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1. 发明授权

US07547913B2 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same 有权
标题翻译：使用Sb-Se金属合金的相变存储器件及其制造方法
公开(公告)号：US07547913B2
公开(公告)日：2009-06-16
申请号：US12063991
申请日：2006-08-30
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L29/08
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
摘要翻译：提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。相变记忆装置包括与通过孔露出并填充孔的发热电极层接触的锑（Sb） - 硒（Se）硫族化物SbxSe100-x相变材料层。由于在相变材料层中使用SbxSe100-x，所以可以制造比GST存储器件更高速，更低功耗的相变存储器件。

2. 再颁专利

USRE45356E1 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same 有权
公开(公告)号：USRE45356E1
公开(公告)日：2015-02-03
申请号：US13161932
申请日：2011-06-16
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L29/08
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

3. 发明授权

US07417891B2 Phase change memory device having semiconductor laser unit 有权
标题翻译：具有半导体激光器单元的相变存储器件
公开(公告)号：US07417891B2
公开(公告)日：2008-08-26
申请号：US11635279
申请日：2006-12-07
申请人： Byoung Gon Yu , Seung Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Byoung Gon Yu , Seung Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： G11C11/00
CPC分类号： H01L45/1213 , G11C13/0004 , G11C13/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/1666
摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
摘要翻译：提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。

4. 发明申请

US20090184307A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090184307A1
公开(公告)日：2009-07-23
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态非晶态。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

5. 发明申请

US20080135825A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20080135825A1
公开(公告)日：2008-06-12
申请号：US11936503
申请日：2007-11-07
申请人： Seung Yun Lee , Sung Min Yoon , Nam-Yeal Lee , Young Sam Park , Byoung Gon Yu
发明人： Seung Yun Lee , Sung Min Yoon , Nam-Yeal Lee , Young Sam Park , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L21/8239
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1666
摘要： Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件包括设置在半导体衬底上的晶体管，包括栅电极和设置在栅电极两侧的第一和第二杂质区; 电连接到第一杂质区的位线; 以及电连接到所述第二杂质区的相变电阻器，其中所述相变电阻器包括：由掺杂的SiGe层形成的下电极; 与下电极接触的相变层; 以及连接到所述相变层的上电极。下电极由掺杂的SiGe层形成，其具有高电阻率和低热导率，从而降低整个相变存储器件的复位电流和功耗。

6. 发明授权

US07977674B2 Phase change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07977674B2
公开(公告)日：2011-07-12
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L29/08 , H01L29/18 , H01L29/02 , H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变州。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

7. 发明申请

US20080237564A1 Phase-Change Memory Device Using Sb-Se Metal Alloy and Method of Fabricating the Same 有权
标题翻译：使用Sb-Se金属合金的相变存储器件及其制造方法
公开(公告)号：US20080237564A1
公开(公告)日：2008-10-02
申请号：US12063991
申请日：2006-08-30
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
摘要翻译：提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。相变存储器件包括与发热电极层接触的锑（Sb） - 硒（Se）硫属元素化物Sb>> 100-x>相变材料层通过孔暴露并填充孔。由于在相变材料层中使用Sb Se <100> x 比GST更高速度，低功耗的相变存储器件可以制造存储器件。

8. 发明授权

US07989793B2 Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same 有权
标题翻译：使用相变材料的电气装置，使用固态反应的相变存储装置及其制造方法
公开(公告)号：US07989793B2
公开(公告)日：2011-08-02
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

9. 发明授权

US08901532B2 Non-volatile programmable device including phase change layer and fabricating method thereof 有权
标题翻译：包括相变层的非易失性可编程装置及其制造方法
公开(公告)号：US08901532B2
公开(公告)日：2014-12-02
申请号：US13466411
申请日：2012-05-08
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24 , G11C13/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

10. 发明授权

US08470719B2 Method for fabricating phase change memory device using solid state reaction 有权
标题翻译：使用固态反应制造相变存储器件的方法
公开(公告)号：US08470719B2
公开(公告)日：2013-06-25
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L21/461 , H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

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