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1. 发明授权

US5850096A Enhanced semiconductor integrated circuit device with a memory array and a peripheral circuit 失效
标题翻译：具有存储器阵列和外围电路的增强型半导体集成电路器件
公开(公告)号：US5850096A
公开(公告)日：1998-12-15
申请号：US394347
申请日：1995-02-23
申请人： Tetsuo Izawa , Hiroshi Goto , Koichi Hashimoto
发明人： Tetsuo Izawa , Hiroshi Goto , Koichi Hashimoto
IPC分类号： H01L21/768 , H01L29/00
CPC分类号： H01L21/76895
摘要： A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.
摘要翻译：一种制造半导体集成电路的方法包括以下步骤：在基板上提供导体膜，在导体膜上提供绝缘膜以形成层状结构，从对应于导体图案的第一部分选择性地去除绝缘膜，形成，同时在其第二部分上保留绝缘膜，其也对应于要形成的导体图案，图案化层叠结构以形成由侧壁限定的导体图案，为侧壁的每个侧壁提供侧壁绝缘在导体图案的第一部分上提供第一局部互连图案，使得第一局部互连图案在第一部分建立与导体图案的电连接，并且在第二部分上提供第二局部互连图案导体图案，使得第二局部互连图案穿过导体图案在第二部分，没有建立与其的电连接。

2. 发明授权

US5843841A Fabrication process of a semiconductor integrated circuit device having a local interconnect pattern and a semiconductor integrated circuit device fabricated according to such a fabrication process 失效
标题翻译：具有局部互连图案的半导体集成电路器件和根据这样的制造工艺制造的半导体集成电路器件的制造工艺
公开(公告)号：US5843841A
公开(公告)日：1998-12-01
申请号：US661011
申请日：1996-06-10
申请人： Tetsuo Izawa , Hiroshi Goto , Koichi Hashimoto
发明人： Tetsuo Izawa , Hiroshi Goto , Koichi Hashimoto
IPC分类号： H01L21/768 , H01L21/441
CPC分类号： H01L21/76895
摘要： A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.
摘要翻译：一种制造半导体集成电路的方法包括以下步骤：在基板上提供导体膜，在导体膜上提供绝缘膜以形成层状结构，从对应于导体图案的第一部分选择性地去除绝缘膜，形成，同时在其第二部分上保留绝缘膜，其也对应于要形成的导体图案，图案化层叠结构以形成由侧壁限定的导体图案，为侧壁的每个侧壁提供侧壁绝缘在导体图案的第一部分上提供第一局部互连图案，使得第一局部互连图案在第一部分建立与导体图案的电连接，并且在第二部分上提供第二局部互连图案导体图案，使得第二局部互连图案穿过导体图案在第二部分，没有建立与其的电连接。

3. 发明授权

US08915403B2 Fixed-amount discharge squeeze container 有权
标题翻译：定量卸料挤压容器
公开(公告)号：US08915403B2
公开(公告)日：2014-12-23
申请号：US13515084
申请日：2010-12-02
申请人： Shinichi Inaba , Susumu Fujinami , Hiroshi Goto
发明人： Shinichi Inaba , Susumu Fujinami , Hiroshi Goto
IPC分类号： B65D37/00 , G01F11/08 , B65D1/32 , B65D1/02
CPC分类号： B65D1/32 , B65D1/0223 , B65D2501/0036 , B65D2501/0081 , G01F11/082
摘要： A fixed-amount discharge squeeze container (10) which discharges a specific amount of content liquid from a discharge port by squeeze deformation of a container body (11) includes a squeeze-deformable plastic-made container body (11) and a squeeze operating portion (14) to perform squeeze operation is arranged at a barrel portion (13) of the container body (11). The squeeze operating portion (14) has a cross-sectional shape formed with a compression face portion (16) having a mountain-like section including a pair of inclined face portions (15) arranged along two faces intersecting obtusely and a compression support portion (18) having an arc-shaped section which is jointed integrally with foot parts (19b) of the compression face portion (16) respectively via an edge line portion (17). The compression face portion (16) is restricted so as not to be flipped into a valley-like shape after the inclined face portions (15) deforms until force to expand the distance between the bilateral foot parts (19b) vanishes.
摘要翻译：通过容器主体（11）的挤压变形从排出口排出特定量的内容液的固定排出挤压容器（10）包括可挤压变形的塑料制容器体（11）和挤压操作部（14）设置在容器主体（11）的筒部（13）处。挤压操作部分（14）具有横截面形状，其形成有具有山形部分的压缩面部分（16），该部分包括一对倾斜面部分（15），两个倾斜面部分沿着两个相互交叉的表面和压缩支承部分 18），其具有经由边缘线部分（17）分别与所述压缩面部分（16）的脚部（19b）整体接合的弧形部分。压缩面部（16）被限制为在倾斜面部（15）变形之后不会翻转成谷状形状，直到两侧脚部（19b）之间的距离扩大的力消失。

