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71. 发明授权

US07033443B2 Gas-cooled clamp for RTP 失效
标题翻译：用于RTP的气冷钳
公开(公告)号：US07033443B2
公开(公告)日：2006-04-25
申请号：US10402809
申请日：2003-03-28
申请人： Peter L. Kellerman , Victor M. Benveniste , Frederick M. Carlson
发明人： Peter L. Kellerman , Victor M. Benveniste , Frederick M. Carlson
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/68721 , C23C16/4586 , C23C16/463 , H01L21/67109 , H01L21/6875 , Y10T279/23
摘要： The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.
摘要翻译：本发明涉及半导体热处理装置和半导体基板的热冷却方法。根据本发明的一个方面，公开了一种气冷夹和相关方法，其通常通过自由分子状态的热传导来提供衬底的冷却。气冷夹具包括夹板，该夹板具有限定其间的间隙的多个突起，其中间隙的距离或深度与其中的冷却气体的平均自由路径相关联。气冷夹具还包括压力控制系统，其可操作以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数，其中冷却气体的传热系数主要为压力的函数和基本上与间隙距离无关。

72. 发明授权

US07019314B1 Systems and methods for ion beam focusing 有权
标题翻译：离子束聚焦的系统和方法
公开(公告)号：US07019314B1
公开(公告)日：2006-03-28
申请号：US10967855
申请日：2004-10-18
申请人： Victor M. Benveniste , Peter L. Kellerman
发明人： Victor M. Benveniste , Peter L. Kellerman
IPC分类号： H01L21/324 , H01J37/317 , H01J49/30
CPC分类号： H01J37/3171 , H01J37/147
摘要： Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
摘要翻译：提供了将扫描离子束聚焦在离子注入机中的系统和方法。提供了一种束聚焦系统，包括提供相应磁场的第一和第二磁体，其协作地提供磁聚焦场，其具有通常对应于扫描离子束沿扫描方向的时变束位置的时变聚焦场中心。提出了方法，其包括提供在扫描平面中具有聚焦场中心的聚焦场，以及动态地调整聚焦场，使得聚焦场中心大体上与扫描离子束沿着扫描方向的时变束位置重合。

73. 发明授权

US06759665B2 Method and system for ion beam containment in an ion beam guide 有权
标题翻译：离子束导管中离子束收容的方法和系统
公开(公告)号：US06759665B2
公开(公告)日：2004-07-06
申请号：US09865155
申请日：2001-05-24
申请人： Victor M. Benveniste , William F. DiVergilio , John Z. Ye
发明人： Victor M. Benveniste , William F. DiVergilio , John Z. Ye
IPC分类号： H01J37317
CPC分类号： H01J37/32623 , H01J37/05 , H01J37/3171 , H01J37/32678
摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The magnets may cooperatively interact to provide a multi-cusped magnetic field along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway for a given low energy ion beam. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要翻译：公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。该设备包括安装在沿着离子束路径的通道中的质量分析磁体和适于在通道中提供多通道磁场的磁性装置，该磁性装置可以包括沿着至少一部分通道。磁体可以协同地相互作用以沿着通道的至少一部分提供多脉冲磁场。对于给定的低能量离子束，多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上。因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。

74. 发明授权

US06541781B1 Waveguide for microwave excitation of plasma in an ion beam guide 有权
标题翻译：波导用于离子束引导中的等离子体的微波激发
公开(公告)号：US06541781B1
公开(公告)日：2003-04-01
申请号：US09625718
申请日：2000-07-25
申请人： Victor M. Benveniste , John Ye , William F. DiVergilio
发明人： Victor M. Benveniste , John Ye , William F. DiVergilio
IPC分类号： G21K510
CPC分类号： H01J37/32678 , H01J37/05 , H01J37/3171
摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要翻译：公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。该装置包括安装在沿着离子束的路径的通道中的质量分析磁体，适于在通道中提供电场的电源以及适于在通道中提供多通道磁场的磁性装置，其中可以包括沿通道的至少一部分安装的多个磁体。电源和磁体可以协同地相互作用以沿着通道的至少一部分提供电子回旋共振（ECR）状态。多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上，以与给定的低能离子束的已知RF或微波频率的电场相互作用。本发明还包括质量分析器波导，其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体，从而改善ECR条件的产生。因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。

75. 发明授权

US06525326B1 System and method for removing particles entrained in an ion beam 失效
标题翻译：用于去除夹带在离子束中的颗粒的系统和方法
公开(公告)号：US06525326B1
公开(公告)日：2003-02-25
申请号：US09654381
申请日：2000-09-01
申请人： Eric R. Harrington , Victor M. Benveniste , Jeffrey A. Burgess , John Z. Ye
发明人： Eric R. Harrington , Victor M. Benveniste , Jeffrey A. Burgess , John Z. Ye
IPC分类号： H01J3730
CPC分类号： H01J3/40 , H01J37/026 , H01J37/3002 , H01J37/3171 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes an electric field generator for generating an electric field relative to a path of travel for the ion beam. A particle located in the ion beam and in a region of the electric field is charged to a polarity according to the ion beam, so that the electric field may urge the charged particle out of the ion beam.
摘要翻译：用于抑制用离子束输送污染物颗粒的系统包括用于相对于离子束的行进路径产生电场的电场发生器。位于离子束中并且在电场的区域中的粒子根据离子束被充电到极性，使得电场可以将带电粒子推出离子束。

