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61. 发明申请

US20160240730A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置及制造发光装置的方法
公开(公告)号：US20160240730A1
公开(公告)日：2016-08-18
申请号：US15140788
申请日：2016-04-28
申请人： MURATA MANUFACTURING CO., LTD.
发明人： KOJI MURAYAMA , HARUYA MIYATA
IPC分类号： H01L33/06 , H01L33/14
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/14 , H01L51/502 , H01L2933/0033
摘要： A light-emitting device that includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode on a transparent substrate. The light-emitting layer has a plurality of quantum dots dispersed therein, and a hole-transporting material is dispersed in gaps between the quantum dots. To for manufacturing the light-emitting device, a quantum dot dispersing solution having the quantum dots dispersed therein, and a hole-transporting solution containing a soluble hole-transporting material that is soluble in the quantum dot dispersing solution and has a hole transport property are prepared. The hole-transporting solution is applied onto the hole injection layer to form a hole-transporting coating film, and the quantum dot dispersing solution is then applied onto the hole-transporting coating film to dissolve the soluble hole-transporting material in the quantum dot dispersing solution.
摘要翻译：在透明基板上具有阳极，空穴注入层，空穴传输层，发光层，电子输送层，阴极的发光元件。发光层具有分散在其中的多个量子点，并且空穴传输材料分散在量子点之间的间隙中。为了制造发光器件，其中分散有量子点的量子点分散溶液和含有可溶于量子点分散溶液并具有空穴传输性质的可溶性空穴传输材料的空穴传输溶液是准备将空穴传输溶液施加到空穴注入层上以形成空穴传输涂膜，然后将量子点分散溶液涂覆到空穴传输涂膜上，以溶解量子点分散中的可溶性空穴传输材料解。

62. 发明授权

US09412903B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09412903B2
公开(公告)日：2016-08-09
申请号：US14601190
申请日：2015-01-20
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ju Heon Yoon , Joon Woo Jeon , Dong Hyuk Joo , Jin Young Choi
IPC分类号： H01L33/12 , H01L33/14 , H01L33/38
CPC分类号： H01L33/14 , H01L33/382 , H01L2224/16225 , H01L2924/10155
摘要： A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.
摘要翻译：半导体发光器件包括堆叠半导体结构，其包括具有分为第一区域和第二区域的顶表面的第一导电类型半导体层以及顺序地设置在第二区域上的有源层和第二导电类型半导体层的第一导电型半导体层。第一和第二接触电极分别设置在第一导电型半导体层和第二导电类型半导体层的第一区域中。电流扩散层设置在第二接触电极上，并且包括具有第一电阻率的第一导电层和具有小于第一电阻率的第二电阻率的第二导电层。

63. 发明申请

US20160225950A1 NEAR UV LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：US20160225950A1
公开(公告)日：2016-08-04
申请号：US15096252
申请日：2016-04-11
申请人： Seoul Viosys Co., Ltd.
发明人： Chang Suk HAN , Hwa Mok KIM , Hyo Shik CHOI , Mi So KO , A Ram Cha LEE
IPC分类号： H01L33/14 , H01L33/32 , H01L33/06
CPC分类号： H01L33/14 , H01L33/04 , H01L33/06 , H01L33/32
摘要： Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

64. 发明申请

US20160225941A1 Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer 审中-公开
标题翻译：发光部分弛豫半导体层的异质结构
公开(公告)号：US20160225941A1
公开(公告)日：2016-08-04
申请号：US15096802
申请日：2016-04-12
申请人： Sensor Electronic Technology, Inc.
发明人： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC分类号： H01L33/00 , H01L33/30 , H01L33/12
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/02 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2933/0033 , H01S5/021 , H01S5/0213 , H01S5/32341 , H01S2301/173
摘要： A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
摘要翻译：提供了包括部分松弛的半导体层的发光异质结构。可以包括部分松弛的半导体层作为发光异质结构的接触半导体层的子层。也可以在部分松弛的半导体层附近包含位错阻挡结构。

65. 发明授权

US09356212B2 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US09356212B2
公开(公告)日：2016-05-31
申请号：US14459887
申请日：2014-08-14
申请人： SEOUL VIOSYS CO., LTD.
发明人： Se Hee Oh , Mae Yi Kim , Seom Geun Lee , Myoung Hak Yang , Yeo Jin Yoon
IPC分类号： H01L33/62 , H01L33/38 , H01L33/14 , H01L27/15
CPC分类号： H01L33/62 , H01L27/15 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/385 , H01L33/387 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a transparent electrode layer disposed on the second semiconductor layer, wherein the first and second semiconductor layers have different conductivity types. The interconnections include a common cathode commonly connecting first and second light emitting cells of the light emitting cells, the first and second light emitting cells share the first semiconductor layer, the transparent electrode layer is continuously disposed between the first and second light emitting cells, and the common cathode is electrically connected to the first and second light emitting cells through the transparent electrode layer.
摘要翻译：发光二极管包括设置在基板上的发光单元和将发光单元彼此连接的互连。每个发光单元包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的有源层，以及设置在第二半导体层上的透明电极层，其中第一和第二半导体层具有不同的导电类型。互连包括通常连接发光单元的第一和第二发光单元的公共阴极，第一和第二发光单元共享第一半导体层，透明电极层连续地设置在第一和第二发光单元之间，以及公共阴极通过透明电极层电连接到第一和第二发光单元。

