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1. 发明授权

US07817480B2 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US07817480B2
公开(公告)日：2010-10-19
申请号：US12409386
申请日：2009-03-23
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C5/14
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

2. 发明授权

US07366034B2 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US07366034B2
公开(公告)日：2008-04-29
申请号：US11797842
申请日：2007-05-08
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C7/10
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

3. 发明申请

US20110283054A1 NONVOLATILE MEMORY 有权
标题翻译：非易失性存储器
公开(公告)号：US20110283054A1
公开(公告)日：2011-11-17
申请号：US13086383
申请日：2011-04-13
申请人： KENJI KOZAKAI , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： KENJI KOZAKAI , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

4. 发明申请

US20110022913A1 NONVOLATILE MEMORY 有权
公开(公告)号：US20110022913A1
公开(公告)日：2011-01-27
申请号：US12896016
申请日：2010-10-01
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G06F1/26 , G06F11/07
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

5. 发明授权

US07525852B2 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US07525852B2
公开(公告)日：2009-04-28
申请号：US12048208
申请日：2008-03-13
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C5/14
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

6. 发明申请

US20070206418A1 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US20070206418A1
公开(公告)日：2007-09-06
申请号：US11797842
申请日：2007-05-08
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C29/00
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

7. 发明授权

US07230859B2 Nonvolatile memory 有权
公开(公告)号：US07230859B2
公开(公告)日：2007-06-12
申请号：US11330233
申请日：2006-01-12
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C7/10
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

8. 发明授权

US06868032B2 Nonvolatile memory 有权
公开(公告)号：US06868032B2
公开(公告)日：2005-03-15
申请号：US10914363
申请日：2004-08-10
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G06F12/16 , G06F12/02 , G11C16/02 , G11C16/06 , G11C16/34 , G11C29/00 , G11C29/42 , G11C8/00
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

9. 发明授权

US06788575B2 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US06788575B2
公开(公告)日：2004-09-07
申请号：US10667505
申请日：2003-09-23
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C1606
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据。

10. 发明授权

US07933158B2 Nonvolatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US07933158B2
公开(公告)日：2011-04-26
申请号：US12896016
申请日：2010-10-01
申请人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
发明人： Kenji Kozakai , Takeshi Nakamura , Tatsuya Ishii , Motoyasu Tsunoda , Shinya Iguchi , Junichi Maruyama
IPC分类号： G11C5/14
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/06 , G06F2212/1036 , G11C16/04 , G11C16/10 , G11C16/349 , G11C29/44 , G11C29/76 , G11C2029/0409
摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
摘要翻译：对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免由于管理和地址转换信息被破坏，系统无法运行的异常状态。非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

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