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71. 发明授权

US06826216B2 Semiconductor laser and method of production thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US06826216B2
公开(公告)日：2004-11-30
申请号：US09934930
申请日：2001-08-22
申请人： Jugo Mitomo , Hironobu Narui
发明人： Jugo Mitomo , Hironobu Narui
IPC分类号： H01S500
CPC分类号： H01S5/164 , H01S5/0425 , H01S5/2238 , H01S5/3202
摘要： A window structure type AlGaInP semiconductor laser able to suppress abnormal growth in the vicinity of a ridge and having good surface morphology, wherein a least one step-like structure is provided on a substrate having a surface tilted to a [0-1-1] direction from a (100) plane, a semiconductor stack is formed on the substrate and comprises an active layer including two types of Group III elements including at least indium (In) and Group V elements including phosphorus (P), a cladding layer of a first conductivity, a cladding layer of a second conductivity, end surfaces of an active layer serve as end surfaces of a resonator, a light guide is formed between and the end surfaces of the resonator, and the light guide is arranged at an upper step side of the step-like structure so that a portion of the light guide not including resonator end surfaces is positioned in the vicinity of the step-like structure and so that the resonator end surface portions of the light guide are farther from the step-like structure, and a method of production thereof.
摘要翻译：一种窗口结构型AlGaInP半导体激光器，其能够抑制脊附近的异常生长并且具有良好的表面形态，其中在具有倾斜到[0-1-1]的表面的基板上提供至少一个阶梯状结构，（100）面的方向，在衬底上形成半导体堆叠，并且包括包括至少包括铟（In）的两种III族元素和包括磷（P）的第V族元素的有源层，第一导电率，第二导电率的包覆层，有源层的端面用作谐振器的端面，在谐振器的端面和端面之间形成导光体，并且光导布置在上台阶侧使得不包括谐振器端面的导光体的一部分位于阶梯状结构附近，使得光导的谐振器端面部分更远离阶梯状结构及其制造方法。

72. 发明授权

US06633054B2 Method of fabricating a semiconductor light-emitting device and the semiconductor light-emitting device 失效
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US06633054B2
公开(公告)日：2003-10-14
申请号：US09789560
申请日：2001-02-22
申请人： Shoji Hirata , Hironobu Narui
发明人： Shoji Hirata , Hironobu Narui
IPC分类号： H01L29221
CPC分类号： H01S5/164 , H01L33/0062 , H01S5/0207 , H01S5/1064 , H01S5/2081
摘要： A method of fabricating a semiconductor light-emitting device in which the window structure can readily be obtained without relying upon an advanced process technology. In the method of the present invention, a first multi-layered film formed on a substrate is patterned into a groove pattern having a widened portion and narrowed portions provided on both sides of such widened portion. A second multi-layered film is then epitaxially grown on the substrate so as to cover the groove pattern, by successively growing an n-type second lower clad layer, a second active layer, a p-type second upper clad layer and a p-type cap layer. The cap layer is then patterned to thereby form a current injection layer on the second multi-layered film within the groove pattern so as to be extended along the longitudinal direction of such groove pattern.
摘要翻译：一种制造半导体发光器件的方法，其中可以在不依赖于先进工艺技术的情况下容易地获得窗户结构。在本发明的方法中，将形成在基板上的第一多层膜图案化成具有加宽部分和设置在这种加宽部分的两侧上的变窄部分的凹槽图案。然后通过依次生长n型第二下包层，第二有源层，p型第二上覆层和p型第二上包覆层，在衬底上外延生长第二多层膜，以覆盖沟槽图案。盖帽层。然后对盖层进行图案化，从而在凹槽图案内的第二多层膜上形成电流注入层，以沿着这种凹槽图案的纵向方向延伸。

73. 发明授权

US06567445B1 Method to manufacture a heat emission apparatus in a semiconductor laser 有权
标题翻译：在半导体激光器中制造散热装置的方法
公开(公告)号：US06567445B1
公开(公告)日：2003-05-20
申请号：US09862559
申请日：2001-05-22
申请人： Hironobu Narui , Takehiro Taniguchi , Noriko Ueno , Nobukata Okano
发明人： Hironobu Narui , Takehiro Taniguchi , Noriko Ueno , Nobukata Okano
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/0425
摘要： A semiconductor emission element is disclosed including a plurality of the laser oscillator formed on the opposite side of a base of a substrate. P-side electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by increasing its thickness, are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.
摘要翻译：公开了一种半导体发射元件，其包括形成在基底的相对侧上的多个激光振荡器。 P侧电极连接到激光振荡器，而具有通过增加其厚度具有辐射功能的提取电极连接到p侧电极。提取电极覆盖两个激光振荡器，同时覆盖其中两个具有绝缘层的激光振荡器。结果，即使基板设置在基板上，基板的发光部分的相对面朝向基板，也可以抑制发热部分的发热性能的劣化，同时可以抑制热干扰。

