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71. 发明申请

US20130186182A1 LEAK INSPECTION DEVICE AND LEAK INSPECTION METHOD 审中-公开
标题翻译：泄漏检测装置和泄漏检测方法
公开(公告)号：US20130186182A1
公开(公告)日：2013-07-25
申请号：US13876744
申请日：2011-09-27
申请人： Tetsuya Yamaguchi
发明人： Tetsuya Yamaguchi
IPC分类号： G01M3/26
CPC分类号： G01M3/26 , G01M3/3263
摘要： A leak inspection device for inspecting leaks from a work by sealing a gas inside the work or sucking the gas therefrom includes: a depressurizing device that reduces the pressure of the gas inside the work; a pressurizing device that pressurizes the gas inside the work; a temperature sensor that detects the temperature of the work; a pressure sensor that detects the pressure of the gas inside the work; and a controller. The controller calculates the saturation vapor pressure at the same temperature as the temperature of the work, controls the depressurizing device to thereby reduce the pressure of the gas inside the work to the saturation vapor pressure, sucks the water vapor that has vaporized inside the work, controls the pressurizing device to thereby seal the gas inside the work and pressurize the gas inside the work until the temperature of the work detected by the temperature sensor reaches a predetermined temperature.
摘要翻译：一种泄漏检查装置，用于通过密封工件内部的气体或从其中吸入气体来检查工件的泄漏，包括：减压装置，其降低工件内部的气体的压力; 对工件内的气体进行加压的加压装置; 检测工件温度的温度传感器; 检测工件内的气体的压力的压力传感器; 和控制器。控制器在与工件温度相同的温度下计算饱和蒸汽压力，控制减压装置，从而将工件内部气体的压力降低到饱和蒸气压，吸收工件内蒸发的水蒸汽，控制加压装置，从而密封工件内部的气体并加压工件内部的气体，直到温度传感器检测到的工件的温度达到预定的温度。

72. 发明申请

US20110090383A1 SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：固态图像感测装置及其制造方法
公开(公告)号：US20110090383A1
公开(公告)日：2011-04-21
申请号：US12877654
申请日：2010-09-08
申请人： Tetsuya Yamaguchi
发明人： Tetsuya Yamaguchi
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/1464
摘要： According to one embodiment, a back side illumination solid-state image sensing device which comprises a pixel region where a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged on a semiconductor substrate, and in which a light illumination surface is formed on a substrate surface opposite to a surface of the semiconductor substrate on which the signal scanning circuit is formed, includes a silicon oxide film formed on the semiconductor substrate on the light illumination surface side, a p-type amorphous silicon compound layer formed on the silicon oxide film, and a hole storage layer formed by the p-type amorphous silicon compound layer near an interface between the semiconductor substrate on the light illumination surface side and the silicon oxide film.
摘要翻译：根据一个实施例，一种背面照明固态图像感测装置，其包括像素区域，其中包括光电转换器和信号扫描电路的多个像素布置在半导体衬底上，并且其中光照明表面是形成在与形成有信号扫描电路的半导体衬底的表面相反的衬底表面上，包括在光照射面侧形成在半导体衬底上的氧化硅膜，形成在该衬底表面上的p型非晶硅化合物层氧化硅膜和由p型非晶硅化合物层在光照射面侧的半导体基板之间的界面附近与氧化硅膜形成的空穴存储层。

73. 发明授权

US07889255B2 Solid-state imaging device comprising a signal storage section including a highly doped area 有权
标题翻译：固态成像装置包括包括高掺杂区域的信号存储部分
公开(公告)号：US07889255B2
公开(公告)日：2011-02-15
申请号：US11251882
申请日：2005-10-18
申请人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
发明人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14632 , H01L27/14636 , H01L27/14643
摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
摘要翻译：设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分杂质浓度高于光电转换区。信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

74. 发明授权

US07855406B2 Solid-state imaging device and method of manufacturing the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07855406B2
公开(公告)日：2010-12-21
申请号：US11776791
申请日：2007-07-12
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
IPC分类号： H01L31/062
CPC分类号： H01L27/14609
摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
摘要翻译：提供了p型外延层和n型外延层已经沉积在p +型衬底上的n / p- / p +衬底。在n型外延层的表面区域中，形成了光电转换部的n型区域。此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从衬底表面到达p型外延层。在芯片切割部分还形成了p型半导体区域，用于将衬底分成各个器件，从衬底表面到达p型外延层。

