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71. 发明授权

US07229372B2 Slippage prevention apparatus of belt-drive continuously variable transmission for automotive vehicle 有权
标题翻译：汽车皮带传动无级变速器防滑装置
公开(公告)号：US07229372B2
公开(公告)日：2007-06-12
申请号：US10670775
申请日：2003-09-26
申请人： Shigeki Shimanaka , Hiroyasu Tanaka , Youhei Ishikawa , Tatsuo Wakahara , Yoshihisa Kodama , Hideki Oshita
发明人： Shigeki Shimanaka , Hiroyasu Tanaka , Youhei Ishikawa , Tatsuo Wakahara , Yoshihisa Kodama , Hideki Oshita
IPC分类号： F16H61/12 , F16H61/18 , B60K41/12
CPC分类号： F16H61/66272 , F16H59/42 , F16H2059/683 , F16H2061/66277 , Y10T477/624
摘要： During a downshift of a belt-drive continuously variable transmission, occurring owing to vehicle deceleration, a CVT controller foretells that a slippage between a drive belt and each of primary and secondary variable-width pulleys tends to occur, when a primary pulley pressure is less than a first predetermined pressure level and a primary pulley speed is less than a first predetermined rotational speed. When the belt slippage has been foretold, the CVT controller inhibits the primary pulley pressure from dropping by setting an actual transmission ratio calculated before a set time period from a time when the slippage has been foretold or a transmission ratio of a relatively higher speed side as compared with a ratio-change operating state obtained when the slippage has been foretold, to a desired transmission ratio, or by relatively rising a line pressure as compared with a line pressure level produced when the slippage has been foretold.
摘要翻译：在由于车辆减速而发生的带驱动无级变速器的降档期间，CVT控制器预示着当主带轮压力较小时，驱动带与主变速和次级带轮之间的滑动趋于发生比第一预定压力水平和初级皮带轮速度小于第一预定转速。当预先设置皮带滑移时，CVT控制器通过设定从预先设定的滑行时间起的设定时间段之前所计算出的实际传动比或相对较高的速度侧的传动比，来使主滑轮压力下降与通过预期滑动所获得的比变化操作状态相比，与预期的滑动所产生的线路压力水平相比，与期望的传动比相比，或者相对地增加管路压力。

72. 发明授权

US07205870B2 Electromagnetic relay 有权
标题翻译：电磁继电器
公开(公告)号：US07205870B2
公开(公告)日：2007-04-17
申请号：US10706854
申请日：2003-11-12
申请人： Hironori Sanada , Hiroyasu Tanaka , Hiroaki Yamazaki
发明人： Hironori Sanada , Hiroyasu Tanaka , Hiroaki Yamazaki
IPC分类号： H01H51/22
CPC分类号： H01H50/642
摘要： An electromagnetic relay having a moving contact plate and fixed contact plates juxtaposed with one another on a base. A moving iron plate is rotated during magnetization/demagnetization of a coil block put on the base to reciprocate a card in a horizontal direction. The moving contact plate is allowed to undergo elastic deformation so that a contact on the moving contact plate is brought into contact and out of contact with contacts on the fixed contact plates. The top corners of the moving contact plate is bent into an upper component and a lower components in such a fashion as to form card acceptance portions, and a distal end portion of the card is brought into contact with an inner surface of the card acceptance portions.
摘要翻译：一种电磁继电器，其具有在基座上彼此并置的移动接触板和固定接触板。移动铁板在放置在基座上的线圈块的磁化/退磁期间旋转，以使卡在水平方向上往复运动。允许移动接触板进行弹性变形，使得可动接触板上的接触与固定接触板上的触点接触并脱离接触。可移动接触板的顶角以形成卡接收部的方式弯曲成上部部件和下部部件，并且卡的远端部分与卡片接收部分的内表面接触。

73. 外观设计

USD516441S1 Vehicle recording device 失效
标题翻译：车载录音装置
公开(公告)号：USD516441S1
公开(公告)日：2006-03-07
申请号：US29205332
申请日：2004-05-13
申请人： Toshiji Iida , Miki Kinoshita , Hiroyasu Tanaka , Takashi Eguchi
设计人： Toshiji Iida , Miki Kinoshita , Hiroyasu Tanaka , Takashi Eguchi

