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71. 发明授权

US07884259B2 Absorbent article 有权
标题翻译：吸收制品
公开(公告)号：US07884259B2
公开(公告)日：2011-02-08
申请号：US11630913
申请日：2005-06-28
申请人： Hiroyuki Hanao , Taira Kubo , Yoshiharu Miyashita , Tomotsugu Matsui , Akinori Fukae , Toshikazu Maeda , Hiroyuki Yano , Takeshi Furudoi
发明人： Hiroyuki Hanao , Taira Kubo , Yoshiharu Miyashita , Tomotsugu Matsui , Akinori Fukae , Toshikazu Maeda , Hiroyuki Yano , Takeshi Furudoi
IPC分类号： A61F13/15
CPC分类号： A61F13/537 , A61F13/15203 , A61F2013/530518 , A61F2013/530547 , A61F2013/530598 , A61F2013/5307 , A61F2013/530708 , A61F2013/530715 , A61F2013/530729 , A61F2013/530737 , A61L15/60 , Y10T428/23 , Y10T428/24479 , Y10T442/699
摘要： An absorbent article including a fiber aggregate formed by opening the tow, a super absorbent polymer particle, and a sheet covering these components. The super absorbent polymer particle are bonded to the sheet with an adhesive that is applied in a continuous plane to the entire surface or the substantially entire surface at least at the portion to be provided with the super absorbent polymer particle in this sheet.
摘要翻译：一种吸收性物品，其包括通过打开丝束形成的纤维聚集体，高吸收性聚合物颗粒和覆盖这些组分的片材。超吸收性聚合物颗粒通过在该片材中至少在要设置有超吸收性聚合物颗粒的部分的整个表面或基本上整个表面上以连续平面施加的粘合剂结合到片材上。

72. 发明申请

US20100212523A1 PRINTED ITEM CONTACT MEMBER AND MEMBER FOR PRINTING APPARATUS 审中-公开
标题翻译：印刷品联系会员和会员打印设备
公开(公告)号：US20100212523A1
公开(公告)日：2010-08-26
申请号：US12445964
申请日：2007-10-17
申请人： Hideaki Sakurai , Masahito Kaneko , Yasuharu Suda , Katsuhiko Takeda , Hiroyuki Yano
发明人： Hideaki Sakurai , Masahito Kaneko , Yasuharu Suda , Katsuhiko Takeda , Hiroyuki Yano
IPC分类号： B41F21/00
CPC分类号： B41F22/00 , B41F35/006 , B41N7/00 , B41N2207/02 , B41N2207/04
摘要： A printed item contact member 54 according to the present invention includes: a base material 50; a fixing layer 52 that is formed on the surface of the base material 50 and substantially spherical particles 51 are fixed thereto; and a remarkably thin low-surface-tension coating layer 53 that covers the surface of the fixing layer 52 having the substantially spherical particles 51 fixed thereto and that exhibits release properties with respect to a printed item. The printed item contact member exhibits high ink repellency while maintaining the micro-uneven surface structure and is free from adhesion of yarn waste or dust to the member during cleaning, and therefore can be suitably used as, for example, a member for printing device in contact with the surface of printing paper.
摘要翻译：根据本发明的印刷品接触构件54包括：基材50; 形成在基材50的表面上的固定层52和大致球形的颗粒51固定在其上; 以及非常薄的低表面张力涂层53，其覆盖固定层52的具有固定在其上的基本上球形的颗粒51的表面，并且相对于印刷品具有脱模性。印刷品接触构件在保持微不平坦表面结构的同时表现出高的拒油性，并且在清洁期间不会将纱线废弃物或灰尘附着到构件上，因此可以适当地用作例如印刷装置的构件与打印纸表面接触。

73. 发明申请

US20100093585A1 POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：使用其的半导体器件的后CMP处理液体和制造方法
公开(公告)号：US20100093585A1
公开(公告)日：2010-04-15
申请号：US12638607
申请日：2009-12-15
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C11D1/74
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂基团和四甲基氢氧化铵。树脂颗粒以0.01至1重量％的浓度掺入。处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

74. 发明申请

US20090068841A1 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
标题翻译：有机薄膜的化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US20090068841A1
公开(公告)日：2009-03-12
申请号：US12289326
申请日：2008-10-24
申请人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
发明人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
IPC分类号： H01L21/304
CPC分类号： H01L21/76808 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L27/10867
摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要翻译：公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

75. 发明授权

US07465668B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07465668B2
公开(公告)日：2008-12-16
申请号：US11296483
申请日：2005-12-08
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/7684
摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要翻译：提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜，在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

76. 发明授权

US07416942B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07416942B2
公开(公告)日：2008-08-26
申请号：US11708532
申请日：2007-02-21
申请人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/461
CPC分类号： H01L27/11543 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L27/11526
摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.
摘要翻译：提供一种制造半导体器件的方法。该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

77. 发明授权

US07332104B2 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US07332104B2
公开(公告)日：2008-02-19
申请号：US11407945
申请日：2006-04-21
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9. (D)
摘要翻译：公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d1的第一胶体粒子，第一胶体粒子的重量为w1，第二胶体粒子具有一次粒径大于第一胶体粒子的粒径，平均粒径为d2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比为d 2，d2 选择w1和w2同时满足以下条件（A）和（B），不包括d1，d2，w1和w2同时符合以下条件（C）和（D）的情况：<？在线公式描述=“ 在线公式“end =”lead“？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =”In-line Formulas“end =”tail“？> line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2）<= 0.97（B）<？in-line-formula description =“I 3线=公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 3 <= d2 / d1 <= 5（C） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2） <= 0.9。（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