75. 发明授权

US07823114B2 Method of designing wiring structure of semiconductor device and wiring structure designed accordingly 失效
标题翻译：设计相应的半导体器件布线结构和布线结构的方法
公开(公告)号：US07823114B2
公开(公告)日：2010-10-26
申请号：US12081431
申请日：2008-04-16
申请人： Naoyuki Shigyo , Tetsuya Yamaguchi
发明人： Naoyuki Shigyo , Tetsuya Yamaguchi
IPC分类号： G06F17/50 , H03K19/185 , H01L25/00 , H01L23/58 , H01L23/522
CPC分类号： H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method of designing a wiring structure of an LSI is capable of reducing a capacitance variation ratio ΔC/C or a resistance-by-capacitance variation ratio Δ(RC)/(RC) of the wiring structure. The method sets a process-originated variation ratio (δP) for the wiring structure, a tolerance (ξC) for the capacitance variation ratio (ΔC/C), and a tolerance (ξRC) for the resistance-by-capacitance variation ratio (Δ(RC)/(RC)), evaluates a fringe capacitance ratio (F=CF/CP) according to a fringe capacitance CF and parallel-plate capacitance CP of the wiring structure, and determines the wiring structure so that the fringe capacitance ratio (F) may satisfy the following: For ⁢ ⁢  Δ ⁢ ⁢ C C  ≤ ξ C , ⁢ F ≥ δ P ξ C - 1 ( 1 ) For ⁢ ⁢  Δ ⁡ ( RC ) RC  ≤ ξ RC , ⁢ F ≤ ( 1 - δ P ) ⁢ δ P δ P - ξ RC - 1 ( 2 ) The method employs an equivalent-variations condition defined as |ΔC/C|=|Δ(RC)/(RC)| to determine the shape parameters of each wire of the wiring structure.
摘要翻译：设计LSI的布线结构的方法能够降低布线结构的电容变化率＆Dgr; C / C或电容 - 电容变化率＆amp;（RC）/（RC）。该方法设置了布线结构的过程起始变化率（δP），电容变化率（＆Dgr; C / C）的公差（＆xgr; C）和电阻的公差（＆xgr RC）电容变化率（＆Dgr;（RC）/（RC））根据布线结构的边缘电容CF和平行板电容CP评估边缘电容比（F = CF / CP），并确定布线结构使得条纹电容比（F）可以满足以下条件：ForüüDgr; çC≤＆x x C，F≥δP＆xgr; C-1（1）For唔＆Dgr; ⁡（RC）RC骸≤＆xgr RC，F≤（1-δP）δPδP - ＆xgr; RC-1（2）该方法采用等效变量条件定义为|＆Dgr; C / C | = |＆Dgr;（RC）/（RC）| 以确定布线结构的每根导线的形状参数。

76. 发明授权

US07709870B2 CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body 有权
标题翻译：使用其中N型半导体层层压在P +型基板主体上的N / P +基板的CMOS（互补金属氧化物半导体）型固体摄像装置
公开(公告)号：US07709870B2
公开(公告)日：2010-05-04
申请号：US11558200
申请日：2006-11-09
申请人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
发明人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/1463
摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
摘要翻译：固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体层，形成在第一N型半导体层上。固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

77. 发明授权

US07628729B2 Hydraulic control apparatus for an automatic transmission 有权
标题翻译：自动变速器用液压控制装置
公开(公告)号：US07628729B2
公开(公告)日：2009-12-08
申请号：US11643782
申请日：2006-12-22
申请人： Nobuhiro Sato , Tetsuya Yamaguchi , Kazuyuki Noda , Akira Fukatsu , Mikio Iwase , Kazutoshi Nozaki , Atsushi Honda
发明人： Nobuhiro Sato , Tetsuya Yamaguchi , Kazuyuki Noda , Akira Fukatsu , Mikio Iwase , Kazutoshi Nozaki , Atsushi Honda
IPC分类号： F16H61/26
CPC分类号： F16H61/12 , F16H2061/122 , F16H2061/1232 , F16H2061/126 , Y10S477/906 , Y10T477/6936 , Y10T477/693635 , Y10T477/6939 , Y10T477/693973
摘要： A hydraulic control apparatus, provided with a manual shift valve that outputs a forward range pressure and a reverse range pressure, and a linear solenoid valve that outputs an engagement pressure to the hydraulic servo that engages during reverse travel when energized, includes a fourth clutch relay valve that is interposed between the linear solenoid valve and the hydraulic servo. The fourth clutch relay valve communicates an engagement pressure of the linear solenoid valve to the hydraulic servo by locking in the normal position when a signal pressure of the solenoid valve is input, and communicates a reverse range pressure to the hydraulic servo by being switched to a fail position by the reverse range pressure during a failure in which the fourth clutch relay valve is de-energized. Thereby, it is possible to establish a reverse speed during a failure in which the solenoid valve is de-energized.
摘要翻译：一种液压控制装置，具有输出前进档位压力和倒档范围压力的手动换档阀，以及向通电时反接行驶时接合的液压伺服机构输出接合压力的线性电磁阀，包括第四离合器继电器介于线性电磁阀和液压伺服之间的阀。当输入电磁阀的信号压力时，第四离合器继电器阀通过锁定在正常位置将线性电磁阀的接合压力传递到液压伺服机构，并且通过切换到液压伺服系统将反向范围压力传递给液压伺服机构在第四离合器继动阀被断电的故障期间由反向范围压力引起的故障位置。因此，可以在电磁阀断电的故障期间建立倒车速度。

