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71. 发明申请

US20070178679A1 Methods of implanting ions and ion sources used for same 审中-公开
标题翻译：植入离子和离子源的方法
公开(公告)号：US20070178679A1
公开(公告)日：2007-08-02
申请号：US11504355
申请日：2006-08-15
申请人： Christopher Hatem , Anthony Renau , James E. White
发明人： Christopher Hatem , Anthony Renau , James E. White
IPC分类号： H01L21/425 , H01J37/08
CPC分类号： H01J37/08 , C23C14/48 , H01J37/3171 , H01L21/265
摘要： A method of implanting ions comprising generating C2B10Hx, ions from C2B10H12 and implanting the C2B10Hx, ions in a material. In some embodiments, the molecular weight of the C2B10Hx, ions is greater than 100 amu. In other embodiments, the molecular weight of the C2B10Hx, ions is approximately 132 to 144 amu or approximately 136 to 138 amu. An ion source is also disclosed comprising a chamber housing defining a chamber and a source feed gas supply configured to introduce C2B10H12 into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C2B10Hxions.
摘要翻译：一种植入离子的方法，包括产生C 2 H 2 H x H 2，从C 2 H 2 N 将12 H 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 2离子注入到材料中。在一些实施方案中，C 12 H 12 H 12 H 12的离子的分子量大于100amu。在其它实施方案中，C 12 H 12 H 12离子的分子量为约132至144amu或约136至138amu 。还公开了一种离子源，其包括限定腔室的腔室和构造成将C 2 H 2 H 12 H 12引入到所述室，其中所述离子源被配置为将所述室内的所述源进料气体离子化为C 2 H 12 H 12 H 12。

72. 发明申请

US20070108390A1 Technique for Shaping a Ribbon-Shaped Ion Beam 有权
标题翻译：形成带状离子束的技术
公开(公告)号：US20070108390A1
公开(公告)日：2007-05-17
申请号：US11536992
申请日：2006-09-29
申请人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
发明人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
IPC分类号： H01J37/12
CPC分类号： H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要： A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要翻译：公开了一种用于成形带状离子束的技术。在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形带状离子束。

73. 发明申请

US20070087581A1 TECHNIQUE FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070087581A1
公开(公告)日：2007-04-19
申请号：US11608522
申请日：2006-12-08
申请人： Vikram SINGH , Harold Persing , Edmund Winder , Anthony Renau , George Papasouliotis
发明人： Vikram SINGH , Harold Persing , Edmund Winder , Anthony Renau , George Papasouliotis
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/22 , C23C16/345 , C23C16/452 , C23C16/4554 , H01L21/0217 , H01L21/02274 , H01L21/3141 , H01L21/3185 , H01L21/32155
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and atoms of at least one second species, thereby forming a layer of the precursor substance on the substrate surface. The method may also comprise exposing the substrate surface to plasma-generated metastable atoms of a third species, wherein the metastable atoms desorb the atoms of the at least one second species from the substrate surface to form an atomic layer of the at least one first species. A desired amount of stress in the atomic layer of the at least one first species may be achieved by controlling one or more parameters in the atomic layer deposition process.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于形成应变薄膜的方法来实现。该方法可以包括向衬底表面提供一种或多种具有至少一种第一种类的原子和至少一种第二种类的原子的前体物质，由此在衬底表面上形成前体物质层。该方法还可以包括将基底表面暴露于等离子体产生的第三种类的亚稳原子，其中亚稳原子从底物表面解吸至少一种第二种类的原子以形成至少一种第一种类的原子层。可以通过控制原子层沉积工艺中的一个或多个参数来实现至少一种第一种类的原子层中所需的应力量。

