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71. 发明授权

US06309982B1 Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agent 有权
标题翻译：通过用还原剂掺杂无机介电层来最小化铜扩散的方法
公开(公告)号：US06309982B1
公开(公告)日：2001-10-30
申请号：US09803188
申请日：2001-03-12
申请人： Simon Chooi , Yi Xu , Yakub Aliyu , Mei-Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Ho
发明人： Simon Chooi , Yi Xu , Yakub Aliyu , Mei-Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Ho
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , H01L21/02126 , H01L21/02274 , H01L21/3115 , H01L21/31612 , H01L21/31625
摘要： A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or both) during plasma enhanced chemical vapor deposition. The resulting doped inorganic dielectric layer can reduce copper diffusion without a barrier layer reducing fabrication cost and cycle time, as well as reducing RC delay.
摘要翻译：一种通过在等离子体增强化学气相沉积期间通过用还原剂（例如磷，硫或两者）掺杂无机介电层来减少铜扩散到与铜结构相邻的无机电介质层中的方法。所得到的掺杂无机介电层可以减少铜扩散而无需阻挡层降低制造成本和循环时间，并减少RC延迟。

72. 发明授权

US06265321B1 Air bridge process for forming air gaps 有权
标题翻译：用于形成气隙的气桥过程
公开(公告)号：US06265321B1
公开(公告)日：2001-07-24
申请号：US09550264
申请日：2000-04-17
申请人： Simon Chooi , Mei-Sheng Zhou , Yi Xu
发明人： Simon Chooi , Mei-Sheng Zhou , Yi Xu
IPC分类号： H01L2100
CPC分类号： H01L21/7682 , H01L21/76807
摘要： A method for reducing RC delay in integrated circuits by lowering the dielectric constant of the intermetal dielectric material between metal interconnects or metal damascene interconnects is described. The dielectric constant of the intermetal dielectric is lowered by introducing air into the intermetal dielectric between metal interconnections. An air bridge comprising a porous material, preferably amorphous silicon, porous silicon oxide, or porous silsesquioxane, is deposited over a layer containing a reactive organic material. An oxygen plasma treatment or an anisotropic etching through the pores in the air bridge layer removes at least a portion of the reactive material, leaving air plugs within the intermetal dielectric.
摘要翻译：描述了通过降低金属互连或金属镶嵌互连之间的金属间电介质材料的介电常数来减小集成电路中的RC延迟的方法。通过在金属互连之间的金属间电介质中引入空气来降低金属间电介质的介电常数。包括多孔材料，优选非晶硅，多孔氧化硅或多孔倍半硅氧烷的空气桥被沉积在含有反应性有机材料的层上。通过空气桥接层中的孔的氧等离子体处理或各向异性蚀刻去除至少一部分反应性材料，从而将空气塞留在金属间电介质内。

73. 发明授权

US06261955B1 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes 失效
标题翻译：应用气相HFACAC基化合物用于铜去污和清洗过程
公开(公告)号：US06261955B1
公开(公告)日：2001-07-17
申请号：US09618262
申请日：2000-07-18
申请人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02046 , C23F1/12 , H01L21/02079 , Y10S438/906
摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
摘要翻译：实现了集成电路制造中有效的铜去污方法。蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