4. 发明授权

US08857962B2 Image forming method and image formed record 有权
标题翻译：图像形成方法和图像形成记录
公开(公告)号：US08857962B2
公开(公告)日：2014-10-14
申请号：US12863542
申请日：2009-01-16
申请人： Hiroshi Goto , Hisashi Habashi , Kiyofumi Nagai
发明人： Hiroshi Goto , Hisashi Habashi , Kiyofumi Nagai
IPC分类号： B41J2/01 , B41M5/00 , C09D11/54 , C09D11/00 , B41J2/21 , C09D11/322 , B41J11/00
CPC分类号： B41M5/0017 , B41J2/2107 , B41J11/0015 , B41M5/0011 , B41M5/0035 , C09D11/005 , C09D11/322 , C09D11/54
摘要： An image forming method of the present invention including applying a pretreatment liquid to a recording medium, and discharging an inkjet recording ink dropwise according to an image signal to form an image on the recording medium on which the pretreatment liquid has been applied, wherein the recording medium is regular paper which has no coat layer, the pretreatment liquid contains a cationic polymer compound, a surfactant A, water and a water-soluble organic acid, and the inkjet recording ink contains a water-dispersible colorant, a water-soluble organic solvent, a surfactant B, a penetrating agent and water, and wherein the pretreatment liquid has a static surface tension of 20 mN/m to 30 mN/m.
摘要翻译：本发明的图像形成方法包括将预处理液体施加到记录介质上，并根据图像信号逐滴喷射喷墨记录墨水，以在其上施加有预处理液体的记录介质上形成图像，其中记录介质是没有涂层的普通纸，预处理液含有阳离子高分子化合物，表面活性剂A，水和水溶性有机酸，喷墨记录油墨含有水分散性着色剂，水溶性有机溶剂表面活性剂B，渗透剂和水，其中预处理液体具有20mN / m至30mN / m的静态表面张力。

5. 发明授权

US08814340B2 Image forming method, and image formed matter 有权
标题翻译：图像形成方法，图像形成物
公开(公告)号：US08814340B2
公开(公告)日：2014-08-26
申请号：US13388074
申请日：2010-08-10
申请人： Hiroshi Goto
发明人： Hiroshi Goto
IPC分类号： B41J2/01 , B41M5/00 , B41J2/21 , B41M7/00 , C09D11/00
CPC分类号： B41M5/0017 , B41J2/2107 , B41M7/0018 , C09D11/322 , C09D11/38 , C09D11/54 , Y10T428/24901
摘要： An image forming method including: applying a pre-treatment liquid onto a coating layer provided on at least one surface of a support of a recording medium, jetting an inkjet ink onto the coating layer, onto which the pre-treatment liquid has been applied, so as to form an image, and applying or jetting a post-treatment liquid onto the coating layer, onto which the inkjet ink has been jetted, so as to form a transparent protective layer on the coating layer, wherein the inkjet ink contains the water-dispersible colorant, a water-soluble organic solvent, a surfactant, a penetrant and water, and wherein an amount of pure water transferred into the recording medium, provided with the coating layer, measured at a contact time of 100 ms with a dynamic scanning liquid absorptometer is 1 ml/m2 to 10 ml/m2, and the pre-treatment liquid contains a water-soluble aliphatic organic acid.
摘要翻译：一种图像形成方法，包括：将预处理液体施加到设置在记录介质的支撑体的至少一个表面上的涂层上，将喷墨油墨喷射到涂覆有预处理液体的涂层上，以便形成图像，并且将后处理液体施加或喷射到已经喷射了喷墨油墨的涂层上，以在涂层上形成透明保护层，其中喷墨油墨含有水可分散着色剂，水溶性有机溶剂，表面活性剂，渗透剂和水，并且其中转移到记录介质中的设置有涂层的纯水量在100ms的接触时间下用动态扫描液体吸收计为1ml / m 2至10ml / m 2，预处理液含有水溶性脂肪族有机酸。

