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    • 74. 发明授权
    • Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    • 电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
    • US07513608B2
    • 2009-04-07
    • US11338774
    • 2006-01-25
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • B41J2/045
    • B41J2/14233H01L41/0973H01L41/316
    • The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
    • 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, u =(Cc / Ca)×(Wa / Wc)(1)中的绝对值大于2的实数:<?in-line-formula description =“In-line formula”end =“lead” <?in-line-formula description =“In-line formula”end =“tail”?>其中,Cc是平面外的电介质膜的(001')面的峰值的计数数 X射线衍射测量(这里,l'是选择的自然数,使得Cc变为最大); Ca是In平面X射线衍射测定中的电介质膜的(h'00)面的峰值的计数数(这里,h'是选择为Cc变为最大的自然数); Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的(001')面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的(h'00)面的峰值的半值宽度。
    • 75. 发明申请
    • Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    • 电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
    • US20060176342A1
    • 2006-08-10
    • US11338774
    • 2006-01-25
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • B41J2/045
    • B41J2/14233H01L41/0973H01L41/316
    • The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
    • 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:<?in-line-formula description =“In-line Formulas”end =“lead”?> u =(C C 其中C是在平面外X射线衍射测量中电介质膜的(001')面的峰的计数(这里,l'是 选择的自然数使得C 变得最大); 在平面X射线衍射测量中,电介质膜的(h'00)面的峰值的计数数(这里,h'是选择的自然数,使得C 变为最大); WC是在平面外的摇摆曲线X射线衍射测定中的电介质膜的(001')面的峰值的半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的(h'00)面的峰值的半值宽度。
    • 76. 发明授权
    • Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    • 电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
    • US07059711B2
    • 2006-06-13
    • US10769765
    • 2004-02-03
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • B41J2/045
    • B41J2/14233H01L41/0973H01L41/316
    • The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
    • 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:<?in-line-formula description =“In-line Formulas”end =“lead”?> u =(C C 其中,C是在平面外X射线衍射测量中电介质膜的(001)面的峰值的计数(这里,l'是 选择的自然数使得C 变得最大); 在平面X射线衍射测量中,电介质膜的(h'00)面的峰值的计数数(这里,h'是选择的自然数,使得C 变为最大); 在平面外的摇摆曲线X射线衍射测量中,电介质薄膜的(001')面的峰值的半值宽度是半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的(h'00)面的峰值的半值宽度。