74. 发明授权

US06879229B2 Electromagnetic relay 有权
标题翻译：电磁继电器
公开(公告)号：US06879229B2
公开(公告)日：2005-04-12
申请号：US10843212
申请日：2004-05-11
申请人： Hiroyasu Tanaka , Hironori Sanada , Hiroaki Yamasaki
发明人： Hiroyasu Tanaka , Hironori Sanada , Hiroaki Yamasaki
IPC分类号： H01H50/44 , H01H50/14 , H01H50/46 , H01H50/64 , H01H67/02
CPC分类号： H01H50/46 , H01H50/443 , H01H2050/446
摘要： The invention provides an electromagnetic relay excellent in insulating property and high in opening and closing characteristics and productivity.Therefore, a pair of pedestal portions for coil terminals are arranged in the outer circumferential edge portion of the lower flange portion of a spool. A coil drawing-out groove continuously connected to the upper face of the above pedestal portion for a coil terminal is formed along the outer circumferential edge portion of the above lower flange portion. A storing concave portion able to store a shading coil attached to a magnetic pole portion of an iron core projected from a central hole of the above spool is formed on the lower face of the above lower flange portion.
摘要翻译：本发明提供绝缘性好，开闭特性和生产率高的电磁继电器。因此，在线轴的下凸缘部的外周缘部配置一对线圈端子用的基座部。沿着上述下凸缘部的外周缘部形成有与线圈端子的上述基座部的上表面连续地连接的线圈拉出槽。在上述下凸缘部的下表面上形成有能够存储从上述卷轴的中心孔突出的铁芯的磁极部附着的遮光线圈的存放凹部。

75. 发明授权

US06537178B1 Lockup control device for transmission 失效
标题翻译：锁定控制装置用于传输
公开(公告)号：US06537178B1
公开(公告)日：2003-03-25
申请号：US09672692
申请日：2000-09-29
申请人： Satoshi Takizawa , Tateki Jozaki , Masato Koga , Masatoshi Akanuma , Mitsuru Watanabe , Shigeki Shimanaka , Hiroyasu Tanaka , Junya Takayama
发明人： Satoshi Takizawa , Tateki Jozaki , Masato Koga , Masatoshi Akanuma , Mitsuru Watanabe , Shigeki Shimanaka , Hiroyasu Tanaka , Junya Takayama
IPC分类号： B60K4122
CPC分类号： F16H61/143 , F16H59/72 , Y10T477/6395 , Y10T477/653 , Y10T477/73 , Y10T477/75
摘要： After an engine (1) has started, a controller (6) starts determining whether lockup should be prohibited or permitted based on the cooling water temperature of an engine (1) or the oil temperature of a transmission (2). Once it has been determined that lockup should be permitted, the controller (6) stops determining whether lockup should be prohibited or permitted until the next time the engine (1) is started. In this way, once the conditions for determining that lockup should be permitted hold, lockup prohibition or permission based on the engine cooling water temperature or transmission oil temperature is no longer determined, so repeat engaging and disengaging of the lockup clutch (5) due to fluctuations of engine cooling water temperature or transmission oil temperature, is prevented.
摘要翻译：在发动机（1）起动之后，控制器（6）基于发动机（1）的冷却水温度或变速器（2）的油温开始确定是否应禁止或允许锁定。一旦确定应该允许锁定，控制器（6）将停止确定是否应该禁止或允许锁定，直到下次发动机（1）启动为止。以这种方式，一旦确定了锁定的条件应被允许保持，则不再确定基于发动机冷却水温度或变速箱油温度的禁止禁止或许可，因此由于由于重新接合和分离锁止离合器防止发动机冷却水温度或变速箱油温度的波动。

76. 发明授权

US08916921B2 Non-volatile semiconductor storage device including a dielectric with low permittivity in memory cells arranged in a three dimensional manner 有权
标题翻译：非易失性半导体存储装置，其包括以三维方式布置的存储单元中的介电常数低的介质
公开(公告)号：US08916921B2
公开(公告)日：2014-12-23
申请号：US12705088
申请日：2010-02-12
申请人： Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Yoshiaki Fukuzumi , Yosuke Komori , Megumi Ishiduki
发明人： Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Yoshiaki Fukuzumi , Yosuke Komori , Megumi Ishiduki
IPC分类号： H01L29/792 , H01L27/115 , G11C16/04
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11582
摘要： A plurality of a first conductive layers are provided at a certain interval L in a vertical direction, with a dielectric sandwiched therebetween. The certain interval L is set so that the first dielectric has an equivalent oxide thickness DEOT that satisfies the following relation (1). Dsio2
摘要翻译：多个第一导电层在垂直方向上以一定间隔L设置，夹在其间的电介质。设定一定间隔L使得第一电介质具有满足以下关系式（1）的等效氧化物厚度DEOT。 Dsio2

77. 发明授权

US08659070B2 Semiconductor memory device and manufacturing method thereof 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08659070B2
公开(公告)日：2014-02-25
申请号：US12561451
申请日：2009-09-17
申请人： Hiroyasu Tanaka , Ryota Katsumata , Hideaki Aochi , Masaru Kido , Masaru Kito , Mitsuru Sato
发明人： Hiroyasu Tanaka , Ryota Katsumata , Hideaki Aochi , Masaru Kido , Masaru Kito , Mitsuru Sato
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/11548 , H01L27/11551 , H01L27/11556 , H01L27/11575 , H01L27/11578 , H01L27/11582 , H01L29/7881 , H01L29/7926
摘要： The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.
摘要翻译：本发明的半导体存储器件包括具有串联连接的多个电可再编程存储器单元的多个存储器串，具有列形半导体的存储器串，形成在柱状半导体周围的第一绝缘膜，电荷累积层形成在第一绝缘膜周围，形成在电荷累积膜周围的第二绝缘膜和围绕第二绝缘膜形成的多个电极，经由多个选择晶体管连接到存储器串的一端的位线，以及导电分别在存储器串的多个电极和不同的存储器串的多个电极中分别共享，其中导电层的每个端部在平行于位线的方向上形成为台阶形状。

