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71. 发明申请

US20130295811A1 CARBON-FIBER-PRECURSOR FIBER BUNDLE, CARBON FIBER BUNDLE, AND USES THEREOF 有权
标题翻译：碳纤维前纤纤维布，碳纤维布及其用途
公开(公告)号：US20130295811A1
公开(公告)日：2013-11-07
申请号：US13879278
申请日：2011-10-13
申请人： Yuusuke Shinmen , Norifumi Hirota , Atsushi Nakajima , Naoki Aoyama , Naomasa Matsuyama , Takeshi Nii , Akiyoshi Kogame , Yasuyuki Fujii , Yoshiko Irie , Harumi Matsuda , Takayuki Kiriyama , Teppei Miura , Takuya Teranishi , Shouhei Mori , Manabu Kaneko , Kiharu Numata , Masahiro Ichino , Shigekazu Takeda , Takayuki Kobayashi , Toshiyuki Itou , Masahiro Hata , Hiroyuki Nakao , Kenichi Watanabe
发明人： Yuusuke Shinmen , Norifumi Hirota , Atsushi Nakajima , Naoki Aoyama , Naomasa Matsuyama , Takeshi Nii , Akiyoshi Kogame , Yasuyuki Fujii , Yoshiko Irie , Harumi Matsuda , Takayuki Kiriyama , Teppei Miura , Takuya Teranishi , Shouhei Mori , Manabu Kaneko , Kiharu Numata , Masahiro Ichino , Shigekazu Takeda , Takayuki Kobayashi , Toshiyuki Itou , Masahiro Hata , Hiroyuki Nakao , Kenichi Watanabe
IPC分类号： D01F9/12 , B32B37/14 , F27D7/00
CPC分类号： D01F9/12 , B29C70/44 , B32B37/14 , C08J5/042 , C08J5/24 , C08J2363/00 , D01D5/096 , D01D5/253 , D01F6/38 , D01F9/225 , F27D7/00 , Y10T428/26 , Y10T428/298 , Y10T442/3089
摘要： Provided are: a carbon fiber bundle which has a large value of single-fiber fineness and excellent productivity and which, despite this, contains few interlaced single fibers therein and has excellent spreadability; and precursor fibers which are suitable for use in producing the carbon fiber bundle. The precursor fibers are a carbon-fiber-precursor acrylic fiber bundle which comprises a polyacrylonitrile copolymer comprising 95-99 mol % acrylonitrile units and 1-5 mol % hydroxyalkyl (meth)acrylate units and which has a single-fiber fineness of 1.5-5.0 dtex. In the acrylic fiber bundle, the cross-section of each single fiber which is perpendicular to the fiber axis has a shape that has a roundness of 0.9 or less. The roundness is a value determined using equation (1) where S and L are the cross-sectional area and the circumferential length, respectively, of a single fiber which are obtained by examining, with an SEM, the cross-section of the single fiber which is perpendicular to the fiber axis and analyzing the obtained image. Roundness=4pS/L2 (1)
摘要翻译：提供：具有大的单纤维细度值和优异的生产率的碳纤维束，尽管如此，它在其中包含很少的交错单纤维并且具有优异的铺展性; 和适用于生产碳纤维束的前体纤维。前体纤维是碳纤维前体丙烯酸纤维束，其包含包含95-99mol％丙烯腈单元和1-5mol％（甲基）丙烯酸羟烷基酯单元的聚丙烯腈共聚物，其单纤维细度为1.5-5.0 dtex 在丙烯酸系纤维束中，与纤维轴垂直的各单纤维的截面为圆度为0.9以下的形状。圆度是使用公式（1）确定的值，其中S和L分别是通过用SEM检查单根纤维的横截面而获得的单根纤维的横截面面积和圆周长度其垂直于纤维轴并分析所获得的图像。圆度= 4pS / L2（1）

