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1. 发明授权

US4331699A Method for evaluating electroless plating 失效
标题翻译：化学镀的评估方法
公开(公告)号：US4331699A
公开(公告)日：1982-05-25
申请号：US125567
申请日：1980-02-28
申请人： Masayuki Suzuki , Yuichi Sato , Ken-ichi Kanno
发明人： Masayuki Suzuki , Yuichi Sato , Ken-ichi Kanno
IPC分类号： G01N27/26 , C23C18/31 , G01N17/02 , C23C3/02
CPC分类号： G01N17/02
摘要： A test piece is immersed in an electroless plating bath. It is then electrically charged instantaneously via a counter electrode to have a polarization potential .eta.(t) of a few millivolts. The charge consumed by the electroless plating reaction of the test piece is measured by a potential recorder in the form of a variation of the polarization potential .eta.(t) with respect to time t. The .eta.(t)-t relation is analyzed to obtain a resistance R of the test piece. After the potential of the test piece has returns to electroless deposition potential E.sub.ELP, the test piece is charged again until its polarization potential .eta.(t) rises to 50 millivolts or more. A .eta.(t)-t relation is obtained. Based on the .eta.(t)-t relation, a Tafel slope .beta..sub.a of anodic reaction is obtained. After the potential of the test piece has returned to electroless deposition potential E.sub.ELP, the test piece is so charged for the third time as to have its polarization potential .eta.(t) lowered to -50 millivolts or less, and a .eta.(t)-t relation is obtained. This relation is analyzed to obtain a Tafel slope .beta..sub.c of anodic reaction of the test piece. Based on the reaction resistance R, Tafel slopes .beta..sub.a and .beta..sub.c, an electroless plating current density I.sub.ELP is obtained. Based on the electroless plating current density I.sub.ELP, a rate of electroless plating V.sub.ELP is calculated.
摘要翻译：将试验片浸在无电镀浴中。然后通过对电极瞬时充电以具有几毫伏的极化电位eta（t）。测试片的无电解电镀反应所消耗的电荷由潜在的记录器以相对于时间t的极化电位eta（t）变化的形式测量。分析eta（t）-t关系，得到试片的电阻R。在试片的电位返回到无电沉积电位EELP之后，再次对试片进行充电，直到其极化电位eta（t）上升到50毫伏以上。得到eta（t）-t关系。基于eta（t）-t关系，获得了阳极反应的Tafel斜率βa。在试片的电位恢复到无电沉积电位EELP之后，试样第三次如此充电使其极化电位eta（t）降至-50毫伏或更小，eta（t） - t关系。分析该关系以获得试件的阳极反应的Tafel斜率βc。基于反应电阻R，Tafel斜率βa和βc，得到化学镀电流密度IELP。基于化学镀电流密度IELP，计算化学镀VELP的速率。

2. 发明授权

US4190502A Method of evaluating the corrosion rate of metal 失效
标题翻译：评估金属腐蚀速率的方法
公开(公告)号：US4190502A
公开(公告)日：1980-02-26
申请号：US950051
申请日：1978-10-10
申请人： Ken-ichi Kanno , Masayuki Suzuki , Yuichi Sato , Masamichi Machida
发明人： Ken-ichi Kanno , Masayuki Suzuki , Yuichi Sato , Masamichi Machida
IPC分类号： G01N27/26 , G01N17/00 , G01N17/02 , G01N27/46 , G01N27/30
CPC分类号： G01N17/02
摘要： A metal test piece is disposed in a cell filled with a test solution. The metal test piece is electrically charged instantaneously through a counter electrode so as to have a few millivolts polarization potential .eta..sub.t. The charge consumed by the corrosion reaction of the test piece is measured by a potential recorder in the form of a variation of the polarization potential .eta..sub.t with respect to time t. The measured (.eta..sub.t -t) relation is analyzed to obtain a polarization resistance R.sub.P of the metal test piece. After the potential of the metal test piece returns to its natural potential Ecorr, the test piece is charged again until its polarization potential .eta..sub.t rises to 50 millivolts or more, and the (.eta..sub.t -t) relation is measured in the same way as mentioned above. Based on this relation, the Tafel slope .beta..sub.a of the anodic reaction is obtained. After the potential of the metal test piece has returned to its natural potential Ecorr, the test piece is so charged for the third time as to have its polarization potential .eta..sub.t lowered to -50 millivolts or less, and the (.eta..sub.t -t) relation is measured. This relation is analyzed to obtain the Tafel slope .beta..sub.c of the cathodic reaction. Based on the polarization resistance R.sub.P, Tafel slopes .beta..sub.a and .beta..sub.c, the corrosion current density I.sub.corr is obtained, from which the corrosion rate V is calculated.
摘要翻译：将金属试片放置在填充有测试溶液的电池中。金属试片瞬间通过对电极进行充电，从而具有几毫伏的极化电位等。试验片的腐蚀反应所消耗的电荷用潜在的记录仪以相对于时间t的偏振电位等的变化的形式来测量。分析测得的（eta t-t）关系，得到金属试片的极化电阻RP。在金属试片的电位恢复到其自然电位Ecorr之后，再次对试片进行充电，直到其极化电位升至50毫伏以上，并且以与上述相同的方式测量（等）关系）。基于这种关系，获得了阳极反应的Tafel斜率βa。在金属试片的电位恢复到其自然电位Ecorr之后，试样第三次如此充电以使其极化电位等于或低于-50毫伏，（eta tt）关系为测量。分析该关系以获得阴极反应的Tafel斜率βc。基于极化电阻RP，Tafel斜率βa和βc，得到腐蚀电流密度Icorr，从中计算腐蚀速率V.

