专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120305184A1 DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR 有权
标题翻译：用于感应耦合等离子体（ICP）反应器的动态离子辐射和离子射孔
公开(公告)号：US20120305184A1
公开(公告)日：2012-12-06
申请号：US13455342
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32633 , H01J2237/334
摘要： Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
摘要翻译：本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

2. 发明授权

US09287093B2 Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (ICP) reactor 有权
标题翻译：用于电感耦合等离子体（ICP）反应器的动态离子基团筛和离子基团孔
公开(公告)号：US09287093B2
公开(公告)日：2016-03-15
申请号：US13455342
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32633 , H01J2237/334
摘要： Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
摘要翻译：本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

3. 发明申请

US20120305185A1 APPARATUS AND METHODS FOR DRY ETCH WITH EDGE, SIDE AND BACK PROTECTION 审中-公开
标题翻译：具有边缘，侧面和背面保护的干燥蚀刻的装置和方法
公开(公告)号：US20120305185A1
公开(公告)日：2012-12-06
申请号：US13455347
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
IPC分类号： B05C9/00 , B05C11/02
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32477 , H01J37/32623 , H01J37/32642 , H01J37/32651
摘要： Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.
摘要翻译：本发明的实施例一般涉及用于等离子体蚀刻基板的方法和装置，更具体地说，涉及一种对被处理的基板的边缘，侧面和背面进行保护的方法和装置。本发明的实施例提供了一种边缘保护板，该边缘保护板的尺寸小于被加工的基板，其中边缘保护板可以位于等离子体室中靠近基板的位置。边缘保护板与基板上的边缘和/或侧面重叠以对基板的边缘，侧面和背面上的反射涂层提供保护。

4. 发明授权

US10170277B2 Apparatus and methods for dry etch with edge, side and back protection 有权
公开(公告)号：US10170277B2
公开(公告)日：2019-01-01
申请号：US13455347
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
IPC分类号： C23C16/00 , H01J37/32
摘要： Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式