 5 5中的一个或两个; Ln是选自Nd，Dy，Ho，Tm，La，Ce，Er，Pr，Bi，Sm，Sn，Y，Lu，Ga，Sb，Tb，Mn和Pb中的元素或元素的组合 ; Lv是选自Cl，F，Br，I和S的元素或元素的组合; Lm是选自Li，Na和K的元素或元素的组合

76. 发明授权

US09405887B2 Limiting concurrent viewing sessions on multiple user devices 有权
标题翻译：限制多个用户设备上的并发查看会话
公开(公告)号：US09405887B2
公开(公告)日：2016-08-02
申请号：US13314233
申请日：2011-12-08
申请人： Fenglin Yin , Jack Jianxiu Hao , Zhiying Jin , Wei Xia
发明人： Fenglin Yin , Jack Jianxiu Hao , Zhiying Jin , Wei Xia
IPC分类号： G06F21/00 , G06F21/10
CPC分类号： G06F21/10 , G06F21/105
摘要： System devices include network interfaces to communicate with user devices associated with a user, memories for storing instructions to be executed by processors, and the processors. The processors are configured to execute the instructions to receive, from a first user device, among the user devices, a request for content; initiate an upload of the requested content to the first user device in response to the request; receive a request for a license key from the first user device in response to the initiation of the upload; determine whether a number of concurrent sessions with the user devices exceeds a maximum number; and send the license key to the first user device when the processors determine that the number of concurrent sessions does not exceed the maximum number.
摘要翻译：系统设备包括用于与与用户相关联的用户设备通信的网络接口，用于存储要由处理器执行的指令的存储器和处理器。处理器被配置为执行从第一用户设备在用户设备之间接收对内容的请求的指令; 响应于该请求，开始将所请求的内容上传到第一用户设备; 响应于上传的开始，从第一用户设备接收许可证密钥的请求; 确定与用户设备的并发会话数是否超过最大数量; 并且当处理器确定并发会话的数量不超过最大数量时，将许可证密钥发送到第一用户设备。

77. 发明授权

US09307042B2 Orchestration server for video distribution network 有权
标题翻译：视频分配网络编排服务器
公开(公告)号：US09307042B2
公开(公告)日：2016-04-05
申请号：US13313051
申请日：2011-12-07
申请人： Shuai Wu , Jack Jianxiu Hao , Wei Xia , Zhiying Jin
发明人： Shuai Wu , Jack Jianxiu Hao , Wei Xia , Zhiying Jin
IPC分类号： G06F15/16 , H04L29/08 , H04L29/06 , H04N21/235 , H04N21/254 , H04N21/2543 , H04N21/643
CPC分类号： H04L67/2823 , H04L65/4084 , H04L67/2838 , H04L67/303 , H04N21/2358 , H04N21/2541 , H04N21/2543 , H04N21/64322
摘要： A computing device receives, from a user device, a data call, and forwards the data call to a backend network device. The computing device receives, from the backend network device, a response to the data call in a first format. The computing device identifies a type of the user device and converts the response from the first format into a second format to create a reformatted response. The reformatted response addresses compatibility issues or simplifies processing by the user device. The computing device sends the reformatted response to the user device.
摘要翻译：计算设备从用户设备接收数据呼叫，并将数据呼叫转发到后端网络设备。计算设备从后端网络设备以第一格式接收对数据呼叫的响应。计算设备识别用户设备的类型，并将来自第一格式的响应转换成第二格式以创建重新格式化的响应。重新格式化的响应解决了兼容性问题或简化了用户设备的处理。计算设备将重新格式化的响应发送给用户设备。