3. 发明授权

US4130464A Method of evaluating the corrosion rates of metals 失效
标题翻译：评估金属腐蚀速率的方法
公开(公告)号：US4130464A
公开(公告)日：1978-12-19
申请号：US798168
申请日：1977-05-18
申请人： Kenichi Kanno , Masayuki Suzuki , Yuichi Sato
发明人： Kenichi Kanno , Masayuki Suzuki , Yuichi Sato
IPC分类号： G01N17/02 , G01N27/416 , G01N27/46 , G01N27/30
CPC分类号： G01N17/02
摘要： A test piece of metal with a given area S is disposed with a reference electrode in test solution. The open circuit potential E.sub.cor, i.e. the corrosion potential, of the test piece is measured as the reference electrode potential. A given amount of charges q from a capacitor is instantaneously fed through the reference electrode to the electrical double layer of the test piece. When that a given amount of charge q is stored in the electrical double layer, the absolute value of polarization potential of the test piece sharply increases. Then, the absolute value of the polarization potential gradually decreases due to the corrosion reaction. The polarization potential variation is recorded referred to the reference electrode as a polarization potential (.eta..sub.t) - time (t) curve by a potential recorder with an extremely high input impedance. The measurement result of the polarization potential (.eta..sub.t) - time (t) curve may be theoretically expressed by the equation log .eta..sub.t = -t/(C.sub.D R.sub.p) + log .eta..sub.0. Therefore, the initial polarization potential .eta..sub.0 may be obtained by extrapolating the measurement result to the initial time t=0. The differential capacitance of the double layer C.sub.D can readily be calculated by the equation q/S = .DELTA.q = C.sub.D .eta..sub.0, and thus the polarization resistance R.sub.p is obtained from the measurement result. Since the polarization resistance R.sub.p is inversely proportional to the corrosion rate, the corrosion rate may be evaluated. The corrosion rate also is obtained from the polarization resistance R.sub.p by using a theoretical equation.
摘要翻译：具有给定面积S的金属测试片与测试溶液中的参考电极一起布置。测量试片的开路电位Ecor即腐蚀电位作为参考电极电位。将来自电容器的给定量的电荷q通过参考电极瞬时馈送到测试片的双电层。当电双重层中存储给定量的电荷q时，试片的极化电位的绝对值急剧增加。然后，由于腐蚀反应，极化电位的绝对值逐渐降低。通过具有极高输入阻抗的电位记录器将参考电极参考的极化电位变化记录为极化电位（eta t） - 时间（t）曲线。极化电位（eta t） - 时间（t）曲线的测量结果可以理论上由等式log eta t = -t /（CDRp）+ log eta 0表示。因此，可以获得初始极化电位eta 0 通过将测量结果外推到初始时间t = 0。双层CD的差分电容可以容易地通过等式q / S = DELTA q = CD eta 0计算，因此从测量结果获得极化电阻Rp。由于极化电阻Rp与腐蚀速度成反比，所以可以评价腐蚀速率。也可以通过使用理论方程从极化电阻Rp获得腐蚀速率。

4. 发明申请

US20220110934A1 PHARMACEUTICAL COMPOSITION 有权
公开(公告)号：US20220110934A1
公开(公告)日：2022-04-14
申请号：US17645509
申请日：2021-12-22
申请人： Takashi SATO , Takeshi Shimosato , Tatsuru Moritani , Tadahiko Morinaga , Yuichi Sato , Akihiro Kotsugai
发明人： Takashi SATO , Takeshi Shimosato , Tatsuru Moritani , Tadahiko Morinaga , Yuichi Sato , Akihiro Kotsugai
IPC分类号： A61K31/496 , A61K9/16
摘要： A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.

5. 发明授权

US08927982B2 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device 有权
标题翻译：氧化物半导体膜，半导体器件以及半导体器件的制造方法
公开(公告)号：US08927982B2
公开(公告)日：2015-01-06
申请号：US13415080
申请日：2012-03-08
申请人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/78618 , G02F1/136204 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L21/02565 , H01L21/0259 , H01L21/265 , H01L27/1052 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
摘要翻译：通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

6. 发明授权

US08859330B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08859330B2
公开(公告)日：2014-10-14
申请号：US13419468
申请日：2012-03-14
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
IPC分类号： H01L21/00 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L21/425 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.
摘要翻译：提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

