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71. 发明授权

US6037265A Etchant gas and a method for etching transistor gates 失效
标题翻译：蚀刻气体和蚀刻晶体管栅极的方法
公开(公告)号：US6037265A
公开(公告)日：2000-03-14
申请号：US22772
申请日：1998-02-12
申请人： David Mui , Ajay Kumar , Jeffrey Chinn
发明人： David Mui , Ajay Kumar , Jeffrey Chinn
IPC分类号： C09K13/00 , H01L21/3065
CPC分类号： C09K13/00 , H01L21/32137 , H01L21/28123 , H01L21/823437
摘要： A method for producing a semiconductor device from a silicon substrate supporting a patterned hardmask layer, a tungsten silicide layer, a polysilicon layer, and a gate oxide layer. The method comprises etching the tungsten silicide layer and the polysilicon layer with an etchant gas comprising carbon monoxide (CO) and chlorine (Cl.sub.2). The etchant gas may also include hydrogen bromide (HBr) or a nitrogen-containing gas (e.g., N.sub.2).
摘要翻译：一种用于从支撑图案化硬掩模层，硅化钨层，多晶硅层和栅极氧化物层的硅衬底制造半导体器件的方法。该方法包括用包含一氧化碳（CO）和氯（Cl2）的蚀刻剂气体蚀刻硅化钨层和多晶硅层。蚀刻剂气体还可以包括溴化氢（HBr）或含氮气体（例如N 2）。

72. 发明授权

US5987276A Charging device having a shield with integral electrical connector 失效
标题翻译：充电装置具有带整体电连接器的屏蔽
公开(公告)号：US5987276A
公开(公告)日：1999-11-16
申请号：US971015
申请日：1997-11-14
申请人： Ajay Kumar , Dhirendra C. Damji , Daniel A. Chiesa , Jerry W. Bryant
发明人： Ajay Kumar , Dhirendra C. Damji , Daniel A. Chiesa , Jerry W. Bryant
IPC分类号： G03G15/02 , G03G21/18 , G03G15/00
CPC分类号： G03G15/0291
摘要： A charging apparatus for applying a uniform electrostatic charge to a charge retentive surface is provided. The charging apparatus is operably electrically connectable to a power supply for supplying an electrical bias to the charging apparatus. The apparatus includes a housing and an electrode mounted to the housing and positioned adjacent the surface in a non-contact relationship therewith. The apparatus also includes a shield connected to the housing and at least partially surrounding the electrode. The apparatus also includes an electrical connector, electrically connected to the shield and electrically connectable to the power supply for providing an electrical bias to the shield. The electrical connector extends from the shield and is integral therewith.
摘要翻译：提供了一种用于将均匀静电电荷施加到电荷保持表面的充电装置。充电装置可操作地电连接到用于向充电装置提供电偏压的电源。该装置包括壳体和安装到壳体并且以与其接触的非接触关系定位在其附近的电极。该装置还包括连接到壳体并且至少部分地围绕电极的屏蔽。该装置还包括电连接器，电连接到屏蔽并且电连接到电源以向屏蔽提供电偏置。电连接器从屏蔽件延伸并与其成一体。