66. 发明授权

US09331252B2 Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods 有权
标题翻译：波长转换器，包括用于固态照明器件的偏振增强型载波捕获转换器，以及相关系统和方法
公开(公告)号：US09331252B2
公开(公告)日：2016-05-03
申请号：US13216062
申请日：2011-08-23
申请人： Martin F. Schubert , Vladimir Odnoblyudov
发明人： Martin F. Schubert , Vladimir Odnoblyudov
IPC分类号： H01L33/08 , H01L33/50
CPC分类号： H01L33/502 , H01L33/007 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/18 , H01L33/32 , H01L2933/0041
摘要： Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization. Accordingly, the first region has a first material polarization value and the second region has a second material polarization value different than the first material polarization value, with the differences between the first and second material polarization values forming an electric field at an interface between the first and second regions.
摘要翻译：公开了用于固态照明装置的波长转换器，包括偏振增强载波捕获转换器，以及相关的系统和方法。根据特定实施例的固态辐射半导体结构包括具有材料特性的第一值的第一区域，并且被定位成接收第一波长的辐射。该结构还可以包括邻近第一区域定位的第二区域，以发射不同于第一波长的第二波长的辐射。第二区域具有不同于第一值的材料特性的第二值，特征的第一和第二值形成电位梯度，以驱动来自第一个辐射结构的辐射结构中的电子，空穴或电子和空穴区域到第二区域。在另一特定实施例中，材料特性包括材料极化。因此，第一区域具有第一材料极化值，第二区域具有与第一材料极化值不同的第二材料极化值，第一和第二材料极化值之间的差在第一和第二材料极化值之间的界面处形成电场和第二个地区。

67. 发明授权

US09331239B1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09331239B1
公开(公告)日：2016-05-03
申请号：US14793389
申请日：2015-07-07
申请人： EPISTAR CORPORATION
发明人： Yi-Chieh Lin , Cheng-Long Yeh , Rong-Ren Lee , Shih-Chang Lee
IPC分类号： H01L29/06 , H01L27/15 , H01L31/0328 , H01L21/00 , H01L33/06 , H01L33/14 , H01L33/00 , H01L33/30
CPC分类号： H01L33/06 , H01L33/025 , H01L33/14 , H01L33/30
摘要： A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first cladding layer of n type, a second cladding layer of p type, and an active layer between the first cladding layer and the second cladding layer wherein the active layer comprises a well layer interposed between adjacent barrier layers. The light-emitting device further comprises a means for reducing a flicker noise of the light-emitting device.
摘要翻译：提供了一种发光装置。发光装置包括发光层，其包括n型的第一包层，p型的第二包层和在第一包层和第二包层之间的有源层，其中有源层包括阱层介于相邻阻挡层之间。发光装置还包括用于降低发光装置的闪烁噪声的装置。

68. 发明授权

US09318676B2 Light emitting device and methods for forming the same 有权
标题翻译：发光装置及其形成方法
公开(公告)号：US09318676B2
公开(公告)日：2016-04-19
申请号：US14188499
申请日：2014-02-24
申请人： HUGA OPTOTECH INC.
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00 , H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.
摘要翻译：本发明提供一种发光器件，其包括外延层叠结构，直接形成在外延层叠结构上的II / V族化合物接触层，直接形成在II / V族化合物接触层上的突起或凹陷型结构，以及覆盖突起或凹陷型结构的导电层。

69. 发明申请

US20160104784A1 Ohmic Contact to Semiconductor 审中-公开
公开(公告)号：US20160104784A1
公开(公告)日：2016-04-14
申请号：US14973563
申请日：2015-12-17
申请人： Sensor Electronic Technology, Inc.
发明人： Remigijus Gaska , Michael Shur , Jinwei Yang , Alexander Dobrinsky , Maxim S. Shatalov
IPC分类号： H01L29/45 , H01L29/15 , H01L29/20 , H01L33/40 , H01L29/737 , H01L33/06 , H01L33/14 , H01L33/32 , H01L21/285 , H01L29/205
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/155 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/401 , H01L29/66431 , H01L29/66462 , H01L29/737 , H01L29/778 , H01L29/7786 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/40 , H01L33/405 , H01L2933/0016
摘要： A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.

70. 发明授权

US09312447B2 Near UV light emitting device 有权
标题翻译：近UV发光装置
公开(公告)号：US09312447B2
公开(公告)日：2016-04-12
申请号：US14526110
申请日：2014-10-28
申请人： SEOUL VIOSYS CO., LTD.
发明人： Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Mi So Ko , A Ram Cha Lee
IPC分类号： H01L33/06 , H01L33/32 , H01L33/04 , H01L33/14
CPC分类号： H01L33/32 , H01L33/04 , H01L33/06 , H01L33/14
摘要： Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.
摘要翻译：公开了一种近紫外发光装置。发光器件包括n型接触层，p型接触层，设置在n型接触层和p型接触层之间的多量子阱结构的有源区，以及至少一个电子控制层设置在n型接触层和有源区之间。 n型接触层和p型接触层中的每一个包括AlInGaN或AlGaN层，并且电子控制层由AlInGaN或AlGaN形成。此外，电子控制层包含比相邻层更大量的Al，以阻止电子流入有源区域。因此，电子迁移率恶化，从而提高有源区域中的电子和空穴的复合率。

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