74. 发明授权

US06468820B2 Process for fabricating semiconductor laser emitting apparatus 有权
公开(公告)号：US06468820B2
公开(公告)日：2002-10-22
申请号：US09794001
申请日：2001-02-28
申请人： Hironobu Narui
发明人： Hironobu Narui
IPC分类号： H01L2100
CPC分类号： H01S5/4031 , H01S5/4087
摘要： In the fabrication of a semiconductor laser emitting apparatus which emits laser beams having two different wavelengths, surface steps of the laminate film which is formed so as to cover the first semiconductor laser emitting device and constitutes the second semiconductor laser emitting device, is removed, so that processing with high precision is realized. A process for fabricating a semiconductor laser emitting apparatus comprising first and second semiconductor laser emitting devices, which are formed on a substrate and respectively emit laser beams having different wavelengths, the process comprising: stacking a ternary-system compound semiconductor on the substrate in a region in which the first semiconductor laser emitting device is to be formed, to thereby form a first laminate; forming a second laminate comprised of a quaternary-system compound semiconductor on the substrate so that the second laminate covers the first laminate; planarizing the surface of the second laminate so that the surface of the first laminate is exposed to the outside; forming current injection regions in the cladding layer; forming a current constriction region; and separating the first laminate from the second laminate, to thereby form a space between the laminates.

75. 发明授权

US06459714B1 Heat emission apparatus in a semiconductor laser 有权
标题翻译：半导体激光器中的散热装置
公开(公告)号：US06459714B1
公开(公告)日：2002-10-01
申请号：US09325451
申请日：1999-06-03
申请人： Hironobu Narui , Takehiro Taniguchi , Noriko Ueno , Nobukata Okano
发明人： Hironobu Narui , Takehiro Taniguchi , Noriko Ueno , Nobukata Okano
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/0425
摘要： It is an object to provide a semiconductor emission element which can promote radiation while being manufactured easily, and a method of manufacturing the same. In the semiconductor emission element of the invention, a plurality of the laser oscillator are formed on the opposite side of a base of a substrate which is supported by the base. P-sides electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by thickening its thickness are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.
摘要翻译：本发明的目的是提供一种能够容易地制造能够促进辐射的半导体发光元件及其制造方法。在本发明的半导体发光元件中，多个激光振荡器形成在由基座支撑的基板的基部的相反侧。 P侧电极连接到激光振荡器，而具有通过增厚其厚度具有辐射功能的提取电极连接到p侧电极。提取电极覆盖两个激光振荡器，同时覆盖其中两个具有绝缘层的激光振荡器。结果，即使基板设置在基板上，基板的发光部分的相对面朝向基板，也可以抑制发热部分的发热性能的劣化，同时可以抑制热干扰。

76. 发明授权

US06404790B1 Semiconductor laser and multi-semiconductor laser 失效
标题翻译：半导体激光器和多功能半导体激光器
公开(公告)号：US06404790B1
公开(公告)日：2002-06-11
申请号：US09397073
申请日：1999-09-16
申请人： Hironobu Narui , Takehiro Taniguchi , Noriko Ueno , Nobukata Okano
发明人： Hironobu Narui , Takehiro Taniguchi , Noriko Ueno , Nobukata Okano
IPC分类号： H01S500
CPC分类号： H01S5/227 , H01S5/106 , H01S5/1064 , H01S5/2275 , H01S2301/18
摘要： A stripe portion extending in an crystal axis direction of a compound semiconductor substrate (1) in which a {100} crystalline surface is made a major surface is formed between stepped portions (41), a laser resonator is formed in the stripe portion, the width of the stripe portion at one end surface of the laser resonator is made broader in width compared with the central portion and another end surface of the laser resonator. Then, in accordance with the shape of the stripe portion, the stripe shape of an active layer of the laser resonator is made broader in width than the center portion and the other end surface, whereby a semiconductor laser of a narrow field pattern with a low threshold value is obtained.
摘要翻译：在阶梯部分（41）之间形成有在{100}晶体表面形成主表面的化合物半导体衬底（1）的<011>晶轴方向上延伸的条纹部分，条形状与激光谐振器的中心部分和另一个端面相比，激光谐振器的一个端面处的条纹部分的宽度被宽化。然后，根据条形部分的形状，激光谐振器的有源层的条纹形状比中心部分和另一个端面宽，使得具有低的窄场图案的半导体激光器获得阈值。

77. 发明授权

US06310381B1 Photoelectric conversion element and method for manufacturing the same 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：US06310381B1
公开(公告)日：2001-10-30
申请号：US09306183
申请日：1999-05-06
申请人： Takehiro Taniguchi , Hironobu Narui , Noriko Ueno , Nobukata Okano
发明人： Takehiro Taniguchi , Hironobu Narui , Noriko Ueno , Nobukata Okano
IPC分类号： H01L310224
CPC分类号： H01L33/38 , H01L33/62 , H01L2924/0002 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2205 , H01S5/227 , H01S5/4031 , H01L2924/00
摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.
摘要翻译：本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。在相同的基板上形成多个半导体层和p侧电极层叠的激光振荡器。通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。每个接触电极与对应于每个开口的对准方向平行延伸。因此，各开口之间的空间和在对准方向上并排放置的每个接触电极之间的空间被加宽，并且消除了对高精度位置匹配的要求。因此，可以容易且准确地连接各p侧电极和各接触电极。

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