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71. 发明授权

US07132453B2 Method of using prostacyclin to treat respiratory syncytial virus infections 失效
公开(公告)号：US07132453B2
公开(公告)日：2006-11-07
申请号：US10389295
申请日：2003-03-14
申请人： Ray Stokes Peebles, Jr. , Koichi Hashimoto , Barney S. Graham
发明人： Ray Stokes Peebles, Jr. , Koichi Hashimoto , Barney S. Graham
IPC分类号： A01N37/08 , A01N53/00 , A61K31/19 , A61K31/557
CPC分类号： A61K31/557
摘要： The present invention discloses methods and a kit for treating a respiratory syncytial virus infection. The method comprises providing an infection modulator, and administering a therapeutically effective amount of the infection modulator, wherein the respiratory syncytial virus infection is suppressed or precluded. The kit for suppressing a respiratory syncytial virus infection comprises an infection modulator, an applicator, and a set of instructions.

72. 发明申请

US20060086513A1 Impact tool 审中-公开
标题翻译：冲击工具
公开(公告)号：US20060086513A1
公开(公告)日：2006-04-27
申请号：US11254806
申请日：2005-10-21
申请人： Koichi Hashimoto , Hiroyuki Tsubakimoto , Hisashi Oda
发明人： Koichi Hashimoto , Hiroyuki Tsubakimoto , Hisashi Oda
IPC分类号： B25D11/00
CPC分类号： B25D11/064 , B25D11/062 , B25D16/00 , B25D2250/141 , B25D2250/371 , Y10T74/18056
摘要： An impact tool for simultaneously providing a rotational force and an impact force to an object has an output shaft rotated by a motor, hammer for intermittently providing an impact force to the output shaft, hammer holder for movably holding the hammer, and an impact force generator for generating the impact force from an output of the motor. An air chamber is formed between the hammer and the hammer holder such that a volume of the air chamber is variable in response to a position of the hammer relative to the hammer holder. In addition, the hammer receives a bias force generated in a direction toward the output shaft by a biasing device. This bias force effectively increases the impact force in cooperation with an air pressure caused by a volume change of the air chamber.
摘要翻译：用于同时向物体提供旋转力和冲击力的冲击工具具有由马达旋转的输出轴，用于间歇地向输出轴提供冲击力的锤，用于可移动地保持锤的锤保持器和冲击力发生器用于从电动机的输出产生冲击力。在锤和锤保持器之间形成空气室，使得空气室的体积响应于锤相对于锤保持器的位置是可变的。此外，锤子通过偏置装置接收在朝向输出轴的方向上产生的偏压力。与空气室的体积变化引起的空气压力协调，该偏压力有效地增加冲击力。

73. 发明授权

US06936510B2 Semiconductor device with self-aligned contact and its manufacture 有权
标题翻译：具有自对准触点的半导体器件及其制造
公开(公告)号：US06936510B2
公开(公告)日：2005-08-30
申请号：US10388454
申请日：2003-03-17
申请人： Kazuo Itabashi , Osamu Tsuboi , Yuji Yokoyama , Kenichi Inoue , Koichi Hashimoto , Wataru Futo
发明人： Kazuo Itabashi , Osamu Tsuboi , Yuji Yokoyama , Kenichi Inoue , Koichi Hashimoto , Wataru Futo
IPC分类号： H01L21/02 , H01L21/60 , H01L21/8242 , H01L27/105 , H01L27/108 , H01L27/10
CPC分类号： H01L27/10852 , H01L21/76897 , H01L27/105 , H01L27/10805 , H01L27/10817 , H01L28/91
摘要： A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.
摘要翻译：一种半导体存储器件，包括：覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜，形成在覆盖所述导电插塞的所述第二绝缘膜上，并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极，其形成为在所述位线上延伸，通过所述第三和第四绝缘膜与所述位线绝缘，并且通过所述第二孔电连接到所述导电插塞。