7. 发明授权

US08716073B2 Method for processing oxide semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：氧化物半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08716073B2
公开(公告)日：2014-05-06
申请号：US13547451
申请日：2012-07-12
申请人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
发明人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L27/1225
摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.
摘要翻译：提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。提供可以高速执行的包括氧化物半导体膜的晶体管。提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。在氧化物半导体膜上形成具有还原性的膜。接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

8. 发明授权

US08637163B2 Alloy with high glass forming ability and alloy-plated metal material using same 有权
标题翻译：具有高玻璃形成能力的合金和使用其的合金镀金属材料
公开(公告)号：US08637163B2
公开(公告)日：2014-01-28
申请号：US12309391
申请日：2007-07-19
申请人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
发明人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
IPC分类号： B32B15/00 , B32B15/18 , C22C18/00
CPC分类号： C23C30/00 , C22C1/002 , C22C18/00 , C22C21/06 , C22C21/12 , C22C45/00 , C22C45/001 , C22C45/005 , C22C45/08 , C23C2/04 , C23C2/06 , C23C2/12 , C23C4/123 , Y10T428/12493 , Y10T428/12799
摘要： An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.
摘要翻译：具有高玻璃形成能力的合金，其特征在于含有一组元素A，原子半径小于0.145nm，总数为20至85atm％的元素A，原子半径为0.145nm至小于0.17nm的元素B 总计为10〜79.7atm％，原子半径为0.17nm以上的元素C为0.3〜15atm％的组合; 当元素A，元素组B和元素C组中具有最大含量的元素分别被指定为“元素a”，“元素b”和“元素c”时，以元素A（例如Zn和/或Al）中的元素a的含量，元素B的元素B的含量（例如Mg）的含量与含量的比例元素C（例如Ca）中的元素c全部为70atm％以上; 并且通过在从元件a，元件b和元件c中选择的任何两个元件之间的液体形成焓是负的。

9. 发明授权

US08418277B2 Flush toilet 有权
标题翻译：抽水马桶
公开(公告)号：US08418277B2
公开(公告)日：2013-04-16
申请号：US12438965
申请日：2007-08-29
申请人： Mayu Okubo , Yoshikazu Ushijima , Yuichi Sato , Yoshinobu Kato , Ryosuke Hayashi , Ayako Harada
发明人： Mayu Okubo , Yoshikazu Ushijima , Yuichi Sato , Yoshinobu Kato , Ryosuke Hayashi , Ayako Harada
IPC分类号： E03D11/00
CPC分类号： E03D5/01 , E03D5/10 , E03D2201/30
摘要： A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low. The flush toilet is flushed with pressurized flush water and has a flush toilet body having a bowl and a drain trap pipe path; a pressurizing pump for pressurizing flush water to be jetted out; a water storage tank for storing flush water to be pressurized; flush control means for causing rim water discharge to be performed for a predetermined rim water discharge time by water supply pressure of running water and also causing jet water discharge to be made to flush the bowl; flush water replenishing means for replenishing, after the bowl is flushed, flush water to the water storage tank from the running water to thereby return the amount of flush water stored in the water storage tank to a specified level; timing means for measuring a water replenishing time after the flush water replenishing is started until the amount of flush water stored in the water storage tank return to the specified level; and water discharge time regulation means for regulating the rim water discharge time based on the water replenishing time.
摘要翻译：一种冲水马桶，其中供应适量的水，并且可以安装在水压较低的区域。冲水马桶用加压冲洗水冲洗，并具有带有碗和排水管道通道的抽水马桶主体; 用于对冲洗水进行加压以加压的加压泵; 用于储存冲洗水以加压的储水箱; 冲洗控制装置，用于通过自来水的供水压力使预定的轮辋排水时间进行轮辋排水，并且还引起喷射水排出以冲洗碗; 冲洗水补充装置，在碗被冲洗后，从自来水冲洗水到储水箱，从而将存储在储水箱中的冲洗水量返回到指定水平; 定时装置，用于在开始冲洗水补充之后测量补水时间，直到储存在储水箱中的冲洗水量达到指定水平; 和排水时间调节装置，用于根据补水时间调节轮辋排水时间。

10. 发明申请

US20120228544A1 POSITIVE ELECTRODE MATERIAL FOR ELECTRICAL DEVICE, AND ELECTRICAL DEVICE PRODUCED USING SAME 有权
标题翻译：用于电气设备的正极电极材料和使用其制造的电气设备
公开(公告)号：US20120228544A1
公开(公告)日：2012-09-13
申请号：US13513051
申请日：2010-12-02
申请人： Atsushi Ito , Yasuhiko Ohsawa , Yuichi Sato
发明人： Atsushi Ito , Yasuhiko Ohsawa , Yuichi Sato
IPC分类号： H01M4/525
CPC分类号： H01M4/525 , H01M4/505
摘要： [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency.[Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1−a)Li[NixCoyMn1-x-y]O2 (1) (wherein, 0
摘要翻译： [待解决的问题]提供一种具有高容量，提高初期充放电效率的电气装置用正极材料。解决问题的手段公开了由式（1）表示的电气装置用正极材料：aLi [Li1 / 3Mn2 / 3] O2。（1-a）Li [NixCoyMn1-xy] O2 （1）（其中0

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