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71. 发明申请

US20010032589A1 Film forming apparatus and method of forming a crystalline silicon film 审中-公开
标题翻译：成膜装置及形成结晶硅膜的方法
公开(公告)号：US20010032589A1
公开(公告)日：2001-10-25
申请号：US09822414
申请日：2001-04-02
申请人： Nissin Electric Co., Ltd.
发明人： Hiroya Kirimura , Kiyoshi Ogata
IPC分类号： C23C016/00
CPC分类号： C30B25/105 , C23C16/24 , C23C16/402 , C23C16/54 , C30B29/06
摘要： A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.
摘要翻译：成膜装置包括在基板上形成结晶硅膜的硅膜形成真空室; 为所述真空室提供的成膜装置，用于在所述基板的目标表面上形成所述结晶硅膜的预膜; 以及能量束照射装置，其设置用于真空室，用于用用于使前膜结晶的能量束照射预膜。该成膜装置以高生产率制造具有良好品质的晶体硅膜作为TFT等的半导体膜。

72. 发明授权

US6136386A Method of coating polymer or glass objects with carbon films 失效
标题翻译：用碳膜涂覆聚合物或玻璃物体的方法
公开(公告)号：US6136386A
公开(公告)日：2000-10-24
申请号：US884554
申请日：1997-06-27
申请人： Takahiro Nakahigashi , Akira Doi , Yoshihiro Izumi , Hajime Kuwahara
发明人： Takahiro Nakahigashi , Akira Doi , Yoshihiro Izumi , Hajime Kuwahara
IPC分类号： C23C16/02 , C23C16/26 , C23C16/507 , C23C16/515 , H05H1/00
CPC分类号： C23C16/507 , C23C16/0245 , C23C16/0272 , C23C16/26 , C23C16/515 , Y10S427/104
摘要： An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is made of at least one kind of material selected from a group including polymer material such as resin or rubber as well as glass, and the contact portion has a surface entirely or partially coated with a carbon film (typically, a DLC film) having a wear resistance as well as at least one of a lubricity, a water repellency and a gas barrier property. The carbon film is formed on the object with a good adhesion.
摘要翻译：诸如汽车部件，图像形成装置部件，自行车部件，其他机器部件，运动用品或其部件，玩具或其部件或雨制品或其部件的物体具有与联系对象。接触部分由选自树脂或橡胶等聚合物材料以及玻璃的组中的至少一种材料制成，接触部分具有完全或部分涂覆有碳膜（通常为DLC膜）的表面）具有耐磨性以及润滑性，拒水性和阻气性中的至少一种。在具有良好粘合性的物体上形成碳膜。

73. 发明授权

US06116187A Thin film forming apparatus 失效
标题翻译：薄膜成型装置
公开(公告)号：US06116187A
公开(公告)日：2000-09-12
申请号：US315145
申请日：1999-05-20
申请人： Hiroshi Murakami , Takashi Mikami , Kiyoshi Ogata
发明人： Hiroshi Murakami , Takashi Mikami , Kiyoshi Ogata
IPC分类号： C30B25/02 , C23C16/50 , C23C16/517 , H01J37/32 , H01L21/205 , H01L21/336 , H01L29/786 , C23C16/00
CPC分类号： H01J37/3233 , C23C16/517
摘要： A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.
摘要翻译：薄膜形成装置具有作为成膜室的真空室，等离子体产生单元和离子源。在真空室中，放置基板，在基板上形成薄膜。等离子体产生单元分解引入真空室的源气体，以在真空室内的基板的成膜表面附近产生源气体的等离子体。离子源设置在真空室周围。离子源产生离子束，其被引出以基本上平行于衬底的成膜表面引导以照射等离子体。