74. 发明授权

US06871589B2 Hybrid stencil printing apparatus, method for controlling hybrid stencil printing apparatus and computer readable recording medium recording program for the same 失效
标题翻译：混合模版印刷装置，用于控制混合模版印刷装置的方法和用于其的计算机可读记录介质记录程序
公开(公告)号：US06871589B2
公开(公告)日：2005-03-29
申请号：US10772342
申请日：2004-02-06
申请人： Koichi Hashimoto
发明人： Koichi Hashimoto
IPC分类号： B41J2/01 , B41L13/04 , B41L13/06 , B41F15/10 , B41M1/12
CPC分类号： B41L13/06
摘要： A hybrid stencil printing apparatus comprises: a stencil-making/printing unit configured to perforate a stencil sheet corresponding to a desired image, to wind the stencil sheet around an outer peripheral surface of a print drum, and to transfer a printing medium to the print drum with pressure and the printing medium is printed; an other-method image-formation unit configured to print the printing medium transferred on the same transfer passage as the stencil-making/printing unit according to a different printing method from the stencil-making/printing unit; and an image-formation unit selection-unit configured to input an original digital image, to determine a attributes of each image portion of the inputted original digital image, and to allocate each image portion selectively to the stencil-making/printing unit or the other-method image-formation unit based on the determination result.
摘要翻译：混合模版印刷设备包括：模版印刷单元，其被配置为对应于期望图像的孔版纸进行穿孔，将所述蜡纸卷绕在印刷鼓的外周表面上，并将印刷介质转印到所述印刷品上滚筒压力和打印介质打印; 另一方法图像形成单元，被配置为根据与所述模版/印刷单元不同的打印方法将与所述模版/印刷单元相同的传送通道上传送的打印介质打印; 以及图像形成单元选择单元，被配置为输入原始数字图像，以确定输入的原始数字图像的每个图像部分的属性，并且将每个图像部分选择性地分配给模板制作/打印单元或其他 - 方法图像形成单元。

75. 发明授权

US06815385B2 Tungsten sealing glass for use in a fluorescent lamp 失效
标题翻译：用于荧光灯的钨密封玻璃
公开(公告)号：US06815385B2
公开(公告)日：2004-11-09
申请号：US10619997
申请日：2003-07-15
申请人： Hiroyuki Kosokabe , Koichi Hashimoto
发明人： Hiroyuki Kosokabe , Koichi Hashimoto
IPC分类号： C03C802
CPC分类号： H01J61/36 , C03C3/091 , C03C3/093 , C03C3/095 , C03C3/108 , C03C8/24
摘要： A tungsten sealing glass for use in a fluorescent lamp, said glass having a composition of, by mass percent, 65-76% SiO2, 10-25% B2O3, 2-6% Al2O3, 0.5-5.8% MgO+CaO+SrO+BaO+ZnO, 3-8% Li2O+Na2O+K2O, 0.01-4% Fe2O3+CeO2, 0.1-5% TiO2, 0.1-10% TiO2+Sb2O3+PbO, and 0-2% ZrO2, wherein Na2O/(Na2O+K2O)≦0.6.
摘要翻译：一种用于荧光灯的钨密封玻璃，所述玻璃的质量百分比为65-76％SiO 2，10-25％B 2 O 3，2-6％Al 2 O 3，0.5-5.8％MgO + CaO + SrO + BaO + ZnO，3-8％Li2O + Na2O + K2O，0.01-4％Fe2O3 + CeO2，0.1-5％TiO2，0.1-10％TiO2 + Sb2O3 + PbO和0-2％ZrO2，其中Na2O /（Na2O + K2O）<= 0.6。

76. 发明授权

US06291064B1 Fiber reinforced thermoplastic resin molded product having a good surface appearance 失效
标题翻译：具有良好表面外观的纤维增强热塑性树脂成型体
公开(公告)号：US06291064B1
公开(公告)日：2001-09-18
申请号：US09353137
申请日：1999-07-14
申请人： Ryosaku Kadowaki , Koichi Hashimoto , Toshihiro Asai , Toshiaki Okumura
发明人： Ryosaku Kadowaki , Koichi Hashimoto , Toshihiro Asai , Toshiaki Okumura
IPC分类号： B32B516
CPC分类号： B29C45/0005 , B29B9/06 , B29B9/14 , B29C2045/0091 , Y10T428/249921 , Y10T428/249942 , Y10T428/26 , Y10T428/2913 , Y10T428/298
摘要： A fiber reinforced thermoplastic resin molded product having a good surface appearance; fiber reinforced thermoplastic resin pellets useful for making fiber reinforced thermoplastic resin molded products; and processes for making fiber reinforced thermoplastic resin molded products and processes for producing fiber reinforced thermoplastic resin pellets.
摘要翻译：具有良好表面外观的纤维增强热塑性树脂成型体; 用于制造纤维增强热塑性树脂成型品的纤维增强热塑性树脂颗粒; 以及制造纤维增强热塑性树脂成型体的方法和制造纤维增强热塑性树脂粒料的方法。

77. 发明授权

US5850096A Enhanced semiconductor integrated circuit device with a memory array and a peripheral circuit 失效
标题翻译：具有存储器阵列和外围电路的增强型半导体集成电路器件
公开(公告)号：US5850096A
公开(公告)日：1998-12-15
申请号：US394347
申请日：1995-02-23
申请人： Tetsuo Izawa , Hiroshi Goto , Koichi Hashimoto
发明人： Tetsuo Izawa , Hiroshi Goto , Koichi Hashimoto
IPC分类号： H01L21/768 , H01L29/00
CPC分类号： H01L21/76895
摘要： A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.
摘要翻译：一种制造半导体集成电路的方法包括以下步骤：在基板上提供导体膜，在导体膜上提供绝缘膜以形成层状结构，从对应于导体图案的第一部分选择性地去除绝缘膜，形成，同时在其第二部分上保留绝缘膜，其也对应于要形成的导体图案，图案化层叠结构以形成由侧壁限定的导体图案，为侧壁的每个侧壁提供侧壁绝缘在导体图案的第一部分上提供第一局部互连图案，使得第一局部互连图案在第一部分建立与导体图案的电连接，并且在第二部分上提供第二局部互连图案导体图案，使得第二局部互连图案穿过导体图案在第二部分，没有建立与其的电连接。