74. 发明授权

US07161161B2 Uniformity control using multiple fixed wafer orientations and variable scan velocity 有权
标题翻译：使用多个固定晶片取向和可变扫描速度的均匀性控制
公开(公告)号：US07161161B2
公开(公告)日：2007-01-09
申请号：US11008764
申请日：2004-12-08
申请人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
发明人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
IPC分类号： G21K5/10
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未调谐的离子束通过以可变或不均匀的扫描速度以目标的多个旋转固定取向（扫描方向）扫描光束来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。该技术可以独立地使用或与其他均匀性方法结合使用以实现所需的均匀性水平。

75. 发明申请

US20060240651A1 Methods and apparatus for adjusting ion implant parameters for improved process control 审中-公开
标题翻译：用于调整离子注入参数以改进过程控制的方法和设备
公开(公告)号：US20060240651A1
公开(公告)日：2006-10-26
申请号：US11114593
申请日：2005-04-26
申请人： Anthony Renau , Dennis Rodier , Joseph Olson , Bret Adams
发明人： Anthony Renau , Dennis Rodier , Joseph Olson , Bret Adams
IPC分类号： H01L21/425
CPC分类号： H01L22/20
摘要： A method for processing a substrate, such as a semiconductor wafer, includes performing a measurement to determine a substrate parameter distribution to be compensated, determining an adjusted implant parameter distribution to compensate for the substrate parameter distribution, and implanting the substrate in accordance with the adjusted implant parameter distribution. The substrate parameter distribution to be compensated may result from another process step and may be uniform or non-uniform. In another embodiment, an implant parameter may be varied as a function of implant position on the substrate to achieve different substrate parameter values in different areas of the substrate.
摘要翻译：用于处理诸如半导体晶片的衬底的方法包括执行测量以确定要补偿的衬底参数分布，确定调整的植入参数分布以补偿衬底参数分布，以及根据所调整的衬底参数分布来植入衬底植入参数分布。要补偿的衬底参数分布可以由另一个工艺步骤产生，并且可以是均匀的或不均匀的。在另一个实施例中，植入参数可以作为衬底上的植入位置的函数而变化，以在衬底的不同区域中实现不同的衬底参数值。

76. 发明申请

US20060169915A1 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US20060169915A1
公开(公告)日：2006-08-03
申请号：US11269033
申请日：2005-11-08
申请人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
发明人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
IPC分类号： H01L21/336 , H01J27/00
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

77. 发明申请

US20060145095A1 Methods and apparatus for ion implantation with control of incidence angle by beam deflection 审中-公开
标题翻译：离子注入的方法和装置，通过光束偏转控制入射角
公开(公告)号：US20060145095A1
公开(公告)日：2006-07-06
申请号：US11027371
申请日：2004-12-30
申请人： Joseph Olson , Anthony Renau
发明人： Joseph Olson , Anthony Renau
IPC分类号： H01J37/08
CPC分类号： H01J37/3171
摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes generating an ion beam, providing a workpiece support surface to support a workpiece during ion implantation, deflecting the ion beam to provide a desired incidence angle of the deflected ion beam relative to the workpiece support surface, and performing an implant with the ion beam deflected at the desired incidence angle relative to the workpiece support surface. The incidence angle may be measured, and the beam deflection may be adjusted based on a comparison of the measured incidence angle and the desired incidence angle.
摘要翻译：用于将离子注入到诸如半导体晶片的工件中的方法包括产生离子束，在离子注入期间提供工件支撑表面以支撑工件，偏转离子束以提供偏转的离子束相对的期望入射角并且以相对于工件支撑表面以期望的入射角偏转的离子束来执行植入。可以测量入射角，并且可以基于测量的入射角和期望的入射角的比较来调整光束偏转。

