专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06364049B1 Electric powering steering apparatus 失效
标题翻译：电动转向装置
公开(公告)号：US06364049B1
公开(公告)日：2002-04-02
申请号：US09670524
申请日：2000-09-26
申请人： Akira Iwasaki , Takayuki Hashimoto , Masanobu Miyazaki , Shinichi Tokura
发明人： Akira Iwasaki , Takayuki Hashimoto , Masanobu Miyazaki , Shinichi Tokura
IPC分类号： B62D504
CPC分类号： B62D5/0409 , F16C19/06 , F16C23/08 , F16C25/08 , F16C33/44 , F16C2326/24 , F16H55/24 , F16H57/021 , F16H2057/0213 , F16H2057/0221
摘要： In an electric power steering apparatus, a bearing of a drive shaft provided with a worm gear is connected to the drive shaft in an axial direction. It installs an elastic body (a holding device) which elastically deforms so as to move the drive shaft in an axial direction at a time of load input when tooth faces of the worm gear and the worm wheel are brought into contact with each other.
摘要翻译：在电动助力转向装置中，设置有蜗轮的驱动轴的轴承沿轴向连接到驱动轴。它安装弹性体（保持装置），该弹性体（保持装置）在蜗轮和蜗轮的齿面相互接触的同时在负载输入时沿轴向方向弹性变形。

72. 发明授权

US6006064A Original cover closer 有权
标题翻译：原封闭
公开(公告)号：US6006064A
公开(公告)日：1999-12-21
申请号：US157488
申请日：1998-09-21
申请人： Takayuki Hashimoto
发明人： Takayuki Hashimoto
IPC分类号： G03B27/62 , G03G15/00
CPC分类号： G03G15/605
摘要： In an original cover closer adapted to support an original cover used on a copying machine and on which an automatic document feeder is provided, including two types of original cover closers different in construction from each other.
摘要翻译：在适合于支撑在复印机上使用的原始盖子的原始盖子中，并且在其上设置有自动送纸器，包括彼此不同的两种类型的原始封盖器。

73. 发明授权

US5484377A Carton blank erector and feeder 失效
标题翻译：纸箱坯料和进料器
公开(公告)号：US5484377A
公开(公告)日：1996-01-16
申请号：US171470
申请日：1993-12-22
申请人： Michio Ueda , Seizo Kawamura , Toshio Kanematsu , Masamitsu Mihara , Takayuki Hashimoto
发明人： Michio Ueda , Seizo Kawamura , Toshio Kanematsu , Masamitsu Mihara , Takayuki Hashimoto
IPC分类号： B31B50/76 , B65B43/18 , B65B43/26 , B65B43/28 , B31B3/80 , B31B5/78
CPC分类号： B65B43/285
摘要： A carton blank erector and feeder comprising a magazine having a delivery opening at one end and accommodating flat blanks as arranged closely side by side from the end toward the other end thereof, the delivery opening being so positioned as to be opposed to a phantom outward extension of a bottom forming mandrel as stopped at a feed station, transport means for withdrawing the blank from the delivery opening and transporting the blank to the outward extension, and means for unfolding the blank from the flat form to a tubular form of square cross section while the blank is being transported by the transport means. The unfolding means has at least two unfolding claws provided at edge portions of the opening so as to be engageable respectively with opposite ends of the blank to be withdrawn from the opening, and at least two unfolding ensuring claws arranged at an intermediate portion of the path of transport of the blank so as to be engageable with the respective blank ends after the blank ends are released from the unfolding claws.
摘要翻译：一种纸箱坯架和进料器，其包括一个具有一端的输送口的容器，并且容纳平坦的坯料，其端部朝向另一端紧密并排设置，所述排出口被定位成与幻影向外延伸位于进料站处的底部形成心轴的输送装置，用于从坯料从输送口取出并将坯料运送到向外延伸部的输送装置，以及用于将坯料从扁平形状展开为管状的正方形横截面的装置，同时空白由运输工具运输。展开装置具有设置在开口的边缘部分处的至少两个展开爪，以便分别与坯料的相对端接合以从开口中取出，并且至少两个展开确定爪布置在路径的中间部分在坯料从展开爪释放之后，坯料的运送可以与各个坯料端部接合。

74. 发明授权

US09082213B2 Image processing apparatus for combining real object and virtual object and processing method therefor 有权
标题翻译：用于组合真实对象和虚拟对象的图像处理装置及其处理方法
公开(公告)号：US09082213B2
公开(公告)日：2015-07-14
申请号：US12265546
申请日：2008-11-05
申请人： Masakazu Fujiki , Kaname Tomite , Yasuo Katano , Takayuki Hashimoto
发明人： Masakazu Fujiki , Kaname Tomite , Yasuo Katano , Takayuki Hashimoto
IPC分类号： G06T7/00 , G06T19/00 , G06T15/06
CPC分类号： G06T19/006 , G06T15/06
摘要： When an image in a virtual space in which a virtual object is arranged is generated using a ray tracing method, and when it is determined that a ray which is generated in accordance with the ray tracing method successively intersected an approximate virtual object such as a hand which is a real object at lest twice, an image corresponding to a first intersection is generated in accordance with the ray emitted to the first intersection.
摘要翻译：当使用光线跟踪方法生成虚拟对象的虚拟空间中的图像时，并且当确定根据光线跟踪方法生成的射线相继地与诸如手的近似虚拟对象相交根据发射到第一交叉点的射线，生成与第一交点相对应的图像，其为实际对象两次，

