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    • 72. 发明授权
    • Traction control device
    • 牵引控制装置
    • US08725360B2
    • 2014-05-13
    • US13140537
    • 2009-12-25
    • Koji UematsuKazuhiro HatakeYuya Kusumoto
    • Koji UematsuKazuhiro HatakeYuya Kusumoto
    • G06G7/70
    • B60W30/18172B60K17/35B60T8/175B60T8/4809B60T10/00B60T2201/14B60T2210/16B60W10/14B60W10/16B60W10/184B60W2300/17B60W2510/0233B60W2520/263B60W2520/266B60W2520/28B60W2720/403B60W2720/406
    • The invention provides a traction control device capable of ensuring a sufficient acceleration and course traceability during the turning of a vehicle irrespective of the type of driving system or a road surface condition. A traction control device of the invention includes: a control-start determiner that determines whether or not to control a braking mechanism; and a traction force estimating section that estimates a traction force between each of wheels and the road surface. The traction force estimating section includes: a control condition determining section that determines a control condition of the braking mechanism based on a result of the determination of the control-start determiner; a traction force initial value setting section that sets an initial value in accordance with a result of the determination of the control condition determining section; and a traction force modifying section that modifies the traction force based on a control deviation.
    • 本发明提供了一种牵引力控制装置,其能够确保在车辆转动期间的足够的加速度和行程可追溯性,而与驾驶系统的类型或路面状况无关。 本发明的牵引力控制装置包括:控制启动确定器,其确定是否控制制动机构; 以及牵引力估计部,其估计各车轮与路面之间的牵引力。 牵引力估计部分包括:控制条件确定部,其基于控制开始确定器的确定结果确定制动机构的控制状态; 牵引力初始值设定部,其根据所述控制条件决定部的判定结果来设定初始值; 以及牵引力调整部,其基于控制偏差来修正牵引力。
    • 73. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD
    • 制造半导体波形的方法以及用于该方法的复合基底和复合基板
    • US20120228613A1
    • 2012-09-13
    • US13107286
    • 2011-05-13
    • Yuki SEKIIssei SatohKoji UematsuYoshiyuki Yamamoto
    • Yuki SEKIIssei SatohKoji UematsuYoshiyuki Yamamoto
    • H01L29/04B32B3/00H01L27/12H01L29/02H01L21/762H01L29/22
    • H01L29/0684B32B2264/102B32B2307/704B32B2457/14H01L21/76254
    • A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.
    • 本发明的制造半导体晶片的方法包括以下步骤:通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层,从而将半导体晶体层与基底分离,从而获得包括半导体晶体层和半导体层的半导体晶片。 因此,提供一种制造半导体晶片的方法,而不管基底的类型如何,以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片,以有效地制造半导体器件。
    • 75. 发明申请
    • METHOD FOR GROWING GaN CRYSTAL
    • GaN晶体生长方法
    • US20110100292A1
    • 2011-05-05
    • US13003540
    • 2009-07-14
    • Koji UematsuHiroaki YoshidaMasanori MorishitaShinsuke Fujiwara
    • Koji UematsuHiroaki YoshidaMasanori MorishitaShinsuke Fujiwara
    • C30B19/04
    • H01L21/0254C30B9/00C30B29/406H01L21/02378H01L21/02389H01L21/02395H01L21/02625H01L21/02658H01L33/0075H01L33/16
    • A method for growing a GaN crystal includes a step of preparing a substrate (10) that includes a main surface (10m) and includes a Gax Aly In1-x-y N seed crystal (10a) including the main surface (10m) and a step of growing a GaN crystal (20) on the main surface (10m) at an atmosphere temperature of 800° C. or more and 1500° C. or less and at an atmosphere pressure of 500 atmospheres or more and less than 2000 atmospheres by bringing a solution (7) provided by dissolving (5) nitrogen in a Ga melt (3) into contact with the main surface (10m) of the substrate (10). The method further includes, after the step of preparing the substrate (10) and before the step of growing the GaN crystal (20), a step of etching the main surface (10m) of the substrate (10). Thus, a method for growing a GaN crystal having a low dislocation density and high crystallinity is provided without adding impurities other than raw materials to the melt and without increasing the size of a crystal growth apparatus.
    • 一种用于生长GaN晶体的方法包括制备包括主表面(10m)并包括主表面(10m)的Gax Aly In 1-xy N晶种(10a)的衬底(10)的步骤和 在800℃以上且1500℃以下的气氛温度和500大气压以上且小于2000个大气压的气氛下,在主表面(10μm)上生长GaN晶体(20),通过使 通过将(5)氮在Ga熔体(3)中溶解以与衬底(10)的主表面(10m)接触而提供的溶液(7)。 该方法还包括在制备衬底(10)的步骤之后和生长GaN晶体(20)的步骤之前,蚀刻衬底(10)的主表面(10m)的步骤。 因此,提供了一种生长具有低位错密度和高结晶度的GaN晶体的方法,而不增加熔体中的原料以外的杂质,而不增加晶体生长装置的尺寸。
    • 77. 发明授权
    • Traction control apparatus
    • 牵引力控制装置
    • US08989969B2
    • 2015-03-24
    • US13796298
    • 2013-03-12
    • Koji UematsuKazuhiro Hatake
    • Koji UematsuKazuhiro Hatake
    • B60T8/175E02F9/20F02D29/02B60T8/1769
    • E02F9/2083B60T8/175B60T8/1769B60T2210/16B60T2270/202F02D29/02
    • An object of the invention is to provide a traction control apparatus capable of suitably controlling an error, if it occurs, between an estimation of a vehicle speed and an actual vehicle speed. A traction control apparatus according to the invention includes a vehicle speed estimator and a driving-force controller. The traction control apparatus includes a vehicle state determiner that determines whether the vehicle speed of the construction vehicle estimated by the vehicle speed estimator and the driving-force control by the driving-force controller are balanced, and a driving-force control changer that changes a driving-force control by the driving-force controller when the vehicle state determiner determines the vehicle speed and the driving-force control to be unbalanced.
    • 本发明的目的是提供一种牵引控制装置,其能够适当地控制在车速和实际车速的估计之间发生的误差。 根据本发明的牵引力控制装置包括车速估计器和驱动力控制器。 牵引控制装置包括车辆状态判定器,其确定由车速估计器估计的施工车辆的车速和由驱动力控制器的驱动力控制是否平衡的驱动力控制变更器, 当车辆状态确定器确定车速并且驱动力控制不平衡时,通过驱动力控制器的驱动力控制。
    • 78. 发明授权
    • Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method
    • 制造半导体晶片的方法以及用于该方法的复合基板和复合基板
    • US08497185B2
    • 2013-07-30
    • US13107286
    • 2011-05-13
    • Yuki SekiIssei SatohKoji UematsuYoshiyuki Yamamoto
    • Yuki SekiIssei SatohKoji UematsuYoshiyuki Yamamoto
    • H01L29/02H01L21/762H01L29/22
    • H01L29/0684B32B2264/102B32B2307/704B32B2457/14H01L21/76254
    • A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.
    • 本发明的制造半导体晶片的方法包括以下步骤:通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层,从而将半导体晶体层与基底分离,从而获得包括半导体晶体层和半导体层的半导体晶片。 因此,提供一种制造半导体晶片的方法,而不管基底的类型如何,以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片,以有效地制造半导体器件。