78. 发明授权

US09276004B2 ROM arrays having memory cell transistors programmed using metal gates 有权
标题翻译： ROM阵列，其具有使用金属栅极编程的存储单元晶体管
公开(公告)号：US09276004B2
公开(公告)日：2016-03-01
申请号：US13436621
申请日：2012-03-30
申请人： Wei Xia
发明人： Wei Xia
IPC分类号： H01L21/70 , H01L27/112 , H01L21/28 , H01L29/49 , H01L29/51 , H01L29/66
CPC分类号： H01L27/11233 , H01L21/28079 , H01L21/28088 , H01L27/11293 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： According to one exemplary implementation, an integrated circuit (IC) includes a first memory cell transistor of a read only memory (ROM) array, the first memory cell transistor including a first metal gate of a first work function and having a first threshold voltage. The IC also includes a second memory cell transistor of the ROM array, the second memory cell transistor including a second metal gate of a second work function and having a second threshold voltage. The first memory cell transistor and the second memory cell transistor can be of a first conductivity type. Furthermore, the first memory cell transistor can include a first high-k gate dielectric and the second memory cell transistor can include a second high-k gate dielectric.
摘要翻译：根据一个示例性实施方式，集成电路（IC）包括只读存储器（ROM）阵列的第一存储单元晶体管，所述第一存储单元晶体管包括第一功函数的第一金属栅极并具有第一阈值电压。 IC还包括ROM阵列的第二存储单元晶体管，第二存储单元晶体管包括第二功函数的第二金属栅极并具有第二阈值电压。第一存储单元晶体管和第二存储单元晶体管可以是第一导电类型。此外，第一存储单元晶体管可以包括第一高k栅极电介质，并且第二存储单元晶体管可以包括第二高k栅极电介质。

79. 发明申请

US20130256119A1 METHOD FOR APPLYING POWER TO TARGET MATERIAL, POWER SUPPLY FOR TARGET MATERIAL, AND SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：将电力应用于目标材料的方法，目标材料的电源和半导体处理装置
公开(公告)号：US20130256119A1
公开(公告)日：2013-10-03
申请号：US13378936
申请日：2010-12-17
申请人： Bai Yang , Wei Xia
发明人： Bai Yang , Wei Xia
IPC分类号： C23C14/34
CPC分类号： C23C14/3485 , C23C14/35 , H01J37/3408 , H01J37/3467
摘要： A method for applying power to target material in a magnetron sputtering process is provided. The method includes: 10) connecting a main power supply and a maintaining power supply to the target material (2) respectively; 20) applying a particular main power in the form of pulses to the target material (2) by the main power supply; applying a particular maintaining power which is smaller than the main power to the target material (2) by the maintaining power supply at least during the pulse interval time (t2) of the main power supply, so as to maintain a glow discharge procedure of the sputtering process during the purse interval time (t2) of the main power supply. The method for applying power to target material can obviously enhance the metal ionization rate while the process stability and controllability are guaranteed. A power supply for target material (8) which includes a main power module (81) and a maintaining power module (82), and a semiconductor processing apparatus using the method for applying power to target material or the power supply for target material are also provided.
摘要翻译：提供了一种在磁控溅射工艺中对靶材施加功率的方法。该方法包括：10）分别将主电源和维持电源连接到目标材料（2）; 20）通过主电源向目标材料（2）施加脉冲形式的特定主电源; 至少在主电源的脉冲间隔时间（t2）期间，通过保持电源向目标材料（2）施加小于主功率的特定维持功率，以保持主电源的辉光放电过程在主电源的钱包间隔时间（t2）期间进行溅射处理。对目标材料施加电力的方法可以显着提高金属电离率，同时保证工艺的稳定性和可控性。包括主电源模块（81）和保持功率模块（82）的目标材料（8）的电源，以及使用将目标材料或目标材料的电源供电的方法的半导体处理装置也是提供。

80. 发明申请

US20130248961A1 Embedded Flash Memory 有权
标题翻译：嵌入式闪存
公开(公告)号：US20130248961A1
公开(公告)日：2013-09-26
申请号：US13425575
申请日：2012-03-21
申请人： Wei Xia
发明人： Wei Xia
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/11543 , H01L21/28273 , H01L29/42324 , H01L29/7883
摘要： An embedded flash memory cell and a corresponding method for fabricating the embedded flash memory cell are disclosed. In some embodiments, the flash memory cell comprises a floating gate that has been formed using a metal gate and local interconnect metal. For some embodiments, the embedded flash memory can be fabricated with little-to-no additional processes than what one would normally employ in fabricating a metal-oxide semiconductor field-effect transistor (MOSFET).
摘要翻译：公开了一种用于制造嵌入式闪存单元的嵌入式闪存单元和相应的方法。在一些实施例中，快闪存储器单元包括已经使用金属栅极和局部互连金属形成的浮动栅极。对于一些实施例，嵌入式闪存可以与制造金属氧化物半导体场效应晶体管（MOSFET）时通常采用的附加工艺相比制造的少。

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