专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07183578B2 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 失效
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US07183578B2
公开(公告)日：2007-02-27
申请号：US11365459
申请日：2006-02-28
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： H01L27/15
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1−yN (0
摘要翻译：半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层该衬底的主表面由Al y Ga 1-y N（0

2. 发明申请

US20060145166A1 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 失效
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US20060145166A1
公开(公告)日：2006-07-06
申请号：US11365459
申请日：2006-02-28
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0
摘要翻译：半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层该衬底的主表面由Al y Ga 1-y N（0

3. 发明申请

US20050006635A1 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 审中-公开
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US20050006635A1
公开(公告)日：2005-01-13
申请号：US10810309
申请日：2004-03-26
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , H01L21/22 , H01L33/00 , H01L29/06
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Tl, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0
摘要翻译：半导体装置包括由化学式XB2表示的二硼化物单晶构成的基板，其中X包括Tl，Zr，Nb和Hf中的至少一个，半导体缓冲层形成在基板的主表面上并由 AlyGa1-yN（0

4. 发明申请

US20060054919A1 Light-emitting element, method for manufacturing the same and lighting equipment using the same 审中-公开
标题翻译：发光元件及其制造方法以及使用其的照明设备
公开(公告)号：US20060054919A1
公开(公告)日：2006-03-16
申请号：US11213350
申请日：2005-08-26
申请人： Toshiya Matsuda , Takanori Yasuda , Kazuhiro Nishizono , Shun Takanami , Yuuji Kishida
发明人： Toshiya Matsuda , Takanori Yasuda , Kazuhiro Nishizono , Shun Takanami , Yuuji Kishida
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/405
摘要： The present invention is a light-emitting element provided with semiconductor layers of gallium nitride compounds 4 having a multilayer structure including an emitting layer 3 formed by subjecting gallium nitride compounds to epitaxial growth on a surface 2 of a substrate 1, wherein a back surface 7 of the semiconductor layers 4 exposed by removal of the substrate 1 or an outermost layer 5 of the semiconductor layers 4 is provided as a radiating surface 8 for radiating light emitted from the emitting layer 3 to the outside, and able to provide a higher emission intensity from smaller electrical power because the absence of a substrate greatly improves the radiation efficiency of light.
摘要翻译：本发明是一种发光元件，其具有具有多层结构的氮化镓化合物4的半导体层，该多层结构包括通过使氮化镓化合物在基板1的表面2上外延生长而形成的发光层3，其中背面7 通过去除衬底1或半导体层4的最外层5而暴露的半导体层4被设置为用于将从发光层3发射的光照射到外部的辐射表面8，并且能够提供更高的发射强度从较小的电力，因为不存在基板大大提高了光的辐射效率。

5. 发明申请

US20090223450A1 MEMBER OF SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工装置和基板加工装置的成员
公开(公告)号：US20090223450A1
公开(公告)日：2009-09-10
申请号：US12396712
申请日：2009-03-03
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Toshiya Matsuda
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Toshiya Matsuda
IPC分类号： C23C14/14
CPC分类号： C23C16/4404 , C23C16/52
摘要： A member of a substrate processing apparatus, which can prevent minute particles from becoming attached to a wafer. The substrate processing apparatus has a chamber in which the wafer is accommodated, and the wafer is subjected to plasma processing in the chamber. The member is disposed in the chamber and comprised of a base material and an yttria coating that coats the base material. The yttria coating is comprised of an yttria base layer coated on the base material, and an yttria upper layer laminated on at least a part of the yttria base layer, and the structure of the yttria upper layer is looser than that of the yttria base layer.
摘要翻译：能够防止微粒附着在晶片上的基板处理装置的构件。基板处理装置具有容纳晶片的室，并且在该室中进行等离子体处理。该构件设置在腔室中并且由基材和涂覆基材的氧化钇涂层组成。氧化钇涂层由涂覆在基材上的氧化钇基层和层叠在氧化钇基层的至少一部分上的氧化钇上层组成，并且氧化钇上层的结构比氧化钇底层的结构松散。

6. 发明申请

US20090064760A1 CONTAINER CLEANLINESS MEASUREMENT APPARATUS AND METHOD, AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：集装箱清洁度测量装置和方法以及基板处理系统
公开(公告)号：US20090064760A1
公开(公告)日：2009-03-12
申请号：US12199960
申请日：2008-08-28
申请人： Tsuyoshi MORIYA , Toshiya Matsuda
发明人： Tsuyoshi MORIYA , Toshiya Matsuda
IPC分类号： G01N1/22 , G01N1/00
CPC分类号： G01N1/2202 , G01N1/2208 , G01N15/0606 , G01N15/065 , G01N2001/2217 , G01N2015/0261 , H01L21/67028 , H01L21/67253
摘要： A container cleanliness measurement apparatus capable of preventing particles from being adhered to substrates, while improving the operation efficiency of a container for housing substrates. An FOUP inspection apparatus includes a particle-separation promoting nozzle for promoting separation of particles adhered to an inner wall of an FOUP and to carries for holding peripheral portions of wafers inside the FOUP, a particle collecting nozzle for collecting particles separated from the inner wall of the FOUP, etc., and a particle counter for measuring an amount of collected particles. The particle-separation promoting nozzle and the particle collecting nozzle constitute a probe nozzle which is adapted to enter inside the FOUP.
摘要翻译：一种能够防止颗粒附着于基板的容器清洁度测量装置，同时提高用于容纳基板的容器的操作效率。 FOUP检查装置包括用于促进分离附着在FOUP的内壁上的颗粒的颗粒分离促进喷嘴，并且用于承载用于保持FOUP内的晶片周边部分的颗粒收集喷嘴，用于收集从内部壁分离的颗粒的颗粒收集喷嘴 FOUP等，以及用于测量收集的颗粒量的颗粒计数器。颗粒分离促进喷嘴和颗粒收集喷嘴构成适于进入FOUP内部的探针喷嘴。

