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71. 发明申请

US20090030158A1 RESIN COMPOSITION 有权
标题翻译：树脂组合物
公开(公告)号：US20090030158A1
公开(公告)日：2009-01-29
申请号：US12180115
申请日：2008-07-25
申请人： Hiroshi Amano , Shigeru Kawahara
发明人： Hiroshi Amano , Shigeru Kawahara
IPC分类号： C08G59/20 , C07D233/54
CPC分类号： C07F9/5407 , B01J31/0277 , C07D233/58 , C08L63/00 , C08L81/00 , C08L2666/02
摘要： Resin compositions which contain a compound having at least two epoxy and/or thiirane groups in the molecule (ingredient (1)) and a specific ionic liquid (ingredient (2)), as combined, are practicable resin compositions which comprise constitutive elements of readily available materials and have well-balanced suitable curing capability and storage stability. Preferably, the ionic liquid (ingredient (2)) comprises a combination of an ammonium cation or phosphonium cation and a carboxylate anion.
摘要翻译：包含在分子中具有至少两个环氧基和/或硫杂环烷基的化合物（成分（1））和特定离子液体（成分（2））组合的树脂组合物是可行的树脂组合物，其包含易于构成的元素可用材料，并具有良好平衡的合适的固化能力和储存稳定性。优选地，离子液体（成分（2））包括铵阳离子或鏻阳离子和羧酸根阴离子的组合。

72. 发明申请

US20080123713A1 Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element 有权
标题翻译：双光束干涉曝光装置，双光束干涉曝光方法，半导体发光元件制造方法和半导体发光元件
公开(公告)号：US20080123713A1
公开(公告)日：2008-05-29
申请号：US11897895
申请日：2007-08-31
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S3/08 , H01L21/02
CPC分类号： G03F7/70408 , G03F7/70025 , H01L33/22 , H01S3/082 , H01S3/109 , H01S3/2207
摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.
摘要翻译：本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。

73. 发明授权

US07361948B2 Filter function-equipped optical sensor and flame sensor 有权
标题翻译：配有滤光功能的光学传感器和火焰传感器
公开(公告)号：US07361948B2
公开(公告)日：2008-04-22
申请号：US10550824
申请日：2004-03-23
申请人： Akira Hirano , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
发明人： Akira Hirano , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L31/062
CPC分类号： G02B5/284
摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).
摘要翻译：为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y），0 <= y <= 1）。

74. 发明申请

US20070176531A1 Phoshor and light-emitting diode 审中-公开
标题翻译： Phoshor和发光二极管
公开(公告)号：US20070176531A1
公开(公告)日：2007-08-02
申请号：US10594010
申请日：2005-03-22
申请人： Hiroyuki Kinoshita , Hiromu Shiomi , Makolo Sasaki , Toshihiko Hayashi , Hiroshi Amano , Satoshi Kamiyama , Motoaki Twaya , Isamu Akasaki
发明人： Hiroyuki Kinoshita , Hiromu Shiomi , Makolo Sasaki , Toshihiko Hayashi , Hiroshi Amano , Satoshi Kamiyama , Motoaki Twaya , Isamu Akasaki
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/63 , C09K11/0883 , C09K11/59 , C30B23/00 , C30B29/36 , H01L33/502 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a phosphor which is excited by a long wavelength light source in the ultraviolet region or blue-violet visible region and mainly emits light in violet-blue-yellow-red visible region. Also disclosed is a low-cost light-emitting diode which is easily mounted and excellent in color rendering properties. This light-emitting diode does not have much color change due to radiation angle. A phosphor composed of SiC is characterized in that it is excited by an outside light source for emitting light and doped with N and at least one of B and Al.
摘要翻译：公开了在紫外线区域或蓝紫色可见区域被长波长光源激发的荧光体，主要发出紫 - 蓝 - 黄 - 红 - 红色可见区域的光。还公开了一种易于安装并且显色性优异的低成本发光二极管。该发光二极管由于辐射角度而没有太多的颜色变化。由SiC构成的荧光体的特征在于，其被外部光源激发，发光并掺杂有N和B和Al中的至少一种。

75. 发明申请

US20070114560A1 Semiconductor and method of semiconductor fabrication 有权
标题翻译：半导体和半导体制造方法
公开(公告)号：US20070114560A1
公开(公告)日：2007-05-24
申请号：US11603977
申请日：2006-11-21
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/14 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/32
摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.
摘要翻译：本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

76. 发明申请

US20060245734A1 Reproducing device and reproducing method 有权
标题翻译：再现装置和再现方法
公开(公告)号：US20060245734A1
公开(公告)日：2006-11-02
申请号：US11407050
申请日：2006-04-20
申请人： Hiroshi Amano , Masahiro Nobori , Shoji Shirakawa
发明人： Hiroshi Amano , Masahiro Nobori , Shoji Shirakawa
IPC分类号： H04N7/00
CPC分类号： H04N5/765 , H04N5/775 , H04N5/781 , H04N5/85 , H04N9/8205
摘要： The present invention allows a reproducing device that can be used in various device environmental conditions to execute adequate output operation according to a device environmental condition. When reproducing a content signal of audio and video, a reproducing device determines a device environmental condition as the coupling state of the reproducing device and surroundings of the reproducing device. Subsequently, the reproducing device implements control according to output part information and control information that are set with being associated with the device environmental condition. Based on the output part information, either or both of a main-body output unit and an external output unit are controlled as a part for outputting audio or video. In addition, control corresponding to the registered control information is executed inside the device, or details of the control are indicated to a coupled external device.
摘要翻译：本发明允许可以在各种设备环境条件下使用的再现装置根据设备环境条件执行足够的输出操作。当再现音频和视频的内容信号时，再现装置将设备环境条件确定为再现设备的耦合状态和再现设备的周围环境。随后，再现装置根据与设备环境条件相关联的设置的输出部分信息和控制信息实现控制。基于输出部分信息，将主体输出单元和外部输出单元中的一个或两个作为输出音频或视频的一部分进行控制。此外，在设备内部执行对应于登记的控制信息的控制，或者将控制的细节指示给耦合的外部设备。