78. 发明授权

US5846885A Plasma treatment method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5846885A
公开(公告)日：1998-12-08
申请号：US702161
申请日：1996-08-23
申请人： Takeshi Kamata , Hiroshi Arimoto , Makoto Kosugi , Koichi Hashimoto
发明人： Takeshi Kamata , Hiroshi Arimoto , Makoto Kosugi , Koichi Hashimoto
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32082 , H01J37/32706 , H01L21/3065
摘要： In a plasma equipment and a plasma treatment method of a semiconductor device capable of reducing electron shading effect and also suppressing charge damage without affecting various characteristics in plasma process, a distance between a substrate bias electrode and A counter electrode is set less than two times as long as a mean free path of electron. High frequency electric power of 100 kHz to 1 MHz is supplied to the substrate bias electrode, while high frequency electric power of 1 MHz to 100 MHz is supplied to the counter electrode.
摘要翻译：在能够降低电子阴影效应并且还抑制电荷损伤而不影响等离子体处理中的各种特性的半导体器件的等离子体设备和等离子体处理方法中，衬底偏置电极和A对电极之间的距离设定为小于等于长达电子的平均自由路径。向基板偏置电极供给100kHz〜1MHz的高频电力，向对置电极供给1MHz〜100MHz的高频电力。

79. 发明授权

US5750316A Manufacture of semiconductor device using a-c anti-reflection coating 失效
标题翻译：使用a-c抗反射涂层制造半导体器件
公开(公告)号：US5750316A
公开(公告)日：1998-05-12
申请号：US404550
申请日：1995-03-15
申请人： Eiichi Kawamura , Teruyoshi Yao , Nobuhisa Naori , Koichi Hashimoto , Masaharu Kobayashi , Tadasi Oshima
发明人： Eiichi Kawamura , Teruyoshi Yao , Nobuhisa Naori , Koichi Hashimoto , Masaharu Kobayashi , Tadasi Oshima
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , G03C5/00
CPC分类号： G03F7/091
摘要： A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在光反射表面上形成透明氧化膜; 在透明膜的表面上形成抗反射性的a-c膜; 并且在抗反射膜的表面上涂覆光致抗蚀剂膜并对该光致抗蚀剂膜进行构图，其中选择抗反射膜和透明膜的厚度，以将驻波强度Isw = I delta / Iave设定为 0.2或更小，其中Iave是光致抗蚀剂膜中的光强度的平均值，I delta是光强度变化的幅度。可以在具有小尺寸变化和高精度的高反射性基板上形成精细图案。

80. 发明授权

US5747399A Glass for a fluorescent lamp 失效
标题翻译：玻璃用于荧光灯
公开(公告)号：US5747399A
公开(公告)日：1998-05-05
申请号：US711804
申请日：1996-09-10
申请人： Hiroyuki Kosokabe , Koichi Hashimoto
发明人： Hiroyuki Kosokabe , Koichi Hashimoto
IPC分类号： C03C3/091 , C03C3/108 , C03C4/08 , C03C3/093 , C03C4/12
CPC分类号： C03C3/091 , C03C3/108 , C03C4/085
摘要： In order to provide a glass which can be sealed to tungsten and Kovar and has a solarization resistance against the ultraviolet ray, and which is adaptable for use in a fluorescent lamp of a reduced size used as a light source for a lighting device in a liquid crystal display (13). The glass for use in a fluorescent lamp which consists essentially, by weight, of SiO.sub.2 55-79%, B.sub.2 O.sub.3 12.5-25%, Al.sub.2 O.sub.3, 0.5-10% Li.sub.2 O+Na.sub.2 O+K.sub.2 O 1-16%, ZrO.sub.2 0.01-5%, TiO.sub.2 +PbO+Sb.sub.2 O.sub.3 0.05-11%.
摘要翻译：为了提供可以与钨和科瓦尔密封的玻璃，并且具有抵抗紫外线的耐日晒性，并且适用于用作液体中的照明装置的光源的减小尺寸的荧光灯水晶显示器（13）。用于荧光灯的玻璃，其基本上由SiO 2 55-79％，B 2 O 3 12.5-25％，Al 2 O 3，0.5-10％Li 2 O + Na 2 O + K 2 O 1-16％，ZrO 2 0.01-5％ TiO2 + PbO + Sb2O3 0.05-11％。

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