72. 发明申请

US20120319281A1 SEMICONDUCTOR DEVICE HAVING GROOVE-SHAPED VIA-HOLE 有权
标题翻译：具有沟槽形状的通孔的半导体器件
公开(公告)号：US20120319281A1
公开(公告)日：2012-12-20
申请号：US13549006
申请日：2012-07-13
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L23/528 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/76804 , H01L21/76843 , H01L23/481 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L23/5283 , H01L23/53204 , H01L23/53223 , H01L23/53228 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L23/562 , H01L23/58 , H01L23/585 , H01L29/0607 , H01L29/0611 , H01L29/0619 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.
摘要翻译：半导体器件具有形成在衬底10上的绝缘膜40,42; 埋置在绝缘膜40,42的至少表面侧的互连件58; 绝缘膜60,62形成在绝缘膜42上并且包括孔形通孔60和具有以直角弯曲的图案的槽形通孔66a; 以及埋入孔形通孔60和槽形通孔66a中的埋入导体70,72a。形成沟槽状的通孔66a的宽度小于孔状通孔66的宽度。可以防止埋入导体的填充不充分和层间绝缘膜的开裂。导体插头上的步骤可以减少。因此，可以防止与上部互连层的不良接触以及在形成膜中发生的问题。

73. 发明授权

US08323560B2 Automobile high-strength electric resistance welded steel pipe with excellent low-temperature impact properties and method of manufacturing the same 有权
标题翻译：汽车高强度电阻焊钢管具有优良的低温冲击性能及其制造方法
公开(公告)号：US08323560B2
公开(公告)日：2012-12-04
申请号：US12036631
申请日：2008-02-25
申请人： Motoo Satou , Yukihiro Utsumi , Kenichi Watanabe
发明人： Motoo Satou , Yukihiro Utsumi , Kenichi Watanabe
IPC分类号： C22C38/20 , C21D1/42 , C21D1/18 , B23K11/00
CPC分类号： B23K11/0873 , B23K11/16 , B23K2101/006 , B23K2103/04
摘要： Disclosed is a high-strength electric resistance welded steel pipe which is manufacture from a steel sheet containing, on mass basis, 0.2% to 0.4% C, 0.05% to 0.5% Si, 0.5% to 2.5% Mn, 0.025% or less P, 0.01% or less S, 0.01% to 0.15% or Al, 0.01% to 2% Cu, 0.05% to 2% Cr, 0.005% to 0.2% Ti, and 0.0002% to 0.005% B, with the remainder being iron and inevitable impurities. The steel pipe has a tensile strength of 1750 N/mm2 or more, a 0.1%-proof stress of 1320 N/mm2 or more, and a Charpy impact value at a testing temperature of minus 40° C. of 50 J/cm2 or more.
摘要翻译：本发明公开了一种高质量电阻焊钢管，其由含有0.2〜0.4％C，0.05〜0.5％Si，0.5〜2.5％Mn，0.025％以下P，，0.01％以下的S，0.01〜0.15％的Al，0.01〜2％的Cu，0.05〜2％的Cr，0.005〜0.2％的Ti和0.0002〜0.005％的B，其余为铁和不可避免的杂质。该钢管的拉伸强度为1750N / mm 2以上，0.1％保护应力为1320N / mm 2以上，在试验温度为零下40℃的夏氏冲击值为50J / cm 2，更多。

74. 发明申请

US20120280396A1 SEMICONDUCTOR DEVICE HAVING GROOVE-SHAPED VIA-HOLE 有权
公开(公告)号：US20120280396A1
公开(公告)日：2012-11-08
申请号：US13548911
申请日：2012-07-13
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L23/522
CPC分类号： H01L21/76877 , H01L21/76804 , H01L21/76843 , H01L23/481 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L23/5283 , H01L23/53204 , H01L23/53223 , H01L23/53228 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L23/562 , H01L23/58 , H01L23/585 , H01L29/0607 , H01L29/0611 , H01L29/0619 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

75. 发明申请

US20120273969A1 SEMICONDUCTOR DEVICE HAVING GROOVE-SHAPED VIA-HOLE 有权
公开(公告)号：US20120273969A1
公开(公告)日：2012-11-01
申请号：US13548792
申请日：2012-07-13
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L23/48
CPC分类号： H01L21/76877 , H01L21/76804 , H01L21/76843 , H01L23/481 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L23/5283 , H01L23/53204 , H01L23/53223 , H01L23/53228 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L23/562 , H01L23/58 , H01L23/585 , H01L29/0607 , H01L29/0611 , H01L29/0619 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