77. 发明授权

US06967359B2 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same 有权
标题翻译：氮化物半导体衬底的制造方法和使用其的半导体光学器件
公开(公告)号：US06967359B2
公开(公告)日：2005-11-22
申请号：US10488753
申请日：2002-09-09
申请人： Satoshi Kamiyama , Hiroshi Amano
发明人： Satoshi Kamiyama , Hiroshi Amano
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L31/0304 , H01L31/108 , H01L33/06 , H01L33/32 , H01L33/34 , H01L31/0328
CPC分类号： H01L33/24 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02636 , H01L21/02658 , H01L31/03046 , H01L31/108 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AlN molar fraction is selectively grown on a first group-III nitride semiconductor, such as GaN, to have a specific crystal face. Then, on the seed crystals, an AlGaN with a high AlN molar fraction is grown through a second group-III nitride semiconductor, such as AlN deposited at a low temperature. The present invention can provide an AlGaN-crystal substrate having a low dislocation density in a wide area without any crack, and a high-performance short-wavelength optical device using the substrate.
摘要翻译：公开了氮化物半导体衬底及其制造方法。由具有相对较低的AlN摩尔分数的GaN或AlGaN制成的晶种在诸如GaN的第一III族氮化物半导体上有选择地生长以具有特定的晶面。然后，在晶种上，通过第二III族氮化物半导体，例如在低温下沉积的AlN，生长具有高AlN摩尔分数的AlGaN。本发明可以提供在宽范围内没有任何裂纹的位错密度低的AlGaN晶体衬底，以及使用该衬底的高性能短波长光学器件。

78. 发明申请

US20050037526A1 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same 有权
标题翻译：氮化物半导体衬底的制造方法和使用其的半导体光学器件
公开(公告)号：US20050037526A1
公开(公告)日：2005-02-17
申请号：US10488753
申请日：2002-09-09
申请人： Satoshi Kamiyama , Hiroshi Amano
发明人： Satoshi Kamiyama , Hiroshi Amano
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L31/0304 , H01L31/108 , H01L33/06 , H01L33/32 , H01L33/34 , H01L21/00 , H01L33/00
CPC分类号： H01L33/24 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02636 , H01L21/02658 , H01L31/03046 , H01L31/108 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AIN molar fraction is selectively grown on a first group-III nitride semiconductor, such as GaN, to have a specific crystal face. Then, on the seed crystals, an AlGaN with a high AIN molar fraction is grown through a second group-III nitride semiconductor, such as AIN deposited at a low temperature. The present invention can provide an AlGaN-crystal substrate having a low dislocation density in a wide area without any crack, and a high-performance short-wavelength optical device using the substrate.
摘要翻译：公开了氮化物半导体衬底及其制造方法。在具有相对低的AIN摩尔分数的GaN或AlGaN制成的晶种选择性地生长在诸如GaN的第一III族氮化物半导体上以具有特定的晶面。然后，在晶种上，通过第二组III族氮化物半导体（例如在低温下沉积的AlN）生长具有高AIN摩尔分数的AlGaN。本发明可以提供在宽范围内没有任何裂纹的位错密度低的AlGaN晶体衬底，以及使用该衬底的高性能短波长光学器件。

79. 发明授权

US06849472B2 Nitride semiconductor device with reduced polarization fields 有权
标题翻译：具有减小的偏振场的氮化物半导体器件
公开(公告)号：US06849472B2
公开(公告)日：2005-02-01
申请号：US09992192
申请日：2001-11-13
申请人： Michael R. Krames , Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
发明人： Michael R. Krames , Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L21/20 , H01L21/205 , H01L31/18 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/343 , H01L21/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L31/1844 , H01L31/1852 , H01L33/0062 , H01L33/06 , H01L33/18 , H01L33/24 , H01L33/32 , H01S5/021 , H01S5/0213 , H01S5/3201 , H01S5/3202 , H01S5/343 , H01S5/34333 , Y02E10/544
摘要： A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.
摘要翻译：一种制造包括III-氮化物量子阱层的发光半导体器件的方法包括选择量子阱层的面取向以控制压电场的场强和/或自发电场的场强量子阱层，并用选定的面取向生长量子阱层。例如，可以选择小面取向以减小压电场的大小和/或自发电场的大小。也可以选择面取向以控制或减小组合的压电和自发电场强度的大小。

80. 发明申请

US20050006635A1 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 审中-公开
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US20050006635A1
公开(公告)日：2005-01-13
申请号：US10810309
申请日：2004-03-26
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , H01L21/22 , H01L33/00 , H01L29/06
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Tl, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0
摘要翻译：半导体装置包括由化学式XB2表示的二硼化物单晶构成的基板，其中X包括Tl，Zr，Nb和Hf中的至少一个，半导体缓冲层形成在基板的主表面上并由 AlyGa1-yN（0

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