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71. 发明授权

US09175382B2 High metal ionization sputter gun 有权
标题翻译：高金属电离溅射枪
公开(公告)号：US09175382B2
公开(公告)日：2015-11-03
申请号：US13281316
申请日：2011-10-25
申请人： Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
发明人： Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
IPC分类号： C23C14/34 , H01J37/34 , C23C14/35
CPC分类号： C23C14/345 , C23C14/3485 , C23C14/352 , H01J37/3402 , H01J37/3405 , H01J37/3458 , H01J37/3467
摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.
摘要翻译：在本发明的一个方面，提供一种处理室。该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。多个溅射枪中的每一个耦合到第一电源。第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。脉冲电源的占空比小于30％。包括设置在距离多个溅射枪一定距离的衬底支撑件。衬底支撑件耦合到第二电源。第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。还包括执行沉积工艺的方法。

72. 发明授权

US08726838B2 Combinatorial plasma enhanced deposition and etch techniques 有权
标题翻译：组合等离子体增强沉积和蚀刻技术
公开(公告)号：US08726838B2
公开(公告)日：2014-05-20
申请号：US12963995
申请日：2010-12-09
申请人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
发明人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
IPC分类号： C23C16/50 , C23C16/509 , H01L21/3065 , C23C16/455 , C23C16/02 , C23C16/458 , H01L21/67 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/0227 , C23C16/44 , C23C16/45523 , C23C16/45525 , C23C16/45536 , C23C16/45548 , C23C16/45565 , C23C16/45574 , C23C16/4586 , C23C16/509 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32779 , H01L21/3065 , H01L21/67069
摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
摘要翻译：根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于所述至少两个电极。

73. 发明授权

US08614787B2 High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates 失效
公开(公告)号：US08614787B2
公开(公告)日：2013-12-24
申请号：US12952855
申请日：2010-11-23
申请人： Yun Wang , Tony P. Chiang , Chi-I Lang
发明人： Yun Wang , Tony P. Chiang , Chi-I Lang
IPC分类号： G01N21/00
CPC分类号： G01R31/26 , G01N21/55 , G01R31/2607 , H02S50/10
摘要： Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.

74. 发明授权

US08580344B2 Stamp usage to enhance surface layer functionalization and selectivity 有权
标题翻译：印章使用，以增强表面层的功能化和选择性
公开(公告)号：US08580344B2
公开(公告)日：2013-11-12
申请号：US12405218
申请日：2009-03-16
申请人： Nikhil D. Kalyankar , Zachary Fresco , Chi-I Lang
发明人： Nikhil D. Kalyankar , Zachary Fresco , Chi-I Lang
IPC分类号： G01N31/00 , G01N31/20 , G01N31/22 , B01L3/00
CPC分类号： C40B60/08 , B01J19/0046 , B01J2219/00317 , B01J2219/00364 , B01J2219/00376 , B01J2219/00382 , B01J2219/00427 , B01J2219/00527 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00659 , B01J2219/00702 , C40B50/18
摘要： This disclosure provides methods, devices and systems for using a stamp to enhance selectivity between surface layers of a substrate, and to facilitate functionalizing selected layers. An array of flat stamps may be used to concurrently stamp multiple regions of a substrate to transfer one or more substances to the topmost layer or layers of the substrate. If desired, the affected regions of the substrate may be isolated from each other through the use of a reactor plate that, when clamped to the substrate's surface, forms reaction wells in the area of stamping. The stamp area can, if desired, be configured for stamping the substrate after the reactor plate has been fitted, with the individual stamps sized and arranged in a manner that permits stamping within each reaction well. If applied in a combinatorial process, a robotic process may be used to transfer multiple combinations of contact substances and processing chemicals to each reaction well to perform many concurrent processes upon a single substrate (e.g., a single coupon). The methods, devices and systems provided facilitate semiconductor design, optimization and qualification, and may be adapted to production manufacturing.
摘要翻译：本公开提供了使用印模来增强基底的表面层之间的选择性并促进官能化所选择的层的方法，装置和系统。可以使用平面阵列阵列来同时印刷衬底的多个区域以将一种或多种物质转移到衬底的最上层或多层。如果需要，可以通过使用反应器板将基材的受影响区域彼此隔离，当将其夹在基材表面上时，在冲压区域中形成反应孔。如果需要，邮票区域可以被配置用于在安装反应器板之后冲压衬底，各个邮票的大小和布置方式允许在每个反应井内冲压。如果应用于组合过程中，机器人过程可用于将接触物质和加工化学品的多种组合转移到每个反应井，以在单个底物（例如，单一试样）上进行许多并行处理。提供的方法，设备和系统有助于半导体设计，优化和鉴定，并可适用于生产制造。

