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1. 发明申请

US20110182313A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110182313A1
公开(公告)日：2011-07-28
申请号：US13085150
申请日：2011-04-12
申请人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
发明人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/1064 , H01S5/1085 , H01S5/2036 , H01S5/2054 , H01S5/2235 , H01S2301/18 , H01S2301/206
摘要： A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

2. 发明授权

US07510887B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07510887B2
公开(公告)日：2009-03-31
申请号：US11790532
申请日：2007-04-26
申请人： Tsunenori Asatsuma , Shoji Hirata
发明人： Tsunenori Asatsuma , Shoji Hirata
IPC分类号： H01L21/20
CPC分类号： H01S5/223 , H01S5/10 , H01S5/105 , H01S5/2036 , H01S5/2081
摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.
摘要翻译：该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

3. 发明申请

US20080176352A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20080176352A1
公开(公告)日：2008-07-24
申请号：US11790532
申请日：2007-04-26
申请人： Tsunenori Asatsuma , Shoji Hirata
发明人： Tsunenori Asatsuma , Shoji Hirata
IPC分类号： H01L21/02
CPC分类号： H01S5/223 , H01S5/10 , H01S5/105 , H01S5/2036 , H01S5/2081
摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.
摘要翻译：该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

4. 发明授权

US07248612B2 Semiconductor laser device with multi-dimensional-photonic-crystallized region 失效
标题翻译：具有多维 - 光子结晶区域的半导体激光器件
公开(公告)号：US07248612B2
公开(公告)日：2007-07-24
申请号：US10702604
申请日：2003-11-07
申请人： Tsunenori Asatsuma , Shoji Hirata
发明人： Tsunenori Asatsuma , Shoji Hirata
IPC分类号： H01S5/00
CPC分类号： H01S5/223 , H01S5/10 , H01S5/105 , H01S5/2036 , H01S5/2081
摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.
摘要翻译：该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

5. 发明授权

US06741625B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06741625B2
公开(公告)日：2004-05-25
申请号：US09986182
申请日：2001-11-07
申请人： Shoji Hirata
发明人： Shoji Hirata
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/042
摘要： The present invention provides a semiconductor laser including a plurality of light emission portions provided on the same substrate, each of which is adapted to emit laser beams with a multi-mode. A part of the plurality of light emission portions constitute a main light emission group, and the rest of the plurality of light emission portions constitute a sub-light emission group. A main electrode for supplying a current to the main light emission group and a sub-electrode for supplying a current to the sub-light emission group are separately provided. With this configuration, it is possible to keep the entire quality of laser beams of the semiconductor laser constant.
摘要翻译：本发明提供一种半导体激光器，其包括设置在同一基板上的多个发光部分，每个发光部分适于发射具有多模式的激光束。多个发光部的一部分构成主发光组，其余的发光部分构成副发光组。分别设置用于向主发光组提供电流的主电极和用于向次发光组提供电流的子电极。通过这种结构，可以保持半导体激光器的整个激光束的质量恒定。

6. 发明授权

US06414976B1 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US06414976B1
公开(公告)日：2002-07-02
申请号：US09350292
申请日：1999-07-09
申请人： Shoji Hirata
发明人： Shoji Hirata
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/223 , H01S5/2231 , H01S5/3421 , H01S2301/18
摘要： A semiconductor light emitting device capable of correcting astigmatism difference well and oscillating stably also at the time of a high output operation, wherein a waveguide stripe width at the center of a stripe portion is constant, an inter-ridge recessed portion width (ridge separation width) is set narrow at the center portion of the stripe portion (resonator center portion), and a ridge separation width near an end surface side is set broader than the ridge separation width at the center portion, whereby a waveguide mode of the stripe center portion is laterally spread and in addition the current can be held in the narrow region and, accordingly, a saturable absorbing region is formed in the lateral region inside an active layer, pulsation can be stably induced, and an effective refractive index difference An near the end surface is made large and an index guide-like waveguide can be obtained, whereby astigmatism difference can be reduced to close to zero.
摘要翻译：一种半导体发光器件，其能够在高输出操作时能够良好地校正散光差异并稳定地振荡，其中条形部分的中心处的波导条宽度恒定，脊间凹部的宽度（脊间隔宽度）在条状部分（谐振器中心部分）的中心部分设置得较窄，并且端面侧附近的脊分离宽度被设定为比中心部分处的脊分离宽度宽，由此条纹中心部分的波导模式横向扩展，另外电流可以保持在窄的区域内，因此在有源层内部的横向区域中形成可饱和的吸收区域，可以稳定地产生脉动，在端部附近有效的折射率差A 使表面变大，并且可以获得折射率导向波导，从而可以将像散差降低到接近于零。