78. 发明申请

US20080123139A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20080123139A1
公开(公告)日：2008-05-29
申请号：US11946544
申请日：2007-11-28
申请人： Yoshikazu Harada , Norio Tomito , Tetsushi Ito , Showtaro Okamoto , Tetsuya Yamaguchi , Yoshiteru Kikuchi
发明人： Yoshikazu Harada , Norio Tomito , Tetsushi Ito , Showtaro Okamoto , Tetsuya Yamaguchi , Yoshiteru Kikuchi
IPC分类号： G06K15/00
CPC分类号： H04N1/506 , H04N1/0473 , H04N1/29 , H04N2201/04722 , H04N2201/04729 , H04N2201/04731 , H04N2201/04732 , H04N2201/04734 , H04N2201/04786 , H04N2201/04789 , H04N2201/04791
摘要： An image forming apparatus including: an output image forming section for forming an image and a pattern on a supporting medium under a prescribed condition; an output section for transferring the formed image on a recording sheet; a correction section for performing reading of the formed pattern and correcting the condition based on a result of the reading; and a correction control section for controlling operations of the output image forming section, the output section, and the correction section, wherein the correction control section identifies whether or not an area where the image is to be formed and an area where the pattern is to be formed overlap each other, and when the areas are identified that they do not overlap each other, the correction control section controls the output image forming section to simultaneously form the image and the pattern in parallel on the supporting medium.
摘要翻译：一种图像形成装置，包括：输出图像形成部，用于在规定条件下在支撑介质上形成图像和图案; 输出部，用于将形成的图像转印到记录纸上; 校正部分，用于执行所形成的图案的读取并基于读取的结果来校正条件; 以及校正控制部分，用于控制输出图像形成部分，输出部分和校正部分的操作，其中校正控制部分识别要形成图像的区域和图案的区域被形成为彼此重叠，并且当区域被识别为它们彼此不重叠时，校正控制部分控制输出图像形成部分以在支撑介质上同时形成图像和图案。

79. 发明申请

US20070071487A1 Cleaning device 有权
标题翻译：清洁装置
公开(公告)号：US20070071487A1
公开(公告)日：2007-03-29
申请号：US10595249
申请日：2004-10-01
申请人： Takashi Makiura , Takashi Kubo , Koichi Moriyama , Shunichi Hayashiyama , Mitsuru Ogura , Tetsuya Yamaguchi
发明人： Takashi Makiura , Takashi Kubo , Koichi Moriyama , Shunichi Hayashiyama , Mitsuru Ogura , Tetsuya Yamaguchi
IPC分类号： G03G21/00
CPC分类号： G03G21/10
摘要： A cleaning device is provided with a cleaning unit (35) disposed downstream from a position at which a toner image is transferred to a paper. The cleaning unit (35) is provided with a cleaning blade (35c) for scraping off residual toner attached to an image bearing member and a toner catching sheet (35e) for preventing the residual toner or paper dust which have been scraped off from falling outside the cleaning unit. The free length in the toner catching sheet (35e) between affixed positions of a first end portion which is affixed to the cleaning unit (35) and a second end portion which abuts an outer circumferential portion of the image bearing member is determined by an amount of paper dust buildup on the outer circumferential portion of the image bearing member.
摘要翻译：清洁装置设置有设置在调色剂图像被转印到纸张的位置的下游的清洁单元（35）。清洁单元（35）设置有用于刮除附着到图像承载部件上的残余调色剂的清洁刮板（35c）和用于防止刮掉的残留调色剂或纸屑的调色剂捕获片（35e）落在清洁单元外面。附着于清洁单元（35）的第一端部的固定位置与邻接图像承载部件的外周部分的第二端部之间的调色剂接收片（35e）中的自由长度由在图像承载部件的外圆周部分积聚纸张量。

80. 发明申请

US20060163684A1 Solid-state image pickup apparatus 失效
公开(公告)号：US20060163684A1
公开(公告)日：2006-07-27
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

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