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    • 72. 发明授权
    • Organic EL display device, and method for driving the organic EL display device
    • 有机EL显示装置及驱动有机EL显示装置的方法
    • US07649512B2
    • 2010-01-19
    • US10590772
    • 2005-02-02
    • Junichi Maruyama
    • Junichi Maruyama
    • G09G3/30
    • G09G3/3216G09G3/2014G09G3/3266G09G2320/0223G09G2320/0233G09G2320/041G09G2360/16
    • Scanning switch means 21 to 2m can connect scanning lines S1 to Sm freely to a first potential or a second potential. Drive switch means 71 to 7n can connect drive lines D1 to Dn freely to a drive current source 70 or an off potential. Control means 8 connects the scanning switch means 21 to 2m sequentially with the first potential to select the scanning lines S1 to Sm sequentially and to control the connected states of the drive switch means 71 to 7n. In accordance with the number of the drive lines D1 to Dn to be connected to the drive current source 70, the control means 8 changes the resistances of the scanning switch means 21 to 2m corresponding to the scanning lines S1 to Sm connected to the second potential to become the unselected state, into at least two stages.
    • 扫描开关装置21至2m可以将扫描线S1至Sm自由地连接到第一电位或第二电位。 驱动开关装置71至7n可以将驱动线D1至Dn自由地连接到驱动电流源70或关闭电位。 控制装置8依次将扫描开关装置21与2m依次连接,以顺序地选择扫描线S1至Sm,并控制驱动开关装置71至7n的连接状态。 根据要连接到驱动电流源70的驱动线D1至Dn的数量,控制装置8将扫描开关装置21的电阻改变为与连接到第二电位的扫描线S1至Sm相对应的2m 成为未选择的国家,进入至少两个阶段。
    • 73. 发明申请
    • NONVOLATILE MEMORY
    • 非易失性存储器
    • US20090187702A1
    • 2009-07-23
    • US12409386
    • 2009-03-23
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G06F12/02G06F12/00
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 77. 发明申请
    • NONVOLATILE MEMORY
    • 非易失性存储器
    • US20050007860A1
    • 2005-01-13
    • US10914363
    • 2004-08-10
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G06F12/16G06F12/02G11C16/02G11C16/06G11C16/34G11C29/00G11C29/42G11C8/00
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 79. 发明授权
    • Impact type clamping apparatus
    • 冲击式夹紧装置
    • US5366026A
    • 1994-11-22
    • US112362
    • 1993-08-27
    • Junichi MaruyamaTeruo FukumuraToru Takeuchi
    • Junichi MaruyamaTeruo FukumuraToru Takeuchi
    • B23P19/06B25B23/14B25B23/151G05D17/02
    • G05D17/02B23P19/066B25B23/1405
    • In an impact type clamping apparatus including a motor unit for generating a pulsatory driving torque, a main spindle driven by said pulsatory driving torque to rotate a fastening member, a detecting unit for detecting a pulsatory torque applied to the main spindle, a calculating circuit for calculating a clamping force in accordance with a peak value of the pulsatory torque, and a control unit for stopping the operation of said motor unit when the calculated clamping force exceeds a desired clamping force, said clamping force is calculated not only from the peak value of the pulsatory torque but also from an increasing coefficient which represents a relationship between the peak value of the pulsatory torque and an increment of the clamping force. The increasing coefficient is gradually decreased in accordance with the increase in the clamping force, so that the clamping force can be calculated very accurately and the fastening member can be clamped with an actual clamping force which is very close to the desired clamping force.
    • 在包括用于产生脉动驱动扭矩的马达单元的冲击式夹紧装置中,由所述脉动驱动扭矩驱动的主轴使紧固构件旋转的检测单元,用于检测施加于主轴的脉动转矩的检测单元, 根据脉动扭矩的峰值计算夹紧力;以及控制单元,用于当计算出的夹紧力超过期望的夹紧力时停止所述马达单元的操作,所述夹紧力不仅从 脉动转矩也来自表示脉动转矩的峰值与夹紧力的增量之间的关系的增加系数。 根据夹紧力的增加,增加的系数逐渐减小,从而可以非常精确地计算夹紧力,并且可以以非常接近期望夹紧力的实际夹紧力夹紧紧固构件。