78. 发明授权

US06791097B2 Adjustable conductance limiting aperture for ion implanters 有权
标题翻译：离子注入机可调电导限制孔径
公开(公告)号：US06791097B2
公开(公告)日：2004-09-14
申请号：US10050743
申请日：2002-01-16
申请人： Jay T. Scheuer , Anthony Renau , Eric D. Hermanson
发明人： Jay T. Scheuer , Anthony Renau , Eric D. Hermanson
IPC分类号： H01J3708
CPC分类号： H01J37/16 , H01J37/3171 , H01J2237/045 , H01J2237/188
摘要： A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.
摘要翻译：带电粒子束装置包括用于将带电粒子束沿着沿着下游方向的光束路径引导到目标的带电粒子束源，以及限定目标腔室的处理站。处理站包括一个室分隔器，其在靶的带电粒子束处理期间将目标室分成上游和下游区域，目标位于下游区域。分隔器具有穿过其中的孔，其尺寸允许离子束通过靶，而不会实质阻塞，并限制气体回流到腔室的上游区域。分隔器最小化暴露于在目标处产生的外来物种的光束体积，从而降低光束变化碰撞的可能性。

79. 发明授权

US06777686B2 Control system for indirectly heated cathode ion source 有权
标题翻译：间接加热阴极离子源控制系统
公开(公告)号：US06777686B2
公开(公告)日：2004-08-17
申请号：US09825901
申请日：2001-04-04
申请人： Joseph C. Olson , Daniel Distaso , Anthony Renau
发明人： Joseph C. Olson , Daniel Distaso , Anthony Renau
IPC分类号： H01J3708
CPC分类号： H01J27/022 , H01J27/08
摘要： An indirectly heated cathode ion source includes an extraction current sensor for sensing ion current extracted from the arc chamber and an ion source controller for controlling the filament power supply, the bias power supply and/or the arc power supply. The ion source controller may compare the sensed extraction current with a reference extraction current and determine an error value based on the difference between the sensed extraction current and the reference extraction current. The power supplies of the indirectly heated cathode ion source are controlled to minimize the error value, thus maintaining a substantially constant extraction current. The ion source controller utilizes a control algorithm, for example a closed feedback loop, to control the power supplies in response to the error value. In a first control algorithm, the bias current IB supplied by the bias power supply is varied so as to control the extraction current IE. Further according to the first control algorithm, the filament current IF and the arc voltage VA are maintained constant. According to a second control algorithm, the filament current IF is varied so as to control the extraction current IE. Further according to the second control algorithm, the bias current IB and the arc voltage VA are maintained constant.
摘要翻译：间接加热的阴极离子源包括用于感测从电弧室提取的离子电流的提取电流传感器和用于控制灯丝电源，偏置电源和/或电弧电源的离子源控制器。离子源控制器可以将感测的提取电流与参考提取电流进行比较，并且基于感测的提取电流与参考提取电流之间的差来确定误差值。控制间接加热的阴极离子源的电源以使误差值最小化，从而保持基本上恒定的提取电流。离子源控制器利用控制算法，例如闭合反馈环路，以响应误差值来控制电源。在第一控制算法中，改变由偏置电源提供的偏置电流IB，以便控制提取电流IE。此外，根据第一控制算法，灯丝电流IF和电弧电压VA保持恒定。根据第二控制算法，改变灯丝电流IF，以控制提取电流IE。此外，根据第二控制算法，偏置电流IB和电弧电压VA保持恒定。

80. 发明授权

US06437350B1 Methods and apparatus for adjusting beam parallelism in ion implanters 有权
标题翻译：用于调整离子注入机中光束平行度的方法和装置
公开(公告)号：US06437350B1
公开(公告)日：2002-08-20
申请号：US09649183
申请日：2000-08-28
申请人： Joseph C. Olson , Anthony Renau
发明人： Joseph C. Olson , Anthony Renau
IPC分类号： H01J3708
CPC分类号： H01J37/3171 , H01J37/1471
摘要： Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.
摘要翻译：用于在诸如半导体晶片的工件中注入离子的方法和装置包括产生离子束，测量离子束的平行度，基于所测量的平行度调节离子束以达到期望的平行度，测量经调节的离子束，以参考所测量的束方向的注入角度定向工件，并且以与以测量的光束方向为准的注入角度对准的工件进行植入。可以以高度的束平行度执行植入物。

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