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71. 发明申请

US20100108977A1 NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US20100108977A1
公开(公告)日：2010-05-06
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00 , H01L21/768 , H01L21/31
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

72. 发明申请

US20090184307A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090184307A1
公开(公告)日：2009-07-23
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态非晶态。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

73. 发明申请

US20090146128A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20090146128A1
公开(公告)日：2009-06-11
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

74. 发明授权

US08926114B2 Light emitting device package, light source module, backlight unit, display apparatus, television set, and illumination apparatus 有权
标题翻译：发光器件封装，光源模块，背光单元，显示装置，电视机和照明装置
公开(公告)号：US08926114B2
公开(公告)日：2015-01-06
申请号：US13098698
申请日：2011-05-02
申请人： Jung Kyu Park , Young Sam Park , Sung A Choi , Jeong Eun Lim , Jin Mo Kim , Man Ki Hong , Tae Heon Han , Churl Wung Shin , Young Taek Kim , Dae Woon Hong , Young Geun Jun , Jung Kyu Kook
发明人： Jung Kyu Park , Young Sam Park , Sung A Choi , Jeong Eun Lim , Jin Mo Kim , Man Ki Hong , Tae Heon Han , Churl Wung Shin , Young Taek Kim , Dae Woon Hong , Young Geun Jun , Jung Kyu Kook
IPC分类号： G09F13/04 , G09F13/08 , G02B19/00 , G02F1/1335 , H01L33/58
CPC分类号： F21V11/00 , F21K9/60 , F21Y2115/10 , G02B19/0014 , G02B19/0061 , G02B19/0071 , G02F1/133603 , G02F1/133606 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light source module, a backlight unit, a display apparatus, a television set, and an illumination apparatus are provided. The light source module includes: one or more light source units including a light emitting element emitting light when electricity is applied thereto; and an optical sheet disposed above the light source units and exhibiting bidirectional transmittance distribution function characteristics having first and second peaks at radiation angles less than 0° and greater than 0°.
摘要翻译：提供了光源模块，背光单元，显示装置，电视机和照明装置。光源模块包括：一个或多个光源单元，包括当向其施加电力时发光的发光元件; 以及设置在光源单元上方并且在小于0°且大于0°的辐射角处具有第一和第二峰的双向透射分布函数特性的光学片。

75. 发明申请

US20130139864A1 THERMOELECTRIC DEVICES 有权
标题翻译：热电装置
公开(公告)号：US20130139864A1
公开(公告)日：2013-06-06
申请号：US13611189
申请日：2012-09-12
申请人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
发明人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
IPC分类号： H01L35/32 , H01L35/14 , H01L35/16 , B82Y99/00
CPC分类号： H01L35/32 , B82Y30/00
摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.
摘要翻译：提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。声子可能被粗糙的侧面散射，从而降低了装置的热导率。电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。光滑的侧面可以用于电子的流动路径。结果，在热电装置中，可以降低导热性并且可以保持导电性。

76. 发明授权

US07920413B2 Apparatus and method for writing data to phase-change memory by using power calculation and data inversion 有权
标题翻译：通过使用功率计算和数据反演将数据写入相变存储器的装置和方法
公开(公告)号：US07920413B2
公开(公告)日：2011-04-05
申请号：US12040137
申请日：2008-02-29
申请人： Byoung-Gon Yu , Byung-Do Yang , Seung-Yun Lee , Sung-Min Yoon , Young Sam Park , Nam Yeal Lee
发明人： Byoung-Gon Yu , Byung-Do Yang , Seung-Yun Lee , Sung-Min Yoon , Young Sam Park , Nam Yeal Lee
IPC分类号： G11C11/00
CPC分类号： G11C7/1006 , G11C13/0004 , G11C13/0038 , G11C13/0069 , G11C2013/0076 , G11C2211/5647
摘要： Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.
摘要翻译：提供了一种通过使用写入功率计算和数据反转功能将数据写入相变随机存取存储器（PRAM）的装置和方法，更具体地，涉及一种用于写入数据的装置和方法，该装置和方法可通过计算功率来最小化功耗在输入原始数据或反相数据被写入PRAM并存储消耗较少功率的数据时消耗。由于需要大电流长时间流动，所以PRAM消耗大量的功率以便将数据存储在存储单元中。根据本发明，由于在写入值为0的数据和值为1的数据时，PRAM消耗不同的功率量，所以当输入原始数据被存储时消耗的功率和当输入的原始数据被反相时消耗的功率并将其进行存储，将数据作为字单元写入PRAM时，存储具有较小功耗的数据，从而能够降低PRAM的功耗。

77. 发明授权

US07911227B2 Programmable logic block of FPGA using phase-change memory device 有权
标题翻译：使用相变存储器件的FPGA的可编程逻辑块
公开(公告)号：US07911227B2
公开(公告)日：2011-03-22
申请号：US12633731
申请日：2009-12-08
申请人： Byoung Gon Yu , Yong-Joo Kim , Sung Min Yoon , Seung-Yun Lee , Young Sam Park , Soonwon Jung
发明人： Byoung Gon Yu , Yong-Joo Kim , Sung Min Yoon , Seung-Yun Lee , Young Sam Park , Soonwon Jung
IPC分类号： G06F7/38 , H03K19/173
CPC分类号： H03K19/17784 , H03K19/17728 , H03K19/17792
摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.
摘要翻译：提供了现场可编程门阵列（FPGA）的可编程逻辑块。可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。上变相存储器件和下变相存储器件的电阻值被单独编程。

78. 发明授权

US07884347B2 Phase-change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07884347B2
公开(公告)日：2011-02-08
申请号：US12425152
申请日：2009-04-16
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L29/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要翻译：提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层，形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

79. 发明申请

US20080135825A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20080135825A1
公开(公告)日：2008-06-12
申请号：US11936503
申请日：2007-11-07
申请人： Seung Yun Lee , Sung Min Yoon , Nam-Yeal Lee , Young Sam Park , Byoung Gon Yu
发明人： Seung Yun Lee , Sung Min Yoon , Nam-Yeal Lee , Young Sam Park , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L21/8239
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1666
摘要： Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件包括设置在半导体衬底上的晶体管，包括栅电极和设置在栅电极两侧的第一和第二杂质区; 电连接到第一杂质区的位线; 以及电连接到所述第二杂质区的相变电阻器，其中所述相变电阻器包括：由掺杂的SiGe层形成的下电极; 与下电极接触的相变层; 以及连接到所述相变层的上电极。下电极由掺杂的SiGe层形成，其具有高电阻率和低热导率，从而降低整个相变存储器件的复位电流和功耗。

80. 发明申请

US20070139931A1 LED package and backlight unit using the same 有权
标题翻译： LED封装和背光单元使用相同
公开(公告)号：US20070139931A1
公开(公告)日：2007-06-21
申请号：US11594756
申请日：2006-11-09
申请人： Dae Yeon Kim , Young Sam Park
发明人： Dae Yeon Kim , Young Sam Park
IPC分类号： F21V7/00
CPC分类号： H01L33/58 , H01L33/46
摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.
摘要翻译：本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹槽中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

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