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71. 发明授权

US08242897B2 Vehicle environment monitoring apparatus 有权
标题翻译：车辆环境监测仪
公开(公告)号：US08242897B2
公开(公告)日：2012-08-14
申请号：US12608321
申请日：2009-10-29
申请人： Makoto Aimura , Hideki Hashimoto , Masakazu Saka
发明人： Makoto Aimura , Hideki Hashimoto , Masakazu Saka
IPC分类号： B60Q1/00
CPC分类号： G06K9/00805 , G06T7/593 , G06T2207/10021 , G06T2207/10048 , G06T2207/30261 , G08G1/166
摘要： A vehicle environment monitoring apparatus is equipped with a monitored object detecting unit 26 which detects an object having possibility of contact by applying an object detecting algorithm for short range when the distance calculated from data on one disparity by the first distance calculating unit 24 is equal to or less than a predetermined distance, and detects the object having possibility of contact by applying an object detecting algorithm for long range when the distance is longer than the predetermined distance, using the distance between the object and the vehicle calculated from a disparity gradient by the second distance calculating unit 25.
摘要翻译：车辆环境监测装置配备有被监视对象检测单元26，当从第一距离计算单元24的一个视差上的数据计算出的距离等于第一距离计算单元26时，通过应用近距离的对象检测算法来检测具有接触可能性的对象或者小于预定距离，并且通过使用距离长于预定距离的远距离的物体检测算法，使用由视差梯度计算的物体与车辆之间的距离，来检测具有接触可能性的物体第二距离计算单元25。

72. 发明授权

US08184862B2 Vehicle periphery monitoring apparatus 有权
标题翻译：车辆周边监控装置
公开(公告)号：US08184862B2
公开(公告)日：2012-05-22
申请号：US12936426
申请日：2009-01-08
申请人： Nobuharu Nagaoka , Hideki Hashimoto
发明人： Nobuharu Nagaoka , Hideki Hashimoto
IPC分类号： G06K9/00
CPC分类号： G06K9/00805 , G06K9/00369 , G06T7/248 , G06T7/55 , G06T2207/10016 , G06T2207/30196 , G06T2207/30261 , G08G1/166
摘要： Provided is an apparatus capable of, even when an object is moving, measuring the position of the object at a high accuracy. A vehicle periphery monitoring apparatus (10) calculates the change rate (Rate(t)) of the size of an object region between two times separated by a specified interval (ΔT). The specified interval (ΔT) is a time interval defined so that the shapes and postures of an object in images resemble or match each other to such an extent that it is possible to identify that the object is identical. Based on the change rage (Rate(t)) of the size of the object region during the specified interval (ΔT), it is possible to measure the distance from a vehicle (1) to the object or the position at a high accuracy even when the object is moving.
摘要翻译：提供一种能够即使当物体移动时能够高精度地测量物体的位置的装置。车辆周边监视装置（10）计算在指定间隔（＆Dgr; T）之间分开的两次之间的对象区域的大小的变化率（Rate（t））。指定的间隔（＆Dgr; T）是定义的时间间隔，使得图像中的对象的形状和姿势类似于或相互匹配，使得可以识别对象是相同的。基于指定间隔（＆Dgr; T）期间对象区域的大小的变化幅度（Rate（t）），可以测量从车辆（1）到物体或高位置的距离即使对象正在移动，也能确定精度。

73. 发明申请

US20120044352A1 VEHICLE PERIPHERY MONITORING DEVICE 有权
标题翻译：车辆周边监控装置
公开(公告)号：US20120044352A1
公开(公告)日：2012-02-23
申请号：US13265167
申请日：2010-01-28
申请人： Makoto Aimura , Hideki Hashimoto
发明人： Makoto Aimura , Hideki Hashimoto
IPC分类号： H04N7/18
CPC分类号： B60R1/00 , B60R2300/106 , B60R2300/307 , B60R2300/8093 , G08G1/166
摘要： Provided is a vehicle periphery monitoring device capable of making a driver reliably recognize the shape of an object to which attention should be paid. According to an image processing unit (1) (vehicle periphery monitoring device), for example, when it is highly probable that the shape of the object is difficult to be visually recognized through the output image because of the reason that the object is present far from the vehicle or other reason, an enlarged image (Q′) of the object (Q) is displayed on an HUD (7) so as not to overlap with the object (Q).
摘要翻译：提供一种能够使驾驶员可靠地识别应该注意的物体的形状的车辆周边监视装置。根据图像处理单元（1）（车辆周边监视装置），例如，由于出现物体远的原因，通过输出图像很难使视觉识别对象的形状很可能从车辆或其他原因，将物体（Q）的放大图像（Q'）显示在HUD（7）上，以便不与物体（Q）重叠。