75. 发明申请

US20130101750A1 High Metal Ionization Sputter Gun 有权
标题翻译：高金属电离溅射枪
公开(公告)号：US20130101750A1
公开(公告)日：2013-04-25
申请号：US13281316
申请日：2011-10-25
申请人： Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
发明人： Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/3485 , C23C14/352 , H01J37/3402 , H01J37/3405 , H01J37/3458 , H01J37/3467
摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.
摘要翻译：在本发明的一个方面，提供一种处理室。该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。多个溅射枪中的每一个耦合到第一电源。第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。脉冲电源的占空比小于30％。包括设置在距离多个溅射枪一定距离的衬底支撑件。衬底支撑件耦合到第二电源。第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。还包括执行沉积工艺的方法。

76. 发明授权

US08334015B2 Vapor based combinatorial processing 有权
标题翻译：气相组合处理
公开(公告)号：US08334015B2
公开(公告)日：2012-12-18
申请号：US12013759
申请日：2008-01-14
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/04
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.
摘要翻译：提供组合处理室和方法。在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同。通过多个流动产生不同处理的分离区域。

77. 发明申请

US20120244644A1 System and Method for Increasing Productivity of Organic Light Emitting Diode Material Screening 有权
标题翻译：提高有机发光二极管材料筛选生产率的系统和方法
公开(公告)号：US20120244644A1
公开(公告)日：2012-09-27
申请号：US13072083
申请日：2011-03-25
申请人： Yun Wang , Tony P. Chiang , Chi-I Lang
发明人： Yun Wang , Tony P. Chiang , Chi-I Lang
IPC分类号： H01L21/66
CPC分类号： H01L51/0031 , H01L51/56
摘要： A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.
摘要翻译：提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

78. 发明申请

US20120090545A1 VAPOR BASED COMBINATORIAL PROCESSING 有权
标题翻译：基于蒸汽的组合加工
公开(公告)号：US20120090545A1
公开(公告)日：2012-04-19
申请号：US13332813
申请日：2011-12-21
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/455
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.
摘要翻译：提供组合处理室和方法。在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同。通过多个流动产生不同处理的分离区域。

79. 发明申请

US20120052694A1 TECHNIQUES TO IMPROVE CHARACTERISTICS OF PROCESSED SEMICONDUCTOR SUBSTRATES 有权
标题翻译：提高加工半导体基板特性的技术
公开(公告)号：US20120052694A1
公开(公告)日：2012-03-01
申请号：US13289279
申请日：2011-11-04
申请人： Anh Ngoc Duong , Chi-I Lang
发明人： Anh Ngoc Duong , Chi-I Lang
IPC分类号： H01L21/31
CPC分类号： H01L21/288 , H01L21/02074 , H01L21/7684 , H01L21/76849
摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
摘要翻译：描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖在引入氢醌之后，在衬底的导电区域上方。

80. 发明授权

US07888233B1 Flowable film dielectric gap fill process 有权
标题翻译：可流动薄膜电介质间隙填充工艺
公开(公告)号：US07888233B1
公开(公告)日：2011-02-15
申请号：US12411243
申请日：2009-03-25
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/4757
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
摘要翻译：本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。可流动膜提供一致的，无空隙的间隙填充。然后将膜转化成固体电介质材料。以这种方式，用固体电介质材料填充衬底上的间隙。根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

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