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1. 发明授权

US08445887B2 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US08445887B2
公开(公告)日：2013-05-21
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

2. 发明申请

US20100108977A1 NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US20100108977A1
公开(公告)日：2010-05-06
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00 , H01L21/768 , H01L21/31
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

3. 发明授权

US07884347B2 Phase-change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07884347B2
公开(公告)日：2011-02-08
申请号：US12425152
申请日：2009-04-16
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L29/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要翻译：提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层，形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

4. 发明申请

US20090146128A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20090146128A1
公开(公告)日：2009-06-11
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

5. 发明授权

US08470719B2 Method for fabricating phase change memory device using solid state reaction 有权
标题翻译：使用固态反应制造相变存储器件的方法
公开(公告)号：US08470719B2
公开(公告)日：2013-06-25
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L21/461 , H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

6. 发明授权

US07989793B2 Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same 有权
标题翻译：使用相变材料的电气装置，使用固态反应的相变存储装置及其制造方法
公开(公告)号：US07989793B2
公开(公告)日：2011-08-02
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

7. 发明申请

US20120217465A1 NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF 有权
标题翻译：非易失性可编程器件，包括相变层及其制造方法
公开(公告)号：US20120217465A1
公开(公告)日：2012-08-30
申请号：US13466411
申请日：2012-05-08
申请人： Seung Yun LEE , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun LEE , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

8. 发明授权

US07977674B2 Phase change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07977674B2
公开(公告)日：2011-07-12
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L29/08 , H01L29/18 , H01L29/02 , H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变州。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

9. 发明申请

US20100148141A1 NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：非易失性可编程器件，包括相变层及其制造方法
公开(公告)号：US20100148141A1
公开(公告)日：2010-06-17
申请号：US12491465
申请日：2009-06-25
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

10. 发明申请

US20080237564A1 Phase-Change Memory Device Using Sb-Se Metal Alloy and Method of Fabricating the Same 有权
标题翻译：使用Sb-Se金属合金的相变存储器件及其制造方法
公开(公告)号：US20080237564A1
公开(公告)日：2008-10-02
申请号：US12063991
申请日：2006-08-30
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
摘要翻译：提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。相变存储器件包括与发热电极层接触的锑（Sb） - 硒（Se）硫属元素化物Sb>> 100-x>相变材料层通过孔暴露并填充孔。由于在相变材料层中使用Sb Se <100> x 比GST更高速度，低功耗的相变存储器件可以制造存储器件。

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