74. 发明申请

US20120034670A1 ORGANIC-INORGANIC COMPOSITE MATERIAL AND PROCESS FOR PRODUCING SAME 有权
标题翻译：有机无机复合材料及其生产方法
公开(公告)号：US20120034670A1
公开(公告)日：2012-02-09
申请号：US13260613
申请日：2010-03-26
申请人： Takashi Sakai , Tadashi Ema , Jun Takada , Tatsuo Fujii , Makoto Nakanishi , Hideki Hashimoto
发明人： Takashi Sakai , Tadashi Ema , Jun Takada , Tatsuo Fujii , Makoto Nakanishi , Hideki Hashimoto
IPC分类号： C12N11/02 , C07F15/02
CPC分类号： C09C1/24 , B01J31/003 , B01J31/1625 , B01J31/1633 , B01J31/1815 , B01J2231/49 , B01J2531/025 , B01J2531/16 , B01J2531/26 , B01J2531/31 , B01J2531/62 , B01J2531/845 , C01G49/02 , C01G49/06 , C01G49/08 , C01P2002/52 , C01P2002/60 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C07B2200/11 , C07F7/1804
摘要： Disclosed is an organic-inorganic composite material obtained by chemically modifying a microorganism-derived ceramic material with an organic group, and a process for producing the organic-inorganic composite material. The process is characterized by reacting a microorganism-derived ceramic material with at least one compound selected from the group consisting of silane coupling agents represented by formula (1), silane coupling agents represented by formula (2), and titanate coupling agents represented by formula (3). The organic-inorganic complex can be used in applications for immobilized catalysts and immobilized enzyme catalysts.
摘要翻译：公开了通过用有机基团对微生物衍生的陶瓷材料进行化学改性而获得的有机 - 无机复合材料，以及有机 - 无机复合材料的制造方法。该方法的特征在于使来自微生物的陶瓷材料与选自由式（1）表示的硅烷偶联剂，由式（2）表示的硅烷偶联剂）和由式（2）表示的钛酸酯偶联剂组成的组中的至少一种化合物反应，（3）。有机 - 无机复合物可用于固定化催化剂和固定化酶催化剂的应用。

75. 发明授权

US08105927B2 Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device 有权
标题翻译：用于制造离子注入掩模的方法，以及制造碳化硅半导体器件的方法
公开(公告)号：US08105927B2
公开(公告)日：2012-01-31
申请号：US12716916
申请日：2010-03-03
申请人： Ken-ichi Nonaka , Hideki Hashimoto , Seiichi Yokoyama , Hiroaki Iwakuro , Koichi Nishikawa , Masaaki Shimizu , Yusuke Fukuda
发明人： Ken-ichi Nonaka , Hideki Hashimoto , Seiichi Yokoyama , Hiroaki Iwakuro , Koichi Nishikawa , Masaaki Shimizu , Yusuke Fukuda
IPC分类号： H01L21/425
CPC分类号： H01L29/8083 , H01L21/0465 , H01L21/266 , H01L29/1066 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
摘要翻译：公开了一种用于制造离子注入掩模的方法，其包括以下步骤：在半导体衬底的整个表面上形成氧化膜作为保护膜; 在氧化膜上形成薄金属膜; 以及在所述薄金属膜上形成由离子抑制金属构成的离子抑制层。所获得的离子注入掩模用于形成更深的选择性导电区域。