7. 发明授权

US4318916A Antibiotic PS-5 and derivatives having .beta.-lactamase inhibitory activity and production thereof 失效
标题翻译：抗生素PS-5和具有β-内酰胺酶抑制活性的衍生物及其生产
公开(公告)号：US4318916A
公开(公告)日：1982-03-09
申请号：US882730
申请日：1978-03-02
申请人： Kazuhiko Okamura , Shoji Hirata , Yasushi Okumura , Yasuo Fukagawa , Yasutaka Shimauchi , Tomoyuki Ishikura , Kageaki Kouno , Joseph Lein
发明人： Kazuhiko Okamura , Shoji Hirata , Yasushi Okumura , Yasuo Fukagawa , Yasutaka Shimauchi , Tomoyuki Ishikura , Kageaki Kouno , Joseph Lein
IPC分类号： C07G11/00 , A61K35/74 , A61K38/55 , A61P31/04 , C07D477/20 , C12P1/06 , C12P17/10 , C12R1/465 , A61K31/40
CPC分类号： C07D477/20
摘要： A novel antibiotic substance and derivatives thereof, having strong antibiotic activity and .beta.-lactamase inhibiting effect and a method for producing the same by aerobic cultivation of Streptomyces A 271.
摘要翻译：一种具有强抗生素活性和β-内酰胺酶抑制作用的新型抗生素及其衍生物及其生产方法，通过有氧培养链霉菌A 271。

8. 发明授权

US08520712B2 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08520712B2
公开(公告)日：2013-08-27
申请号：US13085150
申请日：2011-04-12
申请人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
发明人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/1064 , H01S5/1085 , H01S5/2036 , H01S5/2054 , H01S5/2235 , H01S2301/18 , H01S2301/206
摘要： A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.
摘要翻译：实现NFP稳定且均匀形状的激光二极管。激光二极管在半导体衬底上包括有源层，限制被注入有源层的电流的一个或多个条状电流限制结构以及包括一个或多个条形凸起的堆叠结构部分沿电流限制结构的延伸方向延伸。

9. 发明授权

US07907651B2 Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US07907651B2
公开(公告)日：2011-03-15
申请号：US12379216
申请日：2009-02-17
申请人： Tsunenori Asatsuma , Yoshiro Takiguchi , Shoji Hirata
发明人： Tsunenori Asatsuma , Yoshiro Takiguchi , Shoji Hirata
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/1082 , H01S5/0286 , H01S5/1014 , H01S5/204 , H01S5/2063 , H01S5/2072 , H01S5/2214 , H01S5/2231
摘要： A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.
摘要翻译：提供能够有效地抑制反馈光的影响的激光二极管。激光二极管包括基板，以及包括第一导电半导体层，具有发光区域的有源层和在其表面上具有突出部分的第二导电半导体层的层叠结构，其中反馈光抑制部分设置在主发光侧端面上，并且反射光抑制部分抑制了发光区域的横向边界附近的反馈光的影响。

10. 发明授权

US07879628B2 Semiconductro laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07879628B2
公开(公告)日：2011-02-01
申请号：US12314348
申请日：2008-12-09
申请人： Tsunenori Asatsuma , Shoji Hirata
发明人： Tsunenori Asatsuma , Shoji Hirata
IPC分类号： H01L21/20
CPC分类号： H01S5/223 , H01S5/10 , H01S5/105 , H01S5/2036 , H01S5/2081
摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.
摘要翻译：该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

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