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71. 发明申请

US20060152734A1 Temperature/thickness measuring apparatus, temperature/thickness measuring method, temperature/thickness measuring system, control system and control method 有权
标题翻译：温度/厚度测量装置，温度/厚度测量方法，温度/厚度测量系统，控制系统和控制方法
公开(公告)号：US20060152734A1
公开(公告)日：2006-07-13
申请号：US11325504
申请日：2006-01-05
申请人： Tomohiro Suzuki , Chishio Koshimizu
发明人： Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01B9/02
CPC分类号： G01B11/0675
摘要： A measuring apparatus comprises a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a drive means for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a light receiving means for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.
摘要翻译：测量装置包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分束器，参考反射镜，其中来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光程长度的驱动装置和用于测量从参考反射镜反射的参考光的干涉的光接收装置当来自分路器的参考光被照射到参考反射镜时，作为来自分离器的测量光从多个测量目标物反射的测量光束朝向测量目标辐射，以便透射通过测量目标。

72. 发明申请

US20060037703A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037703A1
公开(公告)日：2006-02-23
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

73. 发明授权

US06214162B1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06214162B1
公开(公告)日：2001-04-10
申请号：US09342213
申请日：1999-06-29
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： This invention relates to a plasma generating apparatus having a plasma generating electrode, and improves the controllability of the etching selectivity and the etching shape. In a plasma processing apparatus, an electrode is located in a processing chamber. A plasma generating RF power is supplied from a plasma generating RF power supply to the electrode. A to-be-processed object W is mounted on a lower electrode located in the processing chamber. RF powers having their phases adjusted to predetermined values are applied to the plasma generating electrode and the lower electrode. RF powers of a continuous wave or RF power pulse trains can be used as the RF powers.
摘要翻译：本发明涉及一种具有等离子体产生电极的等离子体产生装置，并提高了蚀刻选择性和蚀刻形状的可控性。在等离子体处理装置中，电极位于处理室中。从等离子体产生RF电源向电极供应等离子体产生RF功率。待处理物体W安装在位于处理室中的下电极上。将其相位调整到预定值的RF功率施加到等离子体产生电极和下电极。连续波或射频功率脉冲串的射频功率可以用作射频功率。

74. 发明授权

US05997687A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US05997687A
公开(公告)日：1999-12-07
申请号：US907418
申请日：1997-08-07
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32706
摘要： This invention relates to optimization of processing with a pulse plasma. The frequency at the initial period of rise of each pulse is shifted higher than that in the steady state in accordance with the ON timing of a plasma excitation RF power pulse. With this setting, the RF power pulse is matched to a high resonance frequency used when no plasma exists in a processing chamber, or a plasma is weak, thereby enhancing the ignition performance of the pulse plasma. In this invention, a biasing RF power pulse is controlled to adjust the maximum, minimum, or average value of a potential on the processing surface of a substrate to be a predetermined value or less. A means for this control includes a means for controlling the output waveform of the biasing RF power pulse, and a means for controlling the frequency of the biasing RF power pulse. By this control, the damage to the substrate due to collision of ions with the substrate is reduced, and uniform plasma processing is performed.
摘要翻译：本发明涉及用脉冲等离子体进行处理的优化。根据等离子体激发RF功率脉冲的导通时间，每个脉冲的初始上升时间的频率比稳态的频率高。利用这种设置，RF功率脉冲与在处理室中不存在等离子体时所使用的高谐振频率相匹配，或等离子体较弱，从而提高脉冲等离子体的点火性能。在本发明中，控制偏置RF功率脉冲以将衬底的处理表面上的电位的最大值，最小值或平均值调整为预定值或更小。用于该控制的装置包括用于控制偏置RF功率脉冲的输出波形的装置，以及用于控制偏置RF功率脉冲的频率的装置。通过该控制，由于离子与衬底的碰撞而对衬底的损伤降低，并且进行均匀的等离子体处理。