76. 发明申请

US20120273956A1 SEMICONDUCTOR DEVICE HAVING GROOVE-SHAPED VIA-HOLE 有权
公开(公告)号：US20120273956A1
公开(公告)日：2012-11-01
申请号：US13548857
申请日：2012-07-13
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L23/522
CPC分类号： H01L21/76877 , H01L21/76804 , H01L21/76843 , H01L23/481 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L23/5283 , H01L23/53204 , H01L23/53223 , H01L23/53228 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L23/562 , H01L23/58 , H01L23/585 , H01L29/0607 , H01L29/0611 , H01L29/0619 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

77. 发明授权

US08295393B2 Device and method for transmitting/receiving pulse signal 有权
标题翻译：发送/接收脉冲信号的装置和方法
公开(公告)号：US08295393B2
公开(公告)日：2012-10-23
申请号：US12232104
申请日：2008-09-10
申请人： Kenichi Watanabe , Yasunobu Asada , Shinji Ogawa
发明人： Kenichi Watanabe , Yasunobu Asada , Shinji Ogawa
IPC分类号： H04K1/02 , H04L25/03
CPC分类号： G01S15/96 , G01S7/526 , G01S15/104
摘要： A pulse signal transmitting/receiving device is provided. The device includes a signal generating module for generating a transmitting signal including an amplitude-modulated chirp signal, and a reference signal including a chirp signal having a frequency that changes similarly to that of the transmitting signal, a transmitting module for transmitting a pulse having approximately the same waveform as that of the transmitting signal, a receiving module for receiving an echo signal that is the transmitting pulse reflected from a detection target object, a compensating module for extending a dynamic range of the echo signal received by the receiving module, and a pulse compressing module for outputting a pulse-compressed echo signal, wherein the pulse compression is performed by a correlation calculation between the echo signal having the dynamic range extended by the compensating module, and the reference signal.
摘要翻译：提供脉冲信号发送/接收装置。该装置包括：信号产生模块，用于产生包括幅度调制线性调频信号的发射信号;以及参考信号，该参考信号包括具有与发送信号类似的频率的啁啾信号;发送模块，用于发送具有近似与发送信号相同的波形，用于接收作为从检测目标对象反射的发送脉冲的回波信号的接收模块，用于扩展由接收模块接收的回波信号的动态范围的补偿模块，以及脉冲压缩模块，用于输出脉冲压缩的回波信号，其中通过在补偿模块扩展的动态范围的回波信号与参考信号之间的相关计算来执行脉冲压缩。

78. 发明申请

US20120208973A1 POLYSILOXANE COMPOUND AND METHOD OF PRODUCING THE SAME 有权
标题翻译：聚硅氧烷化合物及其制造方法
公开(公告)号：US20120208973A1
公开(公告)日：2012-08-16
申请号：US13455442
申请日：2012-04-25
申请人： Nobumasa OOTAKE , Kazuhiro Yoshida , Kenichi Watanabe , Yasuhito Yamaryo
发明人： Nobumasa OOTAKE , Kazuhiro Yoshida , Kenichi Watanabe , Yasuhito Yamaryo
IPC分类号： C08F14/18 , C08F36/00 , C07F7/21 , C08G77/04
CPC分类号： C08G77/04 , C08G77/14
摘要： A polysiloxane represented by the formula (1) or (2): where R, R1, R2, m and n are defined in the specification.
摘要翻译：由式（1）或（2）表示的聚硅氧烷：其中R，R 1，R 2，m和n在说明书中定义。

