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    • 72. 发明授权
    • Method of fabricating bipolar transistor having high speed and MOS
transistor having small size
    • 制造具有高速度的双极晶体管的方法和具有小尺寸的MOS晶体管
    • US5506156A
    • 1996-04-09
    • US279087
    • 1994-07-22
    • Atsuo WatanabeKazushige SatoTakahiro NaganoShoji ShukuriTakashi Nishida
    • Atsuo WatanabeKazushige SatoTakahiro NaganoShoji ShukuriTakashi Nishida
    • H01L29/73H01L21/331H01L21/8249H01L27/06H01L29/732H01L21/265
    • H01L21/8249Y10S148/009
    • A semiconductor device includes a plurality of semiconductor regions of a first conductive type and a plurality of semiconductor regions of a second conductive type. AMOS transistor having a channel of the second conductive type is formed in the semiconductor regions of the first conductive type, and a bipolar transistor and a MOS transistor having a channel of the first conductive type are formed in the semiconductor regions of the second conductive type. Each of the semiconductor regions of the first conductive type is made up of a semiconductor layer where the impurity concentration decreases with the depth from the surface thereof, a first buried layer of the first conductive type which is formed in a semiconductor substrate and where the impurity concentration distribution in the direction of thickness has a single peak value, and a second buried layer of the first conductive type which is formed between the semiconductor layer and the first buried layer and where the impurity concentration distribution in the direction of thickness has a single peak value. The first and second buried layers are formed by the ion implantation method, after an epitaxial growth process and a field oxidation process have been completed.
    • 半导体器件包括多个第一导电类型的半导体区域和第二导电类型的多个半导体区域。 具有第二导电类型的沟道的AMOS晶体管形成在第一导电类型的半导体区域中,并且在第二导电类型的半导体区域中形成具有第一导电类型的沟道的双极晶体管和MOS晶体管。 第一导电类型的半导体区域由半导体层构成,其中杂质浓度随着其表面的深度而减小,第一导电类型的第一掩埋层形成在半导体衬底中,并且杂质 在厚度方向上的浓度分布具有单个峰值,并且形成在半导体层和第一掩埋层之间的第一导电类型的第二掩埋层,并且其中厚度方向上的杂质浓度分布具有单峰 值。 在外延生长处理和场氧化处理完成之后,通过离子注入法形成第一和第二掩埋层。
    • 76. 发明授权
    • Thermoplastic polymer composition
    • 热塑性聚合物组成
    • US4871799A
    • 1989-10-03
    • US246016
    • 1988-09-14
    • Shigeo KobayashiTakashi Nishida
    • Shigeo KobayashiTakashi Nishida
    • C08L51/06C08F287/00C08L23/22C08L53/02C08L77/00C08L101/00
    • C08L53/02C08F287/00C08L23/22C08L77/00
    • A thermoplastic polymer composition containing (a) a polyester or polyamide thermoplastic polymer and (b) a block graft copolymer which comprises (i) as the backbone portion at least one of a block copolymer or a hydrogenated block copolymer containing blocks of a styrene-type polymer and blocks of a butadiene-type polymer, and (ii) as the graft portion a radical disintegrative polymer, said block graft copolymer having been chemically modified with molecular units containing a functional group which will combine or interact with said thermoplastic polymer a). The thermoplastic polymer composition is superior in flexibility, resistance to chemicals and oil, impact resistance, moldability and elasticity.
    • 一种热塑性聚合物组合物,其包含(a)聚酯或聚酰胺热塑性聚合物和(b)嵌段共聚物,其包含(i)作为主链部分的嵌段共聚物或包含苯乙烯类嵌段的嵌段共聚物或氢化嵌段共聚物中的至少一种 聚合物和丁二烯型聚合物嵌段,和(ii)作为接枝部分是自由基崩解聚合物,所述嵌段接枝共聚物已经用含有与所述热塑性聚合物a)组合或相互作用的官能团的分子单元化学改性。 热塑性聚合物组合物的柔软性,耐化学性和耐油性,耐冲击性,成型性和弹性优异。