74. 发明授权

US5801488A Variable energy radio-frequency type charged particle accelerator 失效
标题翻译：可变能量射频型带电粒子加速器
公开(公告)号：US5801488A
公开(公告)日：1998-09-01
申请号：US608738
申请日：1996-02-29
申请人： Hiroshi Fujisawa
发明人： Hiroshi Fujisawa
IPC分类号： H05H7/02 , H05H9/00
CPC分类号： H05H7/02 , H05H9/00
摘要： A radio-frequency type charged particle accelerator includes a first Radio Frequency Quadrupole (RFQ) accelerator, a second RFQ accelerator and a rear stage Rf accelerator. The first RFQ accelerator has quadrupole electrodes positioned along a traveling path of a charged particle beam and bunches and accelerates the charged particle beam by receiving a radio-frequency power from a radio-frequency power source and resonating. The rear stage RF accelerator is disposed in a rear stage of the first RFQ accelerator and changes the energy of the charged particle beam by receiving the radio-frequency power from the radio-frequency power source and resonating. The second RFQ accelerator is disposed between the first RFQ accelerator, has quadrupole electrodes positioned along the traveling path of the charged particle beam and normally accelerates the charged particle beam by receiving a radio-frequency power from the radio-frequency power source and resonating. The accelerator is switched between an accelerating mode and a passing-through mode.
摘要翻译：射频型带电粒子加速器包括第一射频四极杆（RFQ）加速器，第二RFQ加速器和后级Rf加速器。第一RFQ加速器具有沿着带电粒子束的行进路径定位的四极电极，并且通过从射频电源接收射频功率并谐振来加速带电粒子束。后级RF加速器设置在第一RFQ加速器的后级中，通过从射频电源接收射频功率并谐振来改变带电粒子束的能量。第二RFQ加速器设置在第一RFQ加速器之间，具有沿着带电粒子束的行进路径定位的四极电极，并且通过从射频电源接收射频功率并进行谐振来正常加速带电粒子束。加速器在加速模式和通过模式之间切换。

75. 发明授权

US5777438A Apparatus for implanting metal ions in metals and ceramics 失效
标题翻译：用于在金属和陶瓷中注入金属离子的装置
公开(公告)号：US5777438A
公开(公告)日：1998-07-07
申请号：US600524
申请日：1996-02-13
申请人： Yasuo Suzuki
发明人： Yasuo Suzuki
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H05B37/02
CPC分类号： H01J37/32412
摘要： A metal ion implanting apparatus according to the present invention includes a vacuum vessel also serving as an anode, a holder for holding a substrate to be processed, a plurality of arc evaporation sources, a plurality of arc power supplies and a bias power supply. Each of the plurality of arc evaporation sources has a cathode including at least one of metal and a metal compound. The cathode evaporates cathode substance by arc discharge between the cathodes and the vacuum vessel also serving as the anode. Each of the plurality of arc power supplies supply an arc discharge voltage between the cathode of the arc evaporation source corresponding to the arc power supply and the vacuum vessel with the cathode as a negative side. The bias power supply for applying a negative pulse-like bias voltage on a base of a potential of the vacuum vessel to the holder and the substrate held by the holder.
摘要翻译：根据本发明的金属离子注入装置包括也用作阳极的真空容器，用于保持待处理衬底的保持器，多个电弧蒸发源，多个电弧电源和偏置电源。多个电弧蒸发源中的每一个具有包括金属和金属化合物中的至少一种的阴极。阴极通过阴极和也用作阳极的真空容器之间的电弧放电来蒸发阴极物质。多个电弧电源中的每一个在与电弧电源相对应的电弧蒸发源的阴极和阴极之间的真空容器之间提供电弧放电电压作为负极。用于将负脉冲状偏置电压施加到真空容器的电位到保持器和由保持器保持的基板的偏置电源。

76. 发明授权

US5685363A Substrate holding device and manufacturing method therefor 失效
标题翻译：基板保持装置及其制造方法
公开(公告)号：US5685363A
公开(公告)日：1997-11-11
申请号：US568767
申请日：1995-12-07
申请人： Koichi Orihira , Yasunori Ando , Hiroshi Inami
发明人： Koichi Orihira , Yasunori Ando , Hiroshi Inami
IPC分类号： G02F1/13 , C23C14/50 , G02F1/1333 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/683 , F28F23/00
CPC分类号： H01L21/67103 , Y10T29/4935
摘要： A substrate holding device of the invention includes a base cooled with a heat absorbing fluid, a flexible sheet being extended on a surface of the base for forming a sealed portion between the sheet and the base, a heat absorbing fluid with which the sealed portion is filled, a sheet-like rubber elastic material being disposed on the sheet, and a substrate retainer for pressing fringes of a substrate, placed on the rubber elastic material, against the base. Metal elastic members may be distributed almost uniformly in the sealed portion, in place of or together with, the rubber elastic material.
摘要翻译：本发明的基板保持装置包括用吸热流体冷却的基底，柔性片在基底的表面上延伸，以形成片与基部之间的密封部分，密封部分为填充在片材上的片状橡胶弹性材料和用于将放置在橡胶弹性材料上的基底的条纹压靠在基底上的基片保持器。金属弹性构件可以几乎均匀地分布在密封部分中，代替橡胶弹性材料或与橡胶弹性材料一起。

