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1. 发明授权

US08520712B2 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08520712B2
公开(公告)日：2013-08-27
申请号：US13085150
申请日：2011-04-12
申请人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
发明人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/1064 , H01S5/1085 , H01S5/2036 , H01S5/2054 , H01S5/2235 , H01S2301/18 , H01S2301/206
摘要： A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.
摘要翻译：实现NFP稳定且均匀形状的激光二极管。激光二极管在半导体衬底上包括有源层，限制被注入有源层的电流的一个或多个条状电流限制结构以及包括一个或多个条形凸起的堆叠结构部分沿电流限制结构的延伸方向延伸。

2. 发明授权

US07907651B2 Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US07907651B2
公开(公告)日：2011-03-15
申请号：US12379216
申请日：2009-02-17
申请人： Tsunenori Asatsuma , Yoshiro Takiguchi , Shoji Hirata
发明人： Tsunenori Asatsuma , Yoshiro Takiguchi , Shoji Hirata
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/1082 , H01S5/0286 , H01S5/1014 , H01S5/204 , H01S5/2063 , H01S5/2072 , H01S5/2214 , H01S5/2231
摘要： A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.
摘要翻译：提供能够有效地抑制反馈光的影响的激光二极管。激光二极管包括基板，以及包括第一导电半导体层，具有发光区域的有源层和在其表面上具有突出部分的第二导电半导体层的层叠结构，其中反馈光抑制部分设置在主发光侧端面上，并且反射光抑制部分抑制了发光区域的横向边界附近的反馈光的影响。

3. 发明授权

US07879628B2 Semiconductro laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07879628B2
公开(公告)日：2011-02-01
申请号：US12314348
申请日：2008-12-09
申请人： Tsunenori Asatsuma , Shoji Hirata
发明人： Tsunenori Asatsuma , Shoji Hirata
IPC分类号： H01L21/20
CPC分类号： H01S5/223 , H01S5/10 , H01S5/105 , H01S5/2036 , H01S5/2081
摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.
摘要翻译：该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

4. 发明申请

US20090262432A1 LASER BEAM MULTIPLEXER 失效
标题翻译：激光束多路复用器
公开(公告)号：US20090262432A1
公开(公告)日：2009-10-22
申请号：US12423316
申请日：2009-04-14
申请人： Shoji Hirata
发明人： Shoji Hirata
IPC分类号： G02B27/10
CPC分类号： G02B6/4296 , G01J1/0422 , G01J1/0451 , G01J1/08 , H01S5/4012 , H01S5/4087
摘要： A laser beam multiplexer capable of easily multiplexing a plurality of laser beams is provided. A laser beam multiplexer includes a multiplexing element having a hollow portion with a sectional elliptical shape, in which the multiplexing element includes: a plurality of light-incident apertures guiding laser beams from outside toward one of two focal points of the hollow portion, a reflective layer arranged on a wall surface of the hollow portion, and multiplexing a plurality of incident laser beams while reflecting the plurality of laser beams, and a light-emitting aperture guiding laser beams multiplexed by the reflective layer toward outside.
摘要翻译：提供能够容易地复用多个激光束的激光束多路复用器。激光束多路复用器包括具有截面椭圆形状的中空部分的多路复用元件，其中多路复用元件包括：多个入射孔，其将来自外部的激光束引导到中空部分的两个焦点之一，反射层叠在中空部的壁面上，并且多个入射的激光束同时反射多个激光束;以及发光孔，将由反射层多路复用的激光束引向外部。

5. 发明申请

US20090137078A1 Semiconductro laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20090137078A1
公开(公告)日：2009-05-28
申请号：US12314348
申请日：2008-12-09
申请人： Tsunenori Asatsuma , Shoji Hirata
发明人： Tsunenori Asatsuma , Shoji Hirata
IPC分类号： H01L21/02
CPC分类号： H01S5/223 , H01S5/10 , H01S5/105 , H01S5/2036 , H01S5/2081
摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.
摘要翻译：该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。

6. 发明申请

US20060203868A1 Laser diode device 有权
标题翻译：激光二极管装置
公开(公告)号：US20060203868A1
公开(公告)日：2006-09-14
申请号：US11303128
申请日：2005-12-15
申请人： Shoji Hirata
发明人： Shoji Hirata
IPC分类号： H01S5/00
CPC分类号： H01S5/10 , H01S5/1039 , H01S5/32341
摘要： A laser diode device capable of obtaining high light efficiency and improving output by using an AlGaInN compound semiconductor as a material is provided. The laser diode device includes semiconductor layer which has an active layer and is made of a nitride Group III-V compound semiconductor containing at least one of aluminum (Al), gallium (Ga), and indium (In) among Group 3B elements and nitrogen (N) among Group 5B elements. The active layer has a strip-shaped light emitting region whose width W is from 5 μm to 30 μm, length L is from 300 μm to 800 μm, and output of laser light from the active layer is 200 mW or more.
摘要翻译：提供能够通过使用AlGaInN化合物半导体作为材料获得高光效率和改善输出的激光二极管器件。激光二极管器件包括半导体层，其具有有源层，并且由在3B族元素和氮中含有铝（Al），镓（Ga）和铟（In）中的至少一种的氮化物III-V族化合物半导体制成）（N）5B组元。有源层具有宽度W为5μm〜30μm的条状发光区域，长度L为300μm〜800μm，来自有源层的激光输出为200mW以上。