74. 发明授权

US06132521A Cleaning metal surfaces with alkyldione peroxides 失效
标题翻译：用烷基二酮过氧化物清洗金属表面
公开(公告)号：US06132521A
公开(公告)日：2000-10-17
申请号：US467132
申请日：1999-12-20
申请人： Subhash Gupta , Simon Chooi , Mei Sheng Zhou , Paul Ho
发明人： Subhash Gupta , Simon Chooi , Mei Sheng Zhou , Paul Ho
IPC分类号： C11D3/20 , C11D3/39 , C23G5/032 , B08B3/04
CPC分类号： C11D3/2072 , C11D3/2003 , C11D3/2093 , C11D3/3945 , C23G5/032 , Y10S134/902
摘要： A method of cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware without corroding or damaging the equipment parts and surfaces in the event of wafer breakage and non-wafer breakage is described. A solution includes an alkyldione peroxide, a stabilizing agent, and alcohols is used to oxidize the metal and form soluble complexes which are removed by the cleaning solution. Also, a alkyldione peroxide solution for cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware in the event of wafer breakage and non-wafer breakage is provided.
摘要翻译：描述了从设备硬件表面清除元素铜，钴或镍的方法，而不会在晶片断裂和非晶片断裂的情况下腐蚀或损坏设备部件和表面。溶液包括烷基二酮过氧化物，稳定剂，醇用于氧化金属并形成由清洗溶液除去的可溶性络合物。此外，提供了在晶片断裂和非晶片断裂的情况下从设备硬件的表面清除元素铜，钴或镍的烷基二氧化碳过氧化物溶液。

75. 发明授权

US6117777A Chemical mechanical polish (CMP) endpoint detection by colorimetry 失效
标题翻译：化学机械抛光（CMP）通过比色法终点检测
公开(公告)号：US6117777A
公开(公告)日：2000-09-12
申请号：US902847
申请日：1997-07-30
申请人： Mei-Sheng Zhou , Simon Chooi
发明人： Mei-Sheng Zhou , Simon Chooi
IPC分类号： B24B37/04 , B24B49/12 , H01L21/3105 , H01L21/66 , H01L21/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , H01L21/31053 , H01L22/26
摘要： A method for fabricating a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a planarizable layer. The planarizable layer has a lower residual portion of the planarizable layer and an upper removable portion of the planarizable layer, where one of the lower residual portion of the planarizable layer and the upper removable portion of the planarizable layer has a colorant incorporated therein. The colorant is positioned at a location which assists in monitoring and controlling an endpoint of a chemical mechanical polish (CMP) planarizing method employed in planarizing the planarizable layer. There is then planarized through the chemical mechanical polish (CMP) planarizing method the planarizable layer while employing the colorant concentration to determine the endpoint of the chemical mechanical polish (CMP) planarizing method.
摘要翻译：一种用于制造微电子制造的方法。首先提供了在微电子制造中使用的衬底。然后在衬底上形成可平面化的层。可平面化层具有可平坦化层的较低残余部分和可平面化层的上部可去除部分，其中可平面化层的下部剩余部分和可平面化层的上部可去除部分中的一个具有并入其中的着色剂。着色剂位于有助于监测和控制用于平坦化可平面化层的化学机械抛光（CMP）平面化方法的端点的位置。然后通过化学机械抛光（CMP）平面化方法将平坦化层平坦化，同时使用着色剂浓度来确定化学机械抛光（CMP）平面化方法的终点。

76. 发明授权

US6040243A Method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion 有权
标题翻译：使用反向阻挡金属方案形成铜镶嵌互连以消除铜扩散的方法
公开(公告)号：US6040243A
公开(公告)日：2000-03-21
申请号：US398292
申请日：1999-09-20
申请人： Jianxun Li , Simon Chooi , Mei-Sheng Zhou
发明人： Jianxun Li , Simon Chooi , Mei-Sheng Zhou
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76844 , H01L21/76805 , H01L21/76807 , H01L21/76831
摘要： A method of fabricating damascene vias has been achieved. Diffusion of copper into dielectric layers due to overetch of the passivation layer is eliminated by a barrier layer. The method can be used to form dual damascene interconnects. Copper traces through an isolation layer are provided overlying a semiconductor substrate. A passivation layer is deposited overlying the copper traces and the isolation layer. A dielectric layer is deposited. A cap layer is deposited. The cap layer and the dielectric layer are patterned to expose the top surface of the passivation layer and to form trenches for the damascene vias. A barrier layer is deposited overlying the passivation layer, the dielectric layer, and the cap layer. The barrier layer is etched though to expose the top surfaces of the cap layer and the passivation layer. The barrier layer isolates the sidewalls of the trenches. The passivation layer is etched through to complete damascene vias. The barrier layer prevents copper sputtering onto the dielectric layer during the step of etching through the passivation layer.
摘要翻译：已经实现了制造大马士革过孔的方法。通过阻挡层消除由于钝化层的过蚀刻而将铜扩散到电介质层中。该方法可用于形成双镶嵌互连。通过隔离层的铜迹线设置在半导体衬底上。沉积在铜迹线和隔离层上的钝化层。沉积介电层。沉积盖层。将盖层和电介质层图案化以暴露钝化层的顶表面并形成用于大马士革过孔的沟槽。覆盖钝化层，电介质层和覆盖层的阻挡层被沉积。蚀刻阻挡层以暴露盖层和钝化层的顶表面。阻挡层隔离沟槽的侧壁。蚀刻钝化层以完成大马士革过孔。在蚀刻通过钝化层的步骤期间，阻挡层防止铜溅射到电介质层上。

