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1. 发明申请

US20120228613A1 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD 有权
标题翻译：制造半导体波形的方法以及用于该方法的复合基底和复合基板
公开(公告)号：US20120228613A1
公开(公告)日：2012-09-13
申请号：US13107286
申请日：2011-05-13
申请人： Yuki SEKI , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
发明人： Yuki SEKI , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/04 , B32B3/00 , H01L27/12 , H01L29/02 , H01L21/762 , H01L29/22
CPC分类号： H01L29/0684 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254
摘要： A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.
摘要翻译：本发明的制造半导体晶片的方法包括以下步骤：通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层，从而将半导体晶体层与基底分离，从而获得包括半导体晶体层和半导体层的半导体晶片。因此，提供一种制造半导体晶片的方法，而不管基底的类型如何，以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片，以有效地制造半导体器件。

2. 发明授权

US08658517B2 Method of manufacturing GaN-based film 有权
公开(公告)号：US08658517B2
公开(公告)日：2014-02-25
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

3. 发明申请

US20130149847A1 METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR 有权
标题翻译：制造GaN基膜及其使用的复合基板的方法
公开(公告)号：US20130149847A1
公开(公告)日：2013-06-13
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

4. 发明授权

US08497185B2 Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method 有权
标题翻译：制造半导体晶片的方法以及用于该方法的复合基板和复合基板
公开(公告)号：US08497185B2
公开(公告)日：2013-07-30
申请号：US13107286
申请日：2011-05-13
申请人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
发明人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/02 , H01L21/762 , H01L29/22
CPC分类号： H01L29/0684 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254
摘要： A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.
摘要翻译：本发明的制造半导体晶片的方法包括以下步骤：通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层，从而将半导体晶体层与基底分离，从而获得包括半导体晶体层和半导体层的半导体晶片。因此，提供一种制造半导体晶片的方法，而不管基底的类型如何，以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片，以有效地制造半导体器件。

5. 发明授权

US09184228B2 Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer 有权
标题翻译：复合基底包括烧结基体和基底表面平整层，以及复合基片，包括复合基底和半导体结晶层
公开(公告)号：US09184228B2
公开(公告)日：2015-11-10
申请号：US13107241
申请日：2011-05-13
申请人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
发明人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/04 , H01L29/02 , H01L21/762 , H01L27/12
CPC分类号： H01L29/02 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254 , H01L27/1214 , H01L27/1266 , Y10T428/24355
摘要： A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10−6K−1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.
摘要翻译：本发明的复合基材包括烧结基体和设置在烧结基体上的基面平坦化层，基面平坦化层的表面RMS粗糙度不大于1.0nm。本发明的复合基板包括复合基材和设置在复合基材的位于基面平坦化层的一侧的半导体晶体层，烧结基体的热膨胀系数与热膨胀系数之差的半导体晶体层不超过4.5×10-6K-1。由此，提供将半导体结晶层附着在烧结基体上的复合基板和适合用于该复合基板的复合基材。

6. 发明授权

US08962365B2 Method of manufacturing GaN-based film and composite substrate used therefor 有权
标题翻译：制造用于其的GaN基膜和复合基板的方法
公开(公告)号：US08962365B2
公开(公告)日：2015-02-24
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/00 , H01L21/02 , C30B23/02 , C30B25/18 , C30B29/40
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

7. 发明授权

US08697550B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697550B2
公开(公告)日：2014-04-15
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

8. 发明申请

US20130040442A1 METHOD OF MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US20130040442A1
公开(公告)日：2013-02-14
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

9. 发明申请

US20120228612A1 COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING LAYER, AND COMPOSITE SUBSTRATE INCLUDING THAT COMPOSITE BASE AND SEMICONDUCTOR CRYSTALLINE LAYER 有权
标题翻译：复合基底包括烧结基体和基体表面平坦层，以及包括复合基体和半导体晶体层的复合基材
公开(公告)号：US20120228612A1
公开(公告)日：2012-09-13
申请号：US13107241
申请日：2011-05-13
申请人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
发明人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/04 , B32B3/00 , H01L29/06
CPC分类号： H01L29/02 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254 , H01L27/1214 , H01L27/1266 , Y10T428/24355
摘要： A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10−6K−1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.
摘要翻译：本发明的复合基材包括烧结基体和设置在烧结基体上的基面平坦化层，基面平坦化层的表面RMS粗糙度不大于1.0nm。本发明的复合基板包括复合基材和设置在复合基材的位于基面平坦化层的一侧的半导体晶体层，烧结基体的热膨胀系数与热膨胀系数之差的半导体晶体层不超过4.5×10-6K-1。由此，提供将半导体结晶层附着在烧结基体上的复合基板和适合用于该复合基板的复合基材。

10. 发明申请

US20120122301A1 METHOD OF MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US20120122301A1
公开(公告)日：2012-05-17
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

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