78. 发明申请

US20080038504A1 Apparatus For Producing Absorbing Material, Aborbing Material And Absorbent Article 有权
标题翻译：用于生产吸收材料，吸收材料和吸收制品的设备
公开(公告)号：US20080038504A1
公开(公告)日：2008-02-14
申请号：US11630915
申请日：2005-06-28
申请人： Sadanao Manabe , Hiroyuki Hanao , Takeshi Furodoi , Akinori Fukae , Toshikazu Maeda , Hiroyuki Yano , Taira Kubo , Yoshiharu Miyashita , Tomotsugu Matsui
发明人： Sadanao Manabe , Hiroyuki Hanao , Takeshi Furodoi , Akinori Fukae , Toshikazu Maeda , Hiroyuki Yano , Taira Kubo , Yoshiharu Miyashita , Tomotsugu Matsui
IPC分类号： A61F13/49 , A61F13/15 , A61F13/53 , A61F13/472
CPC分类号： A61F13/537 , Y10T156/1343 , Y10T156/1798 , Y10T428/233
摘要： [Problem to be Solved] A shuffling hand feeling and unwanted non-uniform absorption characteristics in the case of using a tow (fiber bundle) are prevented. [Solution] An absorbent body includes a fiber aggregate 21 formed by opening the tow, a super absorbent polymer 54, and a sheet covering these components; and includes the super absorbent polymer 54 bonded to the sheet 58 with an adhesive that is applied in a continuous plane to the entire surface or the substantially entire surface of at least the portion to be provided with the super absorbent polymer 54 in this sheet 58.
摘要翻译： [待解决的问题]防止在使用丝束（纤维束）的情况下的洗牌手感和不希望的不均匀的吸收特性。 [解决方案]吸收体包括通过打开丝束形成的纤维聚集体21，高吸收性聚合物54和覆盖这些组分的片材; 并且包括用在该片材58中至少要设置有超吸收性聚合物54的部分的整个表面或基本上整个表面连续施加的粘合剂粘合到片材58上的高吸水性聚合物54。

79. 发明授权

US07307023B2 Polishing method of Cu film and method for manufacturing semiconductor device 有权
公开(公告)号：US07307023B2
公开(公告)日：2007-12-11
申请号：US11540707
申请日：2006-10-02
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/015 , B24B49/16 , B24B57/02 , C09G1/02
摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

80. 发明申请

US20070129502A1 Curable resin composition 有权
标题翻译：可固化树脂组合物
公开(公告)号：US20070129502A1
公开(公告)日：2007-06-07
申请号：US10586642
申请日：2005-01-26
申请人： Masanao Kawabe , Hiroyuki Yano , Yasuji Shichijo , Kouhei Tomari , Isamu Akiba
发明人： Masanao Kawabe , Hiroyuki Yano , Yasuji Shichijo , Kouhei Tomari , Isamu Akiba
IPC分类号： C08L71/12 , C08K3/34
CPC分类号： C08L51/003 , B32B15/08 , B32B17/04 , B32B27/18 , B32B27/26 , B32B27/28 , B32B27/285 , B32B27/302 , B32B2307/306 , B32B2307/3065 , B32B2457/08 , C08F257/02 , C08F283/06 , C08F290/06 , C08F290/062 , C08K3/013 , C08K5/0066 , C08K5/14 , C08K5/34924 , C08L53/00 , C08L71/12 , C09D153/00 , H05K1/0353 , H05K3/4626 , Y10T428/12569 , C08L2666/02 , C08L2666/14 , C08L2666/04
摘要： Provided is curable resin composition which gives a cured article excellent in chemical resistance, dielectric properties, low water-absorption, heat resistance, flame retardance, and mechanical properties and which is usable in applications such as dielectric materials, insulating materials, heat-resistant materials, and structural materials. The curable resin composition includes a component (A) which is a polyphenylene ether oligomer having a number-average molecular weight of 700 to 4,000 and having a vinyl group at both end and a component (B) which is a solvent-soluble polyfunctional vinylaromatic copolymer which has structural units derived from monomers including a divinylaromatic compound (a) and an ethylvinylaromatic compound (b) and in which the content of repeating units derived from the divinylaromatic compound (a) is 20 mol % or higher, the ratio of the amount (wt. %) of the component (A) to that (wt. %) of the component (B) being (20 to 98):(2 to 80). The composition can further contain a layered silicate, a halogenated flame retardant, etc.
摘要翻译：本发明提供了耐化学性，介电性，低吸水性，耐热性，阻燃性和机械性能优异的固化物的固化性树脂组合物，其可用于介电材料，绝缘材料，耐热材料，和结构材料。作为固化性树脂组合物，可列举数均分子量为700〜4000的聚苯醚低聚物和两末端具有乙烯基的成分（A）和作为溶剂可溶性多官能乙烯基芳香族共聚物的成分（B）其具有衍生自包括二乙烯基芳族化合物（a）和乙烯基乙烯基芳族化合物（b）的单体的结构单元，并且其中衍生自二乙烯基芳族化合物（a）的重复单元的含量为20摩尔％以上，（A）成分（B）的重量％（重量％）为（20〜98）：（2〜80）。组合物还可以含有层状硅酸盐，卤化阻燃剂等

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