73. 发明授权

US5937241A Positive gear mount for motion quality 失效
标题翻译：正齿轮安装用于运动质量
公开(公告)号：US5937241A
公开(公告)日：1999-08-10
申请号：US49188
申请日：1998-03-27
申请人： Ajay Kumar , Dhirendra C. Damji
发明人： Ajay Kumar , Dhirendra C. Damji
IPC分类号： F16D1/08 , G03G15/00 , G03G21/18 , G03G21/16
CPC分类号： G03G21/1857 , F16D1/0858 , G03G15/757 , G03G21/105 , G03G21/1647 , G03G2221/1657
摘要： A drive member for use in a printing machine is provided. The drive member cooperates with a drive shaft including a drive shaft feature. The drive shaft is adapted to transfer torque therebetween. The drive member cooperates with a torque transferring component to transfer torque therebetween. The drive member includes a body. The body defines an aperture therein. The body defines an axis of rotation thereof. The drive member further includes a torque transferring feature associated with the body for transferring torque between the body and the torque transferring component and a torque transmitting feature extending from the body in the direction of the axis, at least a portion of the torque transmitting feature having an arcuate periphery.
摘要翻译：提供了一种用于印刷机的驱动件。驱动构件与包括驱动轴特征的驱动轴配合。驱动轴适于在其间传递扭矩。驱动部件与扭矩传递部件配合以在其间传递扭矩。驱动构件包括主体。身体在其中限定孔。主体限定其旋转轴。驱动构件还包括与主体相关联的转矩传递特征，用于在主体和转矩传递部件之间传递转矩，以及扭矩传递特征，其从主体沿轴线方向延伸，转矩传递部件的至少一部分具有弧形周边。

74. 发明授权

US5851926A Method for etching transistor gates using a hardmask 失效
标题翻译：使用硬掩模蚀刻晶体管栅极的方法
公开(公告)号：US5851926A
公开(公告)日：1998-12-22
申请号：US724383
申请日：1996-10-01
申请人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Rolf Adolf Guenther , Bruce Minaee , Mark Wiltse
发明人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Rolf Adolf Guenther , Bruce Minaee , Mark Wiltse
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L29/78
CPC分类号： H01L21/32135
摘要： An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.
摘要翻译：三氟化氮和氯的蚀刻剂组合物，优选还包括钝化材料如溴化氢，蚀刻钨硅化物 - 多晶硅栅极层，其具有对薄的底层氧化硅栅极氧化物层的高选择性，以形成具有低微载荷的直壁，垂直剖面，优秀的档案控制。

75. 发明授权

US5832345A Process cartridge having a drive assembly resultant force counter acting member 失效
标题翻译：处理盒具有驱动组件合力反作用构件
公开(公告)号：US5832345A
公开(公告)日：1998-11-03
申请号：US970324
申请日：1997-11-14
申请人： Dhirendra C. Damji , Ajay Kumar
发明人： Dhirendra C. Damji , Ajay Kumar
IPC分类号： G03G21/18 , G03G15/00 , G03G21/16
CPC分类号： G03G21/1821 , G03G21/1647 , G03G21/1864 , G03G2221/1657
摘要： An electrostatographic process cartridge detachably mountable into a cavity defined by mated modules forming parts of an electrostatographic reproduction machine. The process cartridge includes an elongate plastic housing having a first side and a second side, as well as an inner surface defining a process chamber. It also includes a rotatable photoreceptive member mounted within the process chamber and to the housing and having an image bearing surface for holding a formed toner image; a rotatable developer member mounted to the housing, and forming a critical development gap with the photoreceptive member within the process chamber for enabling jumping toner image development on the image bearing surface; a drive assembly mounted at the second side of the housing for coupling to the photoreceptive member; and a gear train mounted at the second side of the housing, and coupled to the drive assembly and the developer member for transmitting drive to the developer member. The gear-train as mounted including a developer member gear, and having a resultant drive force pushing the developer member gear away from the photoreceptive member, thus tending to widen the critical development gap. Importantly, the process cartridge includes a resultant force counter-acting member mounted to the second side of the housing for absorbing the drive resultant force. The resultant force counter-acting member includes a wall and a retaining aperture for precisely retaining the developer member in a predetermined aligned position so as to maintain the critical development gap, and thereby ensure uniform quality toner image development.
摘要翻译：一种静电放置处理盒，其可拆卸地安装到由形成静电复原机的部件的配合模块限定的空腔中。处理盒包括具有第一侧面和第二侧面的细长塑料外壳以及限定处理室的内表面。它还包括可旋转的感光元件，其安装在处理室内和壳体之间并具有用于保持形成的调色剂图像的图像承载表面; 安装到壳体的可旋转的显影剂构件，并且与处理室内的感光元件形成关键的显影间隙，以使得能够在图像承载表面上跳跃调色剂图像显影; 安装在所述壳体的第二侧的驱动组件，用于联接到所述感光元件; 以及安装在所述壳体的第二侧的齿轮系，并且联接到所述驱动组件和所述显影剂构件，用于将驱动器传送到所述显影剂构件。安装的齿轮系包括显影剂构件齿轮，并且具有将显影剂构件推离感光构件的合力驱动力，因此倾向于扩大临界显影间隙。重要的是，处理盒包括安装在壳体的第二侧以吸收驱动合力的合力反作用件。合力反作用构件包括壁和保持孔，用于将显影剂构件精确地保持在预定的对准位置，以便保持临界显影间隙，从而确保调色剂图像显影均匀。

