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71. 发明申请

US20080170842A1 TEMPERATURE MEASUREMENT AND CONTROL OF WAFER SUPPORT IN THERMAL PROCESSING CHAMBER 有权
标题翻译：温度测量和控制热处理室中的支撑
公开(公告)号：US20080170842A1
公开(公告)日：2008-07-17
申请号：US11623238
申请日：2007-01-15
申请人： AARON MUIR HUNTER , Bruce E. Adams , Mehran Behdjat , Rajesh S. Ramanujam , Joseph M. Ranish
发明人： AARON MUIR HUNTER , Bruce E. Adams , Mehran Behdjat , Rajesh S. Ramanujam , Joseph M. Ranish
IPC分类号： A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译：本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。

72. 发明授权

US09905443B2 Reflective deposition rings and substrate processing chambers incorporating same 有权
公开(公告)号：US09905443B2
公开(公告)日：2018-02-27
申请号：US13598828
申请日：2012-08-30
申请人： Anantha K. Subramani , Joseph M. Ranish , Xiaoxiong Yuan , Ashish Goel , Joung Joo Lee
发明人： Anantha K. Subramani , Joseph M. Ranish , Xiaoxiong Yuan , Ashish Goel , Joung Joo Lee
IPC分类号： C23C14/54 , C23C16/48 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67115 , C23C14/541 , C23C16/481 , H01L21/67248 , H01L21/68735 , H01L21/68742
摘要： Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.

73. 发明授权

US09640412B2 Apparatus and method for enhancing the cool down of radiatively heated substrates 有权
公开(公告)号：US09640412B2
公开(公告)日：2017-05-02
申请号：US12622736
申请日：2009-11-20
申请人： Wolfgang Aderhold , Joseph M. Ranish , Blake R. Koelmel
发明人： Wolfgang Aderhold , Joseph M. Ranish , Blake R. Koelmel
IPC分类号： A21B2/00 , H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67109 , H01L21/67115
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a dynamic heat sink that is substantially transparent to light from a radiant heat source, the dynamic heat sink being positioned near the substrate so the two are coupled. Additional embodiments of the invention are directed to methods of processing a substrate using the apparatuses described.

74. 发明授权

US08772055B1 Multizone control of lamps in a conical lamphead using pyrometers 有权
标题翻译：使用高温计对锥形灯头中的灯进行多区域控制
公开(公告)号：US08772055B1
公开(公告)日：2014-07-08
申请号：US13796169
申请日：2013-03-12
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/00 , B05C11/00 , H05B6/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

75. 发明申请

US20140073145A1 PULSE TRAIN ANNEALING METHOD AND APPARATUS 审中-公开
标题翻译：脉冲火焰退火方法和装置
公开(公告)号：US20140073145A1
公开(公告)日：2014-03-13
申请号：US13774741
申请日：2013-02-22
申请人： Stephen Moffatt , Joseph M. Ranish
发明人： Stephen Moffatt , Joseph M. Ranish
IPC分类号： H01L21/324 , H01L21/67 , B23K26/00 , H01L21/268
CPC分类号： H01L21/324 , B23K26/0626 , B23K26/352 , B23K2101/40 , H01L21/02667 , H01L21/26506 , H01L21/2658 , H01L21/268 , H01L21/2686 , H01L21/67115 , H01L29/66575
摘要： The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.
摘要翻译：本发明总体上描述了用于对衬底的期望区域进行退火处理的设备和方法。在一个实施例中，使用闪光灯或激光装置将电磁能量的脉冲传送到基板。脉冲可以是约1nsec至约10msec长，并且每个脉冲具有比熔化基底材料所需的能量更少的能量。脉冲之间的间隔通常足够长以允许由每个脉冲施加的能量完全消散。因此，每个脉冲完成微退火循环。脉冲可以一次被输送到整个基板，或者一次被传送到基板的一部分。另外的实施例提供了用于为辐射组件供电的装置，以及用于检测脉冲在衬底上的影响的装置。

76. 发明授权

US08387557B2 Method for forming silicon-containing materials during a photoexcitation deposition process 有权
标题翻译：在光激发沉积过程中形成含硅材料的方法
公开(公告)号：US08387557B2
公开(公告)日：2013-03-05
申请号：US12578290
申请日：2009-10-13
申请人： Kaushal K. Singh , Joseph M. Ranish
发明人： Kaushal K. Singh , Joseph M. Ranish
IPC分类号： C23C16/00
CPC分类号： C23C16/308 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , C30B25/02 , C30B29/06 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02277 , H01L21/02301 , H01L21/0231 , H01L21/02348 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/3121 , H01L21/3143 , H01L21/31612 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
摘要翻译：本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜或层的方法。膜沉积在基底上，通常包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。光致激化过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

