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    • 71. 发明申请
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20070128747A1
    • 2007-06-07
    • US11602261
    • 2006-11-21
    • Tomoko TamuraTomoyuki AokiTakuya TsurumeKoji Dairiki
    • Tomoko TamuraTomoyuki AokiTakuya TsurumeKoji Dairiki
    • H01L21/00
    • H01L27/1266H01L27/1214
    • First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.
    • 第一半导体集成电路和第二半导体集成电路布置在第一基板上,使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻,通过多次传送操作被传送到附加的基板。 在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底(第四衬底和第五衬底)之后,将电路分成对应于每个半导体集成电路的半导体器件。 第一半导体集成电路在第四衬底上彼此保持距离的同时被布置,并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。 因此,可以获得第四基板和第五基板中的每一个的大分割裕度。
    • 74. 发明授权
    • Composition and process for treating the surface of aluminiferous metals
    • 用于处理含铝金属表面的组成和方法
    • US6059896A
    • 2000-05-09
    • US347
    • 1998-01-21
    • Ryoji EharaMasahiro MotozawaTomoyuki Aoki
    • Ryoji EharaMasahiro MotozawaTomoyuki Aoki
    • C23C22/36C23C22/48
    • C23C22/361
    • A surface of aluminiferous metal is brought into contact at 25 to 65.degree. C. for 2 to 100 seconds with a surface treatment bath with a pH of 1.0 to 6.0 that contains phosphate ions, dissolved titanium and/or zirconium compounds, dissolved fluorine-containing anions, and a water soluble polymer in the following weight proportions: 1-100:1-50:1-200:1-200. This is followed by a water rinse and drying. The water soluble polymer has a chemical structure conforming to formula (I), in which each of X.sup.1 and X.sub.2 represents a hydrogen atom, a C.sub.1 to C.sub.5 alkyl group, or a C.sub.1 to C.sub.5 hydroxyalkyl group; each of Y.sup.1 and Y.sup.2 represents a hydrogen atom or a moiety "Z" that to formula (II) or (III), wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 represents a C.sub.1 to C.sub.10 alkyl group or a C.sub.1 to C.sub.10 hydroxyalkyl group; the average value for the number of Z moieties substituted on each aromatic ring in the polymer molecules is from 0.2 to 1.0; n is an integer; and the average value of n for the total polymer is from 2 to 50. ##STR1##
    • PCT No.PCT / US96 / 11537 Sec。 371日期1998年1月21日 102(e)1998年1月21日PCT PCT 1996年7月19日PCT公布。 出版物WO97 / 04145 日期:1997年2月6日利用含有磷酸根离子,溶解的钛和/或锆化合物的pH为1.0〜6.0的表面处理液,使含铝金属的表面在25〜65℃下接触2〜100秒 ,溶解的含氟阴离子和水溶性聚合物的重量比例如下:1-100:1-50:1-200:1-200。 然后进行水冲洗和干燥。 水溶性聚合物具有符合式(I)的化学结构,其中X1和X2各自表示氢原子,C1至C5烷基或C1至C5羟烷基; Y 1和Y 2各自表示氢原子或符合式(II)或(III)的部分“Z”,其中R 1,R 2,R 3,R 4和R 5各自表示C 1至C 10烷基或C 1至C 10烷基 至C10羟烷基; 聚合物分子中每个芳环上取代的Z部分的数目的平均值为0.2-1.0; n是整数; 总聚合物的n的平均值为2〜50。