76. 发明申请

US20170256500A1 HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 有权
公开(公告)号：US20170256500A1
公开(公告)日：2017-09-07
申请号：US15060224
申请日：2016-03-03
申请人： Jungrae Park , Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
IPC分类号： H01L23/544 , B23K10/00 , B23K26/0622 , H01L21/78
CPC分类号： H01L23/544 , A47G19/22 , A47G19/2272 , B23K10/003 , B23K26/0624 , B65D47/244 , B65D47/32 , H01L21/78 , H01L2223/5446
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

77. 发明授权

US09443765B2 Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing 有权
公开(公告)号：US09443765B2
公开(公告)日：2016-09-13
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/82 , H01L21/67 , H01L21/306 , H01L21/56 , H01L21/683 , H01L23/00
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.

78. 发明申请

US20160197015A1 HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 审中-公开
标题翻译：使用基于多边形扫描的激光扫描过程和等离子体蚀刻过程的混合波形绘制方法
公开(公告)号：US20160197015A1
公开(公告)日：2016-07-07
申请号：US14589600
申请日：2015-01-05
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/268 , H01L21/308
CPC分类号： H01L21/78 , H01L21/0275 , H01L21/3086 , H01L21/67092 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a polygon scanning-based laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护多个集成电路的层构成。然后通过基于多边形扫描的激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露多个集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对多个集成电路进行分割。

79. 发明授权

US09287093B2 Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (ICP) reactor 有权
标题翻译：用于电感耦合等离子体（ICP）反应器的动态离子基团筛和离子基团孔
公开(公告)号：US09287093B2
公开(公告)日：2016-03-15
申请号：US13455342
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32633 , H01J2237/334
摘要： Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
摘要翻译：本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

80. 发明授权

US09224650B2 Wafer dicing from wafer backside and front side 有权
标题翻译：从晶片背面和正面进行晶片切割
公开(公告)号：US09224650B2
公开(公告)日：2015-12-29
申请号：US14103534
申请日：2013-12-11
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/46 , H01L21/30 , H01L21/78 , H01L21/308 , B23K26/32 , B23K26/36 , B23K26/40 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/78 , B23K26/32 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/08 , B23K2103/172 , B23K2103/42 , B23K2103/50 , B23K2103/56 , H01L21/3081 , H01L21/31127 , H01L21/3213 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2223/54433 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
摘要翻译：描述了用于背面激光划片加正面激光划线和等离子体蚀刻切割晶片或衬底的方法。例如，在其前侧划分具有多个集成电路的半导体晶片的方法，其背面上的金属化包括用第一激光划线工艺在背面上图案化金属化，以在第一激光划线工艺上提供第一多个激光划线背面。该方法还涉及在前侧形成掩模。该方法还包括利用第二激光划线工艺从正面图案化掩模，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化掩模，其中第二多个划线是与第一组多个划线对准。该方法还包括通过第二多个划线对等离子体蚀刻半导体晶片以对集成电路进行分离。

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