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    • 67. 发明授权
    • N-dopant for carbon nanotubes and graphene
    • 碳纳米管和石墨烯的N掺杂剂
    • US08642432B2
    • 2014-02-04
    • US13308974
    • 2011-12-01
    • Ali Afzali-ArdakaniBhupesh ChandraGeorge Stojan Tulevski
    • Ali Afzali-ArdakaniBhupesh ChandraGeorge Stojan Tulevski
    • H01L21/336
    • H01L51/0558B82Y10/00B82Y40/00H01L51/0018H01L51/002H01L51/0048H01L51/0072H01L51/055Y10S977/846Y10S977/938
    • A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.
    • 用于形成具有稳定的n掺杂纳米组分的场效应晶体管的组合物和方法。 该方法包括在栅极上形成栅极电介质,在栅极电介质上形成包含纳米成分的沟道,在纳米元件的第一区域上形成源极,在纳米元件的第二区域上形成漏极, 形成场效应晶体管,并且将场效应晶体管的纳米组分的一部分暴露于二氢四氮杂萘以产生稳定的n掺杂纳米组分,其中二氢四氮杂芳烃由下式表示:其中在二氢四氮杂碳酸化学结构中, R1,R2,R3和R4可以是氢,C1〜C16碳的烷基,烷氧基,烷硫基,三烷基硅烷基,羟甲基,羧酸基或羧酸酯基。