7. 发明授权

US06185239B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06185239B2
公开(公告)日：2001-02-06
申请号：US09010197
申请日：1998-01-21
申请人： Seiji Ijuin , Shoji Hirata , Atsushi Ogasawara
发明人： Seiji Ijuin , Shoji Hirata , Atsushi Ogasawara
IPC分类号： H01S319
CPC分类号： H01S5/0264 , H01S5/0287 , H01S5/10
摘要： A semiconductor laser device with reduced threshold current and power consumption. Reflectivity Rr at a rear face of an optical cavity of the laser is set as large as possible. A monitor photodiode used for controlling an output form the laser is provided on a mount at a position to detect the main laser beam emitted from the front face of the optical cavity.
摘要翻译：具有降低阈值电流和功耗的半导体激光器件。将激光器的光腔的后表面的反射率Rr尽可能大地设定。用于控制激光输出的监视器光电二极管被设置在检测从光腔前表面发射的主激光束的位置的安装座上。

8. 发明授权

US4807245A Distributed-feedback type semiconductor laser 失效
标题翻译：分布式反馈型半导体激光器
公开(公告)号：US4807245A
公开(公告)日：1989-02-21
申请号：US70215
申请日：1987-07-06
申请人： Shoji Hirata , Kazuo Honda
发明人： Shoji Hirata , Kazuo Honda
IPC分类号： H01S5/00 , H01S5/12 , H01S3/08
CPC分类号： H01S5/12
摘要： A distributed-feedback type semiconductor laser device having an active layer arranged between a pair of clad layers is provided with a stripe-shaped distributed-feedback mechanism, for example, having the configuration of a diffraction grating, and dummy regions of the same configuration as the distributed feedback mechanism arranged at opposite sides of the latter and being spaced from the distributor-feedback mechanism by relatively narrow plane regions, with the result that the distributed-feedback mechanism can be formed as a narrow stripe with good reproducibility so that it is possible to provide the semiconductor laser device with a long useful life and with the capability of operating in single longitudinal and transverse modes.

9. 发明授权

US4368203A Antibiotics and derivatives thereof having .beta.-lactamase inhibitory activity and production thereof 失效
标题翻译：具有β-内酰胺酶抑制活性的抗生素及其衍生物及其生产
公开(公告)号：US4368203A
公开(公告)日：1983-01-11
申请号：US949854
申请日：1978-10-10
申请人： Kazuhiko Okamura , Shoji Hirata , Yasushi Okumura , Yasuo Fukagawa , Yasutaka Shimauchi , Tomoyuki Ishikura , Kageaki Kouno , Joseph Lein
发明人： Kazuhiko Okamura , Shoji Hirata , Yasushi Okumura , Yasuo Fukagawa , Yasutaka Shimauchi , Tomoyuki Ishikura , Kageaki Kouno , Joseph Lein
IPC分类号： C12P1/06 , C07D477/20 , C12R1/465 , C07D487/04 , A61K31/40
CPC分类号： C07D477/20
摘要： A novel antibiotic substance of the formula ##STR1## wherein R.sub.1 is CH.sub.3 and R.sub.2 is --CH.sub.2 --CH.sub.2 -- or R.sub.1 is H and R.sub.2 is --CH.dbd.CH--; and R.sub.3 represents hydrogen, lower alkyl or triphenylmethyl,and including the salts of the compound of formula (I) wherein R.sub.3 is hydrogen, said antibiotic substance having strong antibiotic activity and .beta.-lactamase inhibiting effect, and a method for producing the same by aerobic cultivation of Streptomyces A271.
摘要翻译：式（Ⅰ）的新型抗生素物质，其中R 1为CH 3且R 2为-CH 2 -CH 2 - 或R 1为H且R 2为-CH = CH-; 并且R 3表示氢，低级烷基或三苯基甲基，并且包括其中R 3是氢的式（I）化合物的盐，所述抗生素具有很强的抗生素活性和β-内酰胺酶抑制作用的方法及其生产方法培养链霉菌A271。

10. 发明申请

US20110182313A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110182313A1
公开(公告)日：2011-07-28
申请号：US13085150
申请日：2011-04-12
申请人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
发明人： Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/1064 , H01S5/1085 , H01S5/2036 , H01S5/2054 , H01S5/2235 , H01S2301/18 , H01S2301/206
摘要： A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

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