75. 发明申请

US20120287097A1 SEMICONDUCTOR DEVICE, LED DRIVING CIRCUIT, AND APPARATUS FOR DISPLAYING AN IMAGE 有权
标题翻译：半导体器件，LED驱动电路和用于显示图像的装置
公开(公告)号：US20120287097A1
公开(公告)日：2012-11-15
申请号：US13560613
申请日：2012-07-27
申请人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA , Hideo ISHII
发明人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA , Hideo ISHII
IPC分类号： G06F3/038 , H05B37/02
CPC分类号： H01L29/7813 , G09G3/342 , G09G2320/064 , H01L29/0615 , H01L29/0619 , H01L29/41766 , H01L29/7803 , H01L29/7811 , H01L29/7815 , H05B33/0818 , H05B33/0827 , H05B33/089 , Y02B20/347
摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.
摘要翻译：半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成，在每个串中流动的电流（恒流驱动）。使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

76. 发明申请

US20120273893A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME 有权
公开(公告)号：US20120273893A1
公开(公告)日：2012-11-01
申请号：US13548265
申请日：2012-07-13
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H01L27/088
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

77. 发明申请

US20120014155A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME 失效
标题翻译：半导体器件和使用该器件的电源器件
公开(公告)号：US20120014155A1
公开(公告)日：2012-01-19
申请号：US13243642
申请日：2011-09-23
申请人： Takayuki HASHIMOTO , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki HASHIMOTO , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H02M1/00
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

78. 发明申请

US20110241644A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND POWER SUPPLY DEVICE 审中-公开
标题翻译：半导体器件及其制造方法和电源装置
公开(公告)号：US20110241644A1
公开(公告)日：2011-10-06
申请号：US13074138
申请日：2011-03-29
申请人： Takayuki HASHIMOTO , Masahiro MASUNAGA
发明人： Takayuki HASHIMOTO , Masahiro MASUNAGA
IPC分类号： G05F5/00 , H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0869 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H02M3/1588 , Y02B70/1466
摘要： Technology of reducing leakage current in a planar MOSFET and a hollow gate type planar MOSFET is provided. In a planar MOSFET (and hollow gate type planar MOSFET), regions close to a channel in n-type source regions have a shallow depth (shallow n-type source region), and regions away from the channel have a large depth (deep n-type source region). Protruding portions in a horizontal direction of p-type well regions are positioned further inside than a surface of a substrate. In this manner, a planar MOSFET (and a hollow gate type planar MOSFET) having small leakage current can be achieved, and thus there is an effect in loss reduction in a power source using the planar MOSFET (and the hollow gate type planar MOSFET).
摘要翻译：提供了减小平面MOSFET和中空栅型平面MOSFET中漏电流的技术。在平面MOSFET（和中空栅型平面MOSFET）中，靠近n型源区中的沟道的区域具有浅深度（浅n型源极区），并且远离沟道的区域具有较大的深度（深n 型源区）。在p型阱区域的水平方向上的突出部位比衬底的表面更靠内侧。以这种方式，可以实现具有小漏电流的平面MOSFET（和中空栅型平面型MOSFET），因此使用平面MOSFET（和中空栅型平面MOSFET）的电源的损耗降低具有效果，。

79. 发明授权

US07782098B2 Drive circuit and inverter for voltage driving type semiconductor device 有权
标题翻译：用于电压驱动型半导体器件的驱动电路和逆变器
公开(公告)号：US07782098B2
公开(公告)日：2010-08-24
申请号：US12170472
申请日：2008-07-10
申请人： Takayuki Hashimoto , Takashi Hirao , Masaki Shiraishi
发明人： Takayuki Hashimoto , Takashi Hirao , Masaki Shiraishi
IPC分类号： H03K3/00
CPC分类号： H02M3/07 , H02M1/08 , H02M7/5387 , H02M2003/071
摘要： A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.
摘要翻译：用于驱动半导体元件的驱动电路配备有：连接到直流电源的正侧的第一开关; 连接到第一开关的另一个端子和直流电源的负极的第二开关; 连接到直流电源的正极的第三开关; 连接到第三开关的另一个端子的第四开关; 连接到第四开关的另一个端子和直流电源的负极的第五开关; 以及电容器，连接到第一开关的另一端子和第四开关的另一端子。半导体元件的栅极连接到所述第三开关的另一个端子; 并且半导体元件的源极连接到直流电源的负极侧。

80. 发明授权

US07687885B2 Semiconductor device with reduced parasitic inductance 有权
标题翻译：降低寄生电感的半导体器件
公开(公告)号：US07687885B2
公开(公告)日：2010-03-30
申请号：US11809023
申请日：2007-05-30
申请人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
IPC分类号： H01L31/111 , G05F1/10 , H02J3/12 , H01L25/04 , H01L25/18 , G06F1/26 , H02M3/155
CPC分类号： H01L25/16 , G06F1/26 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/40 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.
摘要翻译：本发明提供一种降低电源单元的主电路的寄生电感的技术。在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是由n沟道垂直MOSFETS形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式