78. 发明申请

US20140043120A1 ELECTROMAGNETIC RELAY 有权
标题翻译：电磁继电器
公开(公告)号：US20140043120A1
公开(公告)日：2014-02-13
申请号：US13989049
申请日：2011-03-23
申请人： Hiroyasu Tanaka , Yuji Kozai
发明人： Hiroyasu Tanaka , Yuji Kozai
IPC分类号： H01H51/06
CPC分类号： H01H51/06 , H01H50/14 , H01H50/548 , H01H50/641 , H01H51/2209 , H01H2051/2218
摘要： A electromagnetic relay including a plate-shaped pivoting piece (32), one end of which is supported in cantilever state, pivoted by a movable block (40), which reciprocates in the up-down direction on the basis of excitation and demagnetization of an electromagnet block (20) housed within a housing (10, 50), and causes a movable contact (34) formed on the other end of the plate-shaped pivoting piece (32) to make/break contact with an anchored contact (36) formed on the tip section of an anchored contact terminal (35). In particular, the one-end section of the plate-shaped pivoting piece (32) is supported pivotably in cantilever state by the upper end section of a movable contact terminal (31), with a support spring (33) comprising a conductive sheet spring material interposed therebetween.
摘要翻译：一种电磁继电器，包括其一端以悬臂状态支撑的板状枢转件（32），由可移动块（40）枢转，所述可移动块（40）在上下方向上往复运动，其基于激磁和退磁电容器块（20），其容纳在壳体（10,50）内，并且使得形成在所述板状枢转片（32）的另一端上的可动接触件（34）与锚定接触件（36）形成/断开接触，形成在锚定接触端子（35）的尖端部分上。特别地，板状枢转片（32）的一端部通过可动接触端子（31）的上端部以悬臂状可枢转地支撑，支撑弹簧（33）包括导电板弹簧介于其间的材料。

79. 发明授权

US08426976B2 Non-volatile semiconductor storage device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储装置及其制造方法
公开(公告)号：US08426976B2
公开(公告)日：2013-04-23
申请号：US12392636
申请日：2009-02-25
申请人： Megumi Ishiduki , Hideaki Aochi , Ryota Katsumata , Hiroyasu Tanaka , Masaru Kidoh , Masaru Kito , Yoshiaki Fukuzumi , Yosuke Komori , Yasuyuki Matsuoka
发明人： Megumi Ishiduki , Hideaki Aochi , Ryota Katsumata , Hiroyasu Tanaka , Masaru Kidoh , Masaru Kito , Yoshiaki Fukuzumi , Yosuke Komori , Yasuyuki Matsuoka
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/7926
摘要： A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a columnar semiconductor layer extending in a direction perpendicular to a substrate; a plurality of conductive layers formed at a sidewall of the columnar semiconductor layer via memory layers; and interlayer insulation layers formed above of below the conductive layers. A sidewall of the conductive layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes larger at lower position thereof than at upper position thereof. While, a sidewall of the interlayer insulation layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes smaller at lower position thereof than at upper position thereof.
摘要翻译：非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。每个存储器串包括：在垂直于衬底的方向上延伸的柱状半导体层; 多个导电层，经由存储层形成在所述柱状半导体层的侧壁处; 以及形成在导电层下方的层间绝缘层。形成面向柱状半导体层的导电层的侧壁，使得其与柱状半导体层的中心轴的距离在其下部位置比在其上部位置变大。同时，面对柱状半导体层的层间绝缘层的侧壁形成为倾斜，使得其在柱状半导体层的中心轴线处的距离在其下部位置处比在其上部位置变小。

80. 发明授权

US08426276B2 Non-volatile semiconductor storage device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储装置及其制造方法
公开(公告)号：US08426276B2
公开(公告)日：2013-04-23
申请号：US13365600
申请日：2012-02-03
申请人： Masaru Kito , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
发明人： Masaru Kito , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
IPC分类号： H01L21/8234
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11556
摘要： A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.
摘要翻译：非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。每个存储器串包括：在垂直于衬底的方向上延伸的第一柱状半导体层; 电荷累积层，经由第一气隙形成在第一柱状半导体层上，并积累电荷; 与电荷累积层接触的块绝缘层; 以及与块绝缘层接触的多个第一导电层。

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