6. 发明授权

US08703618B2 Method of forming micropattern, die formed by this method of forming micropattern, transfer method and micropattern forming method using this die 有权
标题翻译：形成微图案的方法，通过这种形成微图案的方法形成的模具，使用该模具的转印方法和微图案形成方法
公开(公告)号：US08703618B2
公开(公告)日：2014-04-22
申请号：US13555728
申请日：2012-07-23
申请人： Hiroshi Goto , Hiroshi Okuyama , Mitsunori Kokubo , Kentaro Ishibashi
发明人： Hiroshi Goto , Hiroshi Okuyama , Mitsunori Kokubo , Kentaro Ishibashi
IPC分类号： H01L21/311
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.
摘要翻译：通过以下步骤将微图案连接到基板（W1）：通过在转印步骤中蚀刻的第一组覆盖步骤和微图案形成步骤; 以及在转印步骤中通过蚀刻的第二组覆盖步骤和微图案形成步骤。

7. 发明申请

US20130341183A1 OXIDE SINTERED BODY AND SPUTTERING TARGET 有权
标题翻译：氧化物烧结体和溅射目标
公开(公告)号：US20130341183A1
公开(公告)日：2013-12-26
申请号：US14002768
申请日：2012-03-01
申请人： Hiroshi Goto , Yuki Iwasaki
发明人： Hiroshi Goto , Yuki Iwasaki
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/08 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.
摘要翻译：提供了一种氧化物烧结体和溅射靶，其对于制造用于显示装置的氧化物半导体膜是理想的。所提供的氧化物烧结体和溅射靶都具有高导电性和高相对密度，能够形成具有高载流子迁移率的氧化物半导体膜，并且特别地，在长期内具有优异的直流放电稳定性，即使通过直流溅射法使用也能够稳定地进行放电。本发明的氧化物烧结体是通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga的金属（M金属）的氧化物混合并烧结而得到的氧化物烧结体，In和Ta。当面内电阻率和深度方向的电阻率由高斯分布近似时，电阻率的分布系数σ为0.02以下。

8. 发明申请

US20130321525A1 INKJET TREATMENT LIQUID AND IMAGE FORMING METHOD USING TREATMENT LIQUID 有权
标题翻译：使用处理液的喷墨处理液体和图像形成方法
公开(公告)号：US20130321525A1
公开(公告)日：2013-12-05
申请号：US14000281
申请日：2012-02-17
申请人： Hidetoshi Fujii , Hiroshi Goto
发明人： Hidetoshi Fujii , Hiroshi Goto
IPC分类号： C09D11/00
CPC分类号： C09D11/005 , B41M5/0011 , B41M5/0017 , B41M7/0018 , C09D11/322 , C09D11/40 , C09D11/54
摘要： To provide an inkjet treatment liquid, containing: a water-soluble coagulant; a water-soluble organic solvent; water; and an amide compound represented by the following general formula: where R is a C1-C6 alkyl group.
摘要翻译：提供喷墨处理液，含有：水溶性凝结剂; 水溶性有机溶剂; 水; 和由以下通式表示的酰胺化合物：其中R是C1-C6烷基。

9. 发明授权

US08598580B2 Wiring structure, display apparatus, and semiconductor device 有权
标题翻译：接线结构，显示装置和半导体器件
公开(公告)号：US08598580B2
公开(公告)日：2013-12-03
申请号：US13639028
申请日：2011-03-30
申请人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
发明人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L29/16
CPC分类号： H01L23/53238 , H01L21/28518 , H01L21/28556 , H01L21/3211 , H01L21/76867 , H01L27/124 , H01L29/458 , H01L29/4958 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.
摘要翻译：公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。在半导体层和Cu合金层之间包含层叠结构。层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

10. 发明授权

US08595864B2 Air bag jacket 有权
标题翻译：气袋夹克
公开(公告)号：US08595864B2
公开(公告)日：2013-12-03
申请号：US12056981
申请日：2008-03-27
申请人： Masayoshi Orita , Hiroshi Goto , Yuki Kobayashi , Hiroyuki Kikuchi
发明人： Masayoshi Orita , Hiroshi Goto , Yuki Kobayashi , Hiroyuki Kikuchi
IPC分类号： A41D1/04
CPC分类号： A41D13/018 , A41D2600/102
摘要： An air bag jacket includes a first portion corresponding to a breast and an upper back portion of a user in a wearing state and a second portion corresponding to a belly and a waist of the user in a wearing state. A recessed portion is cut upwardly from a skirt is formed in the second portion at a position corresponding to either a right or left side of the user. An inflator is arranged on the inside of the recessed portion.
摘要翻译：气囊护套包括对应于佩戴状态的使用者的乳房和上后部的第一部分和对应于穿着状态的使用者的腹部和腰部的第二部分。从裙部向上切割的凹部在第二部分中形成在对应于使用者的右侧或左侧的位置处。在凹部的内侧配置充气机。

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