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    • 9. 发明申请
    • Ion implanting method and apparatus
    • 离子注入方法和装置
    • US20040232350A1
    • 2004-11-25
    • US10800892
    • 2004-03-15
    • Nissin Electric Co., Ltd.
    • Koji IwasawaNobuo Nagai
    • G21K005/10
    • H01J37/3171H01J2237/20228
    • The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.
    • 离子注入方法使用在X方向上往复扫描离子束并且在与其正交的Y方向上往复机械驱动衬底。 通过在基板的中心处改变基板的驱动速度,多次对具有不同剂量的基板的两个注入区分别注入离子的注入步骤。 在各个植入步骤之间的每个间隔期间以及离子束未被施加到基板上的过程中,一次旋转基板围绕其中心旋转指定角度的旋转步骤。