7. 发明授权

US08351311B2 Semiconductor integrated circuit and optical disk device having the same 失效
标题翻译：具有相同的半导体集成电路和光盘装置
公开(公告)号：US08351311B2
公开(公告)日：2013-01-08
申请号：US13094569
申请日：2011-04-26
申请人： Toshiya Matsuda , Hiroshi Ide
发明人： Toshiya Matsuda , Hiroshi Ide
IPC分类号： G11B7/00
CPC分类号： G11B7/0943 , G11B7/0053 , G11B7/0903 , G11B7/0906 , G11B20/10009 , G11B20/18 , G11B2007/0006 , G11B2020/1239 , G11B2220/2541
摘要： The present invention achieves higher precision and lower power consumption by reducing semiconductor chip occupation area. A semiconductor integrated circuit which can be mounted on an optical disk device has: a wobble signal generating circuit capable of receiving first, second, third, and fourth light reception output signals A, B, C, and D of a light receiving element in an optical pickup and detecting a wobble in a recordable disk; a differential phase detection signal (DPD) generating circuit for tracking an unrecordable disk; and two A/D converters and an arithmetic circuit. The first, second, third, and fourth light reception output signals are selectively supplied to the two A/D converters, the arithmetic circuit in a first operation mode generates a first addition output signal of A and C and a second addition output signal of B and D, the DPD generating circuit generates a digital phase comparison signal, the arithmetic circuit in a second operation mode generates a third addition output signal of A and D and a fourth addition output signal of B and C, and the wobble signal generating circuit generates a digital wobble signal.
摘要翻译：本发明通过减少半导体芯片的占用面积来实现更高的精度和更低的功耗。可以安装在光盘装置上的半导体集成电路具有：摆动信号发生电路，其能够接收光接收元件的第一，第二，第三和第四光接收输出信号A，B，C和D 光拾取器和检测可记录盘中的摆动; 用于跟踪不可记录盘的差分相位检测信号（DPD）产生电路; 和两个A / D转换器和一个运算电路。第一，第二，第三和第四光接收输出信号被选择性地提供给两个A / D转换器，运算电路在第一操作模式中产生A和C的第一相加输出信号和B的第二相加输出信号和D，DPD发生电路产生数字相位比较信号，第二运行模式中的运算电路产生A和D的第三相加输出信号和B和C的第四加法输出信号，并且摆动信号产生电路产生数字摆频信号。

8. 发明授权

US08012303B2 Container cleanliness measurement apparatus and method, and substrate processing system 有权
标题翻译：集装箱清洁度测量装置和方法，以及基板处理系统
公开(公告)号：US08012303B2
公开(公告)日：2011-09-06
申请号：US12199960
申请日：2008-08-28
申请人： Tsuyoshi Moriya , Toshiya Matsuda
发明人： Tsuyoshi Moriya , Toshiya Matsuda
IPC分类号： H01L21/00
CPC分类号： G01N1/2202 , G01N1/2208 , G01N15/0606 , G01N15/065 , G01N2001/2217 , G01N2015/0261 , H01L21/67028 , H01L21/67253
摘要： A container cleanliness measurement apparatus capable of preventing particles from being adhered to substrates, while improving the operation efficiency of a container for housing substrates. An FOUP inspection apparatus includes a particle-separation promoting nozzle for promoting separation of particles adhered to an inner wall of an FOUP and to carries for holding peripheral portions of wafers inside the FOUP, a particle collecting nozzle for collecting particles separated from the inner wall of the FOUP, etc., and a particle counter for measuring an amount of collected particles. The particle-separation promoting nozzle and the particle collecting nozzle constitute a probe nozzle which is adapted to enter inside the FOUP.
摘要翻译：一种能够防止颗粒附着于基板的容器清洁度测量装置，同时提高用于容纳基板的容器的操作效率。 FOUP检查装置包括用于促进分离附着在FOUP的内壁上的颗粒的颗粒分离促进喷嘴，并且用于承载用于保持FOUP内的晶片周边部分的颗粒收集喷嘴，用于收集从内部壁分离的颗粒的颗粒收集喷嘴 FOUP等，以及用于测量收集的颗粒量的颗粒计数器。颗粒分离促进喷嘴和颗粒收集喷嘴构成适于进入FOUP内部的探针喷嘴。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式