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    • 71. 发明授权
    • Control circuit for data transfer between a main memory and a register
file
    • 用于主存储器和寄存器文件之间的数据传输的控制电路
    • US5483643A
    • 1996-01-09
    • US39788
    • 1993-03-30
    • Yuichi Sato
    • Yuichi Sato
    • G06F9/34G06F9/312G06F12/02G06F13/00
    • G06F9/30043
    • A control circuit for data transfer between a main memory and a register file. Firstly, the control circuit acquires, via a selector, a save area mask (SAM) data from external circuitry. A register file address generator produces a register file address using the SAM data which has been chosen by the selector. The register file address determines a location of a register in the register file. A SAM data renewal circuit is provided to renew the SAM data selected by the selector. The SAM data which has been renewed will be used for addressing another register in the register file. The renewal circuit supplies the selector with the SAM data which has been renewed. A controller is arranged to receive the SAM data chosen by the selector and generates a control signal according thereto. The control signal is applied to the selector and controls same such as to select the SAM data from the external circuit or the SAM data applied from the SAM data renewal circuit.
    • 用于在主存储器和寄存器文件之间进行数据传输的控制电路。 首先,控制电路经由选择器获取来自外部电路的保存区掩码(SAM)数据。 寄存器文件地址生成器使用由选择器选择的SAM数据产生寄存器文件地址。 寄存器文件地址确定寄存器文件中寄存器的位置。 提供SAM数据更新电路以更新由选择器选择的SAM数据。 已更新的SAM数据将用于寻址寄存器文件中的另一个寄存器。 更新电路为选择器提供已更新的SAM数据。 控制器被布置为接收由选择器选择的SAM数据,并根据其产生控制信号。 控制信号被施加到选择器并进行控制,以从外部电路选择SAM数据或从SAM数据更新电路应用的SAM数据。
    • 79. 发明授权
    • Method for evaluating electroless plating
    • 化学镀的评估方法
    • US4331699A
    • 1982-05-25
    • US125567
    • 1980-02-28
    • Masayuki SuzukiYuichi SatoKen-ichi Kanno
    • Masayuki SuzukiYuichi SatoKen-ichi Kanno
    • G01N27/26C23C18/31G01N17/02C23C3/02
    • G01N17/02
    • A test piece is immersed in an electroless plating bath. It is then electrically charged instantaneously via a counter electrode to have a polarization potential .eta.(t) of a few millivolts. The charge consumed by the electroless plating reaction of the test piece is measured by a potential recorder in the form of a variation of the polarization potential .eta.(t) with respect to time t. The .eta.(t)-t relation is analyzed to obtain a resistance R of the test piece. After the potential of the test piece has returns to electroless deposition potential E.sub.ELP, the test piece is charged again until its polarization potential .eta.(t) rises to 50 millivolts or more. A .eta.(t)-t relation is obtained. Based on the .eta.(t)-t relation, a Tafel slope .beta..sub.a of anodic reaction is obtained. After the potential of the test piece has returned to electroless deposition potential E.sub.ELP, the test piece is so charged for the third time as to have its polarization potential .eta.(t) lowered to -50 millivolts or less, and a .eta.(t)-t relation is obtained. This relation is analyzed to obtain a Tafel slope .beta..sub.c of anodic reaction of the test piece. Based on the reaction resistance R, Tafel slopes .beta..sub.a and .beta..sub.c, an electroless plating current density I.sub.ELP is obtained. Based on the electroless plating current density I.sub.ELP, a rate of electroless plating V.sub.ELP is calculated.
    • 将试验片浸在无电镀浴中。 然后通过对电极瞬时充电以具有几毫伏的极化电位eta(t)。 测试片的无电解电镀反应所消耗的电荷由潜在的记录器以相对于时间t的极化电位eta(t)变化的形式测量。 分析eta(t)-t关系,得到试片的电阻R。 在试片的电位返回到无电沉积电位EELP之后,再次对试片进行充电,直到其极化电位eta(t)上升到50毫伏以上。 得到eta(t)-t关系。 基于eta(t)-t关系,获得了阳极反应的Tafel斜率βa。 在试片的电位恢复到无电沉积电位EELP之后,试样第三次如此充电使其极化电位eta(t)降至-50毫伏或更小,eta(t) - t关系。 分析该关系以获得试件的阳极反应的Tafel斜率βc。 基于反应电阻R,Tafel斜率βa和βc,得到化学镀电流密度IELP。 基于化学镀电流密度IELP,计算化学镀VELP的速率。