基本信息:
- 专利标题： Ohmic Contact to Semiconductor
- 申请号：US14973563 申请日：2015-12-17
- 公开(公告)号：US20160104784A1 公开(公告)日：2016-04-14
- 发明人： Remigijus Gaska , Michael Shur , Jinwei Yang , Alexander Dobrinsky , Maxim S. Shatalov
- 申请人： Sensor Electronic Technology, Inc.
- 申请人地址： US SC Columbia
- 专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人地址： US SC Columbia
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/15 ; H01L29/20 ; H01L33/40 ; H01L29/737 ; H01L33/06 ; H01L33/14 ; H01L33/32 ; H01L21/285 ; H01L29/205
摘要：
A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.
公开/授权文献:
- US09543400B2 Ohmic contact to semiconductor 公开/授权日：2017-01-10
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/41 | ..以其形状、相对尺寸或位置为特征的 |
| ------------H01L29/45 | ...欧姆电极 |