79. 发明申请

US20120086105A1 SEMICONDUCTOR DEVICE HAVING CAPACITOR CAPABLE OF REDUCING ADDITIONAL PROCESSES AND ITS MANUFACTURE METHOD 有权
标题翻译：具有能够减少额外处理能力的电容器的半导体器件及其制造方法
公开(公告)号：US20120086105A1
公开(公告)日：2012-04-12
申请号：US13330630
申请日：2011-12-19
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L29/92
CPC分类号： H01L23/5223 , H01L21/76802 , H01L21/76832 , H01L21/76834 , H01L2924/0002 , H01L2924/00
摘要： A first capacitor recess and a wiring trench are formed through an interlayer insulating film. A lower electrode fills the first capacitor recess, and a first wiring fills the wiring trench. An etching stopper film and a via layer insulating film are disposed over the interlayer insulating film. A first via hole extends through the via layer insulating film and etching stopper film and reaches the first wiring, and a first plug fills the first via hole. A second capacitor recess is formed through the via layer insulating film, the second capacitor recess at least partially overlapping the lower electrode, as viewed in plan. The upper electrode covers the bottom and side surfaces of the second capacitor recess. A capacitor is constituted of the upper electrode, etching stopper film and lower electrode. A second wring connected to the first plug is formed over the via layer insulating film.
摘要翻译：通过层间绝缘膜形成第一电容器凹部和布线沟槽。下部电极填充第一电容器凹部，并且第一布线填充布线沟槽。蚀刻停止膜和通孔层绝缘膜设置在层间绝缘膜上。第一通孔延伸穿过通孔层绝缘膜和蚀刻阻挡膜并到达第一布线，并且第一插头填充第一通孔。通过通孔层绝缘膜形成第二电容器凹部，第二电容器凹部至少部分地与下电极重叠，如图所示。上电极覆盖第二电容器凹部的底表面和侧表面。电容器由上电极，蚀刻停止膜和下电极构成。连接到第一插头的第二连接件形成在通孔层绝缘膜上。

80. 发明授权

US08071015B2 Process for producing porous metal body 有权
标题翻译：生产多孔金属体的方法
公开(公告)号：US08071015B2
公开(公告)日：2011-12-06
申请号：US12405367
申请日：2009-03-17
申请人： Tomohiro Wada , Tomoyuki Haneji , Shinichi Takahashi , Kiichi Kanda , Kenichi Watanabe
发明人： Tomohiro Wada , Tomoyuki Haneji , Shinichi Takahashi , Kiichi Kanda , Kenichi Watanabe
IPC分类号： B22F3/11
CPC分类号： B22F3/1137 , B22F3/1021 , B22F2999/00 , B22F2201/04 , B22F2201/10 , B22F2201/20 , B22F2201/013
摘要： Disclosed is a process of producing a porous metal body containing a metal component which is likely to be oxidized, by which process the amounts of residual carbon and residual oxygen therein are decreased, and by which the performance of the product porous body can be largely promoted. The process for producing a porous metal body by sintering a material of the porous metal body, which material is obtained by coating a slurry containing a metal powder and an organic binder on an organic porous aggregate, comprises a defatting step of treating the material of the porous metal body at a temperature not higher than 650° C. in an atmosphere containing carbon monoxide and carbon dioxide; a decarbonization step of treating the material of the porous metal body after the defatting step in an inert atmosphere or vacuum atmosphere at a temperature not higher than sintering temperature; and a sintering step of retaining the material of the porous metal body after the decarbonization step in an inert atmosphere, vacuum atmosphere, hydrogen atmosphere, or in a reducing atmosphere containing hydrogen gas and an inert gas at a temperature not higher than the melting point of the metal powder.
摘要翻译：公开了一种生产含有可能被氧化的金属成分的多孔金属体的方法，通过该方法可以减少残留碳和残余氧的量，从而可以大大促进产物多孔体的性能。通过烧结多孔金属体的材料来制造多孔金属体的方法，该材料通过将含有金属粉末和有机粘合剂的浆料涂覆在有机多孔聚集体上而获得，该方法包括：脱脂步骤，在含有一氧化碳和二氧化碳的气氛中，不高于650℃的多孔金属体; 在惰性气氛或真空气氛中，在不高于烧结温度的温度下，在脱脂步骤之后处理多孔金属体的材料的脱碳步骤; 在惰性气氛，真空气氛，氢气氛或含有氢气和惰性气体的还原气氛中，在不高于熔点的温度的温度下，将脱碳后的多孔金属体的材料保持在金属粉末。

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