77. 发明授权

US5792692A Method of fabricating a twin hammer tree shaped capacitor structure for a dram device 失效
标题翻译：制造用于电容器的双锤树形电容器结构的方法
公开(公告)号：US5792692A
公开(公告)日：1998-08-11
申请号：US912323
申请日：1997-08-18
申请人： Jian-Xun Li , Simon Chooi , Mei-Sheng Zhou
发明人： Jian-Xun Li , Simon Chooi , Mei-Sheng Zhou
IPC分类号： H01L21/02 , H01L21/311 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L27/10852 , H01L21/31116 , H01L27/10817 , H01L28/87 , H01L28/91 , H01L28/88
摘要： A process for fabricating a large surface area, storage node structure, for a DRAM device, has been developed. The storage node structure is comprised of a lower level polysilicon structure, exhibiting a "twin hammer tree" shape, and connected to an upper polysilicon level, exhibiting a "branch" type shape. The fabrication process used to create this storage node structure, features various deposition procedures, used for insulator and polysilicon layers, and various anisotropic and isotropic, dry etch procedures, as well as wet etch procedures, used for creation of the "twin hammer tree" shaped structure.
摘要翻译：已经开发了用于制造用于DRAM器件的大表面积，存储节点结构的工艺。存储节点结构包括呈现“双锤树”形状的较低级多晶硅结构，并连接到上多晶硅层，呈现“分支”型形状。用于创建这种存储节点结构的制造工艺，具有用于绝缘体和多晶硅层的各种沉积工艺以及用于创建“双锤树”的各种各向异性和各向同性的干蚀刻工艺以及湿式蚀刻工艺，形结构。

78. 发明申请

US20050090037A1 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 审中-公开
公开(公告)号：US20050090037A1
公开(公告)日：2005-04-28
申请号：US10978198
申请日：2004-10-29
申请人： Yakub Aliyu , Simon Chooi , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy
发明人： Yakub Aliyu , Simon Chooi , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

79. 发明申请

US20050124767A1 Novel poly(arylene ether) dielectrics 有权
公开(公告)号：US20050124767A1
公开(公告)日：2005-06-09
申请号：US11028741
申请日：2005-01-04
申请人： Christopher Lim , Siu Ng , Hardy Chan , Simon Chooi , Mei Zhou
发明人： Christopher Lim , Siu Ng , Hardy Chan , Simon Chooi , Mei Zhou
IPC分类号： C08G65/40 , H01L21/312 , H01L21/768 , C08G65/48 , C08L71/12 , H01L21/31 , H01L21/469 , H01L21/4763 , H01L23/58
CPC分类号： C08G65/40 , C08G65/4006 , Y10T428/17 , Y10T428/31678
摘要： The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

80. 发明申请

US20050090102A1 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US20050090102A1
公开(公告)日：2005-04-28
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

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