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    • 72. 发明授权
    • Nonvolatile memory, IC card and data processing system
    • 非易失性存储器,IC卡和数据处理系统
    • US06687164B2
    • 2004-02-03
    • US10424855
    • 2003-04-29
    • Yuki MatsudaKenya OtaniMinoru KatoTakeo Kon
    • Yuki MatsudaKenya OtaniMinoru KatoTakeo Kon
    • G11C1604
    • G11C16/32G11C16/30
    • The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    • 本发明有助于满足在频繁重写期间优先使用的非易失性存储器的使用模式和在断开电源期间的数据保持,以及在数据保持特性中优先使用的使用模式。 控制器通过增加施加到非易失性存储单元的电压和钳位升压电压的擦除和写入处理,使得能够对非易失性存储单元进行信息存储操作,并执行选择控制,该选择控制选择 在信息存储操作期间施加的升压电压等等。 该选择控制使得能够将非易失性存储单元用作临时重写区域,并且有助于满足在断开电源期间在数据保持中优先使用的使用模式以及在数据保留中优先使用的使用模式 特性。
    • 78. 发明授权
    • Magnetic head employing a magnetic gap material composed of Cr.sub.2
O.sub.3
    • 使用由CR2O3组成的磁隙材料的磁头
    • US5164870A
    • 1992-11-17
    • US719686
    • 1991-06-25
    • Minoru KatoMichio Yanagi
    • Minoru KatoMichio Yanagi
    • G11B5/187G11B5/235
    • G11B5/235G11B5/187
    • A magnetic head comprises a pair of magnetic core half parts abutted to each other and having magnetic alloy films on both abutted surfaces, a magnetic gap material composed of laminated films formed on the abutted surface of at least one of the pair of magnetic core half parts, and welding glass welding the pair of magnetic core half parts. The laminated films are composed of an SiO.sub.2 film and a Cr.sub.2 O.sub.3 film located in sequence from the magnetic core half part side. The laminated films serve to protect the magnetic alloy film from an erosion due to the welding glass. The Cr.sub.2 O.sub.3 film ofers excellent wettability by the welding glass, thereby improving the strength of the magnetic head.
    • 磁头包括彼此抵接并在两个邻接表面上具有磁性合金膜的一对磁芯半部分,由在一对磁芯半部中的至少一个的抵接表面上形成的层压膜构成的磁隙材料 ,焊接玻璃焊接对的一对磁芯半部分。 层叠膜由从磁芯半部分侧顺序的SiO 2膜和Cr 2 O 3膜构成。 层压膜用于保护磁性合金膜免受焊接玻璃的侵蚀。 Cr2O3薄膜通过焊接玻璃具有优异的润湿性,从而提高磁头的强度。
    • 80. 发明授权
    • Zero crossing type thyristor
    • 零交叉型晶闸管
    • US4956690A
    • 1990-09-11
    • US471025
    • 1990-01-26
    • Minoru Kato
    • Minoru Kato
    • H01L29/74H03K17/725
    • H01L29/7428
    • A zero-crossing type thyristor is formed in an N-type semiconductor substrate. A first P-type base layer, a second P-type base layer, and a first P-type emitter layer are formed in a main surface of the substrate and isolated from one another by semiconductor regions of the substrate. A second N-type emitter layer is formed in the first P-type base layer, and a third N-type emitter layer is formed in the second P-type base layer. The third N-type emitter layer is electrically connected to the first P-type base layer. A fourth P-type emitter layer is formed in an opposite surface of the substrate. The second N-type emitter layer, first P-tytpe base layer, N-type semiconductor region, and fourth P-type emitter layer constitute a vertical main thyristor of the zero-crossing type thyristor, and the third N-type emitter layer, second P-type base layer, N-type semiconductor region, and first P-type emitter layer constitute a lateral driving thyristor thereof.