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71. 发明申请

US20100110765A1 Non-Volatile Memory Cell with Programmable Unipolar Switching Element 有权
标题翻译：具有可编程单极性开关元件的非易失性存储单元
公开(公告)号：US20100110765A1
公开(公告)日：2010-05-06
申请号：US12497964
申请日：2009-07-06
申请人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
发明人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
IPC分类号： G11C11/14 , G11C11/00 , G11C11/40
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76
摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
摘要翻译：公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程通过在相反的第二方向上的写入电流。开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

72. 发明申请

US20100102406A1 MAGNETIC STACK DESIGN 有权
标题翻译：磁性堆叠设计
公开(公告)号：US20100102406A1
公开(公告)日：2010-04-29
申请号：US12501632
申请日：2009-07-13
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： H01L29/82
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

73. 发明申请

US20100102308A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER 有权
标题翻译：具有氧化层的可编程电阻记忆体
公开(公告)号：US20100102308A1
公开(公告)日：2010-04-29
申请号：US12390711
申请日：2009-02-23
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L29/12 , H01L29/00 , H01L21/00
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译：可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

74. 发明申请

US20100084724A1 MEMORY CELL WITH STRESS-INDUCED ANISOTROPY 有权
标题翻译：具有应力诱导异物的记忆细胞
公开(公告)号：US20100084724A1
公开(公告)日：2010-04-08
申请号：US12418911
申请日：2009-04-06
申请人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Stricklin , Olle Gunnar Heinonen , Insik Jin
发明人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Stricklin , Olle Gunnar Heinonen , Insik Jin
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.
摘要翻译：具有应力诱导的磁各向异性的磁记忆元件。存储元件具有可切换的磁化方向可转换的铁磁自由层，具有钉扎磁化取向的铁磁参考层和它们之间的非磁性间隔层。自由层可以是圆形的，基本上是圆形的或近似圆形的。

75. 发明申请

US20100032778A1 MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
标题翻译：具有独立阅读和写入功能的磁记录
公开(公告)号：US20100032778A1
公开(公告)日：2010-02-11
申请号：US12326186
申请日：2008-12-02
申请人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
发明人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
IPC分类号： H01L43/02 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
摘要翻译：公开了具有分离的读和写路径的磁存储器。磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有自由磁化方向。第一磁化取向与第二磁化取向相反。隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。位线电耦合到第二端部。源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

76. 发明申请

US20100032636A1 NON-VOLATILE MEMORY CELL WITH ENHANCED FILAMENT FORMATION CHARACTERISTICS 有权
标题翻译：非易失性存储器，具有增强的光纤形成特性
公开(公告)号：US20100032636A1
公开(公告)日：2010-02-11
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

77. 发明申请

US20090315088A1 FERROELECTRIC MEMORY USING MULTIFERROICS 失效
标题翻译：使用多媒体的电磁记忆
公开(公告)号：US20090315088A1
公开(公告)日：2009-12-24
申请号：US12144697
申请日：2008-06-24
申请人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
发明人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
IPC分类号： H01L29/00
CPC分类号： G11C11/22 , H01F10/22 , H01F10/24 , H01L29/78391
摘要： Ferroelectric memory using multiferroics is described. The multiferrroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separated the data storage cell form the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.
摘要翻译：描述了使用多铁性的铁电存储器。多层存储器包括具有源极区，漏极区和分离源极区和漏极区的沟道区的衬底。电绝缘层与源极区，漏极区和沟道区相邻。具有复合多铁层的数据存储单元与电绝缘层相邻。电绝缘层从通道区域分离数据存储单元。控制栅电极与数据存储单元相邻。数据存储单元将控制栅电极的至少一部分与电绝缘层分离。