76. 发明申请

US20110198617A1 ELECTRODE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：电极，半导体器件及制造半导体器件的方法
公开(公告)号：US20110198617A1
公开(公告)日：2011-08-18
申请号：US13125187
申请日：2009-10-06
申请人： Kensuke Iwanaga , Seiichi Yokoyama , Hideki Hashimoto , Kenichi Nonaka , Masashi Sato , Norio Tsuyuguchi
发明人： Kensuke Iwanaga , Seiichi Yokoyama , Hideki Hashimoto , Kenichi Nonaka , Masashi Sato , Norio Tsuyuguchi
IPC分类号： H01L29/20 , H01L21/283 , B82Y99/00 , B82Y40/00
CPC分类号： H01L21/0485 , H01L21/28512 , H01L23/485 , H01L29/1608 , H01L29/6606 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC semiconductor. The semiconductor device simultaneously has improved contact resistance and surface roughness in the ohmic electrode. The semiconductor device comprises an ohmic electrode (18) comprising a nickel (Ni) layer (21), a titanium (Ti) layer (22), and an aluminum (Al) layer (23) stacked in that order on a p-type silicon carbide semiconductor region (13). The ohmic electrode (18) comprises 14 to 47 atomic % of a nickel element, 5 to 12 atomic % of titanium element, and 35 to 74 atomic % of an aluminum element, provided that the atomic ratio of the nickel element to the titanium element is 1 to 11.
摘要翻译：公开了一种包括p型SiC半导体和在p型SiC半导体上设置有Ni / Al层叠结构的欧姆电极的半导体器件。半导体器件同时具有改善的欧姆电极中的接触电阻和表面粗糙度。该半导体器件包括欧姆电极（18），其包括镍（Ni）层（21），钛（Ti）层（22）和铝（Al）层（23），其依次堆叠在p型碳化硅半导体区域（13）。欧姆电极（18）包含14至47原子％的镍元素，5至12原子％的钛元素和35至74原子％的铝元素，条件是镍元素与钛元素的原子比是1到11。

77. 发明申请

US20100130289A1 DAMPER MECHANISM 审中-公开
标题翻译：阻尼机制
公开(公告)号：US20100130289A1
公开(公告)日：2010-05-27
申请号：US12598173
申请日：2008-05-28
申请人： Hiroshi Uehara , Yasuyuki Hashimoto , Hideki Hashimoto , Yoshinari Yoshimura
发明人： Hiroshi Uehara , Yasuyuki Hashimoto , Hideki Hashimoto , Yoshinari Yoshimura
IPC分类号： F16F15/129
CPC分类号： F16D13/644 , F16D13/646 , F16F15/129
摘要： A damper mechanism 4 has an input rotary body 2, a hub flange 6, a splined hub 3, a third friction washer 60, a bushing 70, and an output plate 90. The third friction washer 60 is non-rotatably mounted on the hub flange 6 with respect to the hub flange 6, and has a friction member that contacts the input rotary body 2 in the axial direction. The bushing 70 is axially disposed between the hub flange 6 and the third friction washer 60, and is mounted on the hub flange 6 and the third friction washer 60 to be incapable of rotation with respect to the third friction washer 60. The output plate 90 is disposed between the third friction washer 60 and the bushing 70 in the axial direction, and is supported by the splined hub 3 to be capable of rotating integrally with the splined hub 3.
摘要翻译：阻尼机构4具有输入旋转体2，轮毂凸缘6，花键轮毂3，第三摩擦垫圈60，衬套70和输出板90.第三摩擦垫圈60不可旋转地安装在轮毂凸缘6相对于轮毂凸缘6，并且具有在轴向方向上与输入旋转体2接触的摩擦构件。衬套70轴向地设置在轮毂凸缘6和第三摩擦垫圈60之间，并且安装在轮毂凸缘6和第三摩擦垫圈60上，使其不能相对于第三摩擦垫圈60旋转。输出板90 在轴向上设置在第三摩擦垫圈60和衬套70之间，并且由花键轮毂3支撑以能够与花键轮毂3一体地旋转。