76. 发明授权

US06476399B1 System and method for removing contaminant particles relative to an ion beam 有权
标题翻译：相对于离子束去除污染物颗粒的系统和方法
公开(公告)号：US06476399B1
公开(公告)日：2002-11-05
申请号：US09654379
申请日：2000-09-01
申请人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
发明人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
IPC分类号： H01J3730
CPC分类号： H01J37/026 , H01J37/3002 , H01J37/3171 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.
摘要翻译：用于抑制用离子束输送污染物颗粒的系统包括用于在离子束行进的区域内填充颗粒的颗粒装料系统。在相对于带电区域的下游产生电场，以便使带电粒子远离离子束的行进方向。

77. 发明授权

US6065499A Lateral stress relief mechanism for vacuum bellows 有权
标题翻译：真空波纹管侧向应力消除机构
公开(公告)号：US6065499A
公开(公告)日：2000-05-23
申请号：US217677
申请日：1998-12-21
申请人： Alexander F. Pless , Gary J. Rosen , Allan D. Weed , Ernest E. Allen , Victor M. Benveniste , Perry J. I. Justesen
发明人： Alexander F. Pless , Gary J. Rosen , Allan D. Weed , Ernest E. Allen , Victor M. Benveniste , Perry J. I. Justesen
IPC分类号： H01L21/265 , F16J3/04 , F16L51/02 , F16L11/00 , F16L11/16
CPC分类号： F16L51/025 , H01J37/16 , H01J37/3171
摘要： An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (52) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (54) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis. The second mounting portion comprises at least one sliding seal subassembly (80) for maintaining the vacuum, and a support ring (78) and a slide plate (82) located on opposite ends of the sliding seal subassembly. The slide plate and the sliding seal subassembly provide a slidable vacuum-tight mating surface therebetween.
摘要翻译：改进的波纹管组件（18）被提供用于例如离子注入机（10）。波纹管组件包括位于波纹管组件一端的第一安装部分（56），用于将波纹管组件固定地安装到第一真空室（16）上; 位于波纹管组件的相对端的第二安装部分（52），用于将波纹管组件可滑动地安装到第二真空室（15）; 和位于第一和第二安装部之间的钢质波纹管（54）。波纹管大致沿着纵向轴线（64）延伸并且沿该轴线可膨胀和收缩。第二安装部分允许波纹管组件在基本上垂直于该轴线的第一平面中相对于第二腔室径向滑动运动。第二安装部分包括用于维持真空的至少一个滑动密封子组件（80）以及位于滑动密封子组件的相对端上的支撑环（78）和滑动板（82）。滑板和滑动密封子组件在其间提供可滑动的真空密封配合表面。

78. 发明授权

US5703375A Method and apparatus for ion beam neutralization 失效
标题翻译：离子束中和的方法和装置
公开(公告)号：US5703375A
公开(公告)日：1997-12-30
申请号：US691467
申请日：1996-08-02
申请人： Jiong Chen , Victor M. Benveniste
发明人： Jiong Chen , Victor M. Benveniste
IPC分类号： C23C14/48 , H01J37/02 , H01J37/20 , H01J37/317 , H01L21/265
CPC分类号： H01J37/026 , H01J2237/0041 , H01J2237/31701
摘要： Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.
摘要翻译：用于将离子束沿着从离子源到离子注入工位的束路保持离子束的方法和装置，其中用离子束处理工件。离子束中和器位于离子处理站的上游，并且包括界定离子束路径的约束结构。位于限制结构内的电子源将电子发射到离子束中。由限制结构支撑的磁体阵列产生趋向于限制在限制结构内移动的电子的磁场。通过多个轴向细长的过滤棒在限制结构内部产生内部磁性过滤器场，所述过滤棒具有包围离子束并且大致平行于离子束路径定向取向的封装的磁体。该内部磁场限制较高能量的电子离开离子束路径，并允许较低能量的电子沿离子束漂移。

79. 发明授权

US5164599A Ion beam neutralization means generating diffuse secondary emission electron shower 失效
标题翻译：离子束中性化方法生成二次发射电子淋浴器
公开(公告)号：US5164599A
公开(公告)日：1992-11-17
申请号：US732778
申请日：1991-07-19
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： H01J37/317 , C23C14/48 , H01J37/02 , H01L21/265
CPC分类号： H01J37/026 , H01J2237/0045 , H01J2237/31701
摘要： An ion implantation featuring an improved beam neutralizer. A cylindrical electron source encircles the ion beam at a location just before the ion beam enters an implantation chamber. Regularly spaced cavities in the electron source contain wire filaments which are energized to emit electrons. The electrons are accelerated through the region of the ion beam and impact an inwardly facing wall of the cylindrical electron support. This causes low-energy electron emissions which neutralize the ion beam. Performance of the beam neutralizer is enhanced by injecting an ionizable gas into the region between the electron emitting surface and the ion beam.

80. 发明授权

US5023458A Ion beam control system 失效
标题翻译：离子束控制系统
公开(公告)号：US5023458A
公开(公告)日：1991-06-11
申请号：US487158
申请日：1990-03-01
申请人： Victor M. Benveniste , Edward K. McIntyre, Jr.
发明人： Victor M. Benveniste , Edward K. McIntyre, Jr.
IPC分类号： C23C14/48 , H01J27/02 , H01J37/08 , H01J37/317 , H01L21/265
CPC分类号： H01J37/08 , H01J37/3172
摘要： An ion implantation source used in an ion implantation system. The source produces multiple beam portions which combine to form a large diameter beam of the size of a workpiece. By controlling beam neutralization of the individual beam portions the ion density as a function of position within the cross-section of the beam can be controlled.
摘要翻译：用于离子注入系统的离子注入源。源产生多个光束部分，其结合以形成工件尺寸的大直径光束。通过控制单个光束部分的光束中和，可以控制作为光束横截面内的位置的函数的离子密度。

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