75. 发明授权

US5928532A Method of detecting end point of plasma processing and apparatus for the same 失效
标题翻译：检测等离子体处理终点的方法及其设备
公开(公告)号：US5928532A
公开(公告)日：1999-07-27
申请号：US962736
申请日：1997-11-03
申请人： Chishio Koshimizu , Susumu Saito
发明人： Chishio Koshimizu , Susumu Saito
IPC分类号： G01N21/68 , H01J37/32 , B23K10/00 , B44C1/22 , G01N21/00
CPC分类号： H01J37/32935 , G01N21/68 , H01J37/32954 , H01J37/32963
摘要： When processing using a plasma is performed for an object to be processed, a photodetecting unit sequentially detects emission of two active species having specific wavelengths in a designated period during the processing. On the basis of the emission detection information of the two active species, two approximate expressions of linear functions are obtained in the relationship between the emission intensity and time. The ratio of the two approximate expressions of linear functions and the derivative of the ratio are obtained to form a graph in which the ratio is plotted on the abscissa, the derivative of the ratio is plotted on the ordinate, and the intersection between the average value of the ratio and the average value of the derivative of the ratio is the origin. The ratio and the derivative of the ratio are obtained by using the emission detection information of the two active species during the processing after the designated period. The end point of the plasma processing is determined when the position of the ratio and the derivative of the ratio thus obtained deviates from a predetermined region in the graph.
摘要翻译：当对待处理对象进行使用等离子体的处理时，光检测单元依次检测在处理期间的指定期间内具有特定波长的两种活性物质的发射。基于两种活性物质的发射检测信息，在发射强度和时间的关系中获得两个线性函数的近似表达式。获得线性函数的两个近似表达式和比率导数之间的比率，以形成其中横坐标绘制比率的曲线图，该比率的导数绘制在纵坐标上，平均值之间的交点的比率和该比率的导数的平均值是起源。通过在指定时间段之后的处理期间使用两种活性物质的发射检测信息来获得该比率的比率和导数。当比例的位置和由此获得的比率的导数偏离图中的预定区域时，确定等离子体处理的终点。

76. 发明授权

US4862383A Ultrasonic inspection apparatus 失效
标题翻译：超声波检测仪
公开(公告)号：US4862383A
公开(公告)日：1989-08-29
申请号：US919766
申请日：1986-10-16
申请人： Chishio Koshimizu , Yasuo Hayakawa , Toshio Nonaka , Sakae Takeda
发明人： Chishio Koshimizu , Yasuo Hayakawa , Toshio Nonaka , Sakae Takeda
IPC分类号： G01N29/04 , G01N29/11 , G01N29/38 , G01N29/48
CPC分类号： G01N29/48 , G01N29/0645 , G01N29/11 , G01N29/38 , G01N29/4454 , G01N2291/044 , G01N2291/2697
摘要： In an ultrasonic inspection method and apparatus for inspecting the presence or absence of a defect in an object to be inspected by receiving as an RF signal a reflection beam of an ultrasonic beam emitted from a probe to the object and displaying data of the RF signal on a display unit, a maximum value indicative of a positive peak of the RF signal is detected, a maximum absolute value indicative of a negative peak of the RF signal is detected, a computation is performed for comparing in magnitude the maximum value indicative of the positive peak with the maximum absolute value indicative of the negative peak, and a computed value is displayed on the display unit so that the presence or absence of a phase inversion of the RF signal may be judged for deciding the presence or absence of a defect in the object.
摘要翻译：在超声波检查方法和装置中，通过接收作为RF信号的从探头发射的超声波束的反射光束和对RF信号的数据进行检测来检查被检查物体中是否存在缺陷检测到显示单元，表示RF信号的正峰值的最大值，检测到表示RF信号的负峰值的最大绝对值，进行用于比较大小的表示正值的最大值的运算具有指示负峰值的最大绝对值的峰值，并且计算值被显示在显示单元上，使得RF信号的相位反转的存在或不存在可以被判断用于确定是否存在缺陷的存在目的。

77. 发明授权

US09313872B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09313872B2
公开(公告)日：2016-04-12
申请号：US12913441
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
发明人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
IPC分类号： C23C16/00 , H01L21/306 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

78. 发明授权

US09253867B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09253867B2
公开(公告)日：2016-02-02
申请号：US12913183
申请日：2010-10-27
申请人： Yohei Yamazawa , Masashi Saito , Kazuki Denpoh , Chishio Koshimizu , Jun Yamawaku
发明人： Yohei Yamazawa , Masashi Saito , Kazuki Denpoh , Chishio Koshimizu , Jun Yamawaku
IPC分类号： H01L21/306 , C23C16/00 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H05H1/46
摘要： A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。

79. 发明授权

US09019505B2 Temperature control system including sub-chiller 有权
标题翻译：温控系统包括冷水机组
公开(公告)号：US09019505B2
公开(公告)日：2015-04-28
申请号：US13240274
申请日：2011-09-22
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
IPC分类号： G01B9/02 , H01L21/67 , G01J5/58 , G01J9/02
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
摘要翻译：温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

80. 发明授权

US08741097B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08741097B2
公开(公告)日：2014-06-03
申请号：US12913162
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32146 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

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