78. 发明申请

US20090004790A1 METHOD FOR MANUFACTURING JUNCTION SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090004790A1
公开(公告)日：2009-01-01
申请号：US12203660
申请日：2008-09-03
申请人： Ken-ichi NONAKA , Hideki Hashimoto , Seiichi Yokoyama , Kensuke Iwanaga , Yoshimitsu Saito
发明人： Ken-ichi NONAKA , Hideki Hashimoto , Seiichi Yokoyama , Kensuke Iwanaga , Yoshimitsu Saito
IPC分类号： H01L21/337
CPC分类号： H01L29/7722 , Y10S438/931
摘要： A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.
摘要翻译：一种用于制造具有形成在半导体晶体的一个表面上的具有第一导电类型的低电阻层的漏极区域的结半导体器件的方法，包括形成在另一个上的第一导电类型的低电阻层的源极区域半导体晶体的表面，形成在源极区域周围的第二导电类型的栅极区域，在源极区域和漏极区域之间的第一导电类型的高电阻层，以及复合抑制半导体层设置在栅极区域和源极区域之间的半导体晶体的表面附近的第二导电类型。

79. 发明申请

US20080260207A1 Vehicle environment monitoring apparatus 有权
标题翻译：车辆环境监测仪器
公开(公告)号：US20080260207A1
公开(公告)日：2008-10-23
申请号：US11974819
申请日：2007-10-16
申请人： Nobuharu Nagaoka , Hideki Hashimoto
发明人： Nobuharu Nagaoka , Hideki Hashimoto
IPC分类号： G06K9/00
CPC分类号： G06T7/0002 , G06K9/00805 , G06T7/32
摘要： A vehicle environment monitoring apparatus capable of extracting an image of a monitored object in an environment around a vehicle by separating the same from the background image with a simple configuration having a single camera mounted on the vehicle is provided. The apparatus includes a first image portion extracting processing unit to extract first image portions (A1, A2) considered to be the head of a pedestrian from a currently picked up image and a previously picked up image by an infrared camera, a mask area setting processing unit to set mask areas (M1(0,0), M1(1,0), . . . , M1(5,8)) around the first image portion (A1) in the currently picked up image, and an object extracting processing unit to carry out pattern matching for the previously picked up image by a comparison pattern obtained through affine transformation of each mask area at a change rate (Rate) between the first image portions (A1, A2), and to set an area (Ar1) including the first image portion (A2) and a second image portion (M2(1,3), M2(2,3), . . . , M2(3,6)) where a displacement amount between the position (black point) corresponding to the centroid of the mask area and the matching position is smaller than a predetermined threshold value to be an image area of the monitored object.
摘要翻译：提供了一种车辆环境监测装置，其能够通过以安装在车辆上的单个照相机的简单配置将其与背景图像分离来在车辆周围的环境中提取被监视物体的图像。该装置包括第一图像部分提取处理单元，用于从当前拾取的图像中提取被认为是行人头部的第一图像部分（A 1，A 2），以及通过红外相机提取先前拍摄的图像的掩模区域设置处理单元，以在当前拾取的第一图像部分（A 1）周围设置掩模区域（M 1（0,0），M 1（1,0），...，M 1（5,8））图像和对象提取处理单元，以通过以每个掩模区域的仿射变换获得的比较图案，以第一图像部分（A 1，A 2）之间的变化率（Rate），对先前拍摄的图像进行模式匹配，并且设置包括第一图像部分（A 2）和第二图像部分（M 2（1,3），M 2（2,3），...，M 2（3， 6）），其中与掩模区域的质心相对应的位置（黑点）与匹配位置之间的位移量小于预定阈值值作为被监视对象的图像区域。

80. 发明申请

US20070256626A1 Growth of Nitride Semiconductor Crystals 失效
标题翻译：氮化物半导体晶体的生长
公开(公告)号：US20070256626A1
公开(公告)日：2007-11-08
申请号：US11659339
申请日：2005-08-31
申请人： Hideo Kawanishi , Hideki Hashimoto , Akihiko Horiuchi
发明人： Hideo Kawanishi , Hideki Hashimoto , Akihiko Horiuchi
IPC分类号： C30B23/00 , H01L21/205 , G05D16/00
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10T117/1008
摘要： A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.
摘要翻译：一种用于生长氮化物半导体的晶体的方法，其中在将反应管（11）中安装基板（12）的步骤之后，将包含第3族元素的第一原料气体进料到反应管中的基板上并且在反应管中将含有元素氮的第二原料气体进料到基板上的步骤交替地进行，以将氮化物半导体晶体直接沉积在基板上。第二原料气体中所含的元素氮的摩尔数与第一原料气体中的第三族元素的摩尔数相比为200以上。

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