78. 发明申请

US20070211362A1 Readback system providing a combined sample output including multiple samples per bit 有权
标题翻译：回读系统提供组合样本输出，每位包含多个样本
公开(公告)号：US20070211362A1
公开(公告)日：2007-09-13
申请号：US11373742
申请日：2006-03-10
申请人： Shaoping Li , Insik Jin , Kaizhong Gao , Song Xue , Mike Montemorra , Housan Dakroub , Jason Jury
发明人： Shaoping Li , Insik Jin , Kaizhong Gao , Song Xue , Mike Montemorra , Housan Dakroub , Jason Jury
IPC分类号： G11B20/10
CPC分类号： G11B20/14 , G11B5/17 , G11B5/3906 , G11B20/10009 , G11B20/10037 , G11B20/10194 , G11B2005/0008 , G11B2220/2516
摘要： A readback system includes a magnetic sensor that receives a sensor current. The magnetic sensor senses magnetic bits at a bit frequency and generates a sensor output. The readback system includes a channel circuit that modulates the sensor current at a modulation frequency higher than the bit frequency. The channel circuit samples the sensor output and combines multiple samples of the sensor output per magnetic bit into a combined sample output.
摘要翻译：回读系统包括接收传感器电流的磁传感器。磁传感器以位频率感测磁位，并产生传感器输出。回读系统包括一个通道电路，该通道电路以高于位频率的调制频率调制传感器电流。通道电路对传感器输出进行采样，并将每个磁性位的传感器输出的多个样本合并成一个组合的采样输出。

79. 发明授权

US09664754B2 Single chip push-pull bridge-type magnetic field sensor 有权
公开(公告)号：US09664754B2
公开(公告)日：2017-05-30
申请号：US14009912
申请日：2012-04-01
申请人： Insik Jin , Xiaofeng Lei , James Geza Deak , Weifeng Shen , Songsheng Xue , Wei Li
发明人： Insik Jin , Xiaofeng Lei , James Geza Deak , Weifeng Shen , Songsheng Xue , Wei Li
IPC分类号： G01R33/02 , G01R33/09 , H01L27/22 , H01L43/08 , G01D5/14 , G07F1/00 , G06Q10/00
CPC分类号： G01R33/09 , G01D5/145 , G01R33/0005 , G01R33/0011 , G01R33/098 , G06Q10/00 , G06Q2220/00 , G07F1/00 , H01L27/22 , H01L43/08
摘要： The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements.

80. 发明授权

US09182457B2 Isolated voltage transducer 有权
标题翻译：隔离电压传感器
公开(公告)号：US09182457B2
公开(公告)日：2015-11-10
申请号：US13882111
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R31/02 , G01R15/14
CPC分类号： G01R33/09 , G01R15/148 , G01R15/205 , G01R31/025 , G01R33/0017 , G01R33/091 , G01R33/098
摘要： A transducer is disclosed for detecting the AC and DC voltage difference between two nodes in an electrical circuit and electronically transmitting the measured voltage difference to an electrical system that is electrically isolated from the common mode potential of the two nodes. The voltage drop between two points in a circuit under test is determined by detecting the current flowing through a resistive shunt coil connected in parallel to the test points. Current through the resistive shunt coil is linearly proportional to the voltage difference between the test points, and it is detected by using a magnetic sensor that is separated from the shunt coil by an insulating dielectric barrier. The transducer can be packaged in a standard integrated circuit package in order to provide a small and low cost voltage transducer for test, measurement, control, and signal-isolation applications.
摘要翻译：公开了一种用于检测电路中的两个节点之间的AC和DC电压差的换能器，并将所测量的电压差电传送到与两个节点的共模电位电隔离的电气系统。通过检测流过与测试点并联连接的电阻分流线圈的电流来确定被测电路中两点之间的电压降。通过电阻分流线圈的电流与测试点之间的电压差成线性比例，并且通过使用通过绝缘电介质阻挡层与分流线圈分离的磁传感器来检测电流。传感器可以封装在标准集成电路封装中，以便为测试，测量，控制和信号隔离应用提供一个小型和低成本的电压传感器。

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