77. 发明申请

US20120276660A1 SYSTEM FOR NON RADIAL TEMPERATURE CONTROL FOR ROTATING SUBSTRATES 有权
标题翻译：用于旋转基板的非径向温度控制系统
公开(公告)号：US20120276660A1
公开(公告)日：2012-11-01
申请号：US13548858
申请日：2012-07-13
申请人： Wolfgang R. Aderhold , Aaron Hunter , Joseph M. Ranish
发明人： Wolfgang R. Aderhold , Aaron Hunter , Joseph M. Ranish
IPC分类号： H01L21/66
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译：本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。

78. 发明授权

US08294068B2 Rapid thermal processing lamphead with improved cooling 有权
标题翻译：快速热处理灯头具有改进的冷却
公开(公告)号：US08294068B2
公开(公告)日：2012-10-23
申请号：US12207711
申请日：2008-09-10
申请人： Joseph M. Ranish , Khurshed Sorabji , Kedarnath Sangam , Alexander Lerner
发明人： Joseph M. Ranish , Khurshed Sorabji , Kedarnath Sangam , Alexander Lerner
IPC分类号： A21B1/22 , F26B19/00
CPC分类号： F27B17/0025 , F27D5/0037 , F27D21/0014 , H01L21/67109 , H01L21/67115
摘要： Embodiments of a lamphead and apparatus utilizing same are provided herein. In some embodiments, a lamphead for use in thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage. In some embodiments, the lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.
摘要翻译：本发明提供了一种灯头及其使用装置的实施例。在一些实施例中，用于热处理的灯头可以包括具有多个冷却剂通道和多个灯通道和反射器腔的整体构件，其中每个灯通道被配置成容纳灯，并且每个反射器空腔成形为能够起作用作为反射器或接收用于灯的可更换反射器，并且其中所述多个冷却剂通道设置成靠近所述多个灯通道; 以及至少一个传热构件，其从所述整体构件延伸到每个冷却剂通道中。在一些实施例中，灯头可以设置在包括具有基板支撑件的处理室的设备中，其中灯头被定位成向基板支撑件提供能量。

79. 发明授权

US07906402B2 Compensation techniques for substrate heating processes 有权
标题翻译：基板加热工艺的补偿技术
公开(公告)号：US07906402B2
公开(公告)日：2011-03-15
申请号：US12573139
申请日：2009-10-04
申请人： Joseph M. Ranish , Bruce E. Adams
发明人： Joseph M. Ranish , Bruce E. Adams
IPC分类号： H01L21/336 , H01L21/331 , H01L21/00
CPC分类号： C23C16/46 , C21D1/34
摘要： Methods for compensating for a thermal profile in a substrate heating process are provided herein. In some embodiments, a method of processing a substrate includes determining an initial thermal profile of a substrate that would result from subjecting the substrate to a process; determining a compensatory thermal profile based upon the initial thermal profile and a desired thermal profile; imposing the compensatory thermal profile on the substrate prior to performing the process on the substrate; and performing the process to create the desired thermal profile on the substrate. The initial substrate thermal profile can also be compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. Heat provided by an edge ring to the substrate may be controlled prior to or during the substrate heating process.
摘要翻译：本文提供了补偿基板加热过程中的热分布的方法。在一些实施例中，处理衬底的方法包括确定由衬底经受过程而导致的衬底的初始热分布; 基于初始热分布和期望的热分布确定补偿热分布; 在对衬底进行处理之前在衬底上施加补偿热分布; 并执行该过程以在衬底上产生所需的热分布。也可以通过调整在每单位面积加热的局部质量，每单位面积的局部热容量，或者在执行该过程之前靠近该衬底的部件的吸收性或反射率来补偿初始衬底热分布。由边缘环向衬底提供的热量可以在衬底加热过程之前或期间被控制。

80. 发明授权

US07651955B2 Method for forming silicon-containing materials during a photoexcitation deposition process 有权
公开(公告)号：US07651955B2
公开(公告)日：2010-01-26
申请号：US11425346
申请日：2006-06-20
申请人： Joseph M. Ranish , Kaushal K. Singh
发明人： Joseph M. Ranish , Kaushal K. Singh
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/308 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , C30B25/02 , C30B29/06 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02277 , H01L21/02301 , H01L21/0231 , H01L21/02348 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/3121 , H01L21/3143 , H01L21/31612 , H01L21/3185 , Y10S438/905
摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

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