77. 发明授权

US5674368A Film forming apparatus 失效
标题翻译：成膜装置
公开(公告)号：US5674368A
公开(公告)日：1997-10-07
申请号：US250500
申请日：1994-05-27
申请人： Hajime Hashimoto , Kazuo Kubota , Daisuke Inoue , Syuichi Nogawa
发明人： Hajime Hashimoto , Kazuo Kubota , Daisuke Inoue , Syuichi Nogawa
IPC分类号： C23C14/50 , C23C14/56 , C23C14/00 , B65G49/05
CPC分类号： C23C14/50 , C23C14/566 , C23C14/568
摘要： A film forming apparatus includes a film forming chamber in which a film is formed on a substrate at a film forming position, a plurality of load lock chambers provided on the film forming chamber through gate valves respectively, a plurality of pivots provided in the film forming chamber correspondingly to the respective load lock chambers, and carrying arms supported by the pivots respectively so as to move the substrate from any one of the load lock chambers to the film forming position and contrariwise from the film forming position to any one of the load lock chambers.
摘要翻译：一种成膜装置包括：成膜室，其中在成膜位置的基板上形成膜，多个负载锁定室分别通过闸阀设置在成膜室上，多个枢轴设置在成膜分别对应于各个负载锁定室，以及分别由枢轴支撑的支撑臂，以便使基板从任何一个装载锁定室移动到胶片形成位置，并从胶片形成位置相反地移动到任何一个装载锁房间。

78. 发明授权

US5482607A Film forming apparatus 失效
标题翻译：成膜装置
公开(公告)号：US5482607A
公开(公告)日：1996-01-09
申请号：US123225
申请日：1993-09-20
申请人： Hajime Hashimoto , Kazuo Kubota , Daisuke Inoue , Syuichi Nogawa
发明人： Hajime Hashimoto , Kazuo Kubota , Daisuke Inoue , Syuichi Nogawa
IPC分类号： C23C14/50 , C23C14/56 , C23C14/34
CPC分类号： C23C14/50 , C23C14/566 , C23C14/568
摘要： A film forming apparatus includes a film forming chamber in which a film is formed on a substrate at a film forming position, a plurality of load lock chambers provided on the film forming chamber through gate valves respectively, a plurality of pivots provided in the film forming chamber correspondingly to the respective load lock chambers, and carrying arms supported by the pivots respectively so as to move the substrate from any one of the load lock chambers to the film forming position and contrariwise from the film forming position to any one of the load lock chambers.
摘要翻译：一种成膜装置包括：成膜室，其中在成膜位置的基板上形成膜，分别通过闸阀设置在成膜室上的多个负载锁定室，设置在膜形成中的多个枢轴分别对应于各个负载锁定室，以及分别由枢轴支撑的支撑臂，以便使基板从任何一个装载锁定室移动到胶片形成位置，并从胶片形成位置相反地移动到任何一个装载锁房间。

79. 发明授权

US5189303A Ion source having a mass separation device 失效
标题翻译：具有质量分离装置的离子源
公开(公告)号：US5189303A
公开(公告)日：1993-02-23
申请号：US838926
申请日：1992-02-21
申请人： Masayasu Tanjyo , Hiroshi Nakazato
发明人： Masayasu Tanjyo , Hiroshi Nakazato
IPC分类号： H01J27/02 , H01J37/08
CPC分类号： H01J49/288 , H01J27/024 , H01J37/08
摘要： An ion source for producing wide, large area type ion beams with a mass-separation device. Four, five six or so electrode plates with ion holes at the same positions are installed at the outlet of the ion source. Second or third one of the electrodes has Wien filters at the ion holes. The Wien filter has permanent magnets and electrodes for producing a magnetic field and an electric field perpendicular to the axial direction of the ion holes. Ion beams which have not been accelerated so fast are separated by mass by the Wien filter. Low kinetic energy of ions alleviates the strength of the magnetic field and the electric field. Wide, large area type ion beams without impurities are obtained.

80. 发明授权

US5107170A Ion source having auxillary ion chamber 失效
标题翻译：离子源具有辅助离子室
公开(公告)号：US5107170A
公开(公告)日：1992-04-21
申请号：US422724
申请日：1989-10-17
申请人： Junzo Ishikawa , Yoshio Matsubara , Hideaki Takara , Shuichi Nogawa , Toshiaki Sasai
发明人： Junzo Ishikawa , Yoshio Matsubara , Hideaki Takara , Shuichi Nogawa , Toshiaki Sasai
IPC分类号： H01J27/18 , H01J37/08 , H05H1/46
CPC分类号： H01J27/18 , H01J37/08 , H05H1/46 , H01J2237/0825
摘要： An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.
摘要翻译：具有辅助等离子体室和主等离子体室的离子源。辅助等离子体室接收可电离气体并且具有足够功率的微波以产生高频放电并产生用于维持在主室中产生离子等离子体的子质量。可以使用多个辅助等离子体室，并且每个可以单独调节。可以提供保护板，筛网和涂层以保护主室的离子等离子